<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>4065</id>
    <completedYear/>
    <publishedYear>2007</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>633</pageFirst>
    <pageLast>636</pageLast>
    <pageNumber/>
    <edition/>
    <issue>5812</issue>
    <volume>315</volume>
    <type>article</type>
    <publisherName>AAAS</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Ultrafast bond softening in bismuth: mapping a solid's interatomic potential with X-rays</title>
    <abstract language="eng">Intense femtosecond laser excitation can produce transient states of matter that would otherwise be inaccessible to laboratory investigation. At high excitation densities, the interatomic forces that bind solids and determine many of their properties can be substantially altered. Here, we present the detailed mapping of the carrier density-dependent interatomic potential of bismuth approaching a solid-solid phase transition. Our experiments combine stroboscopic techniques that use a high-brightness linear electron accelerator-based x-ray source with pulse-by-pulse timing reconstruction for femtosecond resolution, allowing quantitative characterization of the interatomic potential energy surface of the highly excited solid.</abstract>
    <parentTitle language="eng">Science</parentTitle>
    <identifier type="doi">10.1126/science.1135009</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>D. M. Fritz</author>
    <author>D. A. Reis</author>
    <author>B. Adams</author>
    <author>R. A. Akre</author>
    <author>J. Arthur</author>
    <author>Christian Blome</author>
    <author>P. H. Bucksbaum</author>
    <author>A. L. Cavalieri</author>
    <author>S. Engemann</author>
    <author>S. Fahy</author>
    <author>R. W. Falcone</author>
    <author>P. H. Fuoss</author>
    <author>K. J. Gaffney</author>
    <author>M. J. George</author>
    <author>J. Hajdu</author>
    <author>M. P. Hertlein</author>
    <author>P. B. Hillyard</author>
    <author>Michael Horn-von Hoegen</author>
    <author>Martin Kammler</author>
    <author>J. Kaspar</author>
    <author>R. Kienberger</author>
    <author>P. Krejcik</author>
    <author>S. H. Lee</author>
    <author>A. M. Lindenberg</author>
    <author>B. McFarland</author>
    <author>D. Meyer</author>
    <author>T. Montagne</author>
    <author>E. D. Murray</author>
    <author>A. J. Nelson</author>
    <author>Matthieu Nicoul</author>
    <author>R. Pahl</author>
    <author>J. Rudati</author>
    <author>H. Schlarb</author>
    <author>D. P. Siddons</author>
    <author>Klaus Sokolowski-Tinten</author>
    <author>Th Tschentscher</author>
    <author>D. von der Linde</author>
    <author>J. B. Hastings</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4086</id>
    <completedYear/>
    <publishedYear>2002</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>117</pageFirst>
    <pageLast>127</pageLast>
    <pageNumber/>
    <edition/>
    <issue>1-2</issue>
    <volume>512</volume>
    <type>article</type>
    <publisherName>Elsevier</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Kinetics of Au induced faceting of vicinal Si(111)</title>
    <abstract language="eng">Au induced faceting of vicinal Si(1 1 1) has been studied during adsorption at elevated temperature by spot profile analyzing of low energy electron diffraction and after quenching to room temperature by scanning tunneling microscopy. On the surfaces inclined towards five different types of facets form with increasing Au coverage at adsorption temperatures Tads below 800 °C. They are (4 4 3), (7 7 5), (5 5 3), a stepped (2 2 1), and the (3 3 1) facets. Atomic models for the (5 5 3) and (7 7 5) facet planes are proposed on the basis of high resolution STM images. At C we found the formation of an ordered step train which covers the entire surface. With further increasing Au coverage the stepped surface decomposes again into (1 1 1) terraces and step bunches. Driving force is the formation of the Si(1 1 1)-(5×2)–Au reconstruction.</abstract>
    <parentTitle language="eng">Surface Science</parentTitle>
    <identifier type="doi">10.1016/S0039-6028(02)01666-7</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>R. Hild</author>
    <author>C. Seifert</author>
    <author>Martin Kammler</author>
    <author>Frank-Joachim Meyer zu Heringdorf</author>
    <author>Michael Horn-von Hoegen</author>
    <author>R.A Zhachuk</author>
    <author>B.Z Olshanetsky</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Low energy electron diffraction (LEED)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Scanning tunneling microscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Gold</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Faceting</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Adsorption kinetics</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Step formation and bunching</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4085</id>
    <completedYear/>
    <publishedYear>2002</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>297</pageFirst>
    <pageLast>298</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Femtosecond X-ray diffraction of short-pulse irradiated semiconductors</title>
