TY - CHAP A1 - Declerq, Michel A1 - Clément, F. A1 - Schubert, Martin J. W. A1 - Harb, Adnan A1 - Dutoit, Michel T1 - Design and Optimization of High-Voltage CMOS Devices Compatible wih a Standard 5V CMOS Technology T2 - Proceedings of IEEE Custom Integrated Circuits Conference, May 9-12 1993, San Diego, CA, USA N2 - High-voltage n- and p-MOSFETs fully compatible with a standard 5 V CMOS technology have been designed, optimized, and fabricated. No process changes are required. By modifying the logical equations generating one of the physical masks from the design masks, a p-type buffer region for the high-voltage p-MOS was easily implemented. This modification does not affect the low-voltage part of the circuits. These high-voltage devices have been used successfully as output drivers in semicustom arrays, and as building blocks for custom low- to high-voltage output interfaces. Aspects of reliability, device protection, and circuit design techniques are addressed. Y1 - 1993 SN - 0-7803-0826-3 U6 - https://doi.org/10.1109/CICC.1993.590766 SP - 24.6.1 EP - 24.6.4 ER -