TY - JOUR A1 - Lu, Wei A1 - Nicoul, Matthieu A1 - Shymanovich, Uladzimir A1 - Tarsevitch, Alexander A1 - Kammler, Martin A1 - Horn-von Hoegen, Michael A1 - von der Linde, Dietrich A1 - Sokolowski-Tinten, Klaus T1 - Extreme Phonon Softening in Laser-excited Bismuth - Towards an Inverse Peierls-transition JF - MRS Online Proceedings Library N2 - Large amplitude coherent optical phonons have been investigated in laser-excited Bismuth by means of femtosecond time-resolved X-ray diffraction. For absorbed laser fluences above 2 mJ/cm2, the experimental data reveal an extreme softening of the excited A1g-mode down to frequencies of about 1 THz, only 1/3 of the unperturbed A1g-frequency. At even stronger excitation the measured diffraction signals no longer exhibit an oscillatory behavior presenting strong indication that upon intense laser-excitation the Peierls-distortion, which defines the equilibrium structure of Bismuth, can be transiently reversed. Y1 - 2009 U6 - https://doi.org/10.1557/PROC-1230-MM03-05 VL - 1230 PB - Springer ER - TY - JOUR A1 - Hanisch-Blicharski, Anja A1 - Krenzer, Boris A1 - Möllenbeck, Simone A1 - Ligges, Manuel A1 - Zhou, Ping A1 - Kammler, Martin A1 - Horn-von Hoegen, Michael T1 - Transient Cooling of Ultrathin Epitaxial Bi(111)-Films on Si(111) Upon Femtosecond Laser Excitation Studied by Ultrafast Reflection High Energy Electron Diffraction JF - MRS Online Proceedings Library N2 - With time resolved ultrafast electron diffraction the cooling process across the interface between a thin film and the underlying substrate was studied after excitation with short laser pulses. From the exponential decay of the surface temperature evolution a thermal boundary conductance of 1430 W/(cm2K) is determined for a 9.7 nm thin Bi(111) film on Si(111). A linear dependence between laser fluence and initial temperature rise was measured for film-thicknesses between 2.5 nm and 34.5 nm. The ratio of initial temperature rise and laser fluence for different film-thicknesses is compared to a model taking multilayer optics into account. The data agree well with this model. Y1 - 2009 U6 - https://doi.org/10.1557/PROC-1172-T04-08 SP - 1 EP - 6 PB - Springer ER - TY - JOUR A1 - Al-Falou, A. A. A1 - Kammler, Martin A1 - Horn-von Hoegen, Michael T1 - Strain state analysis of hetero-epitaxial systems JF - Europhysics Letters N2 - We present a new method to analyze the strain state of epitaxial hetero structures by high-resolution spot profile analysis low-energy electron diffraction. From the variation of the spot profiles with the vertical scattering vector we determine the hetero film roughness, the change of interlayer spacing due to tetragonal distortion, and the variation of the interlayer distance due to partial relaxation of the strained rough film. The practical implementation of this method is simple and can be used to determine the onset of strain-relieving defects during the growth process. Y1 - 2005 U6 - https://doi.org/10.1209/epl/i2004-10399-6 VL - 69 IS - 4 SP - 570 EP - 576 PB - IOP ER - TY - JOUR A1 - Kammler, Martin A1 - Horn-von Hoegen, Michael T1 - Low energy electron diffraction of epitaxial growth of bismuth on Si(111) JF - Surface Science N2 - The epitaxial growth of Bi on Si(1 1 1) studied by spot profile analyzing low energy electron diffraction shows for low coverage rotationally disordered Bi cluster with preferred orientations following the threefold symmetry of the Si substrate. With further deposition the Bi cluster coalesces and the surface orientation changes from the pseudo cubic Bi(1 1 0) surface orientation of the Bi cluster into the hexagonal Bi(1 1 1) surface of the resulting Bi film. KW - Bismuth KW - Epitaxial growth KW - LEED KW - low energy electron diffraction KW - Silicon KW - Structural transition Y1 - 2005 U6 - https://doi.org/10.1016/j.susc.2004.11.033 VL - 576 IS - 1-3 SP - 56 EP - 60 PB - Elsevier ER - TY - CHAP A1 - Siders, C. W. A1 - Cavalleri, Andrea