    <abstract language="eng">Summary form only given, as follow. Ultrafast optical-pump, X-ray diffraction probe experiments are providing new ways to study transient processes including the direct observation of the atomic motion by which many solid-state processes and chemical and biochemical reactions take place. Current table-top-terawatt femtosecond laser systems provide an attractive source of few-hundred femtosecond duration bursts of angstrom-scale X-ray radiation with fluxes comparable to standard rotating anode sources. Their compact size enables time resolved structural dynamics to be studied in the small laboratory with temporal resolution better than typical molecular vibrational periods. Ultrafast structural dynamics in crystalline samples are readily studied with such systems and experiments to be discussed in this talk include ultrafast non-thermal solid-to-liquid transition in thin single-crystal Ge-111 films grown on Si-111 substrates; ultrafast non-thermal solid-to-solid transitions in bulk vanadium dioxide from a low temperature insulating phase to a high temperature metallic phase; and harmonic and anharmonic coherent acoustic dynamics in layered Ge-111/Si-111 and bulk GaAs-111 samples. Future improvements in high-average power short-pulse lasers will enable the study of a wider class of materials such as amorphous solids or liquid-phase dynamics of simple molecules, while proposed 4th generation light sources based upon single-pass X-ray free-electron lasers will permit singleshot structural determination of complex biomolecules.</abstract>
    <parentTitle language="deu">Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges, 24-24 May 2002, Long Beach, CA, USA</parentTitle>
    <identifier type="doi">10.1109/CLEO.2002.1033997</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>C. W. Siders</author>
    <author>Andrea Cavalleri</author>
    <author>Csaba Tóth</author>
    <author>K. R. Wilson</author>
    <author>Jeff A. Squier</author>
    <author>C. P. J. Barty</author>
    <author>Martin Kammler</author>
    <author>Klaus Sokolowski-Tinten</author>
    <author>Michael Horn-von Hoegen</author>
    <author>D. von der Linde</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>high-speed techniques</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray diffraction</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>laser beam effects</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>semiconductor materials</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>solid-liquid transformations</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>solid-state phase transformations</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>metal-insulator transition</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4092</id>
    <completedYear/>
    <publishedYear>2001</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>473</pageFirst>
    <pageLast>477</pageLast>
    <pageNumber/>
    <edition/>
    <issue>Pr2</issue>
    <volume>11</volume>
    <type>article</type>
    <publisherName>EDP</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Transient lattice dynamics in fs-laser-excited semiconductors probed by ultrafast X-ray diffraction</title>
    <abstract language="eng">A study of lattice dynamics in fs-laser-excited crystalline bulk Ge and Ge/Si-heterostructures, using time-resolved x-ray diffraction, was presented. Fast energy transport deep into the bulk of the material, coherent acoustic phonon dynamics, lattice anharmonicity, and vibrational transport across a buried interfaces were observed. Graphs showing time-dependent shifts of the centroid of the measured rocking curves in the Ge-overlayer and in the Si-substrate for different fluences, were presented.</abstract>
    <parentTitle language="eng">Journal de Physique IV</parentTitle>
    <identifier type="doi">10.1051/jp4:2001290</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Klaus Sokolowski-Tinten</author>
    <author>Michael Horn-von Hoegen</author>
    <author>D. von der Linde</author>
    <author>Andrea Cavalleri</author>
    <author>C. W. Siders</author>
    <author>F. L. H. Brown</author>
    <author>D. M. Leitner</author>
    <author>Csaba Tóth</author>
    <author>Jeff A. Squier</author>
    <author>C. P. J. Barty</author>
    <author>K. R. Wilson</author>
    <author>Martin Kammler</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4091</id>
    <completedYear/>
    <publishedYear>2001</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>281</pageFirst>
    <pageLast>283</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>66</volume>
    <type>article</type>
    <publisherName>Springer</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Time-resolved x-ray diffraction study of ultrafast acoustic phonon dynamics in Ge/Si-heterostructures</title>
    <abstract language="eng">Using time-resolved x-ray diffraction the ultafast strain dynamics in fs-laserexcited Ge/Si-heterostructures has been studied. A fluence dependent, anharmonic damping of the impulsively generated acoustic phonons and vibrational transport across the buried Ge/Si-interface are observed.</abstract>
    <parentTitle language="eng">Chemical Physics</parentTitle>
