<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>5936</id>
    <completedYear/>
    <publishedYear>2002</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>101</pageFirst>
    <pageLast>105</pageLast>
    <pageNumber/>
    <edition/>
    <issue>1-3</issue>
    <volume>89</volume>
    <type>article</type>
    <publisherName>Elsevier</publisherName>
    <publisherPlace>New York, NY</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2023-04-11</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Laterally aligned Ge/Si islands: a new concept for faster field-effect transistors</title>
    <abstract language="eng">Self-assembled and coherently strained Ge dots were grown on a Si/SiGe superlattice, which was deposited on a flat Si(001) substrate surface patterned with a regular array of straight trenches. The superlattice translates the surface modulation of the substrate into a strain-field modulation, which causes the Ge dots on its surface to form along straight lines above the buried trenches. This approach provides self-assembled Ge dots with excellent lateral periodicity, which might be useful for fabricating dot-based field-effect-transistors (DotFETs). Here, we propose the concept of a modulation-doped p-channel DotFET (p-MOD-DotFET). The p-MOD-DotFET relies on embedded Ge-rich nanostructures, which provide p-channels through the Ge-rich dots. A high Ge concentration in the dots is desirable in order to exploit the high hole mobility of Ge-rich material. We show that the commonly observed Si–Ge intermixing during Si capping of Ge dots can be suppressed by overgrowing the islands at low temperature.</abstract>
    <parentTitle language="eng">Materials Science and Engineering B</parentTitle>
    <identifier type="issn">1873-4944</identifier>
    <identifier type="doi">10.1016/S0921-5107(01)00810-8</identifier>
    <identifier type="issn">0921-5107</identifier>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Oliver G. Schmidt</author>
    <author>Ullrich Denker</author>
    <author>Michael W. Dashiell</author>
    <author>Neng Yun Jin-Phillipp</author>
    <author>Karl Eberl</author>
    <author>Rupert Schreiner</author>
    <author>Hedwig Gräbeldinger</author>
    <author>Heinz C. Schweizer</author>
    <author>Silke H. Christiansen</author>
    <author>Frank Ernst</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Field-effect transistor</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Self-assembly islands</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>CMOS</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>MOSFET</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>MOFDET alignment</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Modulation</value>
    </subject>
    <collection role="ddc" number="5">Naturwissenschaften und Mathematik</collection>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="persons" number="schreinerlm">Schreiner, Rupert (Prof. Dr.), Zeitschriftenaufsätze - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
</export-example>
