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  <doc>
    <id>1113</id>
    <completedYear/>
    <publishedYear>2018</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>1-2</pageNumber>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-05</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Nano Emitters on Silicon Pillar Structures generated by a Focused Electron Beam Induced Deposition</title>
    <abstract language="eng">Nano emitters were deposited by focused electron beam induced deposition of Trimethyl-(methylcyclopentadienyl)platinum(IV) on top of silicon pillars. The nano emitters were exactly positioned in the center on the top of up to four pillars of a quadratic arranged array of sixteen pillars with a pitch of 50 μm. Integral field emission measurements were performed in a diode configuration with a 50 μm mica spacer in a vacuum chamber at pressures of about 10 -9 mbar. The Fowler-Nordheim plots show a linear behavior, like expected for an n-type silicon material and a metal needle. The I-V measurement of the most promising sample shows an integral emission current up to 2 μm at a voltage of 600 V (12 MV/m) and an onset voltage for a current of 1 nA of about 300 V.</abstract>
    <parentTitle language="eng">International Vacuum Nanoelectronics Conference (IVNC), 31st, 2018, Kyoto, Japan</parentTitle>
    <identifier type="doi">10.1109/IVNC.2018.8520059</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <author>Robert Damian Ławrowski</author>
    <author>Christoph Langer</author>
    <author>Rupert Schreiner</author>
    <author>Josef Sellmair</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emission</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>nano emitter</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>focused electron beam induced deposition</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>MeCpPtMe3</value>
    </subject>
    <collection role="ddc" number="621">Angewandte Physik</collection>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>8566</id>
    <completedYear/>
    <publishedYear>2024</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst>46</pageFirst>
    <pageLast>53</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Hochschule für Angewandte Wissenschaften Landshut</publisherName>
    <publisherPlace>Landshut</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2025-11-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Elektronenquellen basierend auf Feldemission aus Silizium</title>
    <abstract language="deu">Der Beitrag gibt einen Überblick über zwei typische Bauformen für Elektronenquellen auf der Basis von Feldemission aus Silizium. Des Weiteren wird eine typische Trioden-Beschaltung solcher Elektronenquellen für hohe Elektronentransmission vorgestellt und dabei auf ihre Leistungsfähigkeit eingegangen.</abstract>
    <parentTitle language="deu">Tagungsband zum 4. Symposium Elektronik und Systemintegration ESI: 17. April 2024, Hochschule Landshut</parentTitle>
    <identifier type="isbn">978-3-9818439-9-6</identifier>
    <identifier type="doi">10.57688/421</identifier>
    <identifier type="urn">urn:nbn:de:bvb:860-opus4-4212</identifier>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Philipp Buchner</author>
    <author>Matthias Hausladen</author>
    <author>Mathias Bartl</author>
    <author>Rupert Schreiner</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="DFGFachsystematik" number="1">Ingenieurwissenschaften</collection>
  </doc>
  <doc>
    <id>8504</id>
    <completedYear/>
    <publishedYear>2025</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>4</pageNumber>
    <edition/>
    <issue>10</issue>
    <volume>9</volume>
    <type>article</type>
    <publisherName>Institute of Electrical and Electronics Engineers (IEEE)</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Active heat-loss compensated miniaturized pirani sensor chip</title>
    <abstract language="eng">Due to the limited measuring range of commercial Pirani sensors in lower pressure regimes, attempts are being made to extend the measuring range of the sensors. Our approach to extend the measuring range toward lower pressures is a micro-electromechanical systems (MEMS) Pirani sensor with active heat compensation on the suspensions. The sensor element has the shape of a microhotplate and consists of a nickel heating meander embedded in two silicon nitride layers. The whole structure is built on a silicon wafer. The sensor element is suspended on all four corners of the substrate. On each of the suspensions, there is an additional heating structure that minimizes the heat flux from the hot sensor element toward the substrate. The sensor is driven at a constant temperature through a self-balancing Wheatstone bridge. A constant voltage is applied to the heating structures on the suspensions. It has been demonstrated that with these additional heaters, the sensitivity of the sensor can be increased in the high-vacuum regime. This enables reliable vacuum measurements down to 10−6 mbar.</abstract>
    <parentTitle language="eng">IEEE Sensors Letters</parentTitle>
    <identifier type="issn">2475-1472</identifier>
    <identifier type="doi">10.1109/LSENS.2025.3605747</identifier>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <enrichment key="CorrespondingAuthor">Julian Eiler</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Julian Eiler</author>
    <author>Stefan Weber</author>
    <author>Peter Gerlesberger</author>
    <author>Heinz Plöchinger</author>
