TY - CHAP A1 - Ilmakunnas, Pekka A1 - Skirbekk, Vegard A1 - van Ours, Jan A1 - Weiss, Matthias ED - Garibaldi, Pietro T1 - Ageing and Productivty T2 - Ageing, Health, and Productivity: The Economics of Increased Life Expectancy KW - Alter KW - Arbeitsproduktivität KW - Gesundheitsausgaben KW - Wirtschaftsentwicklung Y1 - 2009 SP - 135 EP - 219 PB - Oxford University Press CY - Oxford ER - TY - JOUR A1 - Weiss, Matthias T1 - Skill-Biased Technological Change BT - Is there Hope for the Unskilled? JF - Economics Letters N2 - This paper presents a model in which perpetual skill-biased technological change does not lead to ever-increasing wage inequality. The model is consistent with the increase in wage inequality in the 1980s and the subsequent stabilization in the 1990s. KW - Skill-biased technological change KW - Wage inequality KW - Factor substitution Y1 - 2008 U6 - https://doi.org/10.1016/j.econlet.2008.03.022 VL - 100 IS - 3 SP - 439 EP - 441 ER - TY - CHAP A1 - Börsch-Supan, Axel A1 - Düzgün, Ismail A1 - Weiss, Matthias ED - Prager, Jens U. ED - Schleiter (Hrsg.), André T1 - Sinkende Produktivität alternder Belegschaften? BT - Zum Stand der Forschung T2 - Länger leben, arbeiten und sich engagieren. Chancen werteschaffender Beschäftigung bis ins Alter Y1 - 2006 SN - 3892049130 SP - 85 EP - 102 PB - Bertelsmann Stiftung CY - Gütersloh ER - TY - JOUR A1 - Börsch-Supan, Axel A1 - Weiss, Matthias ED - Kruse, Andreas T1 - Erfahrungswissen in der Arbeitswelt JF - Potenziale im Altern. Chancen und Aufgaben für Individuum und Gesellschaft Y1 - 2010 SP - 221 EP - 234 PB - AKA CY - Heidelberg ER - TY - JOUR A1 - Weiss, Matthias ED - Kuhn, Michael ED - Ochsen, Carsten T1 - Absenteeism in Age-Diverse Work Teams JF - Labour Markets and Demographic Change N2 - Age-diverse work teams are being advocated as an important management tool to enhance performance and productively employ older workers. However, this advice is not founded on empirical evidence. There are very few studies that look at the relation between performance and age diversity of work teams. This lack of evidence is mainly due to a lack of available data. Information on performance and worker composition of a productive unit is available almost exclusively on the plant level in matched employer-employee data sets. But on the plant level/age heterogeneity of the workforce does not tell much about age diversity on the level where co-operation/teamwork takes place (work teams, departments, etc.). If all of the older workers work in the administration whereas all the young employees work in the production, the firm's workforce may be highly age-diverse, but work teams and departments are age-homogeneous. This problem notwithstanding, Grund and Westergård-Nielsen (2005) look at the relation between productivity and the standard deviation of workers’ age in a sample of 7,000 Danish firms. They find a hump-shaped relation. Y1 - 2009 U6 - https://doi.org/10.1007/978-3-531-91478-7_3 SP - 40 EP - 57 PB - VS Verlag CY - Wiesbaden ER - TY - JOUR A1 - Weiss, Matthias T1 - Erfahrung kompensiert nachlassende Fähigkeiten BT - Optimistische Befunde aus der Altersforschung JF - Personalführung Y1 - 2013 IS - 1 SP - 56 EP - 58 ER - TY - JOUR A1 - Sterner, Michael A1 - Bauer, Franz T1 - Power-to-X im Kontext der Energiewende und des Klimaschutzes in Deutschland JF - Chemie-Ingenieur-Technik N2 - Um den Einfluss verschiedener Power-to-X-Verfahren auf die Transformation des deutschen Energiesystems und das Erreichen der Klimaschutzziele zu überprüfen, wurde ein sektorübergreifendes Energiesystemmodel entwickelt. Die daraus gewonnenen Ergebnisse zeigen: Für eine erfolgreiche Energiewende ist der Einsatz von Power-to-X in Zukunft unverzichtbar. Vor allem in Bereichen und Sektoren, in denen hohe Energiedichten erforderlich und nur wenig andere Optionen zur Defossilisierung vorhanden sind, werden Power-to-X-Technologien zwingend notwendig. T2 - Power-to-X in Context of Energy Transition and Climate Change Mitigation in Germany KW - Power-to-Gas KW - Climate mitigation KW - Energy system KW - Modeling KW - Power-to-X KW - Klimaschutz KW - Energiewende Y1 - 2020 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:898-opus4-11669 SN - 0009-286X N1 - Corresponding author: Franz Bauer VL - 92 IS - 1-2 SP - 85 