TY - JOUR A1 - Hild, R. A1 - Seifert, C. A1 - Kammler, Martin A1 - Meyer zu Heringdorf, Frank-Joachim A1 - Horn-von Hoegen, Michael A1 - Zhachuk, R.A A1 - Olshanetsky, B.Z T1 - Kinetics of Au induced faceting of vicinal Si(111) JF - Surface Science N2 - Au induced faceting of vicinal Si(1 1 1) has been studied during adsorption at elevated temperature by spot profile analyzing of low energy electron diffraction and after quenching to room temperature by scanning tunneling microscopy. On the surfaces inclined towards five different types of facets form with increasing Au coverage at adsorption temperatures Tads below 800 °C. They are (4 4 3), (7 7 5), (5 5 3), a stepped (2 2 1), and the (3 3 1) facets. Atomic models for the (5 5 3) and (7 7 5) facet planes are proposed on the basis of high resolution STM images. At C we found the formation of an ordered step train which covers the entire surface. With further increasing Au coverage the stepped surface decomposes again into (1 1 1) terraces and step bunches. Driving force is the formation of the Si(1 1 1)-(5×2)–Au reconstruction. KW - Low energy electron diffraction (LEED) KW - Scanning tunneling microscopy KW - Silicon KW - Gold KW - Faceting KW - Adsorption kinetics KW - Step formation and bunching Y1 - 2002 U6 - https://doi.org/10.1016/S0039-6028(02)01666-7 VL - 512 IS - 1-2 SP - 117 EP - 127 PB - Elsevier ER -