    <author>Rupert Schreiner</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Temperature measurement</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Heating systems</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Temperature sensors</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Sensitivity</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Pressure measurement</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Voltage measurement</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Heat sinks</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Semiconductor device measurement</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Noise measurement</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Bridge circuits</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlm">Schreiner, Rupert (Prof. Dr.), Zeitschriftenaufsätze - Labor für Mikrosensorik</collection>
    <collection role="DFGFachsystematik" number="1">Ingenieurwissenschaften</collection>
    <collection role="othforschungsschwerpunkt" number="">Materialien und Produktion</collection>
  </doc>
  <doc>
    <id>8116</id>
    <completedYear/>
    <publishedYear>2025</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferencesummary</type>
    <publisherName>Deutsche Physikalische Gesellschaft e.V.</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2025-05-28</completedDate>
    <publishedDate>2025-03-19</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Miniaturized Pirani vacuum sensor with active heat-loss compensation</title>
    <abstract language="eng">Pirani sensors measure the thermal conductivity of the residual gas in a vacuum by creating a thermal gradient between a heated sensor element and a heat sink. The heat flux from the sensor element to the heat sink over the residual gas is a measure of the vacuum and can be determined by the electrical power applied. In addition to the heat flux over the gas, there are further energy losses from the heating structure due to radiation and parasitic heat fluxes via the suspensions of the sensor element. These losses reduce the sensitivity of the sensor. For this reason, a Micro-Pirani sensor in the shape of a microhotplate was developed that actively compensates the heat flux via the suspensions. This was achieved by placing additional heating structures on the suspensions, which interrupt the heat flow from the sensor element via the suspensions during operation. This active compensation improves the sensitivity at low pressures, enabling vacuum measurements from atmospheric pressure down to 10e-6 mbar.</abstract>
    <parentTitle language="eng">Verhandlungen der Deutschen Physikalischen Gesellschaft e.V. (DPG), Regensburg, 16. - 21. März 2025</parentTitle>
    <identifier type="url">https://www.dpg-verhandlungen.de/year/2025/conference/regensburg/part/o/session/66/contribution/7</identifier>
    <identifier type="issn">2751-0522</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Julian Eiler</author>
    <author>Stefan Weber</author>
    <author>Peter Gerlesberger</author>
    <author>Heinz Plöchinger</author>
    <author>Rupert Schreiner</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
    <collection role="DFGFachsystematik" number="1">Ingenieurwissenschaften</collection>
  </doc>
  <doc>
    <id>8565</id>
    <completedYear/>
    <publishedYear>2024</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst>38</pageFirst>
    <pageLast>45</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Hochschule für Angewandte Wissenschaften Landshut</publisherName>
    <publisherPlace>Landshut</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2025-11-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Miniaturisierter Wasserstoffsensor basierend auf der 3-Omega Methode</title>
    <abstract language="deu">Die Arbeit stellt einen thermischen Wasserstoffsensor auf Siliziumbasis vor, der mit der 3-Omega Messmethode betrieben wird. Durch das dynamische Messverfahren, die große Sensoroberfläche bei gleichzeitig geringer thermischer Masse und der Materialkombination wird eine Auflösungsgrenze von 55 ppm Wasserstoff in Stickstoff erreicht.</abstract>
    <parentTitle language="deu">Tagungsband zum 4. Symposium Elektronik und Systemintegration ESI: 17. April 2024, Hochschule Landshut</parentTitle>
    <identifier type="isbn">978-3-9818439-9-6</identifier>
    <identifier type="doi">10.57688/420</identifier>
    <identifier type="urn">urn:nbn:de:bvb:860-opus4-4205</identifier>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Julian Eiler</author>
    <author>Dominik Berndt</author>
    <author>Rupert Schreiner</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="DFGFachsystematik" number="1">Ingenieurwissenschaften</collection>
  </doc>
  <doc>
    <id>8805</id>
    <completedYear/>
    <publishedYear>2025</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>325</pageFirst>
    <pageLast>326</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferencepresentation</type>
    <publisherName>AMA</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">MP61 - Detection of Electron Beam in Atmospheric Pressure Using CMOS Image Sensor</title>
    <abstract language="eng">In the article, a new detection system that enables observation of the electron beam signal passing through a gas layer at atmospheric pressure is presented. An experimental setup consisting of an elec-tron gun (electron emitter, extraction, and focus electrodes), silicon nitride membrane, and a CMOS image sensor is described, as well as first image of the electron beam spot after passing through 400 µm of air at atmospheric pressure is presented.</abstract>
    <parentTitle language="eng">EUROSENSORS XXXVII ; 07.09.2025 - 10.09.2025 ; Wroclaw ; Poster I</parentTitle>
    <identifier type="doi">10.5162/EUROSENSORS2025/MP61</identifier>
    <enrichment key="opus.import.date">2026-01-12T14:01:30+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Michal Krysztof</author>
