TY - CHAP A1 - Sokolowski-Tinten, Klaus A1 - Blome, Christian A1 - Dietrich, Clemens A1 - Blums, Juris A1 - Horn-von Hoegen, Michael A1 - von der Linde, D. A1 - Cavalleri, Andrea A1 - Squier, Jeff A. A1 - Kammler, Martin T1 - Structural dynamics in laser-excited solids investigated with femtosecond x-ray diffraction T2 - 2002 Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, 19-24 May 2002, Long Beach, CA, USA N2 - Summary form only given. Ultrashort x-ray pulses offer a unique combination of atomic-scale spatial and temporal resolution, which permits direct measurements of structural transients on an ultrafast time scale. Using time-resolved X-ray diffraction with femtosecond, multi-keV X-ray pulses we have studied transient lattice dynamics in optically excited semiconductors. Y1 - 2002 U6 - https://doi.org/10.1109/QELS.2002.1031182 SP - 115 EP - 116 PB - IEEE ER - TY - JOUR A1 - Sokolowski-Tinten, Klaus A1 - Blome, Christian A1 - Dietrich, Clemens A1 - Tarasevitch, A. A1 - Horn-von Hoegen, Michael A1 - von der Linde, D. A1 - Cavalleri, Andrea A1 - Squier, Jeff A. A1 - Kammler, Martin T1 - Femtosecond x-ray measurement of ultrafast melting and large acoustic transients JF - Physical review letters N2 - Time-resolved x-ray diffraction with ultrashort ( approximately 300 fs), multi-keV x-ray pulses has been used to study the femtosecond laser-induced solid-to-liquid phase transition in a thin crystalline layer of germanium. Nonthermal melting is observed to take place within 300-500 fs. Following ultrafast melting we observe strong acoustic perturbations evolving on a picosecond time scale. Y1 - 2001 U6 - https://doi.org/10.1103/PhysRevLett.87.225701 VL - 87 PB - APS ER - TY - JOUR A1 - Sokolowski-Tinten, Klaus A1 - Blome, Christian A1 - Dietrich, Clemens A1 - Tarasevitch, A. A1 - Horn-von Hoegen, Michael A1 - von der Linde, D. A1 - Cavalleri, Andrea A1 - Squier, Jeff A. A1 - Kammler, Martin T1 - Femtosecond time-resolved X-ray diffraction study of ultrafast structural dynamics in laser-excited solids JF - International Conference on Ultrafast Phenomena, 12 May 2002, Vancouver Canada N2 - Time-resolved x-ray diffraction with sub-300 fs, multi-keV x-ray pulses was used to study ultrafast lattice dynamics in laser-irradiated germanium and bismuth. In bismuth strong excitation of optical phonons is observed prior to disordering of the material. Y1 - 2002 U6 - https://doi.org/10.1007/978-3-642-59319-2_10 VL - 71 SP - 36 EP - 38 PB - Optica Publishing Grou ER - TY - JOUR A1 - Horn-von Hoegen, Michael A1 - Meyer zu Heringdorf, Frank-Joachim A1 - Kammler, Martin A1 - Schaeffer, C. A1 - Reinking, D. A1 - Hofmann, K. R. T1 - Bi surfactant mediated epitaxy of Ge on Si(111) JF - Thin Solid Films N2 - We have tested Bi for the surfactant mediated epitaxy of Ge on Si(111). Islanding of Ge is prevented and a 2D layer growth of smooth and continuous Ge films is observed. The lattice mismatch is accommodated by a periodic array of dislocations confined to the Si/Ge interface. The large covalent radius of Bi reduces the binding energy, allowing Very efficient segregation and low doping levels even at low growth temperatures. Unfortunately, this results also in a high Bi desorption flux limiting the possible growth temperatures below 600 degrees C. Consequently the Ge films show a high defect density in the order of 10(8) cm(-2) for stacking faults and 10(9) cm(-2) for dislocations which limit electron Hall mobility to values below 700 cm(2)/V s at room temperature. KW - Hall mobility KW - Heteroepitaxial growth KW - Surfactants KW - Doping KW - Molecular beam epitaxy KW - Silicon KW - Germanium KW - Bismuth KW - Low energy electron diffraction KW - Scanning electron microscopy Y1 - 1999 U6 - https://doi.org/10.1016/S0040-6090(98)01659-9 VL - 343-344 SP - 579 EP - 582 PB - Elsevier ER - TY - JOUR A1 - Cavalleri, Andrea A1 - Siders, C. W. A1 - Brown, F. L. H. A1 - Leitner, D. M. A1 - Tóth, Csaba A1 - Squier, Jeff A. A1 - Barty, C. P. J. A1 - Wilson, K. R. A1 - Sokolowski-Tinten, Klaus A1 - Horn-von Hoegen, Michael A1 - von der Linde, D. A1 - Kammler, Martin T1 - Anharmonic lattice dynamics in germanium measured with ultrafast x-ray diffraction JF - Physical review letters N2 - Damping of impulsively generated coherent acoustic oscillations in a femtosecond laser-heated thin germanium film is measured as a function of fluence by means of ultrafast x-ray diffraction. By simultaneously measuring picosecond strain dynamics in the film and in the unexcited silicon substrate, we separate anharmonic damping from acoustic transmission through the buried interface. The measured damping rate and its dependence on the calculated temperature of the thermal bath is consistent with estimated four-body, elastic dephasing times (T2) for 7-GHz longitudinal acoustic phonons in germanium. Y1 - 2000 U6 - https://doi.org/10.1103/PhysRevLett.85.586 VL - 85 IS - 3 SP - 586 EP - 589 PB - APS ER - TY - JOUR A1 - Sokolowski-Tinten, Klaus A1 - Horn-von Hoegen, Michael A1 - von der Linde, D. A1 - Cavalleri, Andrea A1 - Siders, C. W. A1 - Brown, F. L. H. A1 - Tóth, Csaba A1 - Squier, Jeff A. A1 - Barty, C. P. J. A1 - Wilson, K. R. A1 - Kammler, Martin T1 - Time-resolved x-ray diffraction study of ultrafast acoustic phonon dynamics in Ge/Si-heterostructures JF - International Conference on Ultrafast Phenomena , 9 July 2000, Charleston N2 - Using time-resolved x-ray diffraction the ultafast strain dynamics in fs-laserexcited Ge/Si-heterostructures has been studied. A fluence dependent, anharmonic damping of the impulsively generated acoustic phonons and vibrational transport across the buried Ge/Si-interface are observed. KW - Acoustic Phonon KW - Acoustic Transmission KW - Carrier Diffusion KW - Homogenous Expansion KW - Lattice Anharmonicity Y1 - 2000 UR - https://opg.optica.org/abstract.cfm?uri=UP-2000-MF43 PB - Optica ER - TY - JOUR A1 - Siders, C. W. A1 - Cavalleri, Andrea A1 - Sokolowski-Tinten, Klaus A1 - Tóth, Csaba A1 - Guo, T. A1 - Kammler, Martin A1 - Horn-von Hoegen, Michael A1 - Wilson, K. R. A1 - von der Linde, D. A1 - Barty, C. P. J. T1 - Detection of nonthermal melting by ultrafast X-ray diffraction JF - Science N2 - Using ultrafast, time-resolved, 1.54 angstrom x-ray diffraction, thermal and ultrafast nonthermal melting of germanium, involving passage through nonequilibrium extreme states of matter, was observed. Such ultrafast, optical-pump, x-ray diffraction probe measurements provide a way to study many other transient processes in physics, chemistry, and biology, including direct observation of the atomic motion by which many solid-state processes and chemical and biochemical reactions take place. Y1 - 1999 U6 - https://doi.org/10.1126/science.286.5443.1340 VL - 286 IS - 5443 SP - 1340 EP - 1342 ER - TY - JOUR A1 - Reinking, D. A1 - Kammler, Martin A1 - Hoffmann, N. A1 - Horn-von Hoegen, Michael A1 - Hofmann, K. R. T1 - Fabrication of high-mobility Ge p-channel MOSFETs on Si substrates JF - Electronics Letters N2 - The first fabrication of Ge p-channel MOSFETs (p-MOSFETs) on Si substrates is reported. A CMOS compatible process based on relaxed Ge layers grown on Si(111) substrates by surfactant mediated epitaxy (SME) was used. The non-optimised low temperature process yielded normally-off Ge p-MOSFETs with record channel drift mobilities of 430 cm2/Vs KW - silicon KW - CMOS integrated circuits KW - germanium KW - carrier mobility KW - epitaxial growth KW - integrated circuit technology KW - elemental semiconductors KW - semiconductor growth KW - MOSFET KW - Insulated gate field effect transistors KW - Thin film growth and epitaxy Y1 - 1999 U6 - https://doi.org/10.1049/el:19990349 VL - 35 IS - 6 SP - 503 EP - 504 PB - IET ER - TY - JOUR A1 - Siders, C. W. A1 - Cavalleri, Andrea A1 - Sokolowski-Tinten, Klaus A1 - Tóth, Csaba A1 - Guo, T. A1 - Kammler, Martin A1 - Horn-von Hoegen, Michael A1 - Wilson, K. R. A1 - von der Linde, D. A1 - Barty, C. P. J. T1 - Direct Observation of Ultrafast Non-thermal Melting by Ultrafast X-ray Diffraction JF - Ultrafast Phenomena XII N2 - Ultrafast nonthermal melting of femtosecond laser-irradiated germanium was observed directly for the first time using sub-picosecond, 1.54-angstrom x-ray diffraction. Such measurements allow the study of transient atomic motion fundamental to many processes in physics, chemistry, and biology. Y1 - 2000 U6 - https://doi.org/10.1007/978-3-642-56546-5_80 VL - 66 SP - 276 EP - 280 PB - Springer ER - TY - CHAP A1 - Sokolowski-Tinten, Klaus A1 - von der Linde, D. A1 - Siders, C. W. A1 - Cavalleri, Andrea A1 - Tóth, Csaba A1 - Guo, T. A1 - Wilson, K. R. A1 - Barty, C. P. J. A1 - Kammler, Martin A1 - Horn-von Hoegen, Michael T1 - Lattice dynamics of femtosecond laser-excited semiconductors probed by ultrafast x-ray diffraction T2 - Applications of High Field and Short Wavelength Sources VIII N2 - The present knowledge of the atomic structure of matter is to a large extent due to x-ray spectroscopies. Y1 - 1999 U6 - https://doi.org/10.1364/HFSW.1999.PD3 PB - Optica ER - TY - JOUR A1 - Schmidt, Thomas A1 - Kröger, Roland A1 - Flege, Jan Ingo A1 - Horn-von Hoegen, Michael A1 - Clausen, T. A1 - Falta, J. A1 - Janzen, Andreas A1 - Zahl, P. A1 - Kury, P. A1 - Kammler, Martin T1 - Less strain energy despite fewer misfit dislocations: the impact of ordering JF - Physical review letters N2 - The average strain state of Ge films grown on Si(111) by surfactant mediated epitaxy has been compared to the ordering of the interfacial misfit dislocation network. Surprisingly, a smaller degree of average lattice relaxation was found in films grown at higher temperature. On the other hand, these films exhibit a better ordered dislocation network. This effect energetically compensates the higher strain at higher growth temperature, leading to the conclusion that, apart from the formation of misfit dislocations, their ordering represents an important channel for lattice-strain energy relaxation. Y1 - 2006 U6 - https://doi.org/10.1103/PhysRevLett.96.066101 VL - 96 IS - 6 PB - APS ER - TY - JOUR A1 - Hanisch-Blicharski, Anja A1 - Janzen, Andreas A1 - Krenzer, Boris A1 - Wall, S. A1 - Klasing, Friedrich A1 - Kalus, Annika A1 - Frigge, Tim A1 - Kammler, Martin A1 - Horn-von Hoegen, Michael T1 - Ultra-fast electron diffraction at surfaces: from nanoscale heat transport to driven phase transitions JF - Ultramicroscopy N2 - Many fundamental processes of structural changes at surfaces occur on a pico- or femtosecond time scale. In order to study such ultra-fast processes, we have combined modern surface science techniques with fs-laser pulses in a pump-probe scheme. Reflection high energy electron diffraction (RHEED) with grazing incident electrons ensures surface sensitivity for the probing electron pulses. Utilizing the Debye-Waller effect, we studied the cooling of vibrational excitations in monolayer adsorbate systems or the nanoscale heat transport from an ultra-thin film through a hetero-interface on the lower ps-time scale. The relaxation dynamics of a driven phase transition far away from thermal equilibrium is demonstrated with the In-induced (8×2) reconstruction on Si(111). This surface exhibits a Peierls-like phase transition at 100K from a (8×2) ground state to (4×1) excited state. Upon excitation by a fs-laser pulse, this structural phase transition is driven into an excited (4×1) state at a sample temperature of 20K. Relaxation into the (8×2) ground state occurs after more than 150 ps. Y1 - 2013 U6 - https://doi.org/10.1016/j.ultramic.2012.07.017 VL - 127 SP - 2 EP - 8 PB - Elsevier ER - TY - JOUR A1 - Streubühr, C. A1 - Kalus, Annika A1 - Zhou, Ping A1 - Ligges, Manuel A1 - Hanisch-Blicharski, Anja A1 - Kammler, Martin A1 - Bovensiepen, U. A1 - Horn-von Hoegen, Michael A1 - von der Linde, D. T1 - Comparing ultrafast surface and bulk heating using time-resolved electron diffraction JF - Applied Physics Letters N2 - From measurements of the transient Debye-Waller effect in Bismuth, we determine the buildup time of the random atomic motion resulting from the electronic relaxation after short pulse laser excitation. The surface sensitive reflection high energy electron diffraction and transmission electron diffraction yield a time constant of about 12 ps and 3 ps, respectively. The different energy transfer rates indicate relatively weak coupling between bulk and surface vibrational modes. (C) 2014 AIP Publishing LLC. Y1 - 2014 U6 - https://doi.org/10.1063/1.4872055 VL - 104 SP - 1 EP - 3 PB - American Institute of Physics ER - TY - CHAP A1 - Shymanovich, Uladzimir A1 - Nicoul, Matthieu A1 - Lu, Wei A1 - Tarasevitch, A. A1 - Kammler, Martin A1 - Horn-von Hoegen, Michael A1 - von der Linde, D. A1 - Sokolowski-Tinten, Klaus A1 - Phipps, Claude T1 - Coherent acoustic and optical phonons in laser-excited solids studied by ultrafast time-resolved X-ray diffraction T2 - AIP Conference Proceedings N2 - We apply ultrafast time‐resolved X‐ray diffraction to directly study coherent acoustic and optical phonons in laser‐excited materials. In Au the ps acoustic response has been investigated with the particular goal to clarify the interplay of electronic and thermal pressure contributions. In Bi the extreme softening of the coherently excited A 1 g optical phonon presents strong indication that upon intense laser‐excitation the Peierls‐transition which determines the equilibrium structure of Bi can be reversed. In FeRh we studied the lattice response after a fast laser‐induced anti‐ferromagnetic to ferromagnetic phase transition. Y1 - 2010 U6 - https://doi.org/10.1063/1.3507146 IS - 1 SP - 558 EP - 566 PB - AIP ER - TY - JOUR A1 - Payer, Thomas A1 - Klein, C. A1 - Acet, M. A1 - Ney, V. A1 - Kammler, Martin A1 - Meyer zu Heringdorf, Frank-Joachim A1 - Horn-von Hoegen, Michael T1 - High-quality epitaxial Bi(111) films on Si(111) by isochronal annealing JF - Thin Solid Films N2 - Bi(111) films grown on Si(111) at room temperature show a significantly higher roughness compared to Bi films grown on Si(100) utilizing a kinetic pathway based on a low-temperature process. Isochronal annealing steps of 3 min duration each with temperatures up to 200 °C cause a relaxation of the Bi films' lattice parameter toward the Bi bulk value and yield an atomically flat Bi surface. Driving force for the relaxation and surface reordering is the magic mismatch of 11 Bi atoms to 13 Si atoms that emerges at annealing temperatures above 150 °C and reduces the remaining strain to less than 0.2%. KW - Epitaxy KW - Strain KW - Annealing KW - Bismuth KW - Silicon Y1 - 2012 U6 - https://doi.org/10.1016/j.tsf.2012.06.004 VL - 520 IS - 23 SP - 6905 EP - 6908 PB - Elsevier ER -