<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>6454</id>
    <completedYear/>
    <publishedYear>2023</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>160</pageFirst>
    <pageLast>162</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Electron Beam Induced Growth of Carbon Nanotips on Tungsten and Silicon Fieldemitters</title>
    <abstract language="eng">In our experiments we grew electron emitting carbon nanostructures on tungsten tips. Subsequently, we transferred the growth process to pre-structured phosphorus-doped n-type silicon and obtained emitting carbon nanostructures directly grown on silicon. After growth of the nanostructures, the silicon field emitters showed increased emission currents of 76 nA at 1.1 kV (compared to 6 nA under the same conditions before growth).</abstract>
    <parentTitle language="eng">2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA</parentTitle>
    <identifier type="isbn">979-8-3503-0143-4</identifier>
    <identifier type="doi">10.1109/IVNC57695.2023.10188960</identifier>
    <enrichment key="opus.import.date">2023-08-21T08:29:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">true</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Fabian Hecht</author>
    <author>Florian Bauereiβ</author>
    <author>Josef Sellmair</author>
    <author>Philipp Buchner</author>
    <author>Matthias Hausladen</author>
    <author>Rupert Schreiner</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Behavioral sciences</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Nanostructures</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Carbon dioxide</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Current measurement</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Electron beams</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Tungsten</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>3757</id>
    <completedYear/>
    <publishedYear>2017</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>138</pageFirst>
    <pageLast>139</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Field emission properties of p-type silicon tips decorated with tungsten nanoparticles</title>
    <abstract language="eng">An array of conical-shaped p-type silicon tips was fabricated by using reactive ion etching and sharpening oxidation. The apex of each tip was decorated by a tungsten hemispherical nanoparticle. Field emission properties of the tips were measured by a tungsten-needle anode positioned above the tip apex. Tips decorated with tungsten nanoparticles demonstrated a smaller saturation region in current-voltage characteristics compared to the pristine tips. An emission activation process, which consisted in sudden current increase at certain value of applied voltage, was observed for the decorated silicon tips. This behavior was explained by the formation of vertical protrusions extending from the metal particles revealed by scanning electron microscopy after field emission experiments.</abstract>
    <parentTitle language="eng">2017 30th International Vacuum Nanoelectronics Conference (IVNC),  10-14 July 2017, Regensburg, Germany</parentTitle>
    <identifier type="doi">10.1109/IVNC.2017.8051580</identifier>
    <enrichment key="opus.import.date">2022-04-28T19:21:54+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Victor I. Kleshch</author>
    <author>Pavel Serbun</author>
    <author>Anton Orekhov</author>
    <author>Dirk Lützenkirchen-Hecht</author>
    <author>Alexander N. Obraztsov</author>
    <author>Christian Prommesberger</author>
    <author>Christoph Langer</author>
    <author>Rupert Schreiner</author>
    <author>Dirk Lutzenkirchen-Hecht</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Current measurement</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emission</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Ions</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Iron</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>metal nanoparticles</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>nanoparticles</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>p-type silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Scanning electron microscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Tungsten</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>1033</id>
    <completedYear/>
    <publishedYear>2017</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>12</issue>
    <volume>64</volume>
    <type>article</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Regulation of the Transmitted Electron Flux in a Field-Emission Electron Source Demonstrated on Si Nanowhisker Cathodes</title>
    <abstract language="eng">We report on a method to stabilize the transmitted electron flux in a field-emission electron source using an external regulation circuit. The electron source was realized with an array of silicon (Si) nanowhiskers on the top of elongated pillar structures, a mica spacer, and an extraction grid made of Si. As for most applications, the emitted electron current from the cathode is not as crucial as the transmitted electron flux through the extraction grid toward the anode. We investigated a method which allows the regulation directly by the emitted electron flux and not merely on the cathode current. By using this method, we were able to stabilize the emitted electron flux of our electron source down to values below 1%. Simultaneously, it was shown that there is the possibility to stabilize the influencing value in the real application as well. The effectiveness of this method was demonstrated successfully with an X-ray source setup. The measured X-ray photon count rate was stabilized to a standard deviation of 0.30% at a pressure of 1 × 10 -7 mbar. Even in harsh environment of 2 × 10 -5 mbar, a stabilization of the X-ray photon count rate down to a value of 0.63% was achieved.</abstract>
