TY - CHAP A1 - Buchner, Philipp A1 - Kaiser, Alexander A1 - Hausladen, Matthias A1 - Bartl, Mathias A1 - Bachmann, Michael A1 - Schreiner, Rupert T1 - Silicon Nanowire Field Emitters with Integrated Extraction Gates Using Benzocyclobutene as an Insulator T2 - 37th International Vacuum Nanoelectronics Conference (IVNC), 15-19 July 2024, Brno, Czech Republic N2 - We are continuously improving the performance of our field emission electron sources. In this work a geometrically optimized design of electron sources with silicon nanowire field emitters on pillars was fabricated. This new design increased the packing density of the emitters by using a hexagonal arrangement of the pillars and a pillar spacing of 40 µm. Benzocyclobutene was used as the insulator material for an integrated (Cr/Ni) extraction gate. A modified fabrication process for the field emitters further improved reproducibility and reliability. An emission current of about 0.4 mA was measured for 30 minutes at an extraction voltage of 250 V and an anode voltage of 500 V. Electron transmission through the gate reached almost 100%. Y1 - 2024 U6 - https://doi.org/10.1109/IVNC63480.2024.10652314 SP - 1 EP - 2 PB - IEEE ER -