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  <doc>
    <id>4724</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>2</issue>
    <volume>31</volume>
    <type>article</type>
    <publisherName>AIP Publishing</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Stable field emission of single B-doped Si tips and linear current scaling of uniform tip arrays for integrated vacuum microelectronic devices</title>
    <abstract language="eng">Advanced Si-based semiconductor technology is most suitable to fabricate uniform nanostructures as integrated field emitter arrays for novel vacuum electronic devices. In order to improve the field emission homogeneity and stability of p-type silicon tip arrays for pulsed sensor applications, the authors have systematically studied the influence of the fabrication parameters on the tip shape and on the specific operating conditions. Based on detailed design calculations of the field enhancement, they have fabricated two series of hexagonal arrays of B-doped Si-tips in a triangular arrangement. The first (second) type contains three (four) patches with different number of tips (1, 91, 547 and 1, 19, 1027, 4447 for the first and second type, respectively) of about 1 (2.5) μm height, ∼20 (20) nm apex radius, and 20 (10) μm pitch. The field emission properties of both individual tips and complete arrays were investigated with a field emission scanning microscope at a pressure of 10−9 mbar. The current plateau of these tips typically occurs at about 10 (3) nA and around 65 (25) V/μm field level. In this carrier saturation range, single tips provide the highest current stability (&lt;5%) and optical current switching ratio (∼2.5). Fairly homogeneous emission of the tip arrays leads to an undershooting of the expected linear scaling of the mean plateau current as well as to a much improved current stability (&lt;1%).</abstract>
    <parentTitle language="eng">Journal of Vacuum Science &amp; Technology B Nanotechnology and Microelectronics</parentTitle>
    <identifier type="doi">10.1116/1.4765088</identifier>
    <enrichment key="opus.import.date">2022-07-04T20:29:15+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Pavel Serbun</author>
    <author>Benjamin Bornmann</author>
    <author>Aliaksandr Navitski</author>
    <author>Günter Müller</author>
    <author>Christian Prommesberger</author>
    <author>Christoph Langer</author>
    <author>Florian Dams</author>
    <author>Rupert Schreiner</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlm">Schreiner, Rupert (Prof. Dr.), Zeitschriftenaufsätze - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
  </doc>
  <doc>
    <id>2599</id>
    <completedYear/>
    <publishedYear>2022</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>1</issue>
    <volume>40</volume>
    <type>article</type>
    <publisherName>AIP Publishing</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">In situ quantitative field emission imaging using a low-cost CMOS imaging sensor</title>
    <abstract language="eng">Spatially resolved field emission measurements represent an important factor in further development of existing field emitter concepts. In this work, we present a novel approach that allows quantitative analysis of individual emission spots from integral current-voltage measurements using a low-cost and commercially available CMOS camera. By combining different exposure times to extrapolate oversaturated and underexposed pixels, a near congruence of integral current and image brightness is shown. The extrapolation also allows parallel investigation of all individual tips participating in the total current with currents ranging from a few nanoampere to one microampere per tip. The sensitivity, which is determined by the integral brightness-to-current ratio, remains unchanged within the measurement accuracy even after ten full measurement cycles. Using a point detection algorithm, the proportional current load of each individual tip of the field emitter array is analyzed and compared at different times during the initial measurement cycle. Together with the extracted I-V curves of single emission spots from the integral measurement, the results indicate the effect of premature burnout of particularly sharp tips during conditioning of the emitter.</abstract>
    <parentTitle language="eng">Journal of Vacuum Science &amp; Technology B</parentTitle>
    <identifier type="doi">10.1116/6.0001551</identifier>
    <enrichment key="opus.import.date">2022-01-27T15:33:58+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Andreas Schels</author>
    <author>Simon Edler</author>
    <author>Florian Herdl</author>
    <author>Walter Hansch</author>
    <author>Michael Bachmann</author>
    <author>Daniela Ritter</author>
    <author>Markus Dudeck</author>
    <author>Felix Duesberg</author>
    <author>Manuel Meyer</author>
    <author>Andreas Pahlke</author>
    <author>Matthias Hausladen</author>
    <author>Philipp Buchner</author>
    <author>Rupert Schreiner</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ARRAYS</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ELECTRON-EMISSION</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>EMITTERS</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>FakANK</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlm">Schreiner, Rupert (Prof. Dr.), Zeitschriftenaufsätze - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>2550</id>
    <completedYear/>
    <publishedYear>2022</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>1</issue>
    <volume>40</volume>
    <type>article</type>
    <publisherName>AIP Publishing</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Origin of the current saturation level of p-doped silicon field emitters</title>
    <abstract language="eng">Using p-type semiconductors for field emitters is one simple way to realize an integrated current limiter to improve the lifetime of the cathode. In this work, the origin of the current saturation of p-type silicon emitters is investigated in detail. Single emitters are electrically characterized and compared to simulation results. With a simulation model considering a high surface generation rate and elevated tip temperature, a good agreement to the measured data is found. This observation is supported further by alteration of the surface experimentally. Electrical measurements after different treatments in hydrofluoric acid as well as heated and subsequent operation at room temperature are well explained by the influence of surface generation. Furthermore, it is shown that the field penetration leads to a small voltage drop and a strong geometry-dependent reduction of the field enhancement factor.</abstract>