    <parentTitle language="eng">IEEE Transactions on Electron Devices</parentTitle>
    <identifier type="doi">10.1109/TED.2017.2763239</identifier>
    <identifier type="issn">5128-5133</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Christian Prommesberger</author>
    <author>Michael Bachmann</author>
    <author>Felix Düsberg</author>
    <author>Christoph Langer</author>
    <author>Robert Damian Ławrowski</author>
    <author>Martin Hofmann</author>
    <author>Andreas Pahlke</author>
    <author>Rupert Schreiner</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Cathodes</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Nanostructured devices</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Current measurement</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Photonics</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Electron sources</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Emissions</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Voltage measurement</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlm">Schreiner, Rupert (Prof. Dr.), Zeitschriftenaufsätze - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>1134</id>
    <completedYear/>
    <publishedYear>2017</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>66</pageFirst>
    <pageLast>67</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-05</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Control of the electron source current</title>
    <abstract language="eng">A control circuit to stabilize the flux of electrons transmitted through an extractor electrode is presented. By controlling the emission current a fluctuation with a standard deviation of 0.015% is observed. However, the achievable stability of the transmitted electron current is limited due to a variation of the extraction grid current ratio showing a standard deviation of 4.33%. By regulating the difference of the emission current and the extraction grid current an improved stability of the transmitted electron current down to a standard deviation of 0.280% is observed. Even with operation at 2 × 10 -5 mbar a standard deviation of 0.558% is achieved.</abstract>
    <parentTitle language="deu">International Vacuum Nanoelectronics Conference (IVNC), 30th, 2017, Regensburg</parentTitle>
    <identifier type="doi">10.1109/IVNC.2017.8051550</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <author>Michael Bachmann</author>
    <author>Florian Dams</author>
    <author>Felix Düsberg</author>
    <author>Martin Hofmann</author>
    <author>Andreas Pahlke</author>
    <author>Christoph Langer</author>
    <author>Robert Damian Ławrowski</author>
    <author>Christian Prommesberger</author>
    <author>Rupert Schreiner</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Standards</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Circuit stability</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Power system stability</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Current measurement</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Voltage measurement</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Electron sources</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Stability analysis</value>
    </subject>
    <collection role="ddc" number="621">Angewandte Physik</collection>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>3699</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>222</pageFirst>
    <pageLast>223</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">High aspect ratio silicon tip cathodes for application in field emission electron sources</title>
    <abstract language="eng">Precisely aligned arrays of sharp tip structures on top of elongated pillars were realized by using an improved fabrication process including an additional inductively-coupled-plasma reactive-ion etching step. Arrays of n-type and p-type silicon with 271 tips have been fabricated and investigated. Those structures have a total height of 5–6 µm and apex radii less than 20nm. Integral field emission measurements of the arrays yielded low onset-fields in the range of 8–12V=µm and field enhancement factors between 300 and 700. The I-E curves of n-type structures showed the usual Fowler-Nordheim behaviour, whereas p-type structures revealed a significant saturation region due to the limited number of electrons in the conduction band and a further carrier depletion effect caused by the pillar. The maximum integral current in the saturation region was 150 nA at fields above 30V=µm. An excellent stability of the emission current of less than ± 2% fluctuation was observed in the saturation region. For n-type Si a maximum integral current of 10 µA at 24V=µm and an average current stability with a fluctuation of ± 50% were measured.</abstract>
    <parentTitle language="eng">2014 27th International Vacuum Nanoelectronics Conference (IVNC), 6-10 July 2014, Engelberg, Switzerland</parentTitle>
