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  <doc>
    <id>799</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>80</pageNumber>
    <edition/>
    <issue/>
    <volume/>
    <type>periodicalpart</type>
    <publisherName/>
    <publisherPlace>Regensburg</publisherPlace>
    <creatingCorporation>Ostbayerische Technische Hochschule Regensburg</creatingCorporation>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Forschungsbericht 2013</title>
    <identifier type="urn">urn:nbn:de:bvb:898-opus4-7990</identifier>
    <identifier type="doi">10.35096/othr/pub-799</identifier>
    <author>Josef Beimler</author>
    <author>Caroline Leißl</author>
    <author>Lena Ebner</author>
    <author>Michael Elsner</author>
    <author>Gerhard Mühlbauer</author>
    <author>Dieter Kohlert</author>
    <author>Martin J. W. Schubert</author>
    <author>Andreas P. Weiß</author>
    <author>Michael Sterner</author>
    <author>Thomas Raith</author>
    <author>Martin Afranseder</author>
    <author>Tobias Krapf</author>
    <author>Jürgen Mottok</author>
    <author>Christian Siemers</author>
    <author>Benjamin Großmann</author>
    <author>Johannes Höcherl</author>
    <author>Thomas Schlegl</author>
    <author>Ralph Schneider</author>
    <author>Johannes Milaev</author>
    <author>Christina Rampelt</author>
    <author>Christian Roduner</author>
    <author>Christoph Glowa</author>
    <author>Christoph Bachl</author>
    <author>Claus Schliekmann</author>
    <author>Alfons Gnan</author>
    <author>Martin Grill</author>
    <author>Karl Ruhland</author>
    <author>Thomas Piehler</author>
    <author>Daniel Friers</author>
    <author>Harald Wels</author>
    <author>Kenny Pflug</author>
    <author>Markus Kucera</author>
    <author>Thomas Waas</author>
    <author>Felix Schlachetzki</author>
    <author>Sandra Boy</author>
    <author>Josef Pemmerl</author>
    <author>Alexander Leis</author>
    <author>Andreas F.X. Welsch</author>
    <author>Franz Graf</author>
    <author>Gerhard Zenger</author>
    <author>Klaus Volbert</author>
    <author>Thomas Waas</author>
    <author>Stefanie Scherzinger</author>
    <author>Meike Klettke</author>
    <author>Uta Störl</author>
    <author>C. Heyl</author>
    <author>A. Boldenko</author>
    <author>Gareth J. Monkman</author>
    <author>Richard Kujat</author>
    <author>Ulrich Briem</author>
    <author>Stefan Hierl</author>
    <author>Sebastian Talbot</author>
    <author>Anton Schmailzl</author>
    <author>Robert Damian Ławrowski</author>
    <author>Christian Prommesberger</author>
    <author>Christoph Langer</author>
    <author>Florian Dams</author>
    <author>Rupert Schreiner</author>
    <author>Piergiorgio Valentino</author>
    <author>Marco Romano</author>
    <author>Ingo Ehrlich</author>
    <author>Franco Furgiuele</author>
    <author>Norbert Gebbeken</author>
    <author>Michael Eisenried</author>
    <author>Bastian Jungbauer</author>
    <author>Albert Hutterer</author>
    <author>Michael Bauhuber</author>
    <author>Andreas Mikrievskij</author>
    <author>Monika Argauer</author>
    <author>Helmut Hummel</author>
    <author>Alfred Lechner</author>
    <author>Thomas Liebetruth</author>
    <author>Michael Schumm</author>
    <author>Saskia Joseph</author>
    <author>Michael Reschke</author>
    <author>Alexander Soska</author>
    <author>Irmgard Schroll-Decker</author>
    <author>Michael Putzer</author>
    <author>John Rasmussen</author>
    <author>Sebastian Dendorfer</author>
    <author>Tim Weber</author>
    <author>Amir Andreas Al-Munajjed</author>
    <author>Gijsbertus Jacob Verkerke</author>
    <author>Tobias Renkawitz</author>
    <author>Sonja Haug</author>
    <author>Clarissa Rudolph</author>
    <author>Annika Zeitler</author>
    <author>Simon Schaubeck</author>
    <author>Oliver Steffens</author>
    <author>Christian Rechenauer</author>
    <author>Thekla Schulz-Brize</author>
    <author>Florian Fleischmann</author>
    <author>Wolfgang Kusterle</author>
    <author>Anne Beer</author>
    <author>Bernd Wagner</author>
    <author>Thomas Neidhart</author>
    <series>
      <title>Forschungsberichte der OTH Regensburg</title>
      <number>2013</number>
    </series>
    <collection role="institutes" number="HL">Hochschulleitung/Hochschulverwaltung</collection>
    <collection role="othpublikationsherkunft" number="">Von der OTH Regensburg herausgegeben</collection>
    <collection role="institutes" number="IAFW">Zentrum für Forschung und Transfer (ZFT ab 2024; vorher: IAFW)</collection>
    <collection role="persons" number="sternerfenes">Sterner, Michael (Prof. Dr.) - FENES / Forschungsgruppe Energiespeicher</collection>
