TY - JOUR A1 - Eiler, Julian A1 - Weber, Stefan A1 - Gerlesberger, Peter A1 - Plöchinger, Heinz A1 - Schreiner, Rupert T1 - Active heat-loss compensated miniaturized pirani sensor chip JF - IEEE Sensors Letters N2 - Due to the limited measuring range of commercial Pirani sensors in lower pressure regimes, attempts are being made to extend the measuring range of the sensors. Our approach to extend the measuring range toward lower pressures is a micro-electromechanical systems (MEMS) Pirani sensor with active heat compensation on the suspensions. The sensor element has the shape of a microhotplate and consists of a nickel heating meander embedded in two silicon nitride layers. The whole structure is built on a silicon wafer. The sensor element is suspended on all four corners of the substrate. On each of the suspensions, there is an additional heating structure that minimizes the heat flux from the hot sensor element toward the substrate. The sensor is driven at a constant temperature through a self-balancing Wheatstone bridge. A constant voltage is applied to the heating structures on the suspensions. It has been demonstrated that with these additional heaters, the sensitivity of the sensor can be increased in the high-vacuum regime. This enables reliable vacuum measurements down to 10−6 mbar. KW - Temperature measurement KW - Heating systems KW - Temperature sensors KW - Sensitivity KW - Pressure measurement KW - Voltage measurement KW - Heat sinks KW - Semiconductor device measurement KW - Noise measurement KW - Bridge circuits Y1 - 2025 U6 - https://doi.org/10.1109/LSENS.2025.3605747 SN - 2475-1472 VL - 9 IS - 10 PB - Institute of Electrical and Electronics Engineers (IEEE) ER - TY - CHAP A1 - Buchner, Philipp A1 - Hausladen, Matthias A1 - Schels, Andreas A1 - Herdl, Florian A1 - Edler, Simon A1 - Bachmann, Michael A1 - Schreiner, Rupert T1 - An Integrated Silicon Nanowire Field Emission Electron Source on a Chip with High Electron Transmission T2 - 2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA N2 - Silicon nanowire field emission arrays (50 × 50 pillars) were fabricated on a silicon glass hybrid wafer. The glass acts both as the support for the whole structure and insulator between cathode and extraction grid. The extraction grid matches the emitter structures and is optically aligned and adhered to the emitter chip by a vacuum compatible epoxide adhesive. These chips exhibit an emission current of about 600 μA at an extraction voltage of 300 V. The electron transmission through the grid is above 80 %. 58-hour longtime measurements were conducted showing low degradation of the emission current and high stability of electron transmission. KW - Semiconductor device measurement KW - Stimulated emission KW - Optical device fabrication KW - Glass KW - Power system stability KW - Insulators KW - Electron optics Y1 - 2023 SN - 979-8-3503-0143-4 U6 - https://doi.org/10.1109/IVNC57695.2023.10188878 SP - 6 EP - 8 PB - IEEE ER - TY - CHAP A1 - Schaller, R. A1 - Maier, F. A1 - Mandl, Roland T1 - Thermally stimulated depolarization current - characterization of a multi-layer dielectric stack for semiconductor packages T2 - 2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM), 23-26 October 2022, Smolenice Castle, Slovakia N2 - In this paper, the results of Thermally Stimulated Depolarization Currents (TSDC)-measurements of a complex system of stacked dielectric layers, like typically appearing in semiconductor packages, is presented. Characteristics of the individual isolation layers are presented solely and the results are compared to the stack. The investigated layers are comprising polyimide film, alkali-free glass, polyolefin film and epoxy based mold compound. Measurements have been carried out in the temperature range from 19 - 195°C at varying polarization fields for every material. Various relaxation peaks, originated by different polarization mechanisms within the materials could be observed. A comparison between the TSDC-peaks of the layer stack and the individual materials is shown. Our results demonstrate, that the super positioned spectrum is getting dominated by a single portion, the mold compound. KW - Glass KW - Micromechanical devices KW - Polyimides KW - Semiconductor device measurement KW - Semiconductor devices KW - Temperature distribution KW - Temperature measurement Y1 - 2022 SN - 978-1-6654-6977-7 U6 - https://doi.org/10.1109/ASDAM55965.2022.9966799 SP - 1 EP - 5 PB - IEEE ER - TY - CHAP A1 - Prommesberger, Christian A1 - Langer, Christoph