    <identifier type="doi">10.1109/IVNC.2014.6894824</identifier>
    <enrichment key="opus.import.date">2022-04-28T18:45:44+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Christoph Langer</author>
    <author>Robert Damian Ławrowski</author>
    <author>Christian Prommesberger</author>
    <author>Florian Dams</author>
    <author>Pavel Serbun</author>
    <author>Michael Bachmann</author>
    <author>Günter Müller</author>
    <author>Rupert Schreiner</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Current measurement</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Etching</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>FABRICATION</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emission</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emitter array</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>GEOMETRY</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Iron</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Sensor arrays</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon tip</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>3756</id>
    <completedYear/>
    <publishedYear>2015</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>192</pageFirst>
    <pageLast>193</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Comparison of integral and local field-emission properties of Mo-coated p-Si tip arrays</title>
    <abstract language="eng">Silicon tip arrays were fabricated by means of reactive ion etching followed by oxidation for final sharpening and molybdenum thin film coating. The field-emission (FE) properties of these Mo-coated p-Si tip arrays were systemically investigated by different measurement techniques. Integral measurements in diode configuration yielded a turn-on field (for 1 nA) of 22 V/μm and nearly stable FE currents up to 6.6 μA at 38 V/μm. The effective field enhancements factor extracted from the FN plots is about 180. Detailed investigations of these FE arrays were also performed by means of field emission scanning microscopy combined with electron microscopy. A rather limited efficiency of the tips (50% at 1500 V) and FE homogeneity (180 nA at 700 V) might be correlated with the varying morphology of the tips and the presence of oxides. Local I-V measurements of selected single tips revealed both activation and deactivation effects, which finally resulted in nearly reproducible I-V curves. Current stability measurements at a constant voltage showed rather large fluctuations (0.1-1 μA) of the FE current, which could be reduced up to 1.7% by using of a PID-regulated voltage source. SEM images showed unchanged tip shape after the current processing.</abstract>
    <parentTitle language="eng">2015 28th International Vacuum Nanoelectronics Conference (IVNC), 13-17 July 2015, Guangzhou, China</parentTitle>
    <identifier type="doi">10.1109/IVNC.2015.7225579</identifier>
    <enrichment key="opus.import.date">2022-04-28T19:21:54+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Christian Prommesberger</author>
    <author>Christoph Langer</author>
    <author>Robert Damian Ławrowski</author>
    <author>F. Muller</author>
    <author>Florian Dams</author>
    <author>Rupert Schreiner</author>
    <author>Pavel Serbun</author>
    <author>Günter Müller</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>CATHODES</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Coatings</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Current measurement</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emission</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Iron</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Mo-coated</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>p-Si tip</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Scanning electron microscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>tip arrays</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Vacuum technology</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
  </doc>
  <doc>
    <id>3703</id>
    <completedYear/>
    <publishedYear>2015</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>164</pageFirst>
    <pageLast>165</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Gated p-Si field emitter arrays for sensor applications</title>
    <abstract language="eng">We report on gated p-type Si-tip array cathodes for implementation into field emission electron sources for sensor applications. Arrays of 16 and 100 tips with tip heights of 3 μm and tip radii below 30 nm with integrated gate electrodes concentrically positioned 2 μm below the tip apexes were fabricated using an improved process, which leads to an enhanced isolation layer quality with sufficient breakdown field strengths and low leakage currents. Integral measurements with a fixed grid potential of 400 V showed emission currents up to 35 μA for 100 tips at a cathode voltage of 150 V and an almost negligible parasitic gate current. The array with 16 p-type Si-tips showed a significant stabilization of the emission current in the range of 0.3 - 0.4 μA, for cathode voltages between 90 V and 150 V. The current fluctuation in this saturation regime was measured for 10 minutes and a value of less than ± 1% was observed. No degradation of the cathode was found after 6 hours of operation at a constant cathode voltage of 100 V and a constant grid voltage of 400 V.</abstract>
    <parentTitle language="eng">2015 28th International Vacuum Nanoelectronics Conference (IVNC)</parentTitle>