    <parentTitle language="eng">Journal of Vacuum Science &amp; Technology B</parentTitle>
    <identifier type="doi">10.1116/6.0001554</identifier>
    <enrichment key="opus.import.date">2022-01-27T15:10:05+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Simon Edler</author>
    <author>Andreas Schels</author>
    <author>Florian Herdl</author>
    <author>Walter Hansch</author>
    <author>Michael Bachmann</author>
    <author>Markus Dudeck</author>
    <author>Felix Duesberg</author>
    <author>Andreas Pahlke</author>
    <author>Matthias Hausladen</author>
    <author> Buchner Philipp</author>
    <author>Rupert Schreiner</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>EMISSION</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>GROWTH</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>NATIVE-OXIDE</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlm">Schreiner, Rupert (Prof. Dr.), Zeitschriftenaufsätze - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>1025</id>
    <completedYear/>
    <publishedYear>2018</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>2</issue>
    <volume>36</volume>
    <type>article</type>
    <publisherName>AIP Publishing</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Field emission characterization of in situ deposited gold nanocones with variable cone densities</title>
    <abstract language="eng">For the fabrication of field emitter cathodes with metallic nanocones, an in situ fabrication technique based on electrodeposition in an ion track etched polymer template was used. Three samples with nanocones made of gold and different cone densities were deposited on a circular electrode with a diameter of 2.5 mm, using templates with pore density of 6 × 104, 4 × 105, and 1 × 106 cones/cm2. The cones had a height of 24 μm, a base diameter between 3 and 3.75 μm, and a tip diameter below 500 nm. Integral field emission measurements revealed onset fields of down to 3.1 V/μm and average field enhancement factors of up to 1240. For one sample, the maximum emission current from the cathode reached 142.2 μA at an applied voltage of 338 V between cathode and extraction grid, which had a distance of 50 μm. To investigate the stability of the field emission current, cumulative long-term measurements were performed for over 50 h. A stable emission current of (31.0 ± 1.3) μA at an average applied voltage of 290 V (E = 5.8 V/μm) was observed. For currents above 100 μA, a decrease of the current and therefore a degradation of the emitter structures occurred.</abstract>
    <parentTitle language="eng">Journal of Vacuum Science and Technology B</parentTitle>
    <identifier type="doi">10.1116/1.5009504</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <author>Johannes Bieker</author>
    <author>Farough Roustaie</author>
    <author>Helmut F. Schlaak</author>
    <author>Christoph Langer</author>
    <author>Rupert Schreiner</author>
    <author>Marcel Lotz</author>
    <author>Stefan Wilfert</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlm">Schreiner, Rupert (Prof. Dr.), Zeitschriftenaufsätze - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>4765</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>SPIE</publisherName>
    <publisherPlace>Bellingham, Wash.</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">A high thermal resistance MEMS-based Pirani vacuum sensor chip</title>
    <abstract language="eng">The performance of thermal conductivity vacuum gauges can be improved by a well-designed geometry. The lower measurement range limit is determined by the size of the active sensing area and the thermal conduction heat losses through the supporting structures. The upper measurement range is limited by the distance between the heated element and the cold reference plane. Silicon based MEMS-technology gives the possibility to fabricate both sensing structures with suitable areas out of low thermal conductive materials and narrow gaps in order to extend the measurement range in both directions. In this work we present a MEMS-process to fabricate high thermal resistance sensor structures. The rectangular sensitive areas are anchored by four beams and are structured out of low thermal conductive PECVD-siliconnitride films with 1 µm in thickness. The metallic heating structure is completely embedded in the SiN-layer. Both sensitive area and its support beams were released from the silicon bulk material by anisotropic underetching. In this way a free-supporting structure with a gap of 150 μm to the silicon substrate was formed. The influence of the filament geometry and temperature was systematically investigated to determine the properties of the chips as thermal conductivity vacuum gauges. The temperature of the sensitive area was held constant by a self-balancing bridge circuit and the heating power was measured by a Δ-Σ-ADC. The average solid state thermal conductivity is in the order of 106WK1. The measuring range of the most sensitive structures covers 8 orders of magnitude from 105 mbar to 1000mbar.</abstract>
    <parentTitle language="eng">Smart sensors, actuators and MEMS VI : 24 - 26 April 2013, Grenoble, France / [part of SPIE microtechnologies]</parentTitle>
    <identifier type="doi">10.1117/12.2017345</identifier>
    <enrichment key="opus.import.date">2022-07-06T16:27:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="OtherSeries">Proceedings SPIE ; vol. 8763</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Florian Dams</author>
    <author>Rupert Schreiner</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>1067</id>
    <completedYear/>
    <publishedYear>2019</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferencesummary</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-04</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Novel Non-Radiative Electron Source</title>
    <abstract language="eng">Recently a non-radioactive electron capture detector based on a thermionic electron emitter has been demonstrated [1]. Using field emitter arrays (FEAs) would yield non-radioactive portable low power devices with fast switching capability. By combining FEAs with a vacuum-sealed housing and an electron transparent membrane window, such electron sources can be operated in an ambient pressure environment.</abstract>
    <parentTitle language="eng">43rd International Symposium of Capillary Chromatography &amp; 16h GC x GC Symposium 2019</parentTitle>
    <enrichment key="opus.source">publish</enrichment>