    <thesisPublisher>Ostbayerische Technische Hochschule Regensburg</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-oth-regensburg/files/799/Forschungsbericht_2013.pdf</file>
  </doc>
  <doc>
    <id>1162</id>
    <completedYear/>
    <publishedYear>1989</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-06</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Extending EDIF for Technology Data</title>
    <parentTitle language="eng">EDIF World Conference, 1989, San Jose, CA, USA, 11.-14. September</parentTitle>
    <enrichment key="opus.source">publish</enrichment>
    <author>Martin J. W. Schubert</author>
    <author>J. Blödel</author>
    <author>P. Conradi</author>
    <author>P. Lafosse</author>
    <author>W. Nebel</author>
    <author>S. Neusser</author>
    <author>M. Ryba</author>
    <author>D. Schröder</author>
    <collection role="institutes" number="FakEI">Fakultät Elektro- und Informationstechnik</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Elektronik</collection>
  </doc>
  <doc>
    <id>1383</id>
    <completedYear/>
    <publishedYear>2017</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>periodicalpart</type>
    <publisherName/>
    <publisherPlace>Regensburg</publisherPlace>
    <creatingCorporation>Ostbayerische Technische Hochschule Regensburg</creatingCorporation>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Forschungsbericht 2017</title>
    <identifier type="isbn">978-3-9818209-3-5</identifier>
    <identifier type="urn">urn:nbn:de:bvb:898-opus4-13835</identifier>
    <identifier type="doi">10.35096/othr/pub-1383</identifier>
    <author>Karsten Weber</author>
    <author>Sebastian Dendorfer</author>
    <author>Franz Süß</author>
    <author>Simone Kubowitsch</author>
    <author>Thomas Schratzenstaller</author>
    <author>Sonja Haug</author>
    <author>Christa Mohr</author>
    <author>Hans Kiesl</author>
    <author>Jörg Drechsler</author>
    <author>Markus Westner</author>
    <author>Jörn Kobus</author>
    <author>Martin J. W. Schubert</author>
    <author>Stefan Zenger</author>
    <author>Alexander Pietsch</author>
    <author>Josef Weiß</author>
    <author>Sebastian Hinterseer</author>
    <author>Roland Schieck</author>
    <author>Stefanie Scherzinger</author>
    <author>Meike Klettke</author>
    <author>Andreas Ringlstetter</author>
    <author>Uta Störl</author>
    <author>Tegawendé F. Bissyandé</author>
    <author>Achim Seeburger</author>
    <author>Timo Schindler</author>
    <author>Ralf Ramsauer</author>
    <author>Jan Kiszka</author>
    <author>Andreas Kölbl</author>
    <author>Daniel Lohmann</author>
    <author>Wolfgang Mauerer</author>
    <author>Johannes Maier</author>
    <author>Ulrike Scorna</author>
    <author>Christoph Palm</author>
    <author>Alexander Soska</author>
    <author>Jürgen Mottok</author>
    <author>Andreas Ellermeier</author>
    <author>Daniel Vögele</author>
    <author>Stefan Hierl</author>
    <author>Ulrich Briem</author>
    <author>Knut Buschmann</author>
    <author>Ingo Ehrlich</author>
    <author>Christian Pongratz</author>
    <author>Benjamin Pielmeier</author>
    <author>Quirin Tyroller</author>
    <author>Gareth J. Monkman</author>
    <author>Franz Gut</author>
    <author>Carina Roth</author>
    <author>Peter Hausler</author>
    <author>Rudolf Bierl</author>
    <author>Christian Prommesberger</author>
    <author>Robert Damian Ławrowski</author>
    <author>Christoph Langer</author>
    <author>Rupert Schreiner</author>
    <author>Yifeng Huang</author>
    <author>Juncong She</author>
    <author>Andreas Ottl</author>
    <author>Walter Rieger</author>
    <author>Agnes Kraml</author>
    <author>Thomas Poxleitner</author>
    <author>Simon Hofer</author>
    <author>Benjamin Heisterkamp</author>
    <author>Maximilian Lerch</author>
    <author>Nike Sammer</author>
    <author>Olivia Golde</author>
    <author>Felix Wellnitz</author>
    <author>Sandra Schmid</author>
    <author>Claudia Muntschick</author>
    <author>Wolfgang Kusterle</author>
    <author>Ivan Paric</author>
    <author>Oliver Brückl</author>
    <author>Matthias Haslbeck</author>
    <author>Ottfried Schmidt</author>
    <author>Peter Schwanzer</author>
    <author>Hans-Peter Rabl</author>
    <author>Michael Sterner</author>
    <author>Franz Bauer</author>
    <author>Sven Steinmann</author>
    <author>Fabian Eckert</author>
    <author>Andreas Hofrichter</author>
    <series>
      <title>Forschungsberichte der OTH Regensburg</title>
      <number>2017</number>
    </series>
    <subject>
      <language>deu</language>
      <type>swd</type>
