1164 1990 eng 323 326 4 7 conferenceobject Elsevier 0 2021-02-06 -- -- An analytical model for dual-gate-controlled SOI MOSFETs is presented, assuming uniformly doped p-silicon films. It is restricted to electron inversion layers and depletion regions, neglecting hole densities. It allows to account for the spatial description of electronic quantities in the silicon film. Due to the non-linearities of the semiconductor equations the model parameters must be extracted iteratively. Some applications are presented to demonstrate the usefulness of the model. Superlattices and Microstructures 10.1016/0749-6036(90)90218-V Int. Conf. Phys. Electro-Opt. Microstruct. and Microdevices (ICPEOM'90), 5th, July 30 - Aug. 3 1990, Heraklion, Crete, Greece publish Martin J. W. Schubert Bernd Höfflinger René P. Zingg Fakultät Elektro- und Informationstechnik Externe Publikationen Labor Elektronik Materialien und Produktion