EP - 90 PB - Wiley ER - TY - JOUR A1 - Schubert, Martin J. W. A1 - Höfflinger, Bernd A1 - Schröder, D. A1 - Zingg, René P. T1 - 1D Modeling of SOI MOSFETs Using Distinct Quasi-Fermi Potentials JF - Microelectronic Engineering N2 - Distinct electron and hole quasi-Fermi potentials, øf,n and øf,p, are included into a one-dimensional SOI MOSFET model that accounts for finite inversion and depletion layer thicknesses. The inclusion of øf,n, øf,p in the nonlinear analytical model is demonstrated to describe phenomena like kink effect and the multistable-charge-controlled-memory effect (MCCM) in SOI MOSFETs. The calculation of øf,p(t) depends on the device history and generation/recombination rates. Y1 - 1991 U6 - https://doi.org/10.1016/0167-9317(91)90221-X VL - 15 IS - 1-4 SP - 237 EP - 240 ER - TY - CHAP A1 - Schubert, Martin J. W. T1 - Mixed Analog-Digital Signal Modeling Using Event-Driven VHDL T2 - X Brazilian Symposium on Integrated Circuit Design (SBCCI'97), August 25-27 1997, Porto Alegre, Brazil N2 - A method for solving networks containing generic analog components such as resistors, capacitors and inductors onan event driven time axis using digital VHDL is presented. The components are modeled as complex state machines communicating with their neighbors using INOUT type ports. The method takes advantage of simulation deltas to iterate without simulation-time consumption. A limited range of implicit equations can be solved this way. Y1 - 1997 UR - http://citeseerx.ist.psu.edu/viewdoc/download;jsessionid=50F6F0DA594FB90976CC1474581BC139?doi=10.1.1.508.3657&rep=rep1&type=pdf SP - 77 EP - 86 ER - TY - JOUR A1 - Schubert, Martin J. W. T1 - 70V-to-5V Differential CMOS Input Interface JF - IEE Electronic Letters Y1 - 1994 U6 - https://doi.org/10.1049/el:19940235 VL - 30 IS - 4 SP - 296 EP - 297 ER - TY - CHAP A1 - Declerq, Michel A1 - Schubert, Martin J. W. A1 - Clément, F. T1 - 5V-to-75V CMOS Output Interfaces T2 - Proceedings of the1993 IEEE International Solid-State Circuits Conference (ISSCC), Feb. 24-26 1993, San Francisco, CA, USA N2 - A family of CMOS low- to high-voltage output interface circuits based on a standard, unmodified low-voltage CMOS technology is described. Using only thin-oxide high-voltage (HV) devices with reduced V/sub GS/ (gate-to-source voltage) swing, it makes use of level-shift techniques to meet the constraints on the gate control signals. These static circuits permit the full output voltage swing of V/sub DDH/, while keeping the V/sub GS/ swing of the output devices within the safety limits, including during HV supply transients. Using a standard 2- mu m n-well CMOS technology, reliable, reproducible V/sub DS/ breakdown voltages as high as 120 V and 80 V have been obtained for HV-nMOS and HV-pMOS devices, respectively.< > Y1 - 1993 U6 - https://doi.org/10.1109/ISSCC.1993.280014 SP - 162 EP - 163 ER - TY - JOUR A1 - Schubert, Martin J. W. A1 - Höfflinger, Bernd A1 - Zingg, René P. T1 - An Analytical Model for Strongly Inverted and Accumulated Silicon Films JF - Solid-State Electronics N2 - An analytical model for the spatial distribution of potential, electric field and carrier densities is presented, assuming uniform doping density and constant quasi-Fermi potentials in the direction of modeling. Starting from the current relations a differential equation respecting two-dimensional effects is developed and solved approximately by decomposition in three regions with different preconditions: (a) flatband region, (b) constant spacecharge density and (c) strong inversion or accumulation. Inaccuracies arise mainly from violated preconditions at the interfaces between the different regions. Two-dimensional effects are respected in the analytical model of (b) only but they influence region (c) by means of boundary conditions at the interface of (b) and (c). The investigations of this paper are focused to region (c). This part of our model is identical to the model of Hauser and Littlejohn[1]. They integrated a simplified form of the semiconductor-Poisson equation twice but were restricted to one-dimensional applications and thermal equilibrium. Our derivation allows for large electric fields and current densities perpendicular to the direction of modeling. From analytical considerations confirmed by numerical experiments