      <value>Forschung</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>swd</type>
      <value>Forschungsbericht</value>
    </subject>
    <collection role="institutes" number="HL">Hochschulleitung/Hochschulverwaltung</collection>
    <collection role="othpublikationsherkunft" number="">Von der OTH Regensburg herausgegeben</collection>
    <collection role="persons" number="weberlate">Weber, Karsten (Prof. Dr.) - Labor für Technikfolgenabschätzung und Angewandte Ethik</collection>
    <collection role="institutes" number="IAFW">Zentrum für Forschung und Transfer (ZFT ab 2024; vorher: IAFW)</collection>
    <collection role="persons" number="sternerfenes">Sterner, Michael (Prof. Dr.) - FENES / Forschungsgruppe Energiespeicher</collection>
    <collection role="persons" number="bruecklfenes">Brückl, Oliver (Prof. Dr.) - FENES / Forschungsgruppe Energienetze</collection>
    <collection role="persons" number="hauglasofo">Haug, Sonja (Prof. Dr.) - Labor Empirische Sozialforschung</collection>
    <thesisPublisher>Ostbayerische Technische Hochschule Regensburg</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-oth-regensburg/files/1383/Forschungsbericht_OTHR_2017.pdf</file>
  </doc>
  <doc>
    <id>2665</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>270</pageFirst>
    <pageLast>275</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">A Flexible and Reliable Internet-of-Things Solution for Real-Time Production Tracking</title>
    <abstract language="eng">The concept of Industrial Revolution 4.0 (IR4.0) has sparked the urgency of many manufacturers to revisit their manufacturing processes and search for opportunities to further improved their production output. Unfortunately, it is difficult to improve a process with inadequate data. Many of the SMEs in developing countries are still using manufacturing machines from the yesteryears which do not have computational and connectivity capabilities. Therefore, we developed an end-to-end Internet-of-Things (IoT) solution, which reliably tracks the production performance of manufacturing machines. This paper elaborates on the designs and the rationale behind it. As of the writing of this paper, our IoT system has been deployed in real manufacturing environment and has been running for approximately 90 days on a 24/7 basis without data lost.</abstract>
    <parentTitle language="eng">IEEE Industrial Electronics and Applications Conference (IEACon): 22.11.2021 - 23.11.2021, Penang, Malaysia</parentTitle>
    <identifier type="isbn">978-1-7281-9253-6</identifier>
    <identifier type="doi">10.1109/IEACon51066.2021.9654672</identifier>
    <enrichment key="opus.import.date">2022-02-04T08:58:18+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Boon Yaik Ooi</author>
    <author>Wai-Kong Lee</author>
    <author>Martin J. W. Schubert</author>
    <author>Yu-Wei Ooi</author>
    <author>Chee-Yang Chin</author>
    <author>Wing-Hon Woo</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>industry 4.0</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>IoT</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>production tracking</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Smart Manufacturing</value>
    </subject>
    <collection role="institutes" number="FakEI">Fakultät Elektro- und Informationstechnik</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Elektronik</collection>
  </doc>
  <doc>
    <id>1163</id>
    <completedYear/>
    <publishedYear>1990</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1553</pageFirst>
    <pageLast>1567</pageLast>
    <pageNumber/>
    <edition/>
    <issue>12</issue>
    <volume>33</volume>
    <type>article</type>
    <publisherName>Elsevier</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-06</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">An Analytical Model for Strongly Inverted and Accumulated Silicon Films</title>
    <abstract language="eng">An analytical model for the spatial distribution of potential, electric field and carrier densities is presented, assuming uniform doping density and constant quasi-Fermi potentials in the direction of modeling. Starting from the current relations a differential equation respecting two-dimensional effects is developed and solved approximately by decomposition in three regions with different preconditions: (a) flatband region, (b) constant spacecharge density and (c) strong inversion or accumulation. Inaccuracies arise mainly from violated preconditions at the interfaces between the different regions. Two-dimensional effects are respected in the analytical model of (b) only but they influence region (c) by means of boundary conditions at the interface of (b) and (c).&#13;