    <author>Kamil Baranowski</author>
    <author>Michal Zychla</author>
    <author>Matthias Hausladen</author>
    <author>Rupert Schreiner</author>
    <author>Aleksandr Knápek</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="DFGFachsystematik" number="1">Ingenieurwissenschaften</collection>
    <collection role="othforschungsschwerpunkt" number="">Materialien und Produktion</collection>
  </doc>
  <doc>
    <id>8510</id>
    <completedYear/>
    <publishedYear>2025</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>2</pageNumber>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Experimental method for investigation of the emission pattern characteristics of individual field emission tips using a CMOS image sensor</title>
    <abstract language="eng">The emission pattern characteristics of individual silicon field emission tips were investigated using a CMOS image sensor. The quality of the image was improved by spatial and temporal averaging, so that individual emission centers could be identified and their temporal changes investigated. By mapping the emission current onto the image, the distribution of the current density on the image sensor could be calculated.</abstract>
    <parentTitle language="eng">38th International Vacuum Nanoelectronics Conference (IVNC)</parentTitle>
    <identifier type="doi">10.1109/IVNC65669.2025.11121040</identifier>
    <enrichment key="ConferenceStatement">08-11 July 2025, Reykjavik, Iceland</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Mathias Bartl</author>
    <author>Matthias Hausladen</author>
    <author>Ali Asgharzade</author>
    <author>Philipp Buchner</author>
    <author>Michal Krysztof</author>
    <author>Alexandr Knápek</author>
    <author>Michael Bachmann</author>
    <author>Rupert Schreiner</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>CMOS image sensors</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Current density</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Nanoelectronics</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="DFGFachsystematik" number="1">Ingenieurwissenschaften</collection>
    <collection role="othforschungsschwerpunkt" number="">Materialien und Produktion</collection>
  </doc>
  <doc>
    <id>8563</id>
    <completedYear/>
    <publishedYear>2025</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>2</pageNumber>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Experimenal method for studying electron beams in gaseous environments using a CMOS image sensor</title>
    <abstract language="deu">Detecting and analyzing electron beams in atmospheric conditions remains a significant challenge due to scattering and absorption of electrons by gas molecules. In this work, a novel approach using a CMOS image sensor for real-time electron beam detection after its transmission through air is presented. The setup enables visualization of beam divergence, emission profiles, and dynamic behavior under atmospheric pressure. Presented results demonstrate the potential of CMOS image sensor for electron beam analysis in gaseous environment.</abstract>
    <parentTitle language="eng">38th International Vacuum Nanoelectronics Conference (IVNC)</parentTitle>
    <identifier type="doi">10.1109/IVNC65669.2025.11120851</identifier>
    <identifier type="isbn">979-8-3315-3705-0</identifier>
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    <author>Kamil Baranowski</author>
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    <author>Matthias Hausladen</author>
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    <title language="eng">Testing the performance of tungsten-graphite cathodes as MEMS Electron microscope electron source</title>
    <abstract language="eng">This work presents preliminary results of the performance testing of exfoliated graphene layers deposited on the nanotip of a tungsten field emission cathode. The obtained tungsten-graphite cathodes were then operated in a 3D-printed MEMS electron microscope testing model for later applications. The results were promising, where a maximum emission current of 50.2 μA was obtained with an extraction voltage of 1 kV and anode voltage of 3 kV.</abstract>
    <parentTitle language="eng">38th International Vacuum Nanoelectronics Conference (IVNC)</parentTitle>
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    <author>Daniel Burda</author>
    <author>Alexandr Knápek</author>
    <author>Michał Krysztof</author>
    <author>Kamil Baranowski</author>
    <author>Matthias Hausladen</author>
    <author>Rupert Schreiner</author>
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  </doc>
  <doc>
    <id>8559</id>
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    <publishedYear>2025</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
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    <pageLast/>
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    <title language="eng">Investigation on the influence of internal voltage drops on the emission behavior of silicon field emission arrays using CMOS image sensor</title>
    <abstract language="eng">In this paper we report on an improved measurement and analysis method for determining the emission current distribution of field emitter arrays with CMOS sensors. It can also be used for field emission arrays where not all surfaces of the emitters are at the same electrical potential (e.g. for p-doped Si tips, where a strong current saturation occurs). To demonstrate the functionality of this method, a n-doped field emission array was measured using a variable external series resistance. Brightness variations in emission spots were analyzed to re-calculate the known series resistances for comparison. The re-calculated value is in good agreement with the actual value of the resistance. This method offers a quantitative approach to assess internal voltage drop effects on field emission using optical readout</abstract>
