TY - CHAP A1 - Langer, Christoph A1 - Prommesberger, Christian A1 - Dams, Florian A1 - Serbun, Pavel A1 - Bornmann, Benjamin A1 - Mingels, Stephan A1 - Müller, Günter A1 - Schreiner, Rupert T1 - Si-Feldemissionskathoden für Anwendungen in miniaturisierten Ionisationsvakuumsensoren T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft e.V. (DPG), Regensburg, 10. - 15. März 2013 N2 - Feldemissionselektronenquellen sind aufgrund ihrer prinzipiellen Vorteile gegenüber Glühkathoden bereits seit längerer Zeit Gegenstand der Forschung und werden bisher nur in einigen Spezialanwendungen erfolgreich eingesetzt. Hierbei werden Einzelspitzen mit Spannungen im kV-Bereich und Strömen im nA-Bereich betrieben. Dagegen werden für miniaturisierte Sensorsysteme eher Spannungen von ca. 100 V und Ströme von ca. 1 mA benötigt. Dazu wurden bisher meist Feldemissionskathoden mit CNTs vorgeschlagen, welche für Anwendungen in der Halbleiterindustrie aufgrund des Kohlenstoffanteils nicht erwünscht sind. Ziel unserer Arbeit ist es, Si-basierte Elektronenquellen zu realisieren, die mit anderen miniaturisierten Vakuumsensoren auf einem Chip integrierbar sind. Mithilfe eines optimierten Herstellungsprozesses konnten wir p-Si-Spitzenarrays mit Spitzenradien von wenigen nm realisieren [1]. Messungen an diesen Strukturen zeigen ein sehr homogenes Emissionsverhalten, das vor allem im Sättigungsbereich bei Emissionsströmen von ca. 10 nA pro Spitze zeitlich stabil (Schwankungen < 5 %) und optisch schaltbar (Faktor > 2.5) ist [2]. Y1 - 2013 UR - https://www.researchgate.net/publication/281373011_Si-Feldemissionskathoden_fur_Anwendungen_in_miniaturisierten_Ionisationsvakuumsensoren PB - Deutsche Physikalische Gesellschaft e.V. ER - TY - CHAP A1 - Prommesberger, Christian A1 - Dams, Florian A1 - Langer, Christoph A1 - Schreiner, Rupert A1 - Rutkowski, S. A1 - Bornmann, Benjamin A1 - Müller, Günter T1 - Simulation of electron trajectories of a field emission electron source in triode configuration by using finite element methods T2 - 24th International Vacuum Nanoelectronics Conference (IVNC), 2011 : 18 - 22 July 2011, Historische Stadthalle Wuppertal, Germany N2 - The finite element simulation program COMSOL Multiphysics® was used to simulate the emission efficiency of a silicon tip electron source in triode configuration for different geometries and electrode potentials. The simulation predicts a maximum emission efficiency of 84% for an optimized structure. In a second simulation a gate electrode was concentrically arranged above a single CNT column. Here, the efficiency was simulated as a function of gate hole geometry, electrode potentials and distances between the electrodes. The simulation shows that a conical shape of the gate hole results in an efficiency up to nearly 100%. KW - carbon nanotubes KW - electron field emission KW - electron source simulation KW - finite element analysis KW - simulation of electron trajectories KW - triodes Y1 - 2011 UR - https://ieeexplore.ieee.org/document/6004589 SN - 978-3-00-035081-8 SN - 978-1-4577-1243-2 SN - 2380-6311 SN - 2164-2370 SP - 144 EP - 145 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Bachmann, Michael A1 - Dams, Florian A1 - Düsberg, F. A1 - Hofmann, Martin A1 - Pahlke, Andreas A1 - Langer, Christoph A1 - Ławrowski, Robert Damian A1 - Prommesberger, Christian A1 - Schreiner, Rupert T1 - Stability investigation of high aspect ratio n-type silicon field emitter arrays T2 - 2015 28th International Vacuum Nanoelectronics Conference (IVNC), 13-17 July 2015, Guangzhou, China N2 - Electron sources based on silicon field emitter arrays, produced