&#13;
The investigations of this paper are focused to region (c). This part of our model is identical to the model of Hauser and Littlejohn[1]. They integrated a simplified form of the semiconductor-Poisson equation twice but were restricted to one-dimensional applications and thermal equilibrium. Our derivation allows for large electric fields and current densities perpendicular to the direction of modeling. From analytical considerations confirmed by numerical experiments we suggest preference to the gradual channel condition, with x and y defined according to Fig. 1. This definition allows the potentials to vary significantly with respect to y. We found that this holds for the quasi-Fermi potentials also. Furthermore an empirical model for the maximum width of strong-inversion layers in uniformly doped silicon films is presented in eqn (46).</abstract>
    <parentTitle language="eng">Solid-State Electronics</parentTitle>
    <identifier type="doi">10.1016/0038-1101(90)90136-3</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <author>Martin J. W. Schubert</author>
    <author>Bernd Höfflinger</author>
    <author>René P. Zingg</author>
    <collection role="institutes" number="FakEI">Fakultät Elektro- und Informationstechnik</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Elektronik</collection>
  </doc>
  <doc>
    <id>1169</id>
    <completedYear/>
    <publishedYear>1993</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>24.6.1</pageFirst>
    <pageLast>24.6.4</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-06</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Design and Optimization of High-Voltage CMOS Devices Compatible wih a Standard 5V CMOS Technology</title>
    <abstract language="eng">High-voltage n- and p-MOSFETs fully compatible with a standard 5 V CMOS technology have been designed, optimized, and fabricated. No process changes are required. By modifying the logical equations generating one of the physical masks from the design masks, a p-type buffer region for the high-voltage p-MOS was easily implemented. This modification does not affect the low-voltage part of the circuits. These high-voltage devices have been used successfully as output drivers in semicustom arrays, and as building blocks for custom low- to high-voltage output interfaces. Aspects of reliability, device protection, and circuit design techniques are addressed.</abstract>
    <parentTitle language="eng">Proceedings of IEEE Custom Integrated Circuits Conference, May 9-12 1993, San Diego, CA, USA</parentTitle>
    <identifier type="isbn">0-7803-0826-3</identifier>
    <identifier type="doi">10.1109/CICC.1993.590766</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <author>Michel Declerq</author>
    <author>F. Clément</author>
    <author>Martin J. W. Schubert</author>
    <author>Adnan Harb</author>
    <author>Michel Dutoit</author>
    <collection role="institutes" number="FakEI">Fakultät Elektro- und Informationstechnik</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Elektronik</collection>
  </doc>
  <doc>
    <id>1168</id>
    <completedYear/>
    <publishedYear>1992</publishedYear>
    <thesisYearAccepted/>
    <language>fra</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>patent</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation>Institut National de la Propriété Industrielle, Paris</contributingCorporation>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-06</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="fra">Circuit Intermédiaire entre un Circuit Logique à Basse-Tension et un Etage de Sortie à Haute-Tension Réalisés dans une Technologie CMOS Standard</title>
    <abstract language="fra">La présente invention concerne un circuit intermédiaire entre un circuit logique a basse tension et un étage de sortie à haute tension réalisés dans une technologie CMOS standard. L'étage de sortie (20) comporte deux transistors respectivement à canal N et à canal P, réalisés selon une technologie CMOS standard. Le circuit intermédiaire comporte un translateur de niveau de tension (21) couplé entre un circuit logique d'entrée SL et ledit étage de sortie (20). Ce translateur de niveau de tension (21) est réalisé selon une technologie CMOS standard et est constitué d'au moins deux blocs de base identiques formant des miroirs de tension interconnectés de façon croisée. Ce circuit est utilisé pour commander des transducteurs, des écrans plasma et des actionneurs électromécaniques.</abstract>
    <enrichment key="PatentNr">92 06030</enrichment>
    <enrichment key="PatentLand">Frankreich</enrichment>
    <enrichment key="PatentYear">1992</enrichment>
