TY - CHAP A1 - Bornmann, Benjamin A1 - Mingels, Stephan A1 - Serbun, Pavel A1 - Lützenkirchen-Hecht, Dirk A1 - Müller, Güntner A1 - Prommesberger, Christian A1 - Langer, Christoph A1 - Dams, Florian A1 - Schreiner, Rupert T1 - Photosensitivity of electron field emission from B-doped Si-tip arrays T2 - 25th International Vacuum Nanoelectronics Conference (IVNC) ; Jeju, Korea (South), 09.07.2012 - 13.07.2012 N2 - The electron current from field-emitting B-doped Si-tip arrays under illumination was studied. An improved cathode design with a patch of 271 tips yielded a reproducible cathode current between 0.2-2000 nA in the electric field range of 3.8-6.6 V/μm. The plateau in the Fowler-Nordheim plot shows the actual carrier depletion and leads to a very stable emission at ~1 μA with a current noise of less than 3.3 %. Color-filtered halogen lamp illumination was used to investigate the photo-sensitivity of the saturation current. The intensity-normalized current switching ratio increases nonlinearly with the photon energy. This hints either for secondary generation in the conduction band or deeper valence band excitation. The first is supported by a rough estimation of the quantum efficiency. Further experiments with a tunable laser and electron spectroscopy are planned. KW - boron KW - electron field emission KW - electron spectroscopy KW - elemental semiconductors KW - field emitter arrays KW - halogens KW - lamps KW - lighting KW - p-doped Si tips KW - photosensitivity KW - silicon KW - valence bands Y1 - 2012 SN - 978-1-4673-1984-3 SN - 978-1-4673-1983-6 SN - 978-1-4673-1982-9 U6 - https://doi.org/10.1109/IVNC.2012.6316980 SN - 2380-6311 SN - 2164-2370 SP - 1 EP - 2 PB - IEEE ER -