    <parentTitle language="eng">38th International Vacuum Nanoelectronics Conference (IVNC)</parentTitle>
    <identifier type="doi">10.1109/IVNC65669.2025.11120937</identifier>
    <enrichment key="ConferenceStatement">08-11 July 2025, Reykjavik, Iceland</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Ali Asgharzade</author>
    <author>Mathias Bartl</author>
    <author>Matthias Hausladen</author>
    <author>Yang Chen</author>
    <author>Philipp Buchner</author>
    <author>Simon Edler</author>
    <author>Michael Bachmann</author>
    <author>Juncong She</author>
    <author>Rupert Schreiner</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emission imaging</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emission</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>CMOS sensor</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
    <collection role="DFGFachsystematik" number="1">Ingenieurwissenschaften</collection>
    <collection role="othforschungsschwerpunkt" number="">Materialien und Produktion</collection>
  </doc>
  <doc>
    <id>7069</id>
    <completedYear/>
    <publishedYear>2024</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>2</issue>
    <volume>42</volume>
    <type>article</type>
    <publisherName>AIP</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">High current field emission from Si nanowires on pillar structures</title>
    <abstract language="eng">We investigate the influence of the geometry and doping level on the performance of n-type silicon nanowire field emitters on silicon pillar structures. Therefore, multiple cathodes with 50 by 50 pillar arrays (diameter: 5 μm, height: 30 μm, spacing: 50 μm) were fabricated and measured in diode configuration. In the first experiment, we compared two geometry types using the same material. Geometry 1 is black silicon, which is a highly dense surface covering a forest of tightly spaced silicon needles resulting from self-masking during a plasma etching process of single crystal silicon. Geometry 2 are silicon nanowires, which are individual spaced-out nanowires in a crownlike shape resulting from a plasma etching process of single crystal silicon. In the second experiment, we compared two different silicon doping levels [n-type (P), 1–10 and &lt;0.005 Ω cm] for the same geometry. The best performance was achieved with lower doped silicon nanowire samples, emitting 2 mA at an extraction voltage of 1 kV. The geometry/material combination with the best performance was used to assemble an integrated electron source. These electron sources were measured in a triode configuration and reached onset voltages of about 125 V and emission currents of 2.5 mA at extraction voltages of 400 V, while achieving electron transmission rates as high as 85.0%.</abstract>
    <parentTitle language="eng">Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics</parentTitle>
    <identifier type="doi">10.1116/6.0003384</identifier>
    <identifier type="issn">2166-2754</identifier>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Philipp Buchner</author>
    <author>Matthias Hausladen</author>
    <author>Mathias Bartl</author>
    <author>Michael Bachmann</author>
    <author>Rupert Schreiner</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Doping</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Electron sources</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Nanowires</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Plasma processing</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Field emitter arrays</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Triodes</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Semiconductors</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlm">Schreiner, Rupert (Prof. Dr.), Zeitschriftenaufsätze - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>7582</id>
    <completedYear/>
    <publishedYear>2001</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>81</pageFirst>
    <pageLast>82</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Dynamic and spectral properties of red DFB lasers</title>
    <abstract language="eng">Summary form only given. Narrow linewidth GaInP/AlGaInP DFB lasers are promising light sources for spectroscopy, for optical data storage systems and for plastic optical fiber WDM applications. However, little is known about the dynamic behavior of red DFB lasers. In this paper, we report on the dynamic and spectral properties of those devices. The lasers were first characterized under cw operation at 25/spl deg/C. Threshold currents are /spl sim/14 mA (475 /spl mu/m length) and /spl sim/18 mA (900 /spl mu/m length). The lasers show stable single mode emission at 680 nm with a SMSR better than -25 dB. The spectral linewidth of the 900 /spl mu/m long devices was measured by using a scanning-Fabry-Perot interferometer.</abstract>
    <parentTitle language="eng">Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Technical Digest (IEEE Cat. No.01CH37170) ; Baltimore,  May 6 - 11, 2001 (Trends in optics and photonics series ; 56)</parentTitle>
    <identifier type="isbn">1-55752-662-1</identifier>
    <identifier type="doi">10.1109/CLEO.2001.947498</identifier>
    <identifier type="url">http://ieeexplore.ieee.org/document/947498/</identifier>
    <enrichment key="opus.import.date">2024-09-08T12:45:13+00:00</enrichment>
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    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Rupert Schreiner</author>
    <author>M. Mulot</author>
    <author>H. P. Gauggel</author>