in processes based on semiconductor technology, are good candidates for a miniaturized X-ray source. A key parameter for this application is the stability of the X-ray photon flux and, thus, the emission current. In the present work we have investigated the influence of the residual gas pressure and a resistor in series on the emission stability of a high aspect ratio n-type silicon emitter array with hybrid extraction electrode. An increase of current fluctuations was found for pressures above 10-6 mbar. High resistances in series to the emitter array alter the emission characteristics, but greatly suppress spikes in the emission current and improve its stability. This, however, strongly depends on the bias point. The field enhancement factor is not affected by the resistance. In a long term measurement the emission current was found to be constant after an initial phase of degradation. KW - Current measurement KW - emission current stability KW - field emitter array KW - Field emitter arrays KW - RESISTANCE KW - Resistors KW - semiconductor field emission KW - silicon KW - silicon tips KW - Stability analysis KW - Thermal stability KW - XRF spectroscopy Y1 - 2015 U6 - https://doi.org/10.1109/IVNC.2015.7225584 SP - 204 EP - 205 PB - IEEE ER - TY - CHAP A1 - Serbun, Pavel A1 - Navitski, Aliaksandr A1 - Müller, Günter A1 - Schreiner, Rupert A1 - Prommesberger, Christian A1 - Langer, Christoph A1 - Dams, Florian T1 - Scaling of the field emission current from B-doped Si-tip arrays T2 - 25th International Vacuum Nanoelectronics Conference (IVNC) ; Jeju, Korea (South), 09.07.2012 - 13.07.2012 N2 - We have fabricated a test chip with various hexagonal arrays of B-doped Si tips (height ~ 3 μm, apex radius <; 30 nm, number 1-4447, resistivity 4 Ωcm, 100 orientation) in triangular arrangement (pitch 10 μm, density 1.16×10 6 cm -2 ) in order to systematically investigate the field emission current scaling with the number N of tips. Regulated voltage scans for 1 nA revealed rather efficient emission from nearly all tips of the arrays at an average field of 15 V/μm. The expected current plateau was always obtained at fields around 20 V/μm, but its width strongly increased with N. In this carrier depletion range, the single tip provided a much higher stability (<; 5%) of the current (2-3 nA) than at lower (>; 50 %) and higher currents (>; 30%). Integral current measurements of the hexagonal arrays resulted in a statistically improved current stability (<; 1%) but only a weak increase of the total current with N 0.28 yet. These results will be discussed with respect to the remaining inhomogeneity of the tips. KW - Anodes KW - B-doped KW - boron KW - Current measurement KW - current scaling KW - electron field emission KW - elemental semiconductors KW - field emitter arrays KW - Iron KW - Nonhomogeneous media KW - silicon KW - Voltage control Y1 - 2012 SN - 978-1-4673-1984-3 SN - 978-1-4673-1983-6 SN - 978-1-4673-1982-9 U6 - https://doi.org/10.1109/IVNC.2012.6316965 SN - 2380-6311 SN - 2164-2370 SP - 1 EP - 2 PB - IEEE CY - Piscataway, N.J. ER - TY - JOUR A1 - Kleshch, Victor I. A1 - Serbun, Pavel A1 - Lützenkirchen-Hecht, Dirk A1 - Orekhov, Anton A1 - Ivanov, Victor E. A1 - Prommesberger, Christian A1 - Langer, Christoph A1 - Schreiner, Rupert A1 - Obraztsov, Alexander N. T1 - A Comparative Study of Field Emission from Pristine, Ion-treated and Tungsten Nanoparticle-decorated p-type Silicon Tips JF - Physica Status Solidi B N2 - The field electron emission characteristics of individual tips of a silicon field emitter array are analyzed. The array of conical‐shaped tips is