    <author>Felix Düsberg</author>
    <author>Michael Bachmann</author>
    <author>Simon Edler</author>
    <author>Andreas Pahlke</author>
    <author>Christoph Langer</author>
    <author>Christian Prommesberger</author>
    <author>Rupert Schreiner</author>
    <author>Erik Bunert</author>
    <author>Cornelius Wendt</author>
    <author>Stefan Zimmermann</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>1065</id>
    <completedYear/>
    <publishedYear>2019</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>American Institute of Aeronautics and Astronautics, Inc</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-04</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Realization of Multifunctional Surfaces Containing MEMS-based DBD Plasma Actuators and Biomimetic Structures for Flow Manipulation</title>
    <parentTitle language="deu">AIAA Aviation 2019 Forum, 2019, Dallas</parentTitle>
    <identifier type="doi">10.2514/6.2019-2999</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <author>Dominik Berndt</author>
    <author>Matthias Lindner</author>
    <author>Rupert Schreiner</author>
    <author>Andrei V. Pipa</author>
    <author>Rüdiger Hink</author>
    <author>Ronny Brandenburg</author>
    <author>Rüdiger Foest</author>
    <author>Judith Geils</author>
    <author>Aljoscha Sander</author>
    <author>Florian Hoffmann</author>
    <author>Daniel Matz</author>
    <author>Albert Baars</author>
    <author>Antonia Kesel</author>
    <author>Alexander Max</author>
    <author>Ralf Caspari</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>1070</id>
    <completedYear/>
    <publishedYear>2018</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>1-2</pageNumber>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-04</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Stable and low noise field emission from single p-type Si-tips</title>
    <abstract language="eng">Single gated p-type Si-tips with two different tip radii were fabricated. An emission current of 2.40 μA was measured for the sharp-edged tip at a voltage of 170 V. In contrast, a stable and reproducible emission behavior was observed with an increased tip radius resulting in a pronounced saturation region between 90 V and 150 V, but merely an emission current of 0.55 μA at 150 V. More remarkable is the stable emission behavior with fluctuation of ± 4 % during a measurement period of 30 minutes. The integral emission current in a homogeneous tip array (16 emitters) showed nearly the same I-V characteristics compared to the single tip and is therefore, most dominated by only a stable single tip in the array.</abstract>
    <parentTitle language="eng">International Vacuum Nanoelectronics Conference (IVNC), 31st, 2018, Kyoto, Japan</parentTitle>
    <identifier type="doi">10.1109/IVNC.2018.8520018</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <author>Christian Prommesberger</author>
    <author>Christoph Langer</author>
    <author>Rupert Schreiner</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emission</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>p-type Si-tips</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>gate-electrode</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>emission stability</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>low current fluctuations</value>
    </subject>
    <collection role="ddc" number="621">Angewandte Physik</collection>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>1069</id>
    <completedYear/>
    <publishedYear>2018</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>2</pageNumber>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-04</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Field emission assisted micro plasma discharges at vacuum and atmospheric pressures</title>
    <abstract language="eng">Spatially confined non-equilibrium plasmas at vacuum and atmospheric pressure in the dimensions from a few microns to one millimeter are a promising approach to the generation and maintenance of stable glow discharges. The realization of these micro-discharges or micro-plasmas enable more accurate investigations in the field of micro plasma research. We report on field emission assisted micro plasmas excited by an alternating current with frequencies up to 1 kHz. Due to the field enhancement caused by an array of Si nano-tip structures the ignition voltage of stable plasma discharges can be reduced by 30%.</abstract>
    <parentTitle language="eng">31st International Vacuum Nanoelectronics Conference (IVNC), 2018, Kyoto, Japan</parentTitle>
    <identifier type="doi">10.1109/IVNC.2018.8520181</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Matthias Lindner</author>
    <author>Dominik Berndt</author>
    <author>Christian Prommesberger</author>
    <author>Christoph Langer</author>
    <author>Rupert Schreiner</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>1068</id>
    <completedYear/>
    <publishedYear>2018</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>2</issue>
    <volume>Vol.13</volume>
    <type>conferenceobject</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-04</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Miniaturized Plasma Actuator Flow Measurements by MEMS-Based Thermal Conductivity Sensors</title>
    <abstract language="eng">The gasflow created by a minaturized dielectric barrier discharge (DBD) plasma actuator is measured by a MEMS-based thermal conductivity gas sensor giving an indication of flow velocity and flow direction. The possiblity of several sensors in a small area gives a far better accuracy of local flow phenomena compared to conventional sensors. This is important for a better understanding of plasma- induced flow characteristics.</abstract>
    <parentTitle language="eng">MDPI Proceedings of Eurosensors 2018, 9-12 September, Graz</parentTitle>
    <identifier type="doi">10.3390/proceedings2130939</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="ConferenceStatement">urosensors 2018 Conference, Graz, Austria, 9–12 September 2018</enrichment>
    <author>Dominik Berndt</author>
    <author>Matthias Lindner</author>
    <author>Karl Tschurtschenthaler</author>
    <author>Christoph Langer</author>
    <author>Rupert Schreiner</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>thermal conductivity sensors; plasma actuators; surface hotfilms; sensors for aerospace</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="oaweg" number="">Gold Open Access- Erstveröffentlichung in einem/als Open-Access-Medium</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>1130</id>
