TY - CHAP A1 - Buchner, Philipp A1 - Kaiser, Alexander A1 - Hausladen, Matthias A1 - Bartl, Mathias A1 - Bachmann, Michael A1 - Schreiner, Rupert T1 - Silicon Nanowire Field Emitters with Integrated Extraction Gates Using Benzocyclobutene as an Insulator T2 - 37th International Vacuum Nanoelectronics Conference (IVNC), 15-19 July 2024, Brno, Czech Republic N2 - We are continuously improving the performance of our field emission electron sources. In this work a geometrically optimized design of electron sources with silicon nanowire field emitters on pillars was fabricated. This new design increased the packing density of the emitters by using a hexagonal arrangement of the pillars and a pillar spacing of 40 µm. Benzocyclobutene was used as the insulator material for an integrated (Cr/Ni) extraction gate. A modified fabrication process for the field emitters further improved reproducibility and reliability. An emission current of about 0.4 mA was measured for 30 minutes at an extraction voltage of 250 V and an anode voltage of 500 V. Electron transmission through the gate reached almost 100%. Y1 - 2024 U6 - https://doi.org/10.1109/IVNC63480.2024.10652314 SP - 1 EP - 2 PB - IEEE ER - TY - CHAP A1 - Hausladen, Matthias A1 - Bomke, Vitali A1 - Buchner, Philipp A1 - Bachmann, Michael A1 - Knapek, Alexandr A1 - Schreiner, Rupert T1 - Influence of Geometrical Arrangements of Si Tip Arrays Fabricated by Laser Micromachining on their Emission Behaviour T2 - 2021 34th International Vacuum Nanoelectronics Conference (IVNC): 7/5/2021 - 7/9/2021, Lyon, France N2 - ensely packed emitters on a field emission array lead typically to mutual shielding. Taking biology as a role model for geometric arrangements could be a way to reduce this effect. For comparison, two electron sources, one with a spiral and a second with conventional rectangular (orthogonal) arranged emitters, were fabricated and investigated. Emission currents of 6 µA in the spiral ordered array and 120 µA in the rectangular array were reached with an extraction voltage of 400 V. From a mid-term measurement over 1 h a current stability of ±8.8 % (spiral) respectively ±5.7 % (rectangular) with a mean degradation of -3.0 µA/h (spiral) and -0.12 µA/h (rectangular) could be observed. KW - aperture field KW - emission grid KW - Fabrication KW - laser micromachining KW - parastichy tip arrangements KW - silicon field emission KW - Stability analysis KW - Spirals KW - Field emitter array KW - Voltage measurement Y1 - 2021 SN - 978-1-6654-2589-6 U6 - https://doi.org/10.1109/IVNC52431.2021.9600717 SN - 2380-6311 PB - IEEE CY - Piscataway, N.J. ER - TY - CHAP A1 - Buchner, Philipp A1 - Bomke, Vitali A1 - Hausladen, Matthias A1 - Edler, Simon A1 - Bachmann, Michael A1 - Schreiner, Rupert T1 - Investigation on the Emission Behaviour of p-doped Silicon Field Emission Arrays with Individually Controllable Single Tips T2 - 2021 34th International Vacuum Nanoelectronics Conference (IVNC): 7/5/2021 - 7/9/2021, Lyon, France N2 - Four individually controllable emission tips consisting of <111> p-Type silicon, were structured on a glass substrate by laser ablation. A matching extraction grid was manufactured in the same manner and aligned with the emitters. The resulting samples were characterized in ultra-high vacuum. As expected, the individual currents show a strong saturation and in the saturation region a considerably lower current fluctuation than n-type silicon due to charge carrier depletion. The individual tips behave completely independent behaviour from each other and the overall emission can be deduced from the sum of the currents through the individual tips. Y1 - 2021 SN - 978-1-6654-2589-6 U6 - https://doi.org/10.1109/IVNC52431.2021.9600756 SP - 1 EP - 2 PB - IEEE ER - TY - CHAP A1 - Hecht, Fabian A1 - Bauereiβ, Florian A1 - Sellmair, Josef A1 - Buchner, Philipp A1 - Hausladen, Matthias A1 - Schreiner, Rupert T1 - Electron Beam Induced Growth of Carbon Nanotips on Tungsten and Silicon Fieldemitters T2 - 2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA N2 - In our experiments we grew electron emitting carbon nanostructures on tungsten tips. Subsequently, we transferred the growth process to pre-structured phosphorus-doped n-type silicon and obtained emitting carbon nanostructures directly grown on silicon. After growth of the nanostructures, the silicon field emitters showed increased emission currents of 76 nA at 1.1 kV (compared to 6 nA under the same conditions before growth). KW - Behavioral