A1 - Tóth, Csaba A1 - Wilson, K. R. A1 - Squier, Jeff A. A1 - Barty, C. P. J. A1 - Kammler, Martin A1 - Sokolowski-Tinten, Klaus A1 - Horn-von Hoegen, Michael A1 - von der Linde, D. T1 - Femtosecond X-ray diffraction of short-pulse irradiated semiconductors T2 - Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges, 24-24 May 2002, Long Beach, CA, USA N2 - Summary form only given, as follow. Ultrafast optical-pump, X-ray diffraction probe experiments are providing new ways to study transient processes including the direct observation of the atomic motion by which many solid-state processes and chemical and biochemical reactions take place. Current table-top-terawatt femtosecond laser systems provide an attractive source of few-hundred femtosecond duration bursts of angstrom-scale X-ray radiation with fluxes comparable to standard rotating anode sources. Their compact size enables time resolved structural dynamics to be studied in the small laboratory with temporal resolution better than typical molecular vibrational periods. Ultrafast structural dynamics in crystalline samples are readily studied with such systems and experiments to be discussed in this talk include ultrafast non-thermal solid-to-liquid transition in thin single-crystal Ge-111 films grown on Si-111 substrates; ultrafast non-thermal solid-to-solid transitions in bulk vanadium dioxide from a low temperature insulating phase to a high temperature metallic phase; and harmonic and anharmonic coherent acoustic dynamics in layered Ge-111/Si-111 and bulk GaAs-111 samples. Future improvements in high-average power short-pulse lasers will enable the study of a wider class of materials such as amorphous solids or liquid-phase dynamics of simple molecules, while proposed 4th generation light sources based upon single-pass X-ray free-electron lasers will permit singleshot structural determination of complex biomolecules. KW - high-speed techniques KW - X-ray diffraction KW - laser beam effects KW - semiconductor materials KW - solid-liquid transformations KW - solid-state phase transformations KW - metal-insulator transition Y1 - 2002 U6 - https://doi.org/10.1109/CLEO.2002.1033997 SP - 297 EP - 298 PB - IEEE ER - TY - JOUR A1 - Sokolowski-Tinten, Klaus A1 - Blome, Christian A1 - Blums, Juris A1 - Cavalleri, Andrea A1 - Dietrich, Clemens A1 - Tarasevitch, Alexander A1 - Uschmann, Ingo A1 - Förster, Eckhard A1 - Kammler, Martin A1 - Horn-von Hoegen, Michael A1 - von der Linde, Dietrich T1 - Femtosecond X-ray measurement of coherent lattice vibrations near the Lindemann stability limit JF - Nature N2 - The study of phase-transition dynamics in solids beyond a time-averaged kinetic description requires direct measurement of the changes in the atomic configuration along the physical pathways leading to the new phase. The timescale of interest is in the range 10(-14) to 10(-12) s. Until recently, only optical techniques were capable of providing adequate time resolution, albeit with indirect sensitivity to structural arrangement. Ultrafast laser-induced changes of long-range order have recently been directly established for some materials using time-resolved X-ray diffraction. However, the measurement of the atomic displacements within the unit cell, as well as their relationship with the stability limit of a structural phase, has to date remained obscure. Here we report time-resolved X-ray diffraction measurements of the coherent atomic displacement of the lattice atoms in photoexcited bismuth close to a phase transition. Excitation of large-amplitude coherent optical phonons gives rise to a periodic modulation of the X-ray diffraction efficiency. Stronger excitation corresponding to atomic displacements exceeding 10 per cent of the nearest-neighbour distance-near the Lindemann limit-leads to a subsequent loss of long-range order, which is most probably due to melting of the material. Y1 - 2003 U6 - https://doi.org/10.1038/nature01490 VL - 422 IS - 6929 SP - 287 EP - 289 PB - Springer ER - TY - JOUR A1 - Hild, R. A1 - Seifert, C. A1 - Kammler, Martin A1 - Meyer zu Heringdorf, Frank-Joachim A1 - Horn-von Hoegen, Michael A1 - Zhachuk, R.A A1 - Olshanetsky, B.Z T1 - Kinetics of Au induced faceting of vicinal Si(111) JF - Surface Science N2 - Au induced faceting of vicinal Si(1 1 1) has been studied during adsorption at elevated temperature by spot profile analyzing of low energy electron diffraction and after quenching to room temperature by scanning tunneling microscopy. On the surfaces inclined towards five different types of facets form with increasing Au coverage at adsorption temperatures Tads below 800 °C. They are (4 4 3), (7 7 5), (5 5 3), a stepped (2 2 1), and the (3 3 1) facets. Atomic models for the (5 5 3) and (7 7 5) facet planes are proposed on the basis of high resolution STM images. At C we found the formation of an ordered step train which covers the entire surface. With further increasing Au coverage the stepped surface decomposes again into (1 1 1) terraces and step bunches. Driving force is the formation of the Si(1 1 1)-(5×2)–Au reconstruction. KW - Low energy electron diffraction (LEED) KW - Scanning tunneling microscopy KW - Silicon KW - Gold KW - Faceting KW - Adsorption kinetics KW - Step formation and bunching Y1 - 2002 U6 - https://doi.org/10.1016/S0039-6028(02)01666-7 VL - 512 IS - 1-2 SP - 117 EP - 127 PB - Elsevier ER - TY - JOUR A1 - Sokolowski-Tinten, Klaus A1 - Horn-von Hoegen, Michael A1 - von der Linde, D. A1 - Cavalleri, Andrea A1 - Siders, C. W. A1 - Brown, F. L. H. A1 - Leitner, D. M. A1 - Tóth, Csaba A1 - Squier, Jeff A. A1 - Barty, C. P. J. A1 - Wilson, K. R. A1 - Kammler, Martin T1 - Transient lattice dynamics in fs-laser-excited semiconductors probed by ultrafast X-ray diffraction JF - Journal de Physique IV N2 - A study of lattice dynamics in fs-laser-excited crystalline bulk Ge and Ge/Si-heterostructures, using time-resolved x-ray diffraction, was presented. Fast energy transport deep into the bulk of the material, coherent acoustic phonon dynamics, lattice anharmonicity, and vibrational transport across a buried interfaces were observed. Graphs showing time-dependent shifts of the centroid of the measured rocking curves in the Ge-overlayer and in the Si-substrate for different fluences, were presented. Y1 - 2001 U6 - https://doi.org/10.1051/jp4:2001290 VL - 11 IS - Pr2 SP - 473 EP - 477 PB - EDP ER - TY - JOUR A1 - Sokolowski-Tinten, Klaus A1 - Cavalleri, Andrea A1 - Siders, C. W. A1 - Brown, F. L. H. A1 - Leitner, D. M. A1 - Tóth, Csaba A1 - Kammler, Martin A1 - Horn-von Hoegen, Michael A1 - von der Linde, D. A1 - Squier, Jeff A. A1 - Barty, C. P. J. A1 - Wilson, K. R. T1 - Time-resolved x-ray diffraction study of ultrafast acoustic phonon dynamics in Ge/Si-heterostructures JF - Chemical Physics N2 - Using time-resolved x-ray diffraction the ultafast strain dynamics in fs-laserexcited Ge/Si-heterostructures has been studied. A fluence dependent, anharmonic damping of the impulsively generated acoustic phonons and vibrational transport across the buried Ge/Si-interface are observed. Y1 - 2001 U6 - https://doi.org/10.1007/978-3-642-56546-5_81 VL - 66 SP - 281 EP - 283 PB - Springer ER - TY - CHAP A1 - Sokolowski-Tinten, Klaus A1 - Blome, Christian A1 - Dietrich, Clemens A1 - Blums, Juris A1 - Horn-von Hoegen, Michael A1 - von der Linde, D. A1 - Cavalleri, Andrea A1 - Squier, Jeff A. A1 - Kammler, Martin T1 - Structural dynamics in laser-excited solids investigated with femtosecond x-ray diffraction T2 - 2002 Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, 19-24 May 2002, Long Beach, CA, USA N2 - Summary form only given. Ultrashort x-ray pulses offer a unique combination of atomic-scale spatial and temporal resolution, which permits direct measurements of structural transients on an ultrafast time scale. Using time-resolved X-ray diffraction with femtosecond, multi-keV