TY - CHAP A1 - Knodl, Thomas A1 - Hanke, Christian A1 - Saravanan, Brem Kumar A1 - Peschke, Martin A1 - Schreiner, Rupert A1 - Stegmuller, Bernhard ED - Righini, Giancarlo C. ED - Honkanen, Seppo T1 - Integrated 1.3-μm InGaAlAs-InP laser-modulator with double-stack MQW layer structure T2 - Proceedings Volume 5451, Integrated Optics and Photonic Integrated Circuits N2 - We present first experimental results of the successful transfer of our monolithic integrated double-stack multi quantum well laser-modulator approach from the traditional InGaAsP/InP to the more promising InGaAlAs/InP material system. In continuous wave operation at room temperature, the devices achieved threshold currents of <21 mA, fiber coupled optical power levels up to 570 μW and static extinction ratios in the range of 15 dB/V. The measured small-signal modulation bandwidth of about 10 GHz is capacitance limited due to a conservative device layout. Y1 - 2004 U6 - https://doi.org/10.1117/12.544610 PB - SPIE ER -