TY - JOUR A1 - Ruhl, Guenther A1 - Wittmann, Sebastian A1 - Koenig, Matthias A1 - Neumaier, Daniel T1 - The integration of graphene into microelectronic devices JF - Beilstein Journal of Nanotechnology N2 - Since 2004 the field of graphene research has attracted increasing interest worldwide. Especially the integration of graphene into microelectronic devices has the potential for numerous applications. Therefore, we summarize the current knowledge on this aspect. Surveys show that considerable progress was made in the field of graphene synthesis. However, the central issue consists of the availability of techniques suitable for production for the deposition of graphene on dielectric substrates. Besides, the encapsulation of graphene for further processing while maintaining its properties poses a challenge. Regarding the graphene/metal contact intensive research was done and recently substantial advancements were made towards contact resistances applicable for electronic devices. Generally speaking the crucial issues for graphene integration are identified today and the corresponding research tasks can be clearly defined. KW - BORON-NITRIDE KW - CHEMICAL-VAPOR-DEPOSITION KW - CONTACT-RESISTANCE KW - contacts KW - COPPER FOILS KW - deposition KW - ELECTRODES KW - encapsulation KW - FILMS KW - graphene KW - GROWTH KW - LOW-TEMPERATURE KW - process integration KW - RAMAN-SPECTROSCOPY KW - SUBSTRATE Y1 - 2017 U6 - https://doi.org/10.3762/bjnano.8.107 VL - 8 SP - 1056 EP - 1064 PB - Beilstein-Institut ER - TY - JOUR A1 - Chee, See Wee A1 - Kammler, Martin A1 - Graham, Jeremy A1 - Gignac, Lynne A1 - Reuter, Mark C. A1 - Hull, Robert A1 - Ross, Frances M. T1 - Directed Self-Assembly of Ge Quantum Dots Using Focused Si2+ Ion Beam Patterning JF - scientific reports N2 - We show that templating a Si surface with a focused beam of Si2+ or Si+ ions can create suitable nucleation sites for the subsequent growth of self-assembled Ge quantum dots by chemical vapor deposition. To determine the mechanism of patterning we use atomic force microscopy to show that, similar to Ga+ patterning, the formation of a surface pit is required to enable control over Ge quantum dot locations. We find that relatively high implantation doses are required to achieve patterning, and these doses lead to amorphization of the substrate. We assess the degree to which the substrate crystallinity can be recovered by subsequent processing. Using in situ transmission electron microscopy heating experiments we find that recrystallization is possible at the growth temperature of the Ge quantum dots, but defects remain that follow the pattern of the initial implantation. We discuss the formation mechanism of the defects and the benefits of using Si ions for patterning both defects and quantum dots on Si substrates. KW - ARRAYS KW - AU KW - DAMAGE KW - GROWTH KW - IMPLANTATION KW - NUCLEATION KW - RECOVERY KW - silicon KW - TECHNOLOGY Y1 - 2018 U6 - https://doi.org/10.1038/s41598-018-27512-z VL - 8 SP - 1 EP - 10 PB - Nature ER - TY - JOUR A1 - Edler, Simon A1 - Schels, Andreas A1 - Herdl, Florian A1 - Hansch, Walter A1 - Bachmann, Michael A1 - Dudeck, Markus A1 - Duesberg, Felix A1 - Pahlke, Andreas A1 - Hausladen, Matthias A1 - Buchner Philipp, A1 - Schreiner, Rupert T1 - Origin of the current saturation level of p-doped silicon field emitters JF - Journal of Vacuum Science & Technology B N2 - Using p-type semiconductors for field emitters is one simple way to realize an integrated current limiter to improve the lifetime of the cathode. In this work, the origin of the current saturation of p-type silicon emitters is investigated in detail. Single emitters are electrically characterized and compared to simulation results. With a simulation model considering a high surface generation rate and elevated tip temperature, a good agreement to the measured data is found. This observation is supported further by alteration of the surface experimentally. Electrical measurements after different treatments in hydrofluoric acid as well as heated and subsequent operation at room temperature are well explained by the influence of surface generation. Furthermore, it is shown that the field penetration leads to a small voltage drop and a strong geometry-dependent reduction of the field enhancement factor. KW - EMISSION KW - GROWTH KW - NATIVE-OXIDE Y1 - 2022 U6 - https://doi.org/10.1116/6.0001554 VL - 40 IS - 1 PB - AIP Publishing ER -