<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>1138</id>
    <completedYear/>
    <publishedYear>2016</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>219</pageFirst>
    <pageLast>220</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-05</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Field emission from black silicon structures with integrated gate electrode</title>
    <abstract language="eng">Black silicon structures with integrated gate electrode were realized by using an improved fabrication process. An enhanced insulation layer was achieved by a combination of dry and wet oxidation, and a gold layer was evaporated as gate electrode. The black silicon structures were prepared with a RIE/ICP etching process at room temperature. Arrays of 16 and 100 apertures with buried p-doped black silicon whiskers have been fabricated. These structures have an emitter height of approximately 1.5 μm with tip radii between 5 nm and 30 nm. The whiskers are surrounded by the gate electrode in a distance of 1.5 μm. Integral field emission measurements yielded an onset voltage of 92 V for 16 apertures and 60 V for 100 apertures for an emission current of 1 nA. Maximum emission currents up to 0.2 μA were observed for the array with 100 apertures at a cathode voltage of 200 V. Stability measurements showed a current fluctuation of ± 21% at a mean value of the emission current of 12 nA over a period of 30 minutes for 16 apertures with b-Si whiskers.</abstract>
    <parentTitle language="eng">29th International Vacuum Nanoelectronics Conference (IVNC), 2016,  11-15 July, Vancouver, BC, Canada</parentTitle>
    <identifier type="issn">2380-6311</identifier>
    <identifier type="doi">10.1109/IVNC.2016.7551532</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <author>Christian Prommesberger</author>
    <author>Christoph Langer</author>
    <author>Robert Damian Ławrowski</author>
    <author>Rupert Schreiner</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emission</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>black silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>integrated gate electrode</value>
    </subject>
    <collection role="ddc" number="621">Angewandte Physik</collection>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
</export-example>
