<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>1165</id>
    <completedYear/>
    <publishedYear>1991</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>489</pageFirst>
    <pageLast>491</pageLast>
    <pageNumber/>
    <edition/>
    <issue>9</issue>
    <volume>12</volume>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-06</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">A One-Dimensional Analytical Model for the Dual-Gate-Controlled Thin-Film SOI MOSFET</title>
    <abstract language="eng">A one-dimensional analytical model for dual-gate-controlled SOI MOSFETs is presented and applied to a stacked p-channel MOSFET fabricated by epitaxial lateral overgrowth (ELO). The authors found and modeled a nonlinear dependence of front-gate threshold voltage on back-gate voltage if threshold is defined by a constant current instead of a constant silicon-surface potential. It is demonstrated by comparison of subthreshold slopes that surface potentials are not pinned to the onset of strong inversion or accumulation. Accurate one-dimensional modeling is a necessity for device characterization and a precondition for general SOI models for circuit simulation.&lt; &gt;</abstract>
    <parentTitle language="eng">IEEE Electron Device Letters</parentTitle>
    <identifier type="doi">10.1109/55.116927</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <author>Martin J. W. Schubert</author>
    <author>Bernd Höfflinger</author>
    <author>René P. Zingg</author>
    <collection role="institutes" number="FakEI">Fakultät Elektro- und Informationstechnik</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Elektronik</collection>
  </doc>
  <doc>
    <id>1577</id>
    <completedYear/>
    <publishedYear>1991</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>237</pageFirst>
    <pageLast>240</pageLast>
    <pageNumber/>
    <edition/>
    <issue>1-4</issue>
    <volume>15</volume>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">1D Modeling of SOI MOSFETs Using Distinct Quasi-Fermi Potentials</title>
    <abstract language="eng">Distinct electron and hole quasi-Fermi potentials, øf,n and øf,p, are included into a one-dimensional SOI MOSFET model that accounts for finite inversion and depletion layer thicknesses. The inclusion of øf,n, øf,p in the nonlinear analytical model is demonstrated to describe phenomena like kink effect and the multistable-charge-controlled-memory effect (MCCM) in SOI MOSFETs. The calculation of øf,p(t) depends on the device history and generation/recombination rates.</abstract>
    <parentTitle language="eng">Microelectronic Engineering</parentTitle>
    <identifier type="doi">10.1016/0167-9317(91)90221-X</identifier>
    <enrichment key="ConferenceStatement">21st European Solid State Device Research Conference (Essderc '91), 16-19 September 1991, Montreux, Suisse</enrichment>
    <author>Martin J. W. Schubert</author>
    <author>Bernd Höfflinger</author>
    <author>D. Schröder</author>
    <author>René P. Zingg</author>
    <collection role="institutes" number="FakEI">Fakultät Elektro- und Informationstechnik</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Elektronik</collection>
  </doc>
</export-example>