    <enrichment key="PatentDate">05.05.1992</enrichment>
    <enrichment key="PatentZugriff">weltweit</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <author>Michel Declerq</author>
    <author>Martin J. W. Schubert</author>
    <collection role="institutes" number="FakEI">Fakultät Elektro- und Informationstechnik</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Elektronik</collection>
  </doc>
  <doc>
    <id>1165</id>
    <completedYear/>
    <publishedYear>1991</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>489</pageFirst>
    <pageLast>491</pageLast>
    <pageNumber/>
    <edition/>
    <issue>9</issue>
    <volume>12</volume>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-06</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">A One-Dimensional Analytical Model for the Dual-Gate-Controlled Thin-Film SOI MOSFET</title>
    <abstract language="eng">A one-dimensional analytical model for dual-gate-controlled SOI MOSFETs is presented and applied to a stacked p-channel MOSFET fabricated by epitaxial lateral overgrowth (ELO). The authors found and modeled a nonlinear dependence of front-gate threshold voltage on back-gate voltage if threshold is defined by a constant current instead of a constant silicon-surface potential. It is demonstrated by comparison of subthreshold slopes that surface potentials are not pinned to the onset of strong inversion or accumulation. Accurate one-dimensional modeling is a necessity for device characterization and a precondition for general SOI models for circuit simulation.&lt; &gt;</abstract>
    <parentTitle language="eng">IEEE Electron Device Letters</parentTitle>
    <identifier type="doi">10.1109/55.116927</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <author>Martin J. W. Schubert</author>
    <author>Bernd Höfflinger</author>
    <author>René P. Zingg</author>
    <collection role="institutes" number="FakEI">Fakultät Elektro- und Informationstechnik</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Elektronik</collection>
  </doc>
  <doc>
    <id>1164</id>
    <completedYear/>
    <publishedYear>1990</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>323</pageFirst>
    <pageLast>326</pageLast>
    <pageNumber/>
    <edition/>
    <issue>4</issue>
    <volume>7</volume>
    <type>conferenceobject</type>
    <publisherName>Elsevier</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-06</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">A New Analytical Charge Model for the Dual-Gate-Controlled Thin-Film SOI MOSFET</title>
    <abstract language="eng">An analytical model for dual-gate-controlled SOI MOSFETs is presented, assuming uniformly doped p-silicon films. It is restricted to electron inversion layers and depletion regions, neglecting hole densities. It allows to account for the spatial description of electronic quantities in the silicon film. Due to the non-linearities of the semiconductor equations the model parameters must be extracted iteratively. Some applications are presented to demonstrate the usefulness of the model.</abstract>
    <parentTitle language="eng">Superlattices and Microstructures</parentTitle>
    <identifier type="doi">10.1016/0749-6036(90)90218-V</identifier>
    <enrichment key="ConferenceStatement">Int. Conf. Phys. Electro-Opt. Microstruct. and Microdevices (ICPEOM'90), 5th, July 30 - Aug. 3 1990, Heraklion, Crete, Greece</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <author>Martin J. W. Schubert</author>
    <author>Bernd Höfflinger</author>
    <author>René P. Zingg</author>
    <collection role="institutes" number="FakEI">Fakultät Elektro- und Informationstechnik</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Elektronik</collection>
  </doc>
  <doc>
    <id>1167</id>
    <completedYear/>
    <publishedYear>1991</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>doctoralthesis</type>
    <publisherName/>
    <publisherPlace>Hamburg</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation>Technische Universität Hamburg-Harburg</contributingCorporation>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-06</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Eindimensionale Modellierung von SOI MOSFETs</title>
    <enrichment key="opus.source">publish</enrichment>
    <author>Martin J. W. Schubert</author>
    <collection role="institutes" number="FakEI">Fakultät Elektro- und Informationstechnik</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Elektronik</collection>
  </doc>
  <doc>
    <id>1178</id>
    <completedYear/>
    <publishedYear>1999</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-06</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Mixed-Signal Event-Driven Simulation of a Phase-Locked Loop</title>
