TY - JOUR A1 - Mauerer, Wolfgang A1 - Rexhepaj, Tanja A1 - Monkman, Gareth J. A1 - Sindersberger, Dirk A1 - Diermeier, Andreas A1 - Neidhart, Thomas A1 - Wolfrum, Dominik A1 - Sterner, Michael A1 - Heberl, Michael A1 - Nusko, Robert A1 - Maier, Georg A1 - Nagl, Klaus A1 - Reuter, Monika A1 - Hofrichter, Andreas A1 - Lex, Thomas A1 - Lesch, Florian A1 - Kieninger, Bärbel A1 - Szalo, Alexander Eduard A1 - Zehner, Alexander A1 - Palm, Christoph A1 - Joblin, Mitchell A1 - Apel, Sven A1 - Ramsauer, Ralf A1 - Lohmann, Daniel A1 - Westner, Markus A1 - Strasser, Artur A1 - Munndi, Maximilian A1 - Ebner, Lena A1 - Elsner, Michael A1 - Weiß, Nils A1 - Segerer, Matthias A1 - Hackenberg, Rudolf A1 - Steger, Sebastian A1 - Schmailzl, Anton A1 - Dostalek, Michael A1 - Armbruster, Dominik A1 - Koch, Fabian A1 - Hierl, Stefan A1 - Thumann, Philipp A1 - Swidergal, Krzysztof A1 - Wagner, Marcus A1 - Briem, Ulrich A1 - Diermeier, Andreas A1 - Spreitzer, Stefan A1 - Beiderbeck, Sabrina A1 - Hook, Christian A1 - Zobel, Martin A1 - Weber, Tim A1 - Groß, Simon A1 - Penzkofer, Rainer A1 - Dendorfer, Sebastian A1 - Schillitz, Ingo A1 - Bauer, Thomas A1 - Rudolph, Clarissa A1 - Schmidt, Katja A1 - Liebetruth, Thomas A1 - Hamer, Markus A1 - Haug, Sonja A1 - Vernim, Matthias A1 - Weber, Karsten A1 - Saßmannshausen, Sean Patrick A1 - Books, Sebastian A1 - Neuleitner, Nikolaus A1 - Rechenauer, Christian A1 - Steffens, Oliver A1 - Kusterle, Wolfgang A1 - Gömmel, Roland A1 - Wellnitz, Felix A1 - Stierstorfer, Johannes A1 - Stadler, Dominik A1 - Hofmann, Matthias J. A1 - Motschmann, Hubert A1 - Shamonin (Chamonine), Mikhail A1 - Bleicher, Veronika A1 - Fischer, Sebastian A1 - Hackenberg, Rudolf A1 - Horn, Anton A1 - Kawasch, Raphael A1 - Petzenhauser, Michael A1 - Probst, Tobias A1 - Udalzow, Anton A1 - Dams, Florian A1 - Schreiner, Rupert A1 - Langer, Christoph A1 - Prommesberger, Christian A1 - Ławrowski, Robert Damian ED - Baier, Wolfgang T1 - Forschungsbericht 2016 T3 - Forschungsberichte der OTH Regensburg - 2016 Y1 - 2016 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:898-opus4-13840 CY - Regensburg ER - TY - JOUR A1 - Langer, Christoph A1 - Prommesberger, Christian A1 - Ławrowski, Robert Damian A1 - Schreiner, Rupert A1 - Serbun, Pavel A1 - Müller, Günter A1 - Düsberg, Felix A1 - Hofmann, Martin A1 - Bachmann, Michael A1 - Pahlke, Andreas T1 - Field emission properties of p-type black silicon on pillar structures JF - Journal of Vacuum Science & Technology B N2 - Arrays of black silicon field emission pillar structures were fabricated on p-type silicon substrates. Two types of samples with the same number of pillars (arrays of 10 × 10) but different pillar heights (8 and 20 μm) were prepared as well as a black silicon reference sample without pillars. The field emission properties of these cathodes were investigated both by means of integral current-voltage measurements and by field emission scanning microscopy. Samples with a pillar height of 20 μm revealed onset fields as low as 6.4 V/μm, field enhancement factors up to 800, and emission currents up to 8 μA at an applied field of 20 V/μm. Due to the p-type material, a saturation of the emission current for fields above 11 V/μm was observed. This saturation leads to a stable operation with a current fluctuation of less than ±8%. It was found that samples with a pillar height of 20 μm showed improved emission characteristics compared to samples with a pillar height of 8 μm or without pillars. The voltage maps revealed an increased emission homogeneity after a “burn-in” sequence of the sample. The current map showed that a few of the pillars dominate the emission. Integral current stability measurements were performed under different vacuum