1165 1991 eng 489 491 9 12 article 0 2021-02-06 -- -- A one-dimensional analytical model for dual-gate-controlled SOI MOSFETs is presented and applied to a stacked p-channel MOSFET fabricated by epitaxial lateral overgrowth (ELO). The authors found and modeled a nonlinear dependence of front-gate threshold voltage on back-gate voltage if threshold is defined by a constant current instead of a constant silicon-surface potential. It is demonstrated by comparison of subthreshold slopes that surface potentials are not pinned to the onset of strong inversion or accumulation. Accurate one-dimensional modeling is a necessity for device characterization and a precondition for general SOI models for circuit simulation.< > IEEE Electron Device Letters 10.1109/55.116927 publish peer-reviewed Martin J. W. Schubert Bernd Höfflinger René P. Zingg Fakultät Elektro- und Informationstechnik Externe Publikationen Labor Elektronik Materialien und Produktion