    <abstract language="eng">The mixed-signal event-driven (MixED) simulationalgorithm using standard VHDL is capable of modelinga number of analog and mixed-signal problems in digital circuits, e.g. RCL networks representing pads or wires, charge pumps, dynamic logic, voltage-controlledoscillators, phase-locked  loops, etc. Important  featuresare single-kernel simulation as well as rapid A/D andD/A     interfacing. &#13;
This paper demonstrates the simulation of a phase-locked loop (PLL), which is  one of the most interesting applications of the MixED method. Many digital  designs contain a PLL as only mixed-signal building block. The MixED method allows to simulate such designs with standard VHDL.</abstract>
    <parentTitle language="eng">IEEE/VIUF International Workshops on Behavioral Modeling and Simulation (BMAS'99), October 4-6 1999, Orlando, Florida, USA</parentTitle>
    <identifier type="url">https://hps.hs-regensburg.de/~scm39115/homepage/research/mixed/mixed_publications/1999_bmas_pll.pdf</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <author>Martin J. W. Schubert</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>mixed-signal event-drivensimulation</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>standard VHDL</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>analog models</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>PLL</value>
    </subject>
    <collection role="institutes" number="FakEI">Fakultät Elektro- und Informationstechnik</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Elektronik</collection>
  </doc>
  <doc>
    <id>1170</id>
    <completedYear/>
    <publishedYear>1993</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>162</pageFirst>
    <pageLast>163</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-06</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">5V-to-75V CMOS Output Interfaces</title>
    <abstract language="eng">A family of CMOS low- to high-voltage output interface circuits based on a standard, unmodified low-voltage CMOS technology is described. Using only thin-oxide high-voltage (HV) devices with reduced V/sub GS/ (gate-to-source voltage) swing, it makes use of level-shift techniques to meet the constraints on the gate control signals. These static circuits permit the full output voltage swing of V/sub DDH/, while keeping the V/sub GS/ swing of the output devices within the safety limits, including during HV supply transients. Using a standard 2- mu m n-well CMOS technology, reliable, reproducible V/sub DS/ breakdown voltages as high as 120 V and 80 V have been obtained for HV-nMOS and HV-pMOS devices, respectively.&lt; &gt;</abstract>
    <parentTitle language="eng">Proceedings of the1993 IEEE International Solid-State Circuits Conference (ISSCC), Feb. 24-26 1993, San Francisco, CA, USA</parentTitle>
    <identifier type="doi">10.1109/ISSCC.1993.280014</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <author>Michel Declerq</author>
    <author>Martin J. W. Schubert</author>
    <author>F. Clément</author>
    <collection role="institutes" number="FakEI">Fakultät Elektro- und Informationstechnik</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Elektronik</collection>
  </doc>
  <doc>
    <id>1176</id>
    <completedYear/>
    <publishedYear>1997</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-06</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Operational Amplifier Modeling Using Event-Driven VHDL</title>
    <abstract language="eng">A method to model high-gain feedback-loop analog amplifiers on an event driven timeaxis is presented. The demonstrator is coded in digital VHDL’93. In the event-driven scheme any node in the network must converge „on its own“ based on the information delivered from its neighbors, as no overall matrix is set up. For this reason signalloops with a loop gain larger than one are typically unstable. This communication presents a numerically stable generic model for high gain amplifiers with a userdefined feedback network. Non-ideal effects like offset or finite gain can be taken into account.</abstract>
    <parentTitle language="eng">IEEE/VIUF International Workshops on Behavioral Modeling and Simulation (BMAS'97), October 20/21 1997, Washington D.C., USA</parentTitle>
    <identifier type="url">https://citeseerx.ist.psu.edu/viewdoc/download?doi=10.1.1.495.5356&amp;rep=rep1&amp;type=pdf</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <author>Martin J. W. Schubert</author>
    <collection role="institutes" number="FakEI">Fakultät Elektro- und Informationstechnik</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Elektronik</collection>