pressures, in order to investigate altered emission behavior and a potential degradation of the emitters. At pressures above 10−6 mbar, the sample starts to degrade irreversibly. Nevertheless, even after a harsh treatment over 30 min at 5 × 10−5 mbar and at an applied field of 23 V/μm, the cathode was still operating, and did not fail during further operation over 20 h at 5 × 10−8 mbar and at an applied field of 28 V/μm. Y1 - 2016 U6 - https://doi.org/10.1116/1.4943919 VL - 34 IS - 2 ER - TY - CHAP A1 - Bachmann, Michael A1 - Dams, Florian A1 - Düsberg, Felix A1 - Hofmann, Martin A1 - Pahlke, Andreas A1 - Langer, Christoph A1 - Ławrowski, Robert Damian A1 - Prommesberger, Christian A1 - Schreiner, Rupert T1 - Extraction of the characteristics of limiting elements from field emission measurement data T2 - 29th International Vacuum Nanoelectronics Conference (IVNC), 2016, 11-15 July, Vancouver, BC, Canada N2 - In this contribution we will present an algorithm to extract the characteristics of non-Fowler-Nordheim (FN) circuit elements from saturation limited field emission (FE) measurement data. The method for calculating the voltage drop on limiting circuit elements is based on circuit theory as well as Newton's method. Since no assumption on the limiting circuit is made, this method is applicable to any FE data showing saturation. To be able to determine the significance of any parameter output, the uncertainties of data and extracted parameters are fully taken into account throughout the algorithm. External serial resistors and a limiting p-doped substrate are analyzed, where the latter shows a diode-like behavior. Y1 - 2016 U6 - https://doi.org/10.1109/IVNC.2016.7551474 SN - 2380-6311 SP - 81 EP - 82 PB - IEEE ER - TY - CHAP A1 - Serbun, Pavel A1 - Porshyn, Vitali A1 - Müller, Günter A1 - Mingels, Stephan A1 - Lützenkirchen-Hecht, Dirk A1 - Bachmann, Michael A1 - Düsberg, Felix A1 - Dams, Florian A1 - Hofmann, Martin A1 - Pahlke, Andreas A1 - Prommesberger, Christian A1 - Langer, Christoph A1 - Ławrowski, Robert Damian A1 - Schreiner, Rupert T1 - Field emission behavior of Au-tip-coated p-type Si pillar structures T2 - 29th International Vacuum Nanoelectronics Conference (IVNC), 2016, 11-15 July, Vancouver, BC, Canada N2 - Precisely aligned high-aspect-ratio (HAR) silicon tip arrays were fabricated using enhanced reactive ion etching with an inductively-coupled-plasma followed by a sharpening oxidation. A gold thin film was then sputtered only on the tips of the HAR structures. Field-emission (FE) properties from Au-coated HAR p-Si tip array cathodes have been systematically investigated by means of field emission scanning microscopy (FESM). A rather high efficiency of the HAR Si structures (71% at 550 V), but limited homogeneous FE with currents of 1-600 nA might be correlated with the varying geometry of the tips and the presence of oxides. I-V measurements of single Au-coated HAR emitters revealed activation effects and the saturation current region at 3 nA. An increase of the saturation current by 4 orders of magnitude was observed during 20 hours of conditioning at constant voltage, which finally resulted in nearly reproducible FN curves with a ß-factor of 473. An excellent stability of the emission current of less than 1 % was obtained during the additional long-time conditioning at constant voltage. Optical switching under halogen lamp illumination resulted in at least 2 times higher saturation currents and showed a linear dependence of the FE current on the light color temperature. KW - field emission KW - p-type Si-pillar array KW - surface oxide effects KW - photoemission Y1 - 2016 U6 - https://doi.org/10.1109/IVNC.2016.7551516 SN - 2380-6311 SP - 181 EP - 182 PB - IEEE ER -