    <completedYear/>
    <publishedYear>2018</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>1-2</pageNumber>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-05</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Influence of adsorbates on the performance of a field emitter array in a high voltage triode setup</title>
    <abstract language="eng">The influence of residual gas pressure on the characteristics of black-Silicon field emitter arrays in a high voltage triode setup is investigated. I-Vcharacteristics at different pressure levels show a decrease of emission current with rising pressure. This can be explained by an increase of the work function and charging of the emitter surface due to adsorbates. The initial characteristics can be restored by heating the FEA up to 110 °C during electron emission. This regeneration procedure enables an extension of the lifetime from about 20 h to 440 h at a residual gas pressure of 10 -5 mbar.</abstract>
    <parentTitle language="eng">International Vacuum Nanoelectronics Conference (IVNC), 31st, 2018, Kyoto, Japan</parentTitle>
    <identifier type="doi">10.1109/IVNC.2018.8520214</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <author>Simon Edler</author>
    <author>Walter Hansch</author>
    <author>Christian Prommesberger</author>
    <author>Rupert Schreiner</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>semiconductor field emission</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emitter array</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon tips</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>emission current stability</value>
    </subject>
    <collection role="ddc" number="621">Angewandte Physik</collection>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>867</id>
    <completedYear/>
    <publishedYear>2020</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>April</issue>
    <volume>305</volume>
    <type>article</type>
    <publisherName>Elsevier</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">MEMS-based thermal conductivity sensor for hydrogen gas detection in automotive applications</title>
    <abstract language="eng">Accurate detection of hydrogen gas in vehicle interiors is very important for the future of a fuel cell car. Since this type of gas is highly volatile and flammable, the measurement methods have to be very reliable and precise due to safety reasons. In this paper a thermal conductivity sensor for hydrogen gas detection is presented, exhibiting a lower detection limit of 2000 ppm hydrogen in laboratory air. The sensor element is realized by micro-fabrication techniques on silicon wafers. The heated filament is exposed by a selective wet etching process creating a micro-hotplate on a thin membrane. In order to minimize power consumption, the sensor is operated in pulsed mode. Hydrogen gas detection was carried out using a synthetic gas testbench. Measurements of hydrogen contents ranging from 0% to 4% with an increment of 0.5% were successfully performed for ambient gas temperatures between -15°C and 84°C. Including humidity, high moisture contents have the greatest influence on thermal conductivity. This was predicted in theoretical investigations and confirmed in experiments. For evaluation, both the change in resistance ΔR as well as the time constant τ were taken as sensor output. For both quantities, the previously established theoretical relationship with thermal conductivity could be confirmed.</abstract>
    <parentTitle language="eng">Sensors and Actuators A: Physical</parentTitle>
    <identifier type="doi">10.1016/j.sna.2019.111670</identifier>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Dominik Berndt</author>
    <author>Josef Muggli</author>
    <author>Franz Wittwer</author>
    <author>Christoph Langer</author>
    <author>Stephan Heinrich</author>
    <author>Thorsten Knittel</author>
    <author>Rupert Schreiner</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlm">Schreiner, Rupert (Prof. Dr.), Zeitschriftenaufsätze - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>3531</id>
    <completedYear/>
    <publishedYear>2020</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst>64</pageFirst>
    <pageLast>72</pageLast>
    <pageNumber>9</pageNumber>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName/>
    <publisherPlace>Landshut</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2020-04-16</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Charakterisierung der dielektrischen Barrierenentladung von Mikroplasmaaktuatoren in Abhängigkeit der Substratdicke</title>
    <parentTitle language="deu">Intelligente Systeme und ihre Komponenten: Forschung und industrielle Anwendung : Fachbeiträge 2. Symposium Elektronik und Systemintegration ESI 2020</parentTitle>
    <identifier type="url">https://nbn-resolving.org/urn:nbn:de:bvb:860-opus4-2130</identifier>
    <note>Die Fachtagung, geplant für den 01. April 2020 an der Hochschule Landshut, wurde aufgrund der Corona-Pandemie abgesagt, die eingereichten Fachbeiträge im Tagungsband 2. Symposium Elektronik und Systemintegration ESI 2020: "Intelligente Systeme und ihre Komponenten: Forschung und industrielle Anwendung" veröffentlicht. Hrsg.: Artem Ivanov, Marc Bicker und Peter Patzelt. Hochschule Landshut, 2020, ISBN 978-3-9818439-4-1.</note>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Theodor Silberbauer</author>
    <author>Matthias Lindner</author>
    <author>Rupert Schreiner</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>7104</id>
    <completedYear/>
    <publishedYear>2024</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>2</issue>
    <volume>42</volume>
    <type>article</type>
    <publisherName>AIP Publishing</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Integrated silicon electron source for high vacuum microelectromechanical system devices</title>
    <abstract language="eng">The article presents the process of developing a silicon electron source designed for high-vacuum microelectromechanical system (HV MEMS) devices, i.e., MEMS electron microscope and MEMS x-ray source. Technological constraints and issues of such an electron source are explained. The transition from emitters made of carbon nanotubes to emitters made of pure silicon is described. Overall, the final electron source consists of a silicon tip emitter and a silicon gate electrode integrated on the same glass substrate. The source generates an electron beam without any carbon nanotube coverage. It generates a high and stable electron current and works after the final bonding process of an HV MEMS device.</abstract>
