TY - CHAP A1 - Kleshch, Victor I. A1 - Serbun, Pavel A1 - Orekhov, Anton A1 - Lützenkirchen-Hecht, Dirk A1 - Obraztsov, Alexander N. A1 - Prommesberger, Christian A1 - Langer, Christoph A1 - Schreiner, Rupert A1 - Lutzenkirchen-Hecht, Dirk T1 - Field emission properties of p-type silicon tips decorated with tungsten nanoparticles T2 - 2017 30th International Vacuum Nanoelectronics Conference (IVNC), 10-14 July 2017, Regensburg, Germany N2 - An array of conical-shaped p-type silicon tips was fabricated by using reactive ion etching and sharpening oxidation. The apex of each tip was decorated by a tungsten hemispherical nanoparticle. Field emission properties of the tips were measured by a tungsten-needle anode positioned above the tip apex. Tips decorated with tungsten nanoparticles demonstrated a smaller saturation region in current-voltage characteristics compared to the pristine tips. An emission activation process, which consisted in sudden current increase at certain value of applied voltage, was observed for the decorated silicon tips. This behavior was explained by the formation of vertical protrusions extending from the metal particles revealed by scanning electron microscopy after field emission experiments. KW - Current measurement KW - field emission KW - Ions KW - Iron KW - metal nanoparticles KW - nanoparticles KW - p-type silicon KW - Scanning electron microscopy KW - silicon KW - Tungsten Y1 - 2017 U6 - https://doi.org/10.1109/IVNC.2017.8051580 SP - 138 EP - 139 PB - IEEE ER -