TY - JOUR A1 - Szabó, Peter A1 - Steffens, Oliver A1 - Lenz, Michael A1 - Farkas, Gábor T1 - Transient junction-to-case thermal resistance measurement methodology of high accuracy and high repeatability JF - IEEE Transactions on Components and Packaging Technologies N2 - High-power packages show a characteristic three-dimensional heat flow resulting in large lateral changes in chip and case surface temperature. This paper proposes an unambiguous definition for the R/sub thJC/ junction-to-case thermal resistance as a key parameter of such packages based on a transient measurement technique ensuring high repeatability even at very low R/sub th/ values. The technique is illustrated on thermal transient measurements of high-power MOSFET devices. It is also presented how the same measurement results can be used for die attach quality analysis. Finally, a comparative method is shown for measuring the differences of R/sub th/ values among samples with many times higher resolution compared with a direct R/sub thJC/ measurement. KW - Thermal resistance KW - Electrical resistance measurement KW - Temperature KW - Packaging KW - Cold plates KW - MOSFET circuits KW - Semiconductor device measurement KW - Surface resistance KW - Microassembly KW - Thermal conductivity Y1 - 2005 U6 - https://doi.org/10.1109/TCAPT.2005.859768 SN - 1521-3331 VL - 28 IS - 4 SP - 630 EP - 636 ER -