we suggest preference to the gradual channel condition, with x and y defined according to Fig. 1. This definition allows the potentials to vary significantly with respect to y. We found that this holds for the quasi-Fermi potentials also. Furthermore an empirical model for the maximum width of strong-inversion layers in uniformly doped silicon films is presented in eqn (46). Y1 - 1990 U6 - https://doi.org/10.1016/0038-1101(90)90136-3 VL - 33 IS - 12 SP - 1553 EP - 1567 PB - Elsevier ER - TY - CHAP A1 - Schubert, Martin J. W. T1 - Mixed Signal Modeling in VHDL by Distributed Local Iteration T2 - VHDL Form, Toledo, Spain, April 20-24, 1997 Y1 - 1997 ER - TY - CHAP A1 - Declerq, Michel A1 - Clément, F. A1 - Schubert, Martin J. W. A1 - Harb, Adnan A1 - Dutoit, Michel T1 - Design and Optimization of High-Voltage CMOS Devices Compatible wih a Standard 5V CMOS Technology T2 - Proceedings of IEEE Custom Integrated Circuits Conference, May 9-12 1993, San Diego, CA, USA N2 - High-voltage n- and p-MOSFETs fully compatible with a standard 5 V CMOS technology have been designed, optimized, and fabricated. No process changes are required. By modifying the logical equations generating one of the physical masks from the design masks, a p-type buffer region for the high-voltage p-MOS was easily implemented. This modification does not affect the low-voltage part of the circuits. These high-voltage devices have been used successfully as output drivers in semicustom arrays, and as building blocks for custom low- to high-voltage output interfaces. Aspects of reliability, device protection, and circuit design techniques are addressed. Y1 - 1993 SN - 0-7803-0826-3 U6 - https://doi.org/10.1109/CICC.1993.590766 SP - 24.6.1 EP - 24.6.4 ER - TY - THES A1 - Schubert, Martin J. W. T1 - Eindimensionale Modellierung von SOI MOSFETs Y1 - 1991 CY - Hamburg ER - TY - JOUR A1 - Schubert, Martin J. W. A1 - Höfflinger, Bernd A1 - Zingg, René P. T1 - A One-Dimensional Analytical Model for the Dual-Gate-Controlled Thin-Film SOI MOSFET JF - IEEE Electron Device Letters N2 - A one-dimensional analytical model for dual-gate-controlled SOI MOSFETs is presented and applied to a stacked p-channel MOSFET fabricated by epitaxial lateral overgrowth (ELO). The authors found and modeled a nonlinear dependence of front-gate threshold voltage on back-gate voltage if threshold is defined by a constant current instead of a constant silicon-surface potential. It is demonstrated by comparison of subthreshold slopes that surface potentials are not pinned to the onset of strong inversion or accumulation. Accurate one-dimensional modeling is a necessity for device characterization and a precondition for general SOI models for circuit simulation.< > Y1 - 1991 U6 - https://doi.org/10.1109/55.116927 VL - 12 IS - 9 SP - 489 EP - 491 ER - TY - CHAP A1 - Schubert, Martin J. W. A1 - Höfflinger, Bernd A1 - Zingg, René P. T1 - A New Analytical Charge Model for the Dual-Gate-Controlled Thin-Film SOI MOSFET T2 - Superlattices and Microstructures N2 - An analytical model for dual-gate-controlled SOI MOSFETs is presented, assuming uniformly doped p-silicon films. It is restricted to electron inversion layers and depletion regions, neglecting hole densities. It allows to account for the spatial description of electronic quantities in the silicon film. Due to the non-linearities of the semiconductor equations the model parameters must be extracted iteratively. Some applications are presented to demonstrate the usefulness of the model. Y1 - 1990 U6 - https://doi.org/10.1016/0749-6036(90)90218-V VL - 7 IS - 4 SP - 323 EP - 326 PB - Elsevier ER - TY - THES A1 - Spirkl, Florian T1 - Vergleichende rechnerische Untersuchungen zur Lastaufteilung und Setzungen von Stabilisierungssäulen mit Lasttransferschichten N2 - Die Erschließung von Neubauflächen, steigende Bauwerkslasten und strengere Anforderungen an Setzungen und Setzungsdifferenzen führen zu einem steigenden Bedarf an Tiefgründungsmaßnahmen. Eine relativ junge Entwicklung auf diesem Gebiet ist die Anwendung von Stabilisierungssäulen (StS) und pfahlähnlichen Tragelementen als Alternative zur konventionellen Pfahlgründung. Auf Grund der im Vergleich zum Pfahl geringeren Tragfähigkeit der StS werden diese zumeist als „Säulenwald“ angeordnet und die abzutragende