fabricated on a p‐type silicon wafer by using reactive ion etching and sharpening oxidation. The tips are decorated with single tungsten nanoparticles at their apexes. Furthermore, the focused ion beam is also used to increase surface conductivity of some of the tips. Comparative measurements of field emission are performed by using the scanning anode probe field emission microscopy technique. All types of tips demonstrated emission activation consisting of a sudden current increase at a certain value of the applied voltage. Compared to the pristine tips, a noticeable reduction of the saturation effect in the current–voltage characteristics and a smaller light sensitivity for the decorated tips is found. For ion‐treated tips, saturation effects and light sensitivity are completely suppressed. Scanning electron microscopy observations reveal the formation of single nanoscale protrusions extending from the metal particles and from the apexes of bare ion‐treated tips after exposure under strong electric fields during the field emission measurements. The influence of protrusions growth on characteristics of silicon field emitter arrays is discussed. Y1 - 2019 U6 - https://doi.org/10.1002/pssb.201800646 VL - 256 IS - 9 PB - Wiley ER - TY - CHAP A1 - Serbun, Pavel A1 - Porshyn, Vitali A1 - Müller, Günter A1 - Lützenkirchen-Hecht, Dirk A1 - Prommesberger, Christian A1 - Langer, Christoph A1 - Ławrowski, Robert Damian A1 - Schreiner, Rupert T1 - Field emission behavior of single n- and p-type black Si pillar structures T2 - International Vacuum Nanoelectronics Conference (IVNC), 31st, 2018, Kyoto, Japan N2 - We have investigated the properties of single n- and p-type black silicon (b-Si) pillars with a height of 20 μ m under strong electric field and halogen lamp or laser illumination. For both type of b-Si pillar structures, I-V measurements revealed strong activation effects, which consisted in sudden current increases during the first up/down voltage sweeps. The maximum reproducible emission current from a single n-type b-Si pillar structure was about 15 μ A. A pronounced saturation region at 240 nA was observed for a single p-type b-Si pillar. The current fluctuation over time showed a standard deviation of 28% and 2.5% for n- and p-type single b-Si pillar structures, respectively. Optical switching under halogen lamp illumination resulted in at least 3 times higher saturation currents and showed a linear dependence of the FE current on the laser power. KW - field emission KW - black silicon KW - photoemission Y1 - 2018 U6 - https://doi.org/10.1109/IVNC.2018.8520292 PB - IEEE ER - TY - JOUR A1 - Mingels, Stephan A1 - Porshyn, Vitali A1 - Prommesberger, Christian A1 - Langer, Christoph A1 - Schreiner, Rupert A1 - Lützenkirchen-Hecht, Dirk A1 - Müller, Günter T1 - Photosensitivity of p-type black Si field emitter arrays JF - Journal of Applied Physics N2 - We have investigated the properties of black Si field emitter arrays under strong electric fields and laser illumination. A low onset field of 1.8 MV/m for an emission current of 1 nA was obtained. A pronounced saturation region of the dark and photo-enhanced current was observed, which provided a short-term stability of 0.1% at 0.4 μA and 0.7% at 1.0 μA, respectively. As maximum value for the photosensitivity, an on-off current switching ratio of 43 reaching about 13 μA was achieved at a laser power of 15 mW. Electron spectra in the dark and under laser illumination are presented, showing a current and light-sensitive voltage drop across the emitters as well as hints for hot electron emission. Y1 - 2016 U6 - https://doi.org/10.1063/1.4948328 VL - 119 IS - 16 ER - TY - CHAP A1 - Serbun, Pavel A1 - Porshyn, Vitali A1 - Müller, Günter A1 - Mingels, Stephan A1 - Lützenkirchen-Hecht, Dirk A1 - Bachmann, Michael A1 - Düsberg, Felix A1 - Dams, Florian A1 - Hofmann, Martin A1 - Pahlke, Andreas A1 - Prommesberger, Christian A1 - Langer, Christoph A1 - Ławrowski, Robert Damian A1 - Schreiner, Rupert T1 - Field emission behavior of Au-tip-coated p-type Si pillar structures T2 - 29th International Vacuum Nanoelectronics Conference (IVNC), 2016, 11-15 July, Vancouver, BC, Canada N2 - Precisely aligned high-aspect-ratio (HAR) silicon tip arrays were fabricated using enhanced reactive ion etching with an inductively-coupled-plasma followed by a sharpening oxidation. A gold thin film was then sputtered only on the tips of the HAR structures. Field-emission (FE) properties from Au-coated HAR p-Si tip array cathodes have been systematically investigated by means of field emission scanning microscopy (FESM). A rather high efficiency of the HAR Si structures (71% at 550 V), but limited homogeneous FE with currents of 1-600 nA might be correlated with the varying geometry of the tips and the presence of oxides. I-V measurements of single Au-coated HAR emitters revealed activation effects and the saturation current region at 3 nA. An increase of the saturation current by 4 orders of magnitude was observed during 20 hours of conditioning at constant voltage, which finally resulted in nearly reproducible FN curves with a ß-factor of 473. An excellent stability of the emission current of less than 1 % was obtained during the additional long-time conditioning at constant voltage. Optical switching under halogen lamp illumination resulted in at least 2 times higher saturation currents and showed a linear dependence of the FE current on the light color temperature. KW - field emission KW - p-type Si-pillar array KW - surface oxide effects KW - photoemission Y1 - 2016 U6 - https://doi.org/10.1109/IVNC.2016.7551516 SN - 2380-6311 SP - 181 EP - 182 PB - IEEE ER - TY - CHAP A1 - Serbun, Pavel A1 - Porshyn, Vitali A1 - Lützenkirchen-Hecht, Dirk A1 - Prommesberger, Christian A1 - Langer, Christoph A1 - Ławrowski, Robert Damian A1 - Schreiner, Rupert T1 - Photosensitivity of single silicon high-aspect-ratio tips with different doping levels T2 - International Vacuum Nanoelectronics Conference (IVNC), 31st, 2018, Kyoto, Japan N2 - Photosensitivity of single lightly p-doped, highly p-doped, with an integrated p/n junction and intrinsic high-aspect-ratio (HAR) silicon tips was investigated in an ultra-high vacuum environment. The current-voltage characteristics (I-V) of the lightly doped p-type HAR tips showed a characteristic current saturation at around 10-12 nA, whereas the HAR Si tips with p/n junction showed similar saturation phenomena, however, at much smaller current values starting at ~20-30 pA. Optical switching under a halogen lamp illumination resulted in at least 2-4 times higher saturation currents and showed a linear dependence between the illumination power and the FE current, for both types of structures. In case of the highly p-doped HAR tips optical current switching effects, i. e. current saturation, were observed at rather low current levels 1-2 pA. Intrinsic HAR Si-tips showed relative unstable field emission behavior without a clear evidence of the photosensitivity. KW - field emission KW - Si p/n junction KW - p-type Si KW - photosensitivity Y1 - 2018 U6 - https://doi.org/10.1109/IVNC.2018.8520288 PB - IEEE ER - TY - CHAP A1 - Schreiner, Rupert A1 - Langer, Christoph A1 - Prommesberger, Christian