X-ray pulses we have studied transient lattice dynamics in optically excited semiconductors. Y1 - 2002 U6 - https://doi.org/10.1109/QELS.2002.1031182 SP - 115 EP - 116 PB - IEEE ER - TY - JOUR A1 - Sokolowski-Tinten, Klaus A1 - Blome, Christian A1 - Dietrich, Clemens A1 - Tarasevitch, A. A1 - Horn-von Hoegen, Michael A1 - von der Linde, D. A1 - Cavalleri, Andrea A1 - Squier, Jeff A. A1 - Kammler, Martin T1 - Femtosecond x-ray measurement of ultrafast melting and large acoustic transients JF - Physical review letters N2 - Time-resolved x-ray diffraction with ultrashort ( approximately 300 fs), multi-keV x-ray pulses has been used to study the femtosecond laser-induced solid-to-liquid phase transition in a thin crystalline layer of germanium. Nonthermal melting is observed to take place within 300-500 fs. Following ultrafast melting we observe strong acoustic perturbations evolving on a picosecond time scale. Y1 - 2001 U6 - https://doi.org/10.1103/PhysRevLett.87.225701 VL - 87 PB - APS ER - TY - JOUR A1 - Sokolowski-Tinten, Klaus A1 - Blome, Christian A1 - Dietrich, Clemens A1 - Tarasevitch, A. A1 - Horn-von Hoegen, Michael A1 - von der Linde, D. A1 - Cavalleri, Andrea A1 - Squier, Jeff A. A1 - Kammler, Martin T1 - Femtosecond time-resolved X-ray diffraction study of ultrafast structural dynamics in laser-excited solids JF - International Conference on Ultrafast Phenomena, 12 May 2002, Vancouver Canada N2 - Time-resolved x-ray diffraction with sub-300 fs, multi-keV x-ray pulses was used to study ultrafast lattice dynamics in laser-irradiated germanium and bismuth. In bismuth strong excitation of optical phonons is observed prior to disordering of the material. Y1 - 2002 U6 - https://doi.org/10.1007/978-3-642-59319-2_10 VL - 71 SP - 36 EP - 38 PB - Optica Publishing Grou ER - TY - JOUR A1 - Horn-von Hoegen, Michael A1 - Meyer zu Heringdorf, Frank-Joachim A1 - Kammler, Martin A1 - Schaeffer, C. A1 - Reinking, D. A1 - Hofmann, K. R. T1 - Bi surfactant mediated epitaxy of Ge on Si(111) JF - Thin Solid Films N2 - We have tested Bi for the surfactant mediated epitaxy of Ge on Si(111). Islanding of Ge is prevented and a 2D layer growth of smooth and continuous Ge films is observed. The lattice mismatch is accommodated by a periodic array of dislocations confined to the Si/Ge interface. The large covalent radius of Bi reduces the binding energy, allowing Very efficient segregation and low doping levels even at low growth temperatures. Unfortunately, this results also in a high Bi desorption flux limiting the possible growth temperatures below 600 degrees C. Consequently the Ge films show a high defect density in the order of 10(8) cm(-2) for stacking faults and 10(9) cm(-2) for dislocations which limit electron Hall mobility to values below 700 cm(2)/V s at room temperature. KW - Hall mobility KW - Heteroepitaxial growth KW - Surfactants KW - Doping KW - Molecular beam epitaxy KW - Silicon KW - Germanium KW - Bismuth KW - Low energy electron diffraction KW - Scanning electron microscopy Y1 - 1999 U6 - https://doi.org/10.1016/S0040-6090(98)01659-9 VL - 343-344 SP - 579 EP - 582 PB - Elsevier ER - TY - JOUR A1 - Cavalleri, Andrea A1 - Siders, C. W. A1 - Brown, F. L. H. A1 - Leitner, D. M. A1 - Tóth, Csaba A1 - Squier, Jeff A. A1 - Barty, C. P. J. A1 - Wilson, K. R. A1 - Sokolowski-Tinten, Klaus A1 - Horn-von Hoegen, Michael A1 - von der Linde, D. A1 - Kammler, Martin T1 - Anharmonic lattice dynamics in germanium measured with ultrafast x-ray diffraction JF - Physical review letters N2 - Damping of impulsively generated coherent acoustic oscillations in a femtosecond laser-heated thin germanium film is measured as a function of fluence by means of ultrafast x-ray diffraction. By simultaneously measuring picosecond strain dynamics in the film and in the unexcited silicon substrate, we separate anharmonic damping from acoustic transmission through the buried interface. The measured damping rate and