    <parentTitle language="eng">Journal of Vacuum Science &amp; Technology B</parentTitle>
    <identifier type="issn">2166-2746</identifier>
    <identifier type="doi">10.1116/6.0003385</identifier>
    <enrichment key="opus.source">doi-import</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">true</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Michał Krysztof</author>
    <author>Paweł Miera</author>
    <author>Paweł Urbański</author>
    <author>Tomasz Grzebyk</author>
    <author>Matthias Hausladen</author>
    <author>Rupert Schreiner</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Materials Chemistry</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Electrical and Electronic Engineering</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Surfaces, Coatings and Films</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Process Chemistry and Technology</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Instrumentation</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Electronic, Optical and Magnetic Materials</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>5955</id>
    <completedYear/>
    <publishedYear>2001</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1277</pageFirst>
    <pageLast>1279</pageLast>
    <pageNumber/>
    <edition/>
    <issue>12</issue>
    <volume>13</volume>
    <type>article</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Monolithically integrated tunable laterally coupled distributed-feedback lasers</title>
    <abstract language="eng">A new method for fabrication of tunable InGaAsP-InP single-mode lasers without epitaxial overgrowth is reported. These devices show the advantage of a considerably simplified fabrication process compared to conventional tunable laser types. The lasers comprise an active Bragg reflector integrated with an uncorrugated separately pumped gain region. By adjusting the current through the Bragg reflector, the wavelength can be tuned between 1590.8 and 1595.2 nm.</abstract>
    <parentTitle language="eng">Photonics Technology Letters</parentTitle>
    <identifier type="doi">10.1109/68.969880</identifier>
    <enrichment key="opus.import.date">2023-04-13T12:39:51+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Rupert Schreiner</author>
    <author>Peter Naegele</author>
    <author>M. Körbl</author>
    <author>A. Groning</author>
    <author>Jean-Louis Gentner</author>
    <author>Heinz C. Schweizer</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Tunable circuits and devices</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Optical coupling</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Laser tuning</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Etching</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Pump lasers</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Laser feedback</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Optical device fabrication</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Distributed feedback devices</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Gratings</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Fiber lasers</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="persons" number="schreinerlm">Schreiner, Rupert (Prof. Dr.), Zeitschriftenaufsätze - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>7718</id>
    <completedYear/>
    <publishedYear>2024</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>2</pageLast>
    <pageNumber>2</pageNumber>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Silicon Nanowire Field Emitters with Integrated Extraction Gates Using Benzocyclobutene as an Insulator</title>
    <abstract language="eng">We are continuously improving the performance of our field emission electron sources. In this work a geometrically optimized design of electron sources with silicon nanowire field emitters on pillars was fabricated. This new design increased the packing density of the emitters by using a hexagonal arrangement of the pillars and a pillar spacing of 40 µm. Benzocyclobutene was used as the insulator material for an integrated (Cr/Ni) extraction gate. A modified fabrication process for the field emitters further improved reproducibility and reliability. An emission current of about 0.4 mA was measured for 30 minutes at an extraction voltage of 250 V and an anode voltage of 500 V. Electron transmission through the gate reached almost 100%.</abstract>
    <parentTitle language="eng">37th International Vacuum Nanoelectronics Conference (IVNC), 15-19 July 2024, Brno, Czech Republic</parentTitle>
    <identifier type="doi">10.1109/IVNC63480.2024.10652314</identifier>
    <enrichment key="opus.source">doi-import</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">true</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Philipp Buchner</author>
    <author>Alexander Kaiser</author>
    <author>Matthias Hausladen</author>
    <author>Mathias Bartl</author>
    <author>Michael Bachmann</author>
    <author>Rupert Schreiner</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>2445</id>
    <completedYear/>
    <publishedYear>2022</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>17</pageLast>
    <pageNumber/>
    <edition/>
    <issue>2</issue>
    <volume>22</volume>
    <type>article</type>
    <publisherName>MDPI</publisherName>
    <publisherPlace>Basel</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">A Robust Miniaturized Gas Sensor for H₂ and CO₂ Detection Based on the 3ω Method</title>
    <abstract language="eng">Gas concentration monitoring is essential in industrial or life science areas in order to address safety-relevant or process-related questions. Many of the sensors used in this context are based on the principle of thermal conductivity. The 3ω-method is a very accurate method to determine the thermal properties of materials. It has its origin in the thermal characterization of thin solid films. To date, there have been very few scientific investigations using this method to determine the thermal properties of gases and to apply it to gas measurement technology. In this article, we use two exemplary gases (H2 and CO2) for a systematical investigation of this method in the context of gas analysis. To perform our experiments, we use a robust, reliable sensing element that is already well established in vacuum measurement technology. This helix-shaped thin wire of tungsten exhibits high robustness against chemical and mechanical influences. Our setup features a compact measurement environment, where sensor operation and data acquisition are integrated into a single device. The experimental results show a good agreement with a simplified analytical model and FEM simulations. The sensor exhibits a lower detection limit of 0.62% in the case of CO2, and only 0.062% in case the of H2 at an excitation frequency of 1 Hz. This is one of the lowest values reported in literature for thermal conductivity H2 sensors.</abstract>