    <author>H. Schweizer</author>
    <author>C. K. Laue</author>
    <author>R. Wallenstein</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
  </doc>
  <doc>
    <id>9051</id>
    <completedYear/>
    <publishedYear>2025</publishedYear>
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    <pageFirst/>
    <pageLast/>
    <pageNumber>4</pageNumber>
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    <publisherName>IEEE</publisherName>
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    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2026-04-02</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">On Chip Electron Gun Design Using Silicon Tip Field Emitter Array</title>
    <abstract language="eng">Silicon based silicon tip array emitter has developed at OTH Regensburg, Germany. This array emitter is the basis for development of a novel electron gun. This field emitter electron sources were fabricated using laser-micromachining technique followed by MEMS technology. In this work, the design and development of electron gun using complete silicon structure is reported. The goal of this work is to develop electron gun using less effort, easy and hassle free technique.</abstract>
    <parentTitle language="eng">2025 IEEE Microwaves, Antennas, and Propagation Conference (MAPCON), 14-18. Dezember  2025, Kochi, India</parentTitle>
    <identifier type="isbn">979-8-3315-3722-7</identifier>
    <identifier type="doi">10.1109/MAPCON65020.2025.11426578</identifier>
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    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Ranjan Kumar Barik</author>
    <author>Vikram Singh Rawat</author>
    <author>Subhrajit Manna</author>
    <author>Ayan Kumar Bandyopadhyay</author>
    <author>Matthias Hausladen</author>
    <author>Ali Asgharzade</author>
    <author>Rupert Schreiner</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
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  </doc>
  <doc>
    <id>8969</id>
    <completedYear/>
    <publishedYear>2025</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>6</issue>
    <volume>43</volume>
    <type>article</type>
    <publisherName>AVS</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">SiMiC: Context-aware silicon microstructure characterization using attention-based convolutional neural networks for field-emission tip analysis</title>
    <abstract language="eng">Accurate characterization of silicon microstructures is essential for advancing microscale fabrication, quality control, and device performance. Traditional analysis using scanning electron microscopy (SEM) often requires labor-intensive, manual evaluation of feature geometry, limiting throughput and reproducibility. In this study, we propose SiMiC: Context-aware Silicon Microstructure Characterization Using Attention-based Convolutional Neural Networks for Field-Emission Tip Analysis. By leveraging deep learning, our approach efficiently extracts morphological features—such as size, shape, and apex curvature—from SEM images, significantly reducing human intervention while improving measurement consistency. A specialized dataset of silicon-based field-emitter tips was developed, and a customized convolutional neural network architecture incorporating attention mechanisms was trained for multiclass microstructure classification and dimensional prediction. Comparative analysis with classical image processing techniques demonstrates that SiMiC achieves high accuracy while maintaining interpretability. The proposed framework establishes a foundation for data-driven microstructure analysis directly linked to field-emission performance, opening avenues for correlating emitter geometry with emission behavior and guiding the design of optimized cold-cathode and SEM electron sources. The related dataset and algorithm repository that could serve as a baseline in this area can be found at https://research.jingjietan.com/?q=SIMIC.</abstract>
    <parentTitle language="eng">Journal of Vacuum Science &amp; Technology B</parentTitle>
    <identifier type="doi">10.1116/6.0005068</identifier>
    <enrichment key="opus.import.date">2026-03-29T15:41:42+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Jing Jie Tan</author>
    <author>Rupert Schreiner</author>
    <author>Matthias Hausladen</author>
    <author>Ali Asgharzade</author>
    <author>Simon Edler</author>
    <author>Julian Bartsch</author>
    <author>Michael Bachmann</author>
    <author>Andreas Schels</author>
    <author>Ban-Hoe Kwan</author>
    <author>Danny Wee-Kiat Ng</author>
    <author>Yan-Chai Hum</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Field emitter arrays</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Quality assurance</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Convolutional neural network</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Deep learning</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Image processing</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Machine learning</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Cold cathodes</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Scanning electron microscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Electron sources</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Chemical elements</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlm">Schreiner, Rupert (Prof. Dr.), Zeitschriftenaufsätze - Labor für Mikrosensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
    <collection role="DFGFachsystematik" number="1">Ingenieurwissenschaften</collection>
    <collection role="othforschungsschwerpunkt" number="">Digitale Transformation</collection>
  </doc>
</export-example>
