<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>6452</id>
    <completedYear/>
    <publishedYear>2023</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>224</pageFirst>
    <pageLast>226</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Beta Factor Mapping of Individual Emitting Tips During Integral Operation of Field Emission Arrays</title>
    <abstract language="eng">Emission uniformity mappings of field emitter arrays provide important insight into degradation mechanisms, but are often laborious, non-integral, costly, or not quantifiable. Here, a low-cost Raspberry Pi HQ camera is used as an extraction anode to quantify the emission distribution in field emitter arrays. A verification measurement using controlled SEM electron beams proves, that current-voltage characteristics of individual emission sites can be determined by combining the integral electrical data with the image data. The characteristics are used to quantify the field enhancement factors of an 30x30 silicon field emitter array during integral operation. Comparison of the field enhancement factor distributions before and after a one-hour constant current operation at 1 µA shows an increase from 50 actively emitting tips before to 156 after the measurement. It is shown, that the distribution of field enhancement factors shifts towards lower values, due to the increasing degradation for high field enhancement tips, especially above 1500.</abstract>
    <parentTitle language="eng">2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA</parentTitle>
    <identifier type="isbn">979-8-3503-0143-4</identifier>
    <identifier type="doi">10.1109/IVNC57695.2023.10188957</identifier>
    <enrichment key="opus.import.date">2023-08-21T08:29:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">true</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Andreas Schels</author>
    <author>Florian Herdl</author>
    <author>Matthias Hausladen</author>
    <author>Dominik Wohlfartsstätter</author>
    <author>Michael Bachmann</author>
    <author>Simon Edler</author>
    <author>Felix Düsberg</author>
    <author>Andreas Pahlke</author>
    <author>Philipp Buchner</author>
    <author>Rupert Schreiner</author>
    <author>Walter Hansch</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emission</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emission imaging</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emission distribution</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field enhancement factor</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>CMOS imaging</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>beta factor</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>1113</id>
    <completedYear/>
    <publishedYear>2018</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>1-2</pageNumber>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-05</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Nano Emitters on Silicon Pillar Structures generated by a Focused Electron Beam Induced Deposition</title>
    <abstract language="eng">Nano emitters were deposited by focused electron beam induced deposition of Trimethyl-(methylcyclopentadienyl)platinum(IV) on top of silicon pillars. The nano emitters were exactly positioned in the center on the top of up to four pillars of a quadratic arranged array of sixteen pillars with a pitch of 50 μm. Integral field emission measurements were performed in a diode configuration with a 50 μm mica spacer in a vacuum chamber at pressures of about 10 -9 mbar. The Fowler-Nordheim plots show a linear behavior, like expected for an n-type silicon material and a metal needle. The I-V measurement of the most promising sample shows an integral emission current up to 2 μm at a voltage of 600 V (12 MV/m) and an onset voltage for a current of 1 nA of about 300 V.</abstract>
    <parentTitle language="eng">International Vacuum Nanoelectronics Conference (IVNC), 31st, 2018, Kyoto, Japan</parentTitle>
    <identifier type="doi">10.1109/IVNC.2018.8520059</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <author>Robert Damian Ławrowski</author>
    <author>Christoph Langer</author>
    <author>Rupert Schreiner</author>
    <author>Josef Sellmair</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emission</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>nano emitter</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>focused electron beam induced deposition</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>MeCpPtMe3</value>
    </subject>
    <collection role="ddc" number="621">Angewandte Physik</collection>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>8559</id>
    <completedYear/>
    <publishedYear>2025</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>2</pageNumber>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2025-11-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Investigation on the influence of internal voltage drops on the emission behavior of silicon field emission arrays using CMOS image sensor</title>
    <abstract language="eng">In this paper we report on an improved measurement and analysis method for determining the emission current distribution of field emitter arrays with CMOS sensors. It can also be used for field emission arrays where not all surfaces of the emitters are at the same electrical potential (e.g. for p-doped Si tips, where a strong current saturation occurs). To demonstrate the functionality of this method, a n-doped field emission array was measured using a variable external series resistance. Brightness variations in emission spots were analyzed to re-calculate the known series resistances for comparison. The re-calculated value is in good agreement with the actual value of the resistance. This method offers a quantitative approach to assess internal voltage drop effects on field emission using optical readout</abstract>
    <parentTitle language="eng">38th International Vacuum Nanoelectronics Conference (IVNC)</parentTitle>
    <identifier type="doi">10.1109/IVNC65669.2025.11120937</identifier>
    <enrichment key="ConferenceStatement">08-11 July 2025, Reykjavik, Iceland</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Ali Asgharzade</author>
    <author>Mathias Bartl</author>
    <author>Matthias Hausladen</author>
    <author>Yang Chen</author>
    <author>Philipp Buchner</author>
    <author>Simon Edler</author>
    <author>Michael Bachmann</author>
    <author>Juncong She</author>
    <author>Rupert Schreiner</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emission imaging</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emission</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>CMOS sensor</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
    <collection role="DFGFachsystematik" number="1">Ingenieurwissenschaften</collection>
    <collection role="othforschungsschwerpunkt" number="">Materialien und Produktion</collection>
  </doc>
</export-example>