    <parentTitle language="eng">Sensors</parentTitle>
    <identifier type="doi">10.3390/s22020485</identifier>
    <note>Corresponding author: Dominik J. Berndt</note>
    <enrichment key="opus.import.date">2022-01-21</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="ConferenceStatement">16th International Conference on Optical and Electronic Sensors (COE 2020)</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Creative Commons - CC BY - Namensnennung 4.0 International</licence>
    <author>Dominik Berndt</author>
    <author>Josef Muggli</author>
    <author>Robert Heckel</author>
    <author>Mohd Fuad Rahiman</author>
    <author>Matthias Lindner</author>
    <author>Stephan Heinrich</author>
    <author>Heinz Plöchinger</author>
    <author>Rupert Schreiner</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>3ω-method</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>CO2 sensor</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>H2 sensor</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>thermal gas sensor</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="oaweg" number="">Gold Open Access- Erstveröffentlichung in einem/als Open-Access-Medium</collection>
    <collection role="persons" number="schreinerlm">Schreiner, Rupert (Prof. Dr.), Zeitschriftenaufsätze - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="oaweg" number="">Corresponding author der OTH Regensburg</collection>
  </doc>
  <doc>
    <id>5954</id>
    <completedYear/>
    <publishedYear>2000</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>636</pageFirst>
    <pageLast>637</pageLast>
    <pageNumber/>
    <edition/>
    <issue>7</issue>
    <volume>36</volume>
    <type>article</type>
    <publisherName>The Institution of Engineering and Technology, IET</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Laterally gain-coupled 1.57 [micro sign]m DFB lasers with chromium surface grating and self-aligned Ti/Pt/Au ohmic contact</title>
    <abstract language="eng">A simple method for fabricating gain coupled DFB lasers with lateral surface chromium Bragg gratings and self-aligned low capacitance ohmic contacts is reported. These InGaAsP/InP lasers show monomode emission with a sidemode suppression ratio of 40 dB. For 243 µm long devices a continuous wave threshold current of 17 mA was measured at room temperature.</abstract>
    <parentTitle language="eng">Electronics Letters</parentTitle>
    <identifier type="doi">10.1049/el:20000500</identifier>
    <identifier type="issn">0013-5194</identifier>
    <enrichment key="opus.import.date">2023-04-13T12:39:51+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Rupert Schreiner</author>
    <author>M. Körbl</author>
    <author>H. Gräbeldinger</author>
    <author>Jean-Louis Gentner</author>
    <author>H. Schweizer</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Bragg gratings</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>platinum</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>chromium</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ohmic contacts</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>titanium</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>distributed feedback lasers</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>gold</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="persons" number="schreinerlm">Schreiner, Rupert (Prof. Dr.), Zeitschriftenaufsätze - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>3102</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>372</pageFirst>
    <pageLast>375</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>1024</volume>
    <type>article</type>
    <publisherName>Scientific.net</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Compact and Energy-Efficient Field Emission Cathodes for Sensor Applications</title>
    <abstract language="eng">We report on miniaturized silicon field emitter arrays for the application in compact and energy-saving vacuum-microelectronic devices, e.g. sensors or x-ray tubes. Since standard silicon semiconductor technology has been used for the fabrication, they may be easily integrated with other silicon based circuits and devices on the same chip. The silicon tip geometry and the operating conditions were optimized in order to obtain highly uniform and stable electron field emission from large area cathode arrays. A series of uniform hexagonal tip arrays containing each 547 tips were fabricated and characterized. The electron emission properties of both individual tips as well as of complete emitter arrays were investigated. A saturation level in the voltage-current characteristics was found, which can be explained by the limitation of the supply of electrons due to the p-type silicon wafer material. When operating the arrays in the current saturation regime at an emission current of ~ 1 nA per tip, a highly stable and low noise emission can be observed.</abstract>
    <parentTitle language="eng">Advanced Materials Research</parentTitle>
    <identifier type="doi">10.4028/www.scientific.net/amr.1024.372</identifier>
    <enrichment key="opus.import.date">2022-03-17T06:05:16+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Rupert Schreiner</author>
    <author>Christoph Langer</author>
    <author>Christian Prommesberger</author>
    <author>Florian Dams</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emission</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Si-Tip Cathodes</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Vacuum Sensors</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlm">Schreiner, Rupert (Prof. Dr.), Zeitschriftenaufsätze - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>2682</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace>Piscataway, N.J.</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Influence of Geometrical Arrangements of Si Tip Arrays Fabricated by Laser Micromachining on their Emission Behaviour</title>
    <abstract language="eng">ensely packed emitters on a field emission array lead typically to mutual shielding. Taking biology as a role model for geometric arrangements could be a way to reduce this effect. For comparison, two electron sources, one with a spiral and a second with conventional rectangular (orthogonal) arranged emitters, were fabricated and investigated. Emission currents of 6 µA in the spiral ordered array and 120 µA in the rectangular array were reached with an extraction voltage of 400 V. From a mid-term measurement over 1 h a current stability of ±8.8 % (spiral) respectively ±5.7 % (rectangular) with a mean degradation of -3.0 µA/h (spiral) and -0.12 µA/h (rectangular) could be observed.</abstract>
    <parentTitle language="eng">2021 34th International Vacuum Nanoelectronics Conference (IVNC): 7/5/2021 - 7/9/2021, Lyon, France</parentTitle>
    <identifier type="isbn">978-1-6654-2589-6</identifier>
    <identifier type="doi">10.1109/IVNC52431.2021.9600717</identifier>
    <identifier type="issn">2380-6311</identifier>
    <enrichment key="opus.import.date">2022-02-04T08:58:18+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Matthias Hausladen</author>
    <author>Vitali Bomke</author>
    <author>Philipp Buchner</author>
    <author>Michael Bachmann</author>
    <author>Alexandr Knapek</author>
    <author>Rupert Schreiner</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>aperture field</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>emission grid</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Fabrication</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>laser micromachining</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>parastichy tip arrangements</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon field emission</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Stability analysis</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Spirals</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Field emitter array</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Voltage measurement</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>2685</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>2</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Investigation on the Emission Behaviour of p-doped Silicon Field Emission Arrays with Individually Controllable Single Tips</title>
    <abstract language="eng">Four individually controllable emission tips consisting of &lt;111&gt; p-Type silicon, were structured on a glass substrate by laser ablation. A matching extraction grid was manufactured in the same manner and aligned with the emitters. The resulting samples were characterized in ultra-high vacuum. As expected, the individual currents show a strong saturation and in the saturation region a considerably lower current fluctuation than n-type silicon due to charge carrier depletion. The individual tips behave completely independent behaviour from each other and the overall emission can be deduced from the sum of the currents through the individual tips.</abstract>
    <parentTitle language="eng">2021 34th International Vacuum Nanoelectronics Conference (IVNC): 7/5/2021 - 7/9/2021, Lyon, France</parentTitle>
    <identifier type="isbn">978-1-6654-2589-6</identifier>
    <identifier type="doi">10.1109/IVNC52431.2021.9600756</identifier>
    <enrichment key="opus.import.date">2022-02-04T08:58:18+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Philipp Buchner</author>
    <author>Vitali Bomke</author>
    <author>Matthias Hausladen</author>
    <author>Simon Edler</author>
    <author>Michael Bachmann</author>
    <author>Rupert Schreiner</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>6454</id>
    <completedYear/>
    <publishedYear>2023</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>160</pageFirst>
    <pageLast>162</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Electron Beam Induced Growth of Carbon Nanotips on Tungsten and Silicon Fieldemitters</title>
    <abstract language="eng">In our experiments we grew electron emitting carbon nanostructures on tungsten tips. Subsequently, we transferred the growth process to pre-structured phosphorus-doped n-type silicon and obtained emitting carbon nanostructures directly grown on silicon. After growth of the nanostructures, the silicon field emitters showed increased emission currents of 76 nA at 1.1 kV (compared to 6 nA under the same conditions before growth).</abstract>
    <parentTitle language="eng">2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA</parentTitle>
    <identifier type="isbn">979-8-3503-0143-4</identifier>
    <identifier type="doi">10.1109/IVNC57695.2023.10188960</identifier>
    <enrichment key="opus.import.date">2023-08-21T08:29:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">true</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Fabian Hecht</author>
    <author>Florian Bauereiβ</author>
    <author>Josef Sellmair</author>
    <author>Philipp Buchner</author>
    <author>Matthias Hausladen</author>
    <author>Rupert Schreiner</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Behavioral sciences</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Nanostructures</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Carbon dioxide</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Current measurement</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Electron beams</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Tungsten</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>2690</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>2</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Testing the performance of Murphy-Good plots when applied to current-voltage characteristics of Si field electron emission tips</title>
    <abstract language="eng">Murphy-Good plots are the most recent type of the analysis methods in the field electron emission theory, this type of plots has several useful characteristics such as: having the very-nearly straight line to represent the current-voltage characteristics and the absence of the correction factors in the mathematical procedure of the analysis process. In this study, n-type &lt;111&gt; and &lt;100&gt; Si chips containing four individual emitters are used as base emitters and mounted in a diode configuration field emission setup where the experiments are operated in an ultra-high vacuum ( 10-7 Pa). Each chip has four individual controllable emitters with 5 µm distance between the Si tips and the same material grid. Laser micromachining and subsequent wet chemical etching technique is used to structure and polish the tips. Murphy-Good plots are used to study the behavior of the Si individual tips and compare the results with the array current by extracting the field emission characterization parameters of the emitters.</abstract>