sciences KW - Nanostructures KW - Silicon KW - Carbon dioxide KW - Current measurement KW - Electron beams KW - Tungsten Y1 - 2023 SN - 979-8-3503-0143-4 U6 - https://doi.org/10.1109/IVNC57695.2023.10188960 SP - 160 EP - 162 PB - IEEE ER - TY - CHAP A1 - Podstránský, Jáchym A1 - Hausladen, Matthias A1 - Zlámal, Jakub A1 - Knápek, Alexandr A1 - Schreiner, Rupert T1 - Single Column Multiple Electron Beam Imaging from N-Type Silicon T2 - 37th International Vacuum Nanoelectronics Conference (IVNC), 15-19 July 2024, Brno, Czech Republic N2 - This work is aimed at measuring the electron emission from multiple cathodes formed by n-doped silicon and imaging the electron beams focused by an einzel lens on a CMOS camera. The experimental results are compared with computer simulation to understand the electron emission from the semiconductor cathode and the observed imaging imperfections. Finally, modifications to the experimental setup are suggested that should lead to improvement in the extraction current and spot size of focused electron beams and also better understanding of the processes taking place in the experiment. Y1 - 2024 SN - 979-8-3503-7976-1 U6 - https://doi.org/10.1109/IVNC63480.2024.10652470 SP - 1 EP - 2 PB - IEEE ER - TY - CHAP A1 - Bartl, Mathias A1 - Buchner, Philipp A1 - Hausladen, Matthias A1 - Asgharzadehkhorasani, Ali A1 - Bachmann, Michael A1 - Schreiner, Rupert T1 - Simulations and Investigations of Silicon Nanowire Field Emitters T2 - 37th International Vacuum Nanoelectronics Conference (IVNC), 15-19 July 2024, Brno, Czech Republic N2 - The emission behavior of field emission electron sources consisting of a silicon nanowire cathode, an extraction grid electrode and a planar anode was investigated based on a particle tracing simulation using FEM. The focus was on the influence of the grid geometry as well as the positioning of the grid relative to the emitters on the electron transmission. The highest transmission can be achieved with the emitter tips protruding 10 µm trough the extraction grid openings. The transmission decreases more rapidly with increasing distance between the tip and the grid the thicker the grid is. Y1 - 2024 U6 - https://doi.org/10.1109/IVNC63480.2024.10652355 SP - 1 EP - 2 PB - IEEE ER - TY - CHAP A1 - Krysztof, Michał A1 - Urbański, Paweł A1 - Grzebyk, Tomasz A1 - Hausladen, Matthias A1 - Schreiner, Rupert T1 - MEMS X-Ray Source: Electron Emitter Development T2 - 2022 21st International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications (PowerMEMS): 12-15 Dec. 2022, Salt Lake City, UT, USA N2 - The article presents a fabrication process and characterization of silicon emitters designed for MEMS X-ray source. The emitters, made of p-type and n-type silicon, were prepared by a modified laser micromachining process. Both types of emitters worked without any carbon nanotube coverage, which was the case in the previous realization of electron emitters. The p-type emitter gave smaller electron beam currents (<50 nA) with stable emission in a saturation region. The n-type emitter provides higher emission currents (>1 µA) not limited by saturation region, but with higher fluctuations. The final choice of emitter will be adjusted for different applications. KW - Micromechanical devices KW - MEMS KW - X-ray source KW - electron emitter KW - X-ray radiation Y1 - 2022 U6 - https://doi.org/10.1109/PowerMEMS56853.2022.10007563 SP - 248 EP - 251 PB - IEEE ER - TY - CHAP A1 - Langer, Christoph A1 - Hausladen, Matthias A1 - Prommesberger, Christian A1 - Ławrowski, Robert Damian A1 - Bachmann, Michael A1 - Düsberg, Felix A1 - Pahlke, Andreas A1 - Shamonin (Chamonine), Mikhail A1 - Schreiner, Rupert T1 - Field emission current investigation of p-type and metallized silicon emitters in the frequency domain T2 - International Vacuum Nanoelectronics Conference (IVNC), 31st, 2018, Kyoto, Japan N2 - We investigated two different field emitter arrays consisting of 10×10 p-type and 10×10 undoped Au-coated high aspect ratio silicon tips. The I-V characterization of the p-type sample showed a pronounced saturation for voltages higher than 500 V and a maximum emission current of 39 nA. The metallized sample revealed a FN-like emission up to several μA. The metallized and the p-type sample operating below the saturation region showed high current fluctuations of ±16%. Whereas, the metallized sample with current regulation and the p-type sample in the saturation yielded a current stability of ±0.4% and ±0.3%, respectively. Investigations in the frequency domain revealed the for field emission typical 1/f-noise. By operating in the saturation region (p-type sample) or using an emission current regulation (metallized sample) the noise level was reduced by at least 20 dB. Finally, the p-type sample was illuminated by a light emitting diode to increase and modulate the emission current in the saturation region. The emission current was increased by a factor of 3.7 to 145 nA. With this configuration we emulated an unstable emission behavior and evaluated the performance of our emission current regulation circuit. KW - field emission KW - field emitter array KW - silicon tip KW - current fluctuation KW - current stability KW - field emission noise Y1 - 2018 U6 - https://doi.org/10.1109/IVNC.2018.8520127 PB - IEEE ER - TY - CHAP A1 - Ławrowski, Robert Damian A1 - Hausladen, Matthias A1 - Schreiner, Rupert T1 - Individually Addressable Fully Integrated Field Emission Electron Source Fabricated by Laser Micromachining of Silicon T2 - 33rd International Vacuum Nanoelectronics Conference (IVNC): 6-10 July 2020, Lyon N2 - A cathode with individually addressable Si tips allows the observation of the activation procedure and emission behaviour of each field emission emitter at any time of the measurement. The cathode consists of an array of 2x2 conically shaped emitter structures, which were fabricated by laser micromachining and wet etching of a Si substrate bonded on a glass carrier. Using the same process, a Si extractions grid was fabricated and mounted onto the emitter. Integral field emission measurements were performed in a diode configuration in a vacuum chamber at pressures of about 10- 9 mbar. The emitters show an onset voltage between 200 V and 300 V. The emission current for each emitter on the cathode was regulated to a given value (1.0 μA, 2.5μA, 5.0μA) by an external regulating circuit and was recorded individually during the measurement. With such approach, the relation between the emission behaviour and the geometry of emitters can be studied in detail. In addition, the current stabilization of each emitters of an array can be investigated, which led to a current stability of better than 0.5%. Y1 - 2020 SN - 978-1-7281-9454-7 U6 - https://doi.org/10.1109/IVNC49440.2020.9203470 SP - 1 EP - 2 PB - IEEE ER - TY - CHAP A1 - Schels, Andreas A1 - Herdl, Florian A1 - Hausladen, Matthias A1 - Wohlfartsstätter, Dominik A1 - Bachmann, Michael A1 - Edler, Simon A1 - Düsberg, Felix A1 - Pahlke, Andreas A1 - Buchner, Philipp A1 - Schreiner, Rupert A1 - Hansch, Walter T1 - Beta Factor Mapping of Individual Emitting Tips During Integral Operation of Field Emission Arrays T2 - 2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA N2 - Emission uniformity mappings of field emitter arrays provide important insight into degradation mechanisms, but are often laborious, non-integral, costly, or not quantifiable. Here, a low-cost Raspberry Pi HQ camera is used as an extraction anode to quantify the emission distribution in field emitter arrays. A verification measurement using controlled SEM electron beams proves, that current-voltage characteristics of individual emission sites can be determined by combining the integral electrical data with the image data. The characteristics are used to quantify the field enhancement factors of an 30x30 silicon field emitter array during integral operation. Comparison of the field enhancement factor distributions before and after a one-hour constant current operation at 1 µA shows an increase from 50 actively emitting tips before to 156 after the measurement. It is shown, that the distribution of field enhancement factors shifts towards lower values, due to the increasing degradation for high field enhancement tips, especially above 1500. KW - field emission KW - field emission imaging KW - field emission distribution KW - field enhancement factor KW - CMOS imaging KW - beta factor Y1 - 2023 SN - 979-8-3503-0143-4 U6 - https://doi.org/10.1109/IVNC57695.2023.10188957 SP - 224 EP - 226 PB - IEEE ER - TY - CHAP A1 - Hausladen, Matthias A1 - Buchner, Philipp A1 - Schels, Andreas A1 - Edler, Simon A1 - Bachmann, Michael A1 - Schreiner, Rupert T1 - An Integrated Field Emission Electron Source on a Chip Fabricated by Laser-Micromachining and Mems Technology T2 - 2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA N2 - A silicon field emission electron source consisting of a cathode and a grid electrode has been fabricated by laser