    <identifier type="doi">10.1007/978-3-642-56546-5_81</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Klaus Sokolowski-Tinten</author>
    <author>Andrea Cavalleri</author>
    <author>C. W. Siders</author>
    <author>F. L. H. Brown</author>
    <author>D. M. Leitner</author>
    <author>Csaba Tóth</author>
    <author>Martin Kammler</author>
    <author>Michael Horn-von Hoegen</author>
    <author>D. von der Linde</author>
    <author>Jeff A. Squier</author>
    <author>C. P. J. Barty</author>
    <author>K. R. Wilson</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4100</id>
    <completedYear>2002</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>preprint</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Dynamics of atomic steps on Si(001) studied by temporal LEED spectroscopy [Poster]</title>
    <abstract language="eng">While surface kinetics measurements for single atom diffusion have proliferated, little work exists attempting to measure surface dynamics under equilibrium conditions. We will present our recent work on developing Temporal LEED Spectroscopy (TLS) as a dynamic probe of surfaces capable of kinetics measurements at both high temperatures and surface coverages. By tuning the diffraction to specific structural entities such as steps, islands, etc., and monitoring the diffracted signal as a function of time, dynamics information about these structures can be obtained. As an example we will present TLS results for the dynamics of step fluctuations on Si(001) [1]. We have measured activation energies and identified step-edge diffusion as the rate limiting process for 950K &lt; T &lt; 1130K. Although this result is in apparent disagreement with earlier work, a careful analysis, considering crossover temperatures between different microscopic processes, can reconcile the differences. 1. M. Kammler, et al., Phys. Rev. B (in press).</abstract>
    <identifier type="url">https://www.researchgate.net/publication/252546721_Dynamics_of_atomic_steps_on_Si001_studied_by_temporal_LEED_spectroscopy_poster</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Michael C. Tringides</author>
    <author>E. H. Conrad</author>
    <author>Andreas Menzel</author>
    <author>Neil R. Voss</author>
    <author>Martin Kammler</author>
    <author>Michael Horn-von Hoegen</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4096</id>
    <completedYear/>
    <publishedYear>1999</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>579</pageFirst>
    <pageLast>582</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>343-344</volume>
    <type>article</type>
    <publisherName>Elsevier</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Bi surfactant mediated epitaxy of Ge on Si(111)</title>
    <abstract language="eng">We have tested Bi for the surfactant mediated epitaxy of Ge on Si(111). Islanding of Ge is prevented and a 2D layer growth of smooth and continuous Ge films is observed. The lattice mismatch is accommodated by a periodic array of dislocations confined to the Si/Ge interface. The large covalent radius of Bi reduces the binding energy, allowing Very efficient segregation and low doping levels even at low growth temperatures. Unfortunately, this results also in a high Bi desorption flux limiting the possible growth temperatures below 600 degrees C. Consequently the Ge films show a high defect density in the order of 10(8) cm(-2) for stacking faults and 10(9) cm(-2) for dislocations which limit electron Hall mobility to values below 700 cm(2)/V s at room temperature.</abstract>
    <parentTitle language="eng">Thin Solid Films</parentTitle>
    <identifier type="doi">10.1016/S0040-6090(98)01659-9</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Michael Horn-von Hoegen</author>
    <author>Frank-Joachim Meyer zu Heringdorf</author>
    <author>Martin Kammler</author>
    <author>C. Schaeffer</author>
    <author>D. Reinking</author>
    <author>K. R. Hofmann</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Hall mobility</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Heteroepitaxial growth</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Surfactants</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Doping</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Molecular beam epitaxy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Germanium</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Bismuth</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Low energy electron diffraction</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Scanning electron microscopy</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4093</id>
    <completedYear/>
    <publishedYear>2000</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>586</pageFirst>
    <pageLast>589</pageLast>
    <pageNumber/>
    <edition/>
    <issue>3</issue>
    <volume>85</volume>
    <type>article</type>
    <publisherName>APS</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Anharmonic lattice dynamics in germanium measured with ultrafast x-ray diffraction</title>
