<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>4087</id>
    <completedYear/>
    <publishedYear>2002</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>7</issue>
    <volume>65</volume>
    <type>article</type>
    <publisherName>APS</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Si(001) step dynamics: A temporal low-energy electron diffraction study</title>
    <abstract language="eng">We present equilibrium measurements of the dynamics of steps on Si(001) using temporal electron-diffraction spectroscopy. Activation energies and the rate limiting kinetics are identified for 950K&lt;~T&lt;~1130K. Unlike previous studies at higher temperatures, we can exclude evaporation and condensation of atoms or dimers from the step edges as the rate limiting process in this temperature regime. The possible reason for this difference is discussed in terms of a crossover from different rate-limiting kinetics.</abstract>
    <parentTitle language="eng">Physical Review B</parentTitle>
    <identifier type="doi">10.1103/PhysRevB.65.075312</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Martin Kammler</author>
    <author>Michael Horn- von Hoegen</author>
    <author>N. Voss</author>
    <author>Michael C. Tringides</author>
    <author>Andreas Menzel</author>
    <author>E. H. Conrad</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4075</id>
    <completedYear/>
    <publishedYear>2003</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName>Optical Society of America</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Femtosecond X-ray Diffraction Study of Large Amplitude Coherent Optical Phonons in Laser-Excited Bismuth</title>
    <abstract language="eng">Femtosecond time-resolved X-ray diffraction was used to directly study optical phonons in laser-excