TY - JOUR A1 - Horn-von Hoegen, Michael A1 - Meyer zu Heringdorf, Frank-Joachim A1 - Kammler, Martin A1 - Schaeffer, C. A1 - Reinking, D. A1 - Hofmann, K. R. T1 - Bi surfactant mediated epitaxy of Ge on Si(111) JF - Thin Solid Films N2 - We have tested Bi for the surfactant mediated epitaxy of Ge on Si(111). Islanding of Ge is prevented and a 2D layer growth of smooth and continuous Ge films is observed. The lattice mismatch is accommodated by a periodic array of dislocations confined to the Si/Ge interface. The large covalent radius of Bi reduces the binding energy, allowing Very efficient segregation and low doping levels even at low growth temperatures. Unfortunately, this results also in a high Bi desorption flux limiting the possible growth temperatures below 600 degrees C. Consequently the Ge films show a high defect density in the order of 10(8) cm(-2) for stacking faults and 10(9) cm(-2) for dislocations which limit electron Hall mobility to values below 700 cm(2)/V s at room temperature. KW - Hall mobility KW - Heteroepitaxial growth KW - Surfactants KW - Doping KW - Molecular beam epitaxy KW - Silicon KW - Germanium KW - Bismuth KW - Low energy electron diffraction KW - Scanning electron microscopy Y1 - 1999 U6 - https://doi.org/10.1016/S0040-6090(98)01659-9 VL - 343-344 SP - 579 EP - 582 PB - Elsevier ER - TY - JOUR A1 - Reinking, D. A1 - Kammler, Martin A1 - Hoffmann, N. A1 - Horn-von Hoegen, Michael A1 - Hofmann, K. R. T1 - Fabrication of high-mobility Ge p-channel MOSFETs on Si substrates JF - Electronics Letters N2 - The first fabrication of Ge p-channel MOSFETs (p-MOSFETs) on Si substrates is reported. A CMOS compatible process based on relaxed Ge layers grown on Si(111) substrates by surfactant mediated epitaxy (SME) was used. The non-optimised low temperature process yielded normally-off Ge p-MOSFETs with record channel drift mobilities of 430 cm2/Vs KW - silicon KW - CMOS integrated circuits KW - germanium KW - carrier mobility KW - epitaxial growth KW - integrated circuit technology KW - elemental semiconductors KW - semiconductor growth KW - MOSFET KW - Insulated gate field effect transistors KW - Thin film growth and epitaxy Y1 - 1999 U6 - https://doi.org/10.1049/el:19990349 VL - 35 IS - 6 SP - 503 EP - 504 PB - IET ER -