its dependence on the calculated temperature of the thermal bath is consistent with estimated four-body, elastic dephasing times (T2) for 7-GHz longitudinal acoustic phonons in germanium. Y1 - 2000 U6 - https://doi.org/10.1103/PhysRevLett.85.586 VL - 85 IS - 3 SP - 586 EP - 589 PB - APS ER - TY - JOUR A1 - Sokolowski-Tinten, Klaus A1 - Horn-von Hoegen, Michael A1 - von der Linde, D. A1 - Cavalleri, Andrea A1 - Siders, C. W. A1 - Brown, F. L. H. A1 - Tóth, Csaba A1 - Squier, Jeff A. A1 - Barty, C. P. J. A1 - Wilson, K. R. A1 - Kammler, Martin T1 - Time-resolved x-ray diffraction study of ultrafast acoustic phonon dynamics in Ge/Si-heterostructures JF - International Conference on Ultrafast Phenomena , 9 July 2000, Charleston N2 - Using time-resolved x-ray diffraction the ultafast strain dynamics in fs-laserexcited Ge/Si-heterostructures has been studied. A fluence dependent, anharmonic damping of the impulsively generated acoustic phonons and vibrational transport across the buried Ge/Si-interface are observed. KW - Acoustic Phonon KW - Acoustic Transmission KW - Carrier Diffusion KW - Homogenous Expansion KW - Lattice Anharmonicity Y1 - 2000 UR - https://opg.optica.org/abstract.cfm?uri=UP-2000-MF43 PB - Optica ER - TY - JOUR A1 - Siders, C. W. A1 - Cavalleri, Andrea A1 - Sokolowski-Tinten, Klaus A1 - Tóth, Csaba A1 - Guo, T. A1 - Kammler, Martin A1 - Horn-von Hoegen, Michael A1 - Wilson, K. R. A1 - von der Linde, D. A1 - Barty, C. P. J. T1 - Detection of nonthermal melting by ultrafast X-ray diffraction JF - Science N2 - Using ultrafast, time-resolved, 1.54 angstrom x-ray diffraction, thermal and ultrafast nonthermal melting of germanium, involving passage through nonequilibrium extreme states of matter, was observed. Such ultrafast, optical-pump, x-ray diffraction probe measurements provide a way to study many other transient processes in physics, chemistry, and biology, including direct observation of the atomic motion by which many solid-state processes and chemical and biochemical reactions take place. Y1 - 1999 U6 - https://doi.org/10.1126/science.286.5443.1340 VL - 286 IS - 5443 SP - 1340 EP - 1342 ER - TY - JOUR A1 - Reinking, D. A1 - Kammler, Martin A1 - Hoffmann, N. A1 - Horn-von Hoegen, Michael A1 - Hofmann, K. R. T1 - Fabrication of high-mobility Ge p-channel MOSFETs on Si substrates JF - Electronics Letters N2 - The first fabrication of Ge p-channel MOSFETs (p-MOSFETs) on Si substrates is reported. A CMOS compatible process based on relaxed Ge layers grown on Si(111) substrates by surfactant mediated epitaxy (SME) was used. The non-optimised low temperature process yielded normally-off Ge p-MOSFETs with record channel drift mobilities of 430 cm2/Vs KW - silicon KW - CMOS integrated circuits KW - germanium KW - carrier mobility KW - epitaxial growth KW - integrated circuit technology KW - elemental semiconductors KW - semiconductor growth KW - MOSFET KW - Insulated gate field effect transistors KW - Thin film growth and epitaxy Y1 - 1999 U6 - https://doi.org/10.1049/el:19990349 VL - 35 IS - 6 SP - 503 EP - 504 PB - IET ER - TY - JOUR A1 - Siders, C. W. A1 - Cavalleri, Andrea A1 - Sokolowski-Tinten, Klaus A1 - Tóth, Csaba A1 - Guo, T. A1 - Kammler, Martin A1 - Horn-von Hoegen, Michael A1 - Wilson, K. R. A1 - von der Linde, D. A1 - Barty, C. P. J. T1 - Direct Observation of Ultrafast Non-thermal Melting by Ultrafast X-ray Diffraction JF - Ultrafast Phenomena XII N2 - Ultrafast nonthermal melting of femtosecond laser-irradiated germanium was observed directly for the first time using sub-picosecond, 1.54-angstrom x-ray diffraction. Such measurements allow the study of transient atomic motion fundamental to many processes in physics, chemistry, and biology. Y1 - 2000 U6 - https://doi.org/10.1007/978-3-642-56546-5_80 VL - 66 SP - 276 EP - 280 PB - Springer ER - TY - CHAP A1 - Sokolowski-Tinten, Klaus A1 - von der Linde, D. A1 - Siders, C. W. A1 - Cavalleri, Andrea A1 - Tóth, Csaba A1 - Guo, T. A1 - Wilson, K. R. A1 - Barty, C. P. J. A1 - Kammler, Martin A1 - Horn-von Hoegen, Michael T1 - Lattice dynamics of femtosecond laser-excited semiconductors probed by ultrafast x-ray diffraction T2 - Applications of High Field and Short Wavelength Sources VIII N2 - The present knowledge of the atomic structure of matter is to a large extent due to x-ray spectroscopies. Y1 - 1999 U6 - https://doi.org/10.1364/HFSW.1999.PD3 PB - Optica ER - TY - JOUR A1 - Schmidt, Thomas A1 - Kröger, Roland A1 - Flege, Jan Ingo A1 - Horn-von Hoegen, Michael A1 - Clausen, T. A1 - Falta, J. A1 - Janzen, Andreas A1 - Zahl, P. A1 - Kury, P. A1 - Kammler, Martin T1 - Less strain energy despite fewer misfit dislocations: the impact of ordering JF - Physical review letters N2 - The average strain state of Ge films grown on Si(111) by surfactant mediated epitaxy has been compared to the ordering of the interfacial misfit dislocation network. Surprisingly, a smaller degree of average lattice relaxation was found in films grown at higher temperature. On the other hand, these films exhibit a better ordered dislocation network. This effect energetically compensates the higher strain at higher growth temperature, leading to the conclusion that, apart from the formation of misfit dislocations, their ordering represents an important channel for lattice-strain energy relaxation. Y1 - 2006 U6 - https://doi.org/10.1103/PhysRevLett.96.066101 VL - 96 IS - 6 PB - APS ER - TY - JOUR A1 - Hanisch-Blicharski, Anja A1 - Janzen, Andreas A1 - Krenzer, Boris A1 - Wall, S. A1 - Klasing, Friedrich A1 - Kalus, Annika A1 - Frigge, Tim A1 - Kammler, Martin A1 - Horn-von Hoegen, Michael T1 - Ultra-fast electron diffraction at surfaces: from nanoscale heat transport to driven phase transitions JF - Ultramicroscopy N2 - Many fundamental processes of structural changes at surfaces occur on a pico- or femtosecond time scale. In order to study such ultra-fast processes, we have combined modern surface science techniques with fs-laser pulses in a pump-probe scheme. Reflection high energy electron diffraction (RHEED) with grazing incident electrons ensures surface sensitivity for the probing electron pulses. Utilizing the Debye-Waller effect, we studied the cooling of vibrational excitations in monolayer adsorbate systems or the nanoscale heat transport from an ultra-thin film through a hetero-interface on the lower ps-time scale. The relaxation dynamics of a driven phase transition far away from thermal equilibrium is demonstrated with the In-induced (8×2) reconstruction on Si(111). This surface exhibits a Peierls-like phase transition at 100K from a (8×2) ground state to (4×1) excited state. Upon excitation by a fs-laser pulse, this structural phase transition is driven into an excited (4×1) state at a sample temperature of 20K. Relaxation into the (8×2) ground state occurs after more than 150 ps. Y1 - 2013 U6 - https://doi.org/10.1016/j.ultramic.2012.07.017 VL - 127 SP - 2 EP - 8 PB - Elsevier ER - TY - JOUR A1 - Streubühr, C. A1 - Kalus, Annika A1 - Zhou, Ping A1 - Ligges, Manuel A1 - Hanisch-Blicharski, Anja A1 - Kammler, Martin A1 - Bovensiepen, U. A1 - Horn-von Hoegen, Michael A1 - von der Linde, D. T1 - Comparing ultrafast surface and bulk heating using time-resolved electron diffraction JF - Applied Physics Letters N2 - From measurements of the transient Debye-Waller effect in Bismuth, we determine the buildup time of the random atomic motion resulting from the electronic relaxation after short pulse laser excitation. The surface sensitive reflection high energy electron diffraction and transmission electron diffraction yield a time constant of about 12 ps and 3 ps, respectively. The different energy transfer rates indicate relatively weak coupling between bulk and surface vibrational modes. (C) 2014 AIP Publishing LLC. Y1 - 2014 U6 - https://doi.org/10.1063/1.4872055 VL - 104 SP - 1 EP - 3 PB - American Institute of Physics ER -