<?xml version="1.0" encoding="utf-8"?>
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  <doc>
    <id>1162</id>
    <completedYear/>
    <publishedYear>1989</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-06</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Extending EDIF for Technology Data</title>
    <parentTitle language="eng">EDIF World Conference, 1989, San Jose, CA, USA, 11.-14. September</parentTitle>
    <enrichment key="opus.source">publish</enrichment>
    <author>Martin J. W. Schubert</author>
    <author>J. Blödel</author>
    <author>P. Conradi</author>
    <author>P. Lafosse</author>
    <author>W. Nebel</author>
    <author>S. Neusser</author>
    <author>M. Ryba</author>
    <author>D. Schröder</author>
    <collection role="institutes" number="FakEI">Fakultät Elektro- und Informationstechnik</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Elektronik</collection>
  </doc>
  <doc>
    <id>1577</id>
    <completedYear/>
    <publishedYear>1991</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>237</pageFirst>
    <pageLast>240</pageLast>
    <pageNumber/>
    <edition/>
    <issue>1-4</issue>
    <volume>15</volume>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">1D Modeling of SOI MOSFETs Using Distinct Quasi-Fermi Potentials</title>
    <abstract language="eng">Distinct electron and hole quasi-Fermi potentials, øf,n and øf,p, are included into a one-dimensional SOI MOSFET model that accounts for finite inversion and depletion layer thicknesses. The inclusion of øf,n, øf,p in the nonlinear analytical model is demonstrated to describe phenomena like kink effect and the multistable-charge-controlled-memory effect (MCCM) in SOI MOSFETs. The calculation of øf,p(t) depends on the device history and generation/recombination rates.</abstract>
    <parentTitle language="eng">Microelectronic Engineering</parentTitle>
    <identifier type="doi">10.1016/0167-9317(91)90221-X</identifier>
    <enrichment key="ConferenceStatement">21st European Solid State Device Research Conference (Essderc '91), 16-19 September 1991, Montreux, Suisse</enrichment>
    <author>Martin J. W. Schubert</author>
    <author>Bernd Höfflinger</author>
    <author>D. Schröder</author>
    <author>René P. Zingg</author>
    <collection role="institutes" number="FakEI">Fakultät Elektro- und Informationstechnik</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Elektronik</collection>
  </doc>
</export-example>