A1 - Ławrowski, Robert Damian A1 - Dams, Florian A1 - Bachmann, Michael A1 - Düsberg, F. A1 - Hofmann, Martin A1 - Pahlke, Andreas A1 - Serbun, Pavel A1 - Mingels, Stephan A1 - Müller, Günter T1 - Semiconductor field emission electron sources using a modular system concept for application in sensors and x-ray-sources T2 - 2015 28th International Vacuum Nanoelectronics Conference (IVNC), 13-17 July 2015, Guangzhou, China N2 - Semiconductor field emitters are suitable candidates for applications, which require a very stable field emission (FE) current and a high emission uniformity over the entire emission area. By using different materials and geometries, we are able to vary the FE characteristics within a wide range. Each specific application requires its own optimized design for the cathode as well as for the other parts of the FE electron source. To meet as many of these requirements as possible while using only a limited number of different prefabricated components, we established a modular system concept for our FE electron source. This allows the implementation of almost every cathode material. For first characterizations, we used gated p-type Si cathodes with 16 tips. We obtained stable FE currents of 0.4 μA for a grid-potential of 400 V and a gate potential of 100 V. Almost 100% of the electrons are emitted towards the grid-electrode. Parasitic leakage paths, as well as the electron emission towards the gate-electrode can be neglected. Approximately 10% of the electrons are transmitted through the grid and reach the external anode. This is in good agreement with the optical transmission through the grid-mesh. KW - Anodes KW - CATHODES KW - electron sources KW - GEOMETRY KW - Iron KW - Logic gates KW - semiconductor field emission KW - silicon Y1 - 2015 U6 - https://doi.org/10.1109/IVNC.2015.7225572 SP - 178 EP - 179 PB - IEEE ER - TY - CHAP A1 - Ławrowski, Robert Damian A1 - Langer, Christoph A1 - Prommesberger, Christian A1 - Schreiner, Rupert A1 - Mingels, Stephan A1 - Porshyn, Vitali A1 - Serbun, Pavel A1 - Müller, Günter T1 - Field emission from surface textured GaN with buried double-heterostructures T2 - 2015 28th International Vacuum Nanoelectronics Conference (IVNC), 13-17 July 2015, Guangzhou, China N2 - In this contribution we report on field emission (FE) cathodes based on thin-film LED-technology and surface texturing. The FE cathode can be used both as an n-GaN cathode with an electrical contact at the top side metallization as well as a pn-GaN diode contacting only the p-GaN layer at the bottom side of the structure. The local and integral FE properties of the textured surface of the LED structure were investigated. For n-GaN an integral emission current up to 1.0 μA at an electric field of 19 V/μm was achieved. The pn-GaN diode measurements showed an integral current saturation behavior with two orders of magnitude lower FE currents. Regulated voltage scans obtained by FE scanning microscopy revealed a well-distributed emission over the whole cathode area. Measurements under pulsed tunable laser illumination and moderate electric fields indicated charge carrier generation in the buried double-heterostructures at photon energies below 3.5 eV besides normal photoemission above 4.1 eV. KW - CATHODES KW - Current measurement KW - Electric fields KW - field emission KW - Gallium nitride KW - GaN KW - Iron KW - Light emitting diodes KW - photoemission KW - Surface texture Y1 - 2015 U6 - https://doi.org/10.1109/IVNC.2015.7225548 SP - 106 EP - 107 PB - IEEE ER - TY - CHAP A1 - Mingels, Stephan A1 - Porshyn, Vitali A1 - Serbun, Pavel A1 - Lützenkirchen-Hecht, Dirk