    <parentTitle language="eng">2021 34th International Vacuum Nanoelectronics Conference (IVNC): 5-9 July 2021, Lyon, France</parentTitle>
    <identifier type="doi">10.1109/IVNC52431.2021.9600690</identifier>
    <enrichment key="opus.import.date">2022-02-04T08:58:18+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Mohammad M. Allaham</author>
    <author>Philipp Buchner</author>
    <author>Rupert Schreiner</author>
    <author>Alexandr Knápek</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>characterization parameter</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Current-voltage characteristics</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>electron emission</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>electron source</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Limiting</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Micromachining</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Murphy-Good plot</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>n-type Si chip</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RESISTANCE</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>safety</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>4181</id>
    <completedYear/>
    <publishedYear>2017</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>134</pageNumber>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>SPIE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Curriculum design and German student exchange for Sino-German Bachelor program majored in optoelectronics engineering</title>
    <abstract language="eng">Different higher education backgrounds in China and Germany led to challenges in the curriculum design at the beginning of our cooperative bachelor program in Optoelectronics Engineering. We see challenges in different subject requirements from both sides and in the German language requirements for Chinese students. The curriculum was optimized according to the AS IIN criteria, which makes it acceptable and und erstandable by both countries. German students are integrated into the Chinese class and get the sa me lectures like their Chinese colleagues. Intercultural and curriculum challenges are successfully solved. The results are summarized to provide an example for other similar international programs.</abstract>
    <parentTitle language="eng">14th Conference on Education and Training in Optics and Photonics (ETOP 2017), 29-31.05.2017, Hangzhou, China, 29-31.05.2017</parentTitle>
    <identifier type="doi">10.1117/12.2269574</identifier>
    <enrichment key="opus.import.date">2022-06-08T12:38:13+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="OtherSeries">Proceedings of SPIE ; 10452</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Jihong Zheng</author>
    <author>Thomas Fuhrmann</author>
    <author>Boqing Xu</author>
    <author>Rupert Schreiner</author>
    <author>Hongzhi Jia</author>
    <author>Wei Zhang</author>
    <author>Ning Wang</author>
    <author>Gudrun Seebauer</author>
    <author>Jiyan Zhu</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>cooperative bachelor program</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>optoelectronics</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>microsystems</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>student exchange</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="institutes" number="FakEI">Fakultät Elektro- und Informationstechnik</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16315">Information und Kommunikation</collection>
    <collection role="oaweg" number="">Bronze Open Access - frei zugänglich aber ohne Lizenzhinweis</collection>
    <collection role="institutes" number="">Labor Optische Übertragungssysteme</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>4661</id>
    <completedYear/>
    <publishedYear>2017</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst>797</pageFirst>
    <pageLast>800</pageLast>
    <pageNumber/>
    <edition/>
    <issue>CD-ROM</issue>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>VDE-Verlag</publisherName>
    <publisherPlace>München</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Innovatives Verfahren zur Herstellung und Integration metallischer Nanokonen für die Feldemission</title>
    <abstract language="deu">In den letzten Jahren wurde am Institut für Elektromechanische Konstruktionen die Fabrikation und Integration von metallischen Nanodrähten und Nanokonen mittels Template-basierter Abscheidung erforscht. Diese Variante der in-situ Abscheidung von metallischen Nanostrukturen bietet eine Vielzahl von Anwendungsmöglichkeiten. Im Rahmen dieses Beitrags werden das Herstellungsverfahren zur Herstellung metallischer Nanokonen vorgestellt. Dies beinhaltet sowohl die Templatepräparation mittels asymmetrischen Ätzens als auch die anschließende Integration mittels galvanischer Abscheidung. Eine Anwendung der metallischen Nanokonen stellt die Verwendung als Feldemitter in der Vakuumelektronik dar. Es werden erste Messungen der Langzeitstabilität des Feldemissionsstromes der metallischen Konen präsentiert.</abstract>
    <abstract language="eng">Recently the fabrication and integration of metallic nanowires and nanocones based on ion-track etched templates has been in the focus of research at the Institute for Electromechanical Design at the TU Darmstadt. Using the method for the in-situ deposition various applications are feasible. In this paper we present the fabrication method for in-situ deposition of metallic nanocones, including the preparation of the polymer templates based on asymmetric etching and the process description for integration via electrodeposition. Giving one example for an application, the metallic nanocones can be used as field emitters in vacuum electronics. The field emission properties will be presented briefly.</abstract>
    <parentTitle language="deu">MikroSystemTechnik Kongress 2017 : MEMS, Mikroelektronik, Systeme 23.-25. Oktober 2017 in München</parentTitle>
    <additionalTitle language="deu">Innovative fabrication method for in-situ deposition of metallic nanocones for field emission</additionalTitle>
    <identifier type="isbn">978-3-8007-4491-6</identifier>
    <enrichment key="opus.import.date">2022-07-03T14:30:54+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Johannes Bieker</author>
    <author>Farough Roustaie</author>
    <author>Christoph Langer</author>
    <author>Rupert Schreiner</author>
    <author>Helmut F. Schlaak</author>
    <subject>
      <language>deu</language>
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