TY - JOUR A1 - Payer, Thomas A1 - Klein, C. A1 - Acet, M. A1 - Ney, V. A1 - Kammler, Martin A1 - Meyer zu Heringdorf, Frank-Joachim A1 - Horn-von Hoegen, Michael T1 - High-quality epitaxial Bi(111) films on Si(111) by isochronal annealing JF - Thin Solid Films N2 - Bi(111) films grown on Si(111) at room temperature show a significantly higher roughness compared to Bi films grown on Si(100) utilizing a kinetic pathway based on a low-temperature process. Isochronal annealing steps of 3 min duration each with temperatures up to 200 °C cause a relaxation of the Bi films' lattice parameter toward the Bi bulk value and yield an atomically flat Bi surface. Driving force for the relaxation and surface reordering is the magic mismatch of 11 Bi atoms to 13 Si atoms that emerges at annealing temperatures above 150 °C and reduces the remaining strain to less than 0.2%. KW - Epitaxy KW - Strain KW - Annealing KW - Bismuth KW - Silicon Y1 - 2012 U6 - https://doi.org/10.1016/j.tsf.2012.06.004 VL - 520 IS - 23 SP - 6905 EP - 6908 PB - Elsevier ER -