  </doc>
  <doc>
    <id>1177</id>
    <completedYear/>
    <publishedYear>1997</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-06</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Mixed Analog-Digital Circuit Modeling Using Event-Driven VHDL</title>
    <abstract language="eng">The mixed-signal event-driven (MixED) method developed to simulate small portions of analog circuitry within a digital environment is demonstrated in a mixed signal application. The MixED models using concurrent iteration to account for analog nodes were coded and run in standard VHDL’93. Networks containing linear components such as sources, resistors, capacitors, inductors and operational amplifiers are presented. The possibility to manipulate resistors during runtime is used to simulate switches.</abstract>
    <parentTitle language="eng">IEEE/VIUF International Workshops on Behavioral Modeling and Simulation (BMAS'97), Ocotober 20/21 1997, Washington D.C., USA</parentTitle>
    <identifier type="url">https://hps.oth-regensburg.de/scm39115/homepage/research/mixed/mixed_publications/1997_bmas_circuit.pdf</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <author>Ernst Bartsch</author>
    <author>Martin J. W. Schubert</author>
    <collection role="institutes" number="FakEI">Fakultät Elektro- und Informationstechnik</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Elektronik</collection>
  </doc>
  <doc>
    <id>1174</id>
    <completedYear/>
    <publishedYear>1997</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>77</pageFirst>
    <pageLast>86</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-06</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Mixed Analog-Digital Signal Modeling Using Event-Driven VHDL</title>
    <abstract language="eng">A method for solving networks containing generic analog components such as resistors, capacitors and inductors onan event driven time axis using digital VHDL is presented. The components are modeled as complex state machines communicating with their neighbors using INOUT type ports. The method takes advantage of simulation deltas to iterate without simulation-time consumption. A limited range of implicit equations can be solved this way.</abstract>
    <parentTitle language="eng">X Brazilian Symposium on Integrated Circuit Design (SBCCI'97), August 25-27 1997, Porto Alegre, Brazil</parentTitle>
    <identifier type="url">http://citeseerx.ist.psu.edu/viewdoc/download;jsessionid=50F6F0DA594FB90976CC1474581BC139?doi=10.1.1.508.3657&amp;rep=rep1&amp;type=pdf</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <author>Martin J. W. Schubert</author>
    <collection role="institutes" number="FakEI">Fakultät Elektro- und Informationstechnik</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Elektronik</collection>
  </doc>
  <doc>
    <id>1175</id>
    <completedYear/>
    <publishedYear>1997</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>patent</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-06</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Feedback-nach-Feedforward-Transformation zur Verhaltensmodellierung rückgekoppelter Verstärker</title>
    <enrichment key="PatentNr">197 45 946.3</enrichment>
    <enrichment key="PatentLand">Deutschland</enrichment>
    <enrichment key="PatentYear">1997</enrichment>
    <enrichment key="PatentDate">17.10.1997</enrichment>
    <enrichment key="PatentZugriff">weltweit</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <author>Martin J. W. Schubert</author>
    <collection role="institutes" number="FakEI">Fakultät Elektro- und Informationstechnik</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Elektronik</collection>
  </doc>
  <doc>
    <id>1172</id>
    <completedYear/>
    <publishedYear>1996</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>patent</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-06</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Verfahren zur Simulation von Netzwerken auf einer ereignisgesteuerten Zeitachse mittels verteilter, lokaler Iteration</title>
    <enrichment key="PatentNr">19651502.5</enrichment>
    <enrichment key="PatentLand">Deutschland</enrichment>
    <enrichment key="PatentYear">1996</enrichment>
    <enrichment key="PatentDate">11.12.1996</enrichment>
    <enrichment key="PatentZugriff">weltweit</enrichment>
    <enrichment key="opus.source">publish</enrichment>
    <author>Martin J. W. Schubert</author>
    <collection role="institutes" number="FakEI">Fakultät Elektro- und Informationstechnik</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Elektronik</collection>