A1 - Ławrowski, Robert Damian A1 - Dams, Florian A1 - Schreiner, Rupert A1 - Ławrowski, Robert Damian T1 - Gated p-Si field emitter arrays for sensor applications T2 - 2015 28th International Vacuum Nanoelectronics Conference (IVNC) N2 - We report on gated p-type Si-tip array cathodes for implementation into field emission electron sources for sensor applications. Arrays of 16 and 100 tips with tip heights of 3 μm and tip radii below 30 nm with integrated gate electrodes concentrically positioned 2 μm below the tip apexes were fabricated using an improved process, which leads to an enhanced isolation layer quality with sufficient breakdown field strengths and low leakage currents. Integral measurements with a fixed grid potential of 400 V showed emission currents up to 35 μA for 100 tips at a cathode voltage of 150 V and an almost negligible parasitic gate current. The array with 16 p-type Si-tips showed a significant stabilization of the emission current in the range of 0.3 - 0.4 μA, for cathode voltages between 90 V and 150 V. The current fluctuation in this saturation regime was measured for 10 minutes and a value of less than ± 1% was observed. No degradation of the cathode was found after 6 hours of operation at a constant cathode voltage of 100 V and a constant grid voltage of 400 V. KW - CATHODES KW - Current measurement KW - Current stabilization KW - field emission KW - integrated gate-electrode KW - Iron KW - Logic gates KW - semiconductor KW - Semiconductor device measurement KW - silicon KW - silicon tip array Y1 - 2015 U6 - https://doi.org/10.1109/IVNC.2015.7225567 SP - 164 EP - 165 PB - IEEE ER - TY - CHAP A1 - Schlal, Sebastian A1 - Wicke, Markus A1 - Zahner, Thomas A1 - Lang, Kurt-Jürgen T1 - Evaluation of thermal solder joint quality and thermal performance of PCBs by using standard measurement equipment T2 - 20th International Workshop on Thermal Investigations of ICs and Systems, 24-26 Sept. 2014, Greenwich, UK N2 - By using more powerful LEDs a good thermal management is becoming more and more important. Here usually the thermal interconnects have to be in focus. Therefore a simple and rapid measurement method for the thermal check of the solder joint in a high volume production is necessary. A standard thermal resistance measurement is very time consuming due to the calibration of each device. By using thermal characterized reference devices it is possible to skip the time consuming part. Furthermore, a simple methodology for evaluating the thermal performance of the various metal core PCB (MCPCB) materials and construction is required during development. In this paper we will present how we successfully demonstrated that this new method offers an opportunity to determine the thermal performance of a high power QFN LED on different types of isolated metal substrate (IMS) and with a standard SMU [1] (source measurement units). KW - Electrical resistance measurement KW - Light emitting diodes KW - Semiconductor device measurement KW - Soldering KW - standards KW - Thermal resistance Y1 - 2014 U6 - https://doi.org/10.1109/THERMINIC.2014.6972522 SP - 1 EP - 5 PB - IEEE ER - TY - JOUR A1 - Szabó, Peter A1 - Steffens, Oliver A1 - Lenz, Michael A1 - Farkas, Gábor T1 - Transient junction-to-case thermal resistance measurement methodology of high accuracy and high repeatability JF - IEEE Transactions on Components and Packaging Technologies N2 - High-power packages show a characteristic three-dimensional heat flow resulting in large lateral changes in chip and case surface temperature. This paper proposes an unambiguous definition for the R/sub thJC/ junction-to-case thermal resistance as a key parameter of such packages based on a transient measurement technique ensuring high repeatability even at very low R/sub th/ values. The technique is illustrated on thermal transient measurements of high-power MOSFET devices. It is also presented how the same measurement results can be used for die attach quality analysis. Finally, a comparative method is shown for measuring the differences of R/sub th/ values among samples with many times higher resolution compared with a direct R/sub thJC/ measurement. KW - Thermal resistance KW - Electrical resistance measurement KW - Temperature KW - Packaging KW - Cold plates KW - MOSFET circuits KW - Semiconductor device measurement KW - Surface resistance KW - Microassembly KW - Thermal conductivity Y1 - 2005 U6 - https://doi.org/10.1109/TCAPT.2005.859768 SN - 1521-3331 VL - 28 IS - 4 SP - 630 EP - 636 ER -