A1 - Müller, Günter A1 - Prommesberger, Christian A1 - Langer, Christoph A1 - Schreiner, Rupert A1 - Lutzenkirchen-Hecht, Dirk T1 - Photo-enhanced field emission properties of p-doped black Si arrays T2 - 2016 29th International Vacuum Nanoelectronics Conference (IVNC), 11-15 July 2016, Vancouver, BC, Canada N2 - We have carried out systematic investigations of p-type black Si field emitter arrays under laser illumination. As expected the current-voltage characteristic revealed a strong saturation providing a high photosensitivity, which had a maximum on-off ratio of 43 at a maximum current of 13 μA. The saturation current was stable in the dark as well as under illumination with fluctuations <;0.7%. Results from time-resolved measurements of the photo-sensitivity showed a rather fast response but a long decay time. Electron spectra in the dark and under laser illumination revealed the origin of the emission. KW - black Si KW - Decision support systems KW - photo-enhanced field emission Y1 - 2016 U6 - https://doi.org/10.1109/IVNC.2016.7551447 SP - 1 EP - 2 PB - IEEE ER - TY - CHAP A1 - Schreiner, Rupert A1 - Langer, Christoph A1 - Prommesberger, Christian A1 - Mingels, Stephan A1 - Serbun, Pavel A1 - Müller, Günter T1 - Field emission from surface textured extraction facets of GaN light emitting diodes T2 - 26th International Vacuum Nanoelectronics Conference (IVNC), 8-12 July 2013, Roanoke, VA, USA N2 - We report on the field emission properties of GaN LED surfaces. The textured extraction facet acts both as light scattering layer in order to increase the light extraction efficiency of the LED as well as nanostructured cathode surface for the field emission (FE) of electrons. The LED emits blue light with a peak wavelength of around 450 nm. The FE properties were investigated by a scanning microscope. Integral measurements as well as regulated voltage scans for 1 nA FE current over an area of 400 * 400 µm2were used to investigate both overall and local FE properties. A high number of well-distributed emitters with an average field enhancement factor ß of 85 and stable integral emission currents up to 100 µA at an electric field of   80 V/µm (Øanode= 880 µm) were found. Photo-field-emission spectroscopy (PFES) using a tunable pulsed laser revealed an enhanced photo absorption of the InGaN/GaN quantum well structures near the emission wavelength of the LED (<3.5 eV), whereas at high photon energies (>4.1 eV) photoemission from the GaN surface was observed. KW - Gallium nitride KW - Iron KW - Light emitting diodes KW - Cathodes KW - Surface texture KW - Surface waves KW - Photonics Y1 - 2013 U6 - https://doi.org/10.1109/ivnc.2013.6624721 PB - IEEE ER - TY - JOUR A1 - Broser, Christian A1 - Falter, Thomas A1 - Ławrowski, Robert Damian A1 - Altenbuchner, Amelie A1 - Vögele, Daniel A1 - Koss, Claus A1 - Schlamp, Matthias A1 - Dunnweber, Jan A1 - Steffens, Oliver A1 - Heckner, Markus A1 - Jaritz, Sabine A1 - Schiegl, Thomas A1 - Corsten, Sabine A1 - Lauer, Norina A1 - Guertler, Katherine A1 - Koenig, Eric A1 - Haug, Sonja A1 - Huber, Dominik A1 - Birkenmaier, Clemens A1 - Krenkel, Lars A1 - Wagner, Thomas A1 - Justus, Xenia A1 - Saßmannshausen, Sean Patrick A1 - Kleine, Nadine A1 - Weber, Karsten A1 - Braun, Carina N. A1 - Giacoppo, Giuliano A1 - Heinrich, Michael A1 - Just, Tobias A1 - Schreck, Thomas A1 - Schnabl, Andreas A1 - Gilmore, Amador Téran A1 - Roeslin, Samuel A1 - Schmid, Sandra A1 - Wellnitz, Felix A1 - Malz, Sebastian A1 - Maurial, Andreas A1 - Hauser, Florian A1 - Mottok, Jürgen A1 - Klettke, Meike A1 - Scherzinger, Stefanie A1 - Störl, Uta A1 - Heckner, Markus A1 - Bazo, Alexander A1 - Wolff, Christian A1 - Kopper, Andreas A1 - Westner, Markus A1 - Pongratz, Christian A1 - Ehrlich, Ingo A1 - Briem, Ulrich A1 - Hederer, Sebastian A1 - Wagner, Marcus A1 - Schillinger, Moritz A1 - Görlach, Julien A1 - Hierl, Stefan A1 - Siegl, Marco A1 - Langer, Christoph A1 - Hausladen, Matthias A1 - Schreiner, Rupert A1 - Haslbeck, Matthias A1 - Kreuzer, Reinhard A1 - Brückl, Oliver A1 - Dawoud, Belal A1 - Rabl, Hans-Peter A1 - Gamisch, Bernd A1 - Schmidt, Ottfried A1 - Heberl, Michael A1 - Gänsbauer, Bianca A1 - Bick, Werner A1 - Ellermeier, Andreas A1 - Monkman, Gareth J. A1 - Prem, Nina A1 - Sindersberger, Dirk A1 - Tschurtschenthaler, Karl A1 - Aurbach, Maximilian A1 - Dendorfer, Sebastian A1 - Betz, Michael A. A1 - Szecsey, Tamara A1 - Mauerer, Wolfgang A1 - Murr, Florian ED - Baier, Wolfgang T1 - Forschung 2018 T3 - Forschungsberichte der OTH Regensburg - 2018 KW - Forschung KW - Forschungsbericht Y1 - 2018 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:898-opus4-13826 SN - 978-3-9818209-5-9 CY - Regensburg ER - TY - CHAP A1 - Bieker, Johannes A1 - Roustaie, Farough A1 - Schlaak, Helmut F. A1 - Langer, Christoph A1 - Schreiner, Rupert T1 - Field emission characterization of in-situ deposited metallic nanocones T2 - 2017 30th International Vacuum Nanoelectronics Conference (IVNC), 10-14 July 2017, Regensburg, Germany N2 - An in-situ fabrication technique based on ion track etched template electrodeposition of metallic nanocones was used for the production of field emitter cathodes. Gold nanocones with a height of 24 microns, a base diameter between 3 to 4 microns and a tip diameter below 300 nanometers were deposited on a circular electrode with a diameter of 2.5 mm. The integral field emission (FE) measurements of samples with cone densities of 6 · 104 cones/cm2 (sample A) and 1 · 106 cones/cm2 (sample B) yielded in a maximum current of 37.5 μA at an applied field of 12.5 V/μm for sample A and 29.1 μA at 9.4 V/μm for sample B. The stability of emission current was investigated for over 48 hours and no degradation was observed. KW - CATHODES KW - Current measurement KW - FABRICATION KW - field emission KW - ion track template KW - Ions KW - Iron KW - nanocones KW - Vacuum technology KW - Voltage measurement Y1 - 2017 U6 - https://doi.org/10.1109/IVNC.2017.8051571 SP - 120 EP - 121 PB - IEEE ER - TY - CHAP A1 - Ławrowski, Robert Damian A1 - Langer, Christoph A1 - Schreiner, Rupert A1 - Sellmair, Josef T1 - Nano Emitters on Silicon Pillar Structures generated by a Focused Electron Beam Induced Deposition T2 - International Vacuum Nanoelectronics Conference (IVNC), 31st, 2018, Kyoto, Japan N2 - Nano emitters were deposited by focused electron beam induced deposition of Trimethyl-(methylcyclopentadienyl)platinum(IV) on top of silicon pillars. The nano emitters were exactly positioned in the center on the top of up to four pillars of a quadratic arranged array of sixteen pillars with a pitch of 50 μm. Integral field emission measurements were performed in a diode configuration with a 50 μm mica spacer in a vacuum chamber at pressures of about 10 -9 mbar. The Fowler-Nordheim plots show a linear behavior, like expected for an n-type silicon material and a metal needle. The I-V measurement of the most promising sample shows an integral emission current up to 2 μm at a voltage of 600 V (12 MV/m) and an onset voltage for a current of 1 nA of about 300 V. KW - field emission KW - nano emitter KW - focused electron beam induced deposition KW - MeCpPtMe3 Y1 - 2018 U6 - https://doi.org/10.1109/IVNC.2018.8520059 PB - IEEE ER -