  </doc>
  <doc>
    <id>1171</id>
    <completedYear/>
    <publishedYear>1994</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>296</pageFirst>
    <pageLast>297</pageLast>
    <pageNumber/>
    <edition/>
    <issue>4</issue>
    <volume>30</volume>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-06</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">70V-to-5V Differential CMOS Input Interface</title>
    <parentTitle language="eng">IEE Electronic Letters</parentTitle>
    <identifier type="doi">10.1049/el:19940235</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <author>Martin J. W. Schubert</author>
    <collection role="institutes" number="FakEI">Fakultät Elektro- und Informationstechnik</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Elektronik</collection>
  </doc>
  <doc>
    <id>1173</id>
    <completedYear/>
    <publishedYear>1997</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-06</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Mixed Signal Modeling in VHDL by Distributed Local Iteration</title>
    <parentTitle language="deu">VHDL Form, Toledo, Spain, April 20-24, 1997</parentTitle>
    <enrichment key="opus.source">publish</enrichment>
    <author>Martin J. W. Schubert</author>
    <collection role="institutes" number="FakEI">Fakultät Elektro- und Informationstechnik</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Elektronik</collection>
  </doc>
  <doc>
    <id>1184</id>
    <completedYear/>
    <publishedYear>2018</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>2606</pageFirst>
    <pageLast>2615</pageLast>
    <pageNumber/>
    <edition/>
    <issue>3</issue>
    <volume>54</volume>
    <type>article</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-06</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Multi-source energy harvesting and storage for floating wireless sensor network nodes with Long Range Communication Capability</title>
    <abstract language="eng">Wireless sensor networks are widely used for environmental monitoring in remote areas. They are mainly composed of wireless sensor nodes, usually powered by batteries with limited capacity, but are expected to communicate in long range and operate for extended time periods. To overcome these limitations, many energy harvesting techniques are proposed to power wireless nodes for prolonged operation, whereas multihop techniques are utilized to extend the communication range. In this paper, a novel floating device with multisource energy harvesting technology that can be used as a wireless sensor node is proposed. The long range communication between wireless sensor nodes and a gateway is established through LoRa technology. In addition to conventional solar panels, an energy harvesting technique based on thermoelectric generators exploiting thermal differences created between water surface and materials exposed to sunlight is proposed. Energy generated from photovoltaic and thermoelectric generators is combined to power the wireless sensor node. This floating device consumes 6.6216 Wh per day when used as a wireless sensor node for the collection and transmission of environmental data. The sensor node can operate on a water surface for at least 9.6 days when it is not exposed to sunlight. During a sunny day, the floating device can harvest 8.375 Wh from solar panels and 0.425 Wh from thermoelectric generation. In other words, the floating device harvests sufficient energy to be self-sustaining during sunny days.</abstract>
    <parentTitle language="eng">IEEE Transactions on Industry Applications</parentTitle>
    <identifier type="doi">10.1109/TIA.2018.2799</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Wai-Kong Lee</author>
    <author>Martin J. W. Schubert</author>
    <author>Boon Yaik Ooi</author>
    <author>Stanley Jian-Qin Ho</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Wireless sensor networks</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Energy harvesting</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>floating device</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>LoRa</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>sensor node</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>solar energy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>thermoelectric generation</value>
    </subject>
    <collection role="institutes" number="FakEI">Fakultät Elektro- und Informationstechnik</collection>
    <collection role="othforschungsschwerpunkt" number="16312">Energie und Mobilität</collection>
    <collection role="institutes" number="">Labor Elektronik</collection>
  </doc>
</export-example>