    <abstract language="eng">Damping of impulsively generated coherent acoustic oscillations in a femtosecond laser-heated thin germanium film is measured as a function of fluence by means of ultrafast x-ray diffraction. By simultaneously measuring picosecond strain dynamics in the film and in the unexcited silicon substrate, we separate anharmonic damping from acoustic transmission through the buried interface. The measured damping rate and its dependence on the calculated temperature of the thermal bath is consistent with estimated four-body, elastic dephasing times (T2) for 7-GHz longitudinal acoustic phonons in germanium.</abstract>
    <parentTitle language="eng">Physical review letters</parentTitle>
    <identifier type="doi">10.1103/PhysRevLett.85.586</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Andrea Cavalleri</author>
    <author>C. W. Siders</author>
    <author>F. L. H. Brown</author>
    <author>D. M. Leitner</author>
    <author>Csaba Tóth</author>
    <author>Jeff A. Squier</author>
    <author>C. P. J. Barty</author>
    <author>K. R. Wilson</author>
    <author>Klaus Sokolowski-Tinten</author>
    <author>Michael Horn-von Hoegen</author>
    <author>D. von der Linde</author>
    <author>Martin Kammler</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4095</id>
    <completedYear/>
    <publishedYear>2000</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName>Optica</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Time-resolved x-ray diffraction study of ultrafast acoustic phonon dynamics in Ge/Si-heterostructures</title>
    <abstract language="eng">Using time-resolved x-ray diffraction the ultafast strain dynamics in fs-laserexcited Ge/Si-heterostructures has been studied. A fluence dependent, anharmonic damping of the impulsively generated acoustic phonons and vibrational transport across the buried Ge/Si-interface are observed.</abstract>
    <parentTitle language="eng">International Conference on Ultrafast Phenomena , 9 July 2000, Charleston</parentTitle>
    <identifier type="url">https://opg.optica.org/abstract.cfm?uri=UP-2000-MF43</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Klaus Sokolowski-Tinten</author>
    <author>Michael Horn-von Hoegen</author>
    <author>D. von der Linde</author>
    <author>Andrea Cavalleri</author>
    <author>C. W. Siders</author>
    <author>F. L. H. Brown</author>
    <author>Csaba Tóth</author>
    <author>Jeff A. Squier</author>
    <author>C. P. J. Barty</author>
    <author>K. R. Wilson</author>
    <author>Martin Kammler</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Acoustic Phonon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Acoustic Transmission</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Carrier Diffusion</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Homogenous Expansion</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Lattice Anharmonicity</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4097</id>
    <completedYear/>
    <publishedYear>1999</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1340</pageFirst>
    <pageLast>1342</pageLast>
    <pageNumber/>
    <edition/>
    <issue>5443</issue>
    <volume>286</volume>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Detection of nonthermal melting by ultrafast X-ray diffraction</title>
    <abstract language="eng">Using ultrafast, time-resolved, 1.54 angstrom x-ray diffraction, thermal and ultrafast nonthermal melting of germanium, involving passage through nonequilibrium extreme states of matter, was observed. Such ultrafast, optical-pump, x-ray diffraction probe measurements provide a way to study many other transient processes in physics, chemistry, and biology, including direct observation of the atomic motion by which many solid-state processes and chemical and biochemical reactions take place.</abstract>
    <parentTitle language="eng">Science</parentTitle>
    <identifier type="doi">10.1126/science.286.5443.1340</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>C. W. Siders</author>
    <author>Andrea Cavalleri</author>
    <author>Klaus Sokolowski-Tinten</author>
    <author>Csaba Tóth</author>
    <author>T. Guo</author>
    <author>Martin Kammler</author>
    <author>Michael Horn-von Hoegen</author>
    <author>K. R. Wilson</author>
    <author>D. von der Linde</author>
    <author>C. P. J. Barty</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4098</id>
    <completedYear/>
    <publishedYear>1999</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>503</pageFirst>
    <pageLast>504</pageLast>
    <pageNumber/>
    <edition/>
    <issue>6</issue>
    <volume>35</volume>
    <type>article</type>
    <publisherName>IET</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Fabrication of high-mobility Ge p-channel MOSFETs on Si substrates</title>
    <abstract language="eng">The first fabrication of Ge p-channel MOSFETs (p-MOSFETs) on Si substrates is reported. A CMOS compatible process based on relaxed Ge layers grown on Si(111) substrates by surfactant mediated epitaxy (SME) was used. The non-optimised low temperature process yielded normally-off Ge p-MOSFETs with record channel drift mobilities of 430 cm&lt;sup&gt;2&lt;/sup&gt;/Vs</abstract>
    <parentTitle language="eng">Electronics Letters</parentTitle>
    <identifier type="doi">10.1049/el:19990349</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>D. Reinking</author>
