TY - JOUR A1 - Hofmann, A. A1 - Hierl, Stefan T1 - Kontrolliertes Laserdurchstrahlschweißen JF - Kunststoffe N2 - Obwohl das Laserdurchstrahlschweißen sehr reproduzierbar arbeitet, können Fehler aus den Vorprozessen Compoundieren, Spritzgießen etc. das Schweißergebnis negativ beeinflussen. Dem Anwender steht inzwischen eine breite Palette an Prozessüberwachungsmethoden zur Verfügung, um eine gleich bleibende Produktqualität zu erzielen. Y1 - 2005 UR - https://res.cloudinary.com/sternwald-systems/raw/upload/v1/hugoprd/ARTIKEL_ATTACH/0023FE89_2E241FF70B1C/cf76c9103f760b78d6a3d1b7ecab28f0903541fb/KU_2005_06_Qualitaetssicherung-Kontrolliertes-Laserdurchstrahlschweissen.pdf VL - 95 IS - 6 SP - 36 EP - 38 PB - Hanser ER - TY - CHAP A1 - Schreiner, Rupert A1 - Langer, Christoph A1 - Prommesberger, Christian A1 - Ławrowski, Robert Damian A1 - Dams, Florian A1 - Bachmann, Michael A1 - Düsberg, F. A1 - Hofmann, M. A1 - Pahlke, A. A1 - Serbun, Pavel A1 - Mingels, S. A1 - Müller, Günter T1 - Semiconductor field emission electron sources using a modular system concept for application in sensors and x-ray-sources T2 - 2015 28th International Vacuum Nanoelectronics Conference (IVNC), 13-17 July 2015, Guangzhou, China N2 - Semiconductor field emitters are suitable candidates for applications, which require a very stable field emission (FE) current and a high emission uniformity over the entire emission area. By using different materials and geometries, we are able to vary the FE characteristics within a wide range. Each specific application requires its own optimized design for the cathode as well as for the other parts of the FE electron source. To meet as many of these requirements as possible while using only a limited number of different prefabricated components, we established a modular system concept for our FE electron source. This allows the implementation of almost every cathode material. For first characterizations, we used gated p-type Si cathodes with 16 tips. We obtained stable FE currents of 0.4 μA for a grid-potential of 400 V and a gate potential of 100 V. Almost 100% of the electrons are emitted towards the grid-electrode. Parasitic leakage paths, as well as the electron emission towards the gate-electrode can be neglected. Approximately 10% of the electrons are transmitted through the grid and reach the external anode. This is in good agreement with the optical transmission through the grid-mesh. KW - Anodes KW - CATHODES KW - electron sources KW - GEOMETRY KW - Iron KW - Logic gates KW - semiconductor field emission KW - silicon Y1 - 2015 U6 - https://doi.org/10.1109/IVNC.2015.7225572 SP - 178 EP - 179 PB - IEEE ER - TY - CHAP A1 - Bachmann, Michael A1 - Dams, Florian A1 - Düsberg, F. A1 - Hofmann, M. A1 - Pahlke, A. A1 - Langer, Christoph A1 - Ławrowski, Robert Damian A1 - Prommesberger, Christian A1 - Schreiner, Rupert T1 - Stability investigation of high aspect ratio n-type silicon field emitter arrays T2 - 2015 28th International Vacuum Nanoelectronics Conference (IVNC), 13-17 July 2015, Guangzhou, China N2 - Electron sources based on silicon field emitter arrays, produced in processes based on semiconductor technology, are good candidates for a miniaturized X-ray source. A key parameter for this application is the stability of the X-ray photon flux and, thus, the emission current. In the present work we have investigated the influence of the residual gas pressure and a resistor in series on the emission stability of a high aspect ratio n-type silicon emitter array with hybrid extraction electrode. An increase of current fluctuations was found for pressures above 10-6 mbar. High resistances in series to the emitter array alter the emission characteristics, but greatly suppress spikes in the emission current and improve its stability. This, however, strongly depends on the bias point. The field enhancement factor is not affected by the resistance. In a long term measurement the emission current was found to be constant after an initial phase of degradation. KW - Current measurement KW - emission current stability KW - field emitter array KW - Field emitter arrays KW - RESISTANCE KW - Resistors KW - semiconductor field emission KW - silicon KW - silicon tips KW - Stability analysis KW - Thermal stability KW - XRF spectroscopy Y1 - 2015 U6 - https://doi.org/10.1109/IVNC.2015.7225584 SP - 204 EP - 205 PB - IEEE ER -