micromachining. The cathode features 21×21 tips on an area of 4×4 mm 2 , With a self-aligning MEMS technology for the aperture grid, a high electron transmission (99 %) was achieved. Onset voltages of 50…70 V were observed for an emission current of 1 nA. A stable emission current of 1 mA ± 1.3 % at an extraction voltage of 250 V was observed during a 30-min operation. KW - Apertures KW - Field Emission KW - Field Emission Array KW - Ions KW - Laser-Micromachining KW - Lasers KW - Micromechanical devices KW - Silicon KW - Silicon Field Emission Array KW - Steady-state KW - Vacuum systems Y1 - 2023 SN - 979-8-3503-0143-4 U6 - https://doi.org/10.1109/IVNC57695.2023.10189001 SP - 115 EP - 116 PB - IEEE ER - TY - CHAP A1 - Buchner, Philipp A1 - Hausladen, Matthias A1 - Schels, Andreas A1 - Herdl, Florian A1 - Edler, Simon A1 - Bachmann, Michael A1 - Schreiner, Rupert T1 - An Integrated Silicon Nanowire Field Emission Electron Source on a Chip with High Electron Transmission T2 - 2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA N2 - Silicon nanowire field emission arrays (50 × 50 pillars) were fabricated on a silicon glass hybrid wafer. The glass acts both as the support for the whole structure and insulator between cathode and extraction grid. The extraction grid matches the emitter structures and is optically aligned and adhered to the emitter chip by a vacuum compatible epoxide adhesive. These chips exhibit an emission current of about 600 μA at an extraction voltage of 300 V. The electron transmission through the grid is above 80 %. 58-hour longtime measurements were conducted showing low degradation of the emission current and high stability of electron transmission. KW - Semiconductor device measurement KW - Stimulated emission KW - Optical device fabrication KW - Glass KW - Power system stability KW - Insulators KW - Electron optics Y1 - 2023 SN - 979-8-3503-0143-4 U6 - https://doi.org/10.1109/IVNC57695.2023.10188878 SP - 6 EP - 8 PB - IEEE ER - TY - CHAP A1 - Hausladen, Matthias A1 - Schels, Andreas A1 - Buchner, Philipp A1 - Bartl, Mathias A1 - Asgharzade, Ali A1 - Edler, Simon A1 - Wohlfartsstätter, Dominik A1 - Bachmann, Michael A1 - Schreiner, Rupert T1 - Improved Method for Determining the Distribution of FEA Currents by Optical CMOS Sensors T2 - 37th International Vacuum Nanoelectronics Conference (IVNC), 15-19 July 2024, Brno, Czech Republic N2 - CMOS image sensors are utilized to determine the time- and spatially-resolved distribution of the electron emission of silicon field emission arrays. During initial experiments, rather low field emission currents already visibly damaged the sensor surface, altering the system accuracy over the measurement time. Therefore, we coated the sensor surface with copper for protection. In contrast to the original insulating surface, the Cu coating provides a conductive surface for incident electrons and improves heat dissipation in addition. This prevents localized surface charges and surface damages which stabilize the system accuracy. Y1 - 2024 U6 - https://doi.org/10.1109/IVNC63480.2024.10652543 SP - 1 EP - 2 PB - IEEE ER - TY - CHAP A1 - Buchner, Philipp A1 - Hausladen, Matthias A1 - Bartl, Mathias A1 - Schreiner, Rupert T1 - Elektronenquellen basierend auf Feldemission aus Silizium T2 - Tagungsband zum 4. Symposium Elektronik und Systemintegration ESI: 17. April 2024, Hochschule Landshut N2 - Der Beitrag gibt einen Überblick über zwei typische Bauformen für Elektronenquellen auf der Basis von Feldemission aus Silizium. Des Weiteren wird eine typische Trioden-Beschaltung solcher Elektronenquellen für hohe Elektronentransmission vorgestellt und dabei auf ihre Leistungsfähigkeit eingegangen. Y1 - 2024 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:860-opus4-4212 SN - 978-3-9818439-9-6 SP - 46 EP - 53 PB - Hochschule für Angewandte Wissenschaften Landshut CY - Landshut ER - TY - CHAP A1 - Bartl, Mathias A1 - Hausladen, Matthias A1 - Asgharzade, Ali A1 - Buchner, Philipp A1 - Krysztof, Michal A1 - Knápek, Alexandr A1 - Bachmann, Michael A1 - Schreiner, Rupert T1 - Experimental method for investigation of the emission pattern characteristics of individual field emission tips using a CMOS image sensor T2 - 38th International Vacuum Nanoelectronics Conference (IVNC) N2 - The emission pattern characteristics of individual silicon field emission tips were investigated using a CMOS image sensor. The quality of the image was improved by spatial and temporal averaging, so that individual