Last über eine Lasttransferschicht (LTS) auf die einzelnen StS abgeleitet. Zusätzlich wird häufig eine oder mehrere Geogitterlagen eingebracht, was zur Erhöhung des Lastanteils der StS führt. Ein gängies Anwendungsbeispiel hierfür ist z.B. die Gründung eines Damms. Über die Lastaufteilung zwischen StS und anstehender Weichschicht wurden im Laufe der Jahre verschiedenste Theorien und Berechnungsansätze veröffentlicht. Zunächst wird eine Auswahl verschiedener geschlossener Berechnungsansätze für den 3-dimensionalen Fall vorgestellt und miteinander verglichen. Diesen ist gemein, dass für die Lastaufteilung lediglich die bodenmechanischen Eigenschaften der LTS und die geometrischen Parameter benötigt werden. Eine Berücksichtigung der anstehenden Weichschicht ist z.B. bei der iterativen Berechnung mittels Lasttransfermethode oder bei FE-Berechnungen möglich. Diese Ansätze werden, da durch die Berücksichtigung der Eigenschaften der Weichschicht weitere Freiheitsgrade entstehen, gesondert miteinander verglichen. Abschließend wird an Hand zweier Beispiele die Komplexität der Problemstellung „Ermittlung der Laustaufteilung zwischen StS und WS“ aufgezeigt. KW - Geotechnik KW - Stabilisierungssäule KW - Lasttransferschicht Y1 - 2021 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:898-opus4-15713 CY - Regensburg ER - TY - CHAP A1 - Romano, Marco A1 - Micklitz, Matthias A1 - Olbrich, Florian A1 - Bierl, Rudolf A1 - Ehrlich, Ingo A1 - Gebbeken, Norbert T1 - Experimental investigation of damping properties of unidirectionally and fabric reinforces plastics by the free decay method T2 - Proceeding of the 15th International Materials Symposium (IMSP´2014), Pamukkale University (Denizli, Turkey), 15./17. October 2014 Y1 - 2014 SP - 665 EP - 679 ER - TY - CHAP A1 - van der Weerd, Bastiaan A1 - Bierl, Rudolf A1 - Matysik, Frank-Michael T1 - A Conductivity Probe for the Determination of Carbon Dioxide Tension at the Oxygenator Exhaust Outlet during Extracorporeal Membrane Oxygenation (ECMO) T2 - Electrochemistry 2014, September 22 - 24, Mainz Y1 - 2014 ER - TY - GEN A1 - van der Weerd, Bastiaan A1 - Bierl, Rudolf A1 - Matysik, Frank-Michael T1 - A Conductivity Probe for Determination of the Carbon Dioxide Tension at the Oxygenator Exhaust Outlet during Extracorporeal Membrane Oxygenation (ECMO) T2 - Proceedings of the 9th ISC Modern Analytical Chemistry 2013, Prag Y1 - 2013 UR - https://www.gdch.de/fileadmin/downloads/Veranstaltungen/Tagungen/2014_Tagungen/analytica/poster_abstracts/sens03_vanderweerd_5860.pdf ER - TY - GEN A1 - Rück, Thomas A1 - Hofmann, Matthias A1 - Bierl, Rudolf T1 - Development of a miniaturized photoacoustic multigas sensing system for trace gas measurement T2 - 17th International Conference on Photoacoustic and Photothermal Phenomena, Oct. 20-24, 2013, Suzhou China Y1 - 2013 UR - https://www.gdch.de/fileadmin/downloads/Veranstaltungen/Tagungen/2014_Tagungen/analytica/poster_abstracts/sens05_rueck_5925.pdf ER - TY - CHAP A1 - van der Weerd, Bastiaan A1 - Bierl, Rudolf A1 - Matysik, Frank-Michael T1 - A Conductivity Probe for the Determination of Carbon Dioxide Tension at the Oxygenator Exhaust Outlet during Extracorporeal Membrane Oxygenation (ECMO) T2 - analytica Conference 2014, 1. bis 4. April, München Y1 - 2014 ER - TY - CHAP A1 - Hofmann, Matthias A1 - Bierl, Rudolf A1 - Rück, Thomas T1 - Implementation of a dual-phase lock-in amplifier on a TMS320C5515 digital signal processor T2 - Proceedings of the 5th European DSP Education and Research Conference (EDERC), 13-14 Sept. 2012, Amsterdam N2 - A digital dual-phase lock-in amplifier that is capable to run on a low-cost, low-power platform comprising a 16-bit fixed-point digital signal processor was developed. This is achieved by a set of optimised digital filters including an exponential averager to adjust the time constant of the overall filter. The reference frequency is generated using a direct digital synthesis source utilising angle decomposition with a resolution of 1 Hz. The digital lock-in algorithm is described and the performance of the algorithm is analysed. The experimental results show that the developed lock-in amplifier achieves similar performance to a commercially available lock-in amplifier. Y1 - 2012 U6 - https://doi.org/10.1109/EDERC.2012.6532217 ER -