    <author>Martin Kammler</author>
    <author>N. Hoffmann</author>
    <author>Michael Horn-von Hoegen</author>
    <author>K. R. Hofmann</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>CMOS integrated circuits</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>germanium</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>carrier mobility</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>epitaxial growth</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>integrated circuit technology</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>elemental semiconductors</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>semiconductor growth</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>MOSFET</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Insulated gate field effect transistors</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Thin film growth and epitaxy</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4094</id>
    <completedYear/>
    <publishedYear>2000</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>276</pageFirst>
    <pageLast>280</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>66</volume>
    <type>article</type>
    <publisherName>Springer</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Direct Observation of Ultrafast Non-thermal Melting by Ultrafast X-ray Diffraction</title>
    <abstract language="eng">Ultrafast nonthermal melting of femtosecond laser-irradiated germanium was observed directly for the first time using sub-picosecond, 1.54-angstrom x-ray diffraction. Such measurements allow the study of transient atomic motion fundamental to many processes in physics, chemistry, and biology.</abstract>
    <parentTitle language="deu">Ultrafast Phenomena XII</parentTitle>
    <identifier type="doi">10.1007/978-3-642-56546-5_80</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>C. W. Siders</author>
    <author>Andrea Cavalleri</author>
    <author>Klaus Sokolowski-Tinten</author>
    <author>Csaba Tóth</author>
    <author>T. Guo</author>
    <author>Martin Kammler</author>
    <author>Michael Horn-von Hoegen</author>
    <author>K. R. Wilson</author>
    <author>D. von der Linde</author>
    <author>C. P. J. Barty</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4099</id>
    <completedYear/>
    <publishedYear>1999</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>bookpart</type>
    <publisherName>Optica</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Lattice dynamics of femtosecond laser-excited semiconductors probed by ultrafast x-ray diffraction</title>
    <abstract language="eng">The present knowledge of the atomic structure of matter is to a large extent due to x-ray spectroscopies.</abstract>
    <parentTitle language="deu">Applications of High Field and Short Wavelength Sources VIII</parentTitle>
    <identifier type="doi">10.1364/HFSW.1999.PD3</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Klaus Sokolowski-Tinten</author>
    <author>D. von der Linde</author>
    <author>C. W. Siders</author>
    <author>Andrea Cavalleri</author>
    <author>Csaba Tóth</author>
    <author>T. Guo</author>
    <author>K. R. Wilson</author>
    <author>C. P. J. Barty</author>
    <author>Martin Kammler</author>
    <author>Michael Horn-von Hoegen</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4062</id>
    <completedYear/>
    <publishedYear>2009</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>2</issue>
    <volume>80</volume>
    <type>article</type>
    <publisherName>APS</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Phonon confinement effects in ultrathin epitaxial bismuth films on silicon studied by time-resolved electron diffraction</title>
    <abstract language="eng">The transient temperature evolution of ultrathin bismuth films, epitaxially grown on a silicon single crystal, upon femtosecond laser excitation is studied by time-resolved electron diffraction. The exponential decay of the film temperature is explained by phonon reflection at the interface, which results in a strongly reduced thermal conduction in the cross plane of the layered system. The thermal boundary conductance is found to be as low as 1273 W/(K cm2). Model calculations, including phonon confinement effects, explain the linear relationship between the observed film-temperature decay constant and the film thickness. Even for 2.5 nm thin films the phonon transmission probability across the interface is given by bulk properties. Our simulations show that phonon confinement effects are negligible for bismuth-film thicknesses larger than 1 nm.</abstract>
    <parentTitle language="eng">Physical Review B</parentTitle>
    <identifier type="doi">10.1103/PhysRevB.80.024307</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Boris Krenzer</author>
    <author>Anja Hanisch-Blicharski</author>
    <author>Paul Schneider</author>
    <author>Thomas Payer</author>
    <author>Simone Möllenbeck</author>
    <author>O. Osmani</author>
    <author>Martin Kammler</author>
    <author>R. Meyer</author>
    <author>Michael Horn-von Hoegen</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
</export-example>