emission centers could be identified and their temporal changes investigated. By mapping the emission current onto the image, the distribution of the current density on the image sensor could be calculated. KW - CMOS image sensors KW - Silicon KW - Current density KW - Nanoelectronics Y1 - 2025 U6 - https://doi.org/10.1109/IVNC65669.2025.11121040 PB - IEEE ER - TY - CHAP A1 - Baranowski, Kamil A1 - Zychla, Michał A1 - Krysztof, Michał A1 - Żółtowski, Michał A1 - Hausladen, Matthias A1 - Schreiner, Rupert A1 - Knápek, Aleksandr T1 - Experimenal method for studying electron beams in gaseous environments using a CMOS image sensor T2 - 38th International Vacuum Nanoelectronics Conference (IVNC) N2 - Detecting and analyzing electron beams in atmospheric conditions remains a significant challenge due to scattering and absorption of electrons by gas molecules. In this work, a novel approach using a CMOS image sensor for real-time electron beam detection after its transmission through air is presented. The setup enables visualization of beam divergence, emission profiles, and dynamic behavior under atmospheric pressure. Presented results demonstrate the potential of CMOS image sensor for electron beam analysis in gaseous environment. Y1 - 2025 SN - 979-8-3315-3705-0 U6 - https://doi.org/10.1109/IVNC65669.2025.11120851 PB - IEEE ER - TY - CHAP A1 - Allaham, Mohammad M. A1 - Burda, Daniel A1 - Knápek, Alexandr A1 - Krysztof, Michał A1 - Baranowski, Kamil A1 - Hausladen, Matthias A1 - Schreiner, Rupert T1 - Testing the performance of tungsten-graphite cathodes as MEMS Electron microscope electron source T2 - 38th International Vacuum Nanoelectronics Conference (IVNC) N2 - This work presents preliminary results of the performance testing of exfoliated graphene layers deposited on the nanotip of a tungsten field emission cathode. The obtained tungsten-graphite cathodes were then operated in a 3D-printed MEMS electron microscope testing model for later applications. The results were promising, where a maximum emission current of 50.2 μA was obtained with an extraction voltage of 1 kV and anode voltage of 3 kV. Y1 - 2025 U6 - https://doi.org/10.1109/IVNC65669.2025.11121041 PB - IEEE ER - TY - CHAP A1 - Asgharzade, Ali A1 - Bartl, Mathias A1 - Hausladen, Matthias A1 - Chen, Yang A1 - Buchner, Philipp A1 - Edler, Simon A1 - Bachmann, Michael A1 - She, Juncong A1 - Schreiner, Rupert T1 - Investigation on the influence of internal voltage drops on the emission behavior of silicon field emission arrays using CMOS image sensor T2 - 38th International Vacuum Nanoelectronics Conference (IVNC) N2 - In this paper we report on an improved measurement and analysis method for determining the emission current distribution of field emitter arrays with CMOS sensors. It can also be used for field emission arrays where not all surfaces of the emitters are at the same electrical potential (e.g. for p-doped Si tips, where a strong current saturation occurs). To demonstrate the functionality of this method, a n-doped field emission array was measured using a variable external series resistance. Brightness variations in emission spots were analyzed to re-calculate the known series resistances for comparison. The re-calculated value is in good agreement with the actual value of the resistance. This method offers a quantitative approach to assess internal voltage drop effects on field emission using optical readout KW - field emission imaging KW - field emission KW - CMOS sensor Y1 - 2025 U6 - https://doi.org/10.1109/IVNC65669.2025.11120937 PB - IEEE ER - TY - CHAP A1 - Barik, Ranjan Kumar A1 - Rawat, Vikram Singh A1 - Manna, Subhrajit A1 - Bandyopadhyay, Ayan Kumar A1 - Hausladen, Matthias A1 - Asgharzade, Ali A1 - Schreiner, Rupert T1 - On Chip Electron Gun Design Using Silicon Tip Field Emitter Array T2 - 2025 IEEE Microwaves, Antennas, and Propagation Conference (MAPCON), 14-18. Dezember 2025, Kochi, India N2 - Silicon based silicon tip array emitter has developed at OTH Regensburg, Germany. This array emitter is the basis for development of a novel electron gun. This field emitter electron sources were fabricated using laser-micromachining technique followed by MEMS technology. In this work, the design and development of electron gun using complete silicon structure is reported. The goal of this work is to develop electron gun using less effort, easy and hassle free technique. Y1 - 2025 SN - 979-8-3315-3722-7 U6 - https://doi.org/10.1109/MAPCON65020.2025.11426578 PB - IEEE ER -