    <identifier type="doi">10.1109/IVNC.2015.7225567</identifier>
    <enrichment key="opus.import.date">2022-04-28T18:45:44+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Christian Prommesberger</author>
    <author>Christoph Langer</author>
    <author>Robert Damian Ławrowski</author>
    <author>Florian Dams</author>
    <author>Rupert Schreiner</author>
    <author>Robert Damian Ławrowski</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>CATHODES</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Current measurement</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Current stabilization</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emission</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>integrated gate-electrode</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Iron</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Logic gates</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>semiconductor</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Semiconductor device measurement</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon tip array</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>3772</id>
    <completedYear/>
    <publishedYear>2015</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>104</pageFirst>
    <pageLast>105</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Enhanced field emission from p-doped black silicon on pillar structures</title>
    <abstract language="eng">Aligned square arrays of black silicon (b-Si) on top of pillars were fabricated on p-type silicon substrate by a deep-etching step combined with a b-Si process. Two 10×10 arrays with pillar heights of 8 μm and 20 μm and one b-Si reference sample without pillars were investigated. Integral field emission (FE) measurements of the arrays yielded rather low onset-fields between 6.4 V/μm and 13.5 V/μm and field enhancement factors between 430 and 800. The I-V curves showed typical Fowler-Nordheim behavior for low fields, whereas a saturation region was observed at higher fields. The maximum integral current in the saturation region was 8 μA at a field of 20 V/μm. The stability of the emission current was investigated over 3 hours and revealed moderate fluctuations of ± 8% in the saturation region. Voltage scans showed well-aligned FE from nearly all pillars.</abstract>
    <parentTitle language="eng">2015 28th International Vacuum Nanoelectronics Conference (IVNC), 13-17 July 2015, Guangzhou, China</parentTitle>
    <identifier type="doi">10.1109/IVNC.2015.7225547</identifier>
    <enrichment key="opus.import.date">2022-04-28T19:28:04+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Christoph Langer</author>
    <author>Christian Prommesberger</author>
    <author>Robert Damian Ławrowski</author>
    <author>F. Müller</author>
    <author>Rupert Schreiner</author>
    <author>Pavel Serbun</author>
    <author>Günter Müller</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>black silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>CATHODES</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Current measurement</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Etching</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>FABRICATION</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emission</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emitter array</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Iron</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Vacuum technology</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>3755</id>
    <completedYear/>
    <publishedYear>2015</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>204</pageFirst>
    <pageLast>205</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Stability investigation of high aspect ratio n-type silicon field emitter arrays</title>
    <abstract language="eng">Electron sources based on silicon field emitter arrays, produced in processes based on semiconductor technology, are good candidates for a miniaturized X-ray source. A key parameter for this application is the stability of the X-ray photon flux and, thus, the emission current. In the present work we have investigated the influence of the residual gas pressure and a resistor in series on the emission stability of a high aspect ratio n-type silicon emitter array with hybrid extraction electrode. An increase of current fluctuations was found for pressures above 10-6 mbar. High resistances in series to the emitter array alter the emission characteristics, but greatly suppress spikes in the emission current and improve its stability. This, however, strongly depends on the bias point. The field enhancement factor is not affected by the resistance. In a long term measurement the emission current was found to be constant after an initial phase of degradation.</abstract>
    <parentTitle language="eng">2015 28th International Vacuum Nanoelectronics Conference (IVNC), 13-17 July 2015, Guangzhou, China</parentTitle>
    <identifier type="doi">10.1109/IVNC.2015.7225584</identifier>
    <enrichment key="opus.import.date">2022-04-28T19:21:54+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Michael Bachmann</author>
    <author>Florian Dams</author>
    <author>F. Düsberg</author>
    <author>Martin Hofmann</author>
    <author>Andreas Pahlke</author>
    <author>Christoph Langer</author>
    <author>Robert Damian Ławrowski</author>
    <author>Christian Prommesberger</author>
    <author>Rupert Schreiner</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Current measurement</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>emission current stability</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emitter array</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Field emitter arrays</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RESISTANCE</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Resistors</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>semiconductor field emission</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon tips</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Stability analysis</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Thermal stability</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>XRF spectroscopy</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>5402</id>
    <completedYear/>
    <publishedYear>2012</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>2</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace>Piscataway, N.J.</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Scaling of the field emission current from B-doped Si-tip arrays</title>
    <abstract language="eng">We have fabricated a test chip with various hexagonal arrays of B-doped Si tips (height ~ 3 μm, apex radius &lt;; 30 nm, number 1-4447, resistivity 4 Ωcm, 100 orientation) in triangular arrangement (pitch 10 μm, density 1.16×10 6 cm -2 ) in order to systematically investigate the field emission current scaling with the number N of tips. Regulated voltage scans for 1 nA revealed rather efficient emission from nearly all tips of the arrays at an average field of 15 V/μm. The expected current plateau was always obtained at fields around 20 V/μm, but its width strongly increased with N. In this carrier depletion range, the single tip provided a much higher stability (&lt;; 5%) of the current (2-3 nA) than at lower (&gt;; 50 %) and higher currents (&gt;; 30%). Integral current measurements of the hexagonal arrays resulted in a statistically improved current stability (&lt;; 1%) but only a weak increase of the total current with N 0.28 yet. These results will be discussed with respect to the remaining inhomogeneity of the tips.</abstract>
    <parentTitle language="eng">25th International Vacuum Nanoelectronics Conference (IVNC) ; Jeju, Korea (South), 09.07.2012 - 13.07.2012</parentTitle>
    <identifier type="isbn">978-1-4673-1984-3</identifier>
    <identifier type="doi">10.1109/IVNC.2012.6316965</identifier>
    <identifier type="isbn">978-1-4673-1983-6</identifier>
    <identifier type="isbn">978-1-4673-1982-9</identifier>
    <identifier type="issn">2380-6311</identifier>
    <identifier type="issn">2164-2370</identifier>
    <enrichment key="opus.import.date">2022-08-24T10:21:08+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">true</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Pavel Serbun</author>
    <author>Aliaksandr Navitski</author>
    <author>Günter Müller</author>
    <author>Rupert Schreiner</author>
    <author>Christian Prommesberger</author>
    <author>Christoph Langer</author>
    <author>Florian Dams</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Anodes</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>B-doped</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>boron</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Current measurement</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>current scaling</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>electron field emission</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>elemental semiconductors</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emitter arrays</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Iron</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Nonhomogeneous media</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Voltage control</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>3749</id>
    <completedYear/>
    <publishedYear>2015</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>106</pageFirst>
    <pageLast>107</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Field emission from surface textured GaN with buried double-heterostructures</title>
    <abstract language="eng">In this contribution we report on field emission (FE) cathodes based on thin-film LED-technology and surface texturing. The FE cathode can be used both as an n-GaN cathode with an electrical contact at the top side metallization as well as a pn-GaN diode contacting only the p-GaN layer at the bottom side of the structure. The local and integral FE properties of the textured surface of the LED structure were investigated. For n-GaN an integral emission current up to 1.0 μA at an electric field of 19 V/μm was achieved. The pn-GaN diode measurements showed an integral current saturation behavior with two orders of magnitude lower FE currents. Regulated voltage scans obtained by FE scanning microscopy revealed a well-distributed emission over the whole cathode area. Measurements under pulsed tunable laser illumination and moderate electric fields indicated charge carrier generation in the buried double-heterostructures at photon energies below 3.5 eV besides normal photoemission above 4.1 eV.</abstract>
    <parentTitle language="eng">2015 28th International Vacuum Nanoelectronics Conference (IVNC), 13-17 July 2015, Guangzhou, China</parentTitle>
    <identifier type="doi">10.1109/IVNC.2015.7225548</identifier>
    <enrichment key="opus.import.date">2022-04-28T19:21:54+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Robert Damian Ławrowski</author>
    <author>Christoph Langer</author>
    <author>Christian Prommesberger</author>
    <author>Rupert Schreiner</author>
    <author>Stephan Mingels</author>
    <author>Vitali Porshyn</author>
    <author>Pavel Serbun</author>
    <author>Günter Müller</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>CATHODES</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Current measurement</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Electric fields</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emission</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Gallium nitride</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>GaN</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Iron</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Light emitting diodes</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>photoemission</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Surface texture</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>2667</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>2</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">A novel current dependent field emission performance test</title>
    <abstract language="eng">A current dependent performance test for comparison of different field emitter arrays is introduced. Statistical analysis is enabled due to a short measurement time and as a main feature the electric field shift, comparable to the degradation of the emitter is examined. Significance of the test method is shown by a comparison of field emitter arrays with different doping levels.</abstract>
    <parentTitle language="eng">2021 34th International Vacuum Nanoelectronics Conference (IVNC): 5-9 July 2021, Lyon, France</parentTitle>
    <identifier type="doi">10.1109/IVNC52431.2021.9600695</identifier>
    <enrichment key="opus.import.date">2022-02-04T08:58:18+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Florian Herdl</author>
    <author>Michael Bachmann</author>
    <author>Dominik Wohlfartsstätter</author>
    <author>Felix Düsberg</author>
    <author>Markus Dudeck</author>
    <author>Magdalena Eder</author>
    <author>Manuel Meyer</author>
    <author>Andreas Pahlke</author>
    <author>Simon Edler</author>
    <author>Andreas Schels</author>
    <author>Walter Hansch</author>
    <author>Rupert Schreiner</author>
    <author>Dominik Wohlfartsstatter</author>
    <author>Felix Dusberg</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Current measurement</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Field emitter arrays</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Statistical analysis</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Systematics</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Time measurement</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Tools</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Vacuum systems</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>3704</id>
    <completedYear/>
    <publishedYear>2017</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>120</pageFirst>
    <pageLast>121</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Field emission characterization of in-situ deposited metallic nanocones</title>
    <abstract language="eng">An in-situ fabrication technique based on ion track etched template electrodeposition of metallic nanocones was used for the production of field emitter cathodes. Gold nanocones with a height of 24 microns, a base diameter between 3 to 4 microns and a tip diameter below 300 nanometers were deposited on a circular electrode with a diameter of 2.5 mm. The integral field emission (FE) measurements of samples with cone densities of 6 · 104 cones/cm2 (sample A) and 1 · 106 cones/cm2 (sample B) yielded in a maximum current of 37.5 μA at an applied field of 12.5 V/μm for sample A and 29.1 μA at 9.4 V/μm for sample B. The stability of emission current was investigated for over 48 hours and no degradation was observed.</abstract>
    <parentTitle language="eng">2017 30th International Vacuum Nanoelectronics Conference (IVNC), 10-14 July 2017, Regensburg, Germany</parentTitle>
    <identifier type="doi">10.1109/IVNC.2017.8051571</identifier>
    <enrichment key="opus.import.date">2022-04-28T18:45:44+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Johannes Bieker</author>
    <author>Farough Roustaie</author>
    <author>Helmut F. Schlaak</author>
    <author>Christoph Langer</author>
    <author>Rupert Schreiner</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>CATHODES</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Current measurement</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>FABRICATION</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emission</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ion track template</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Ions</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Iron</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>nanocones</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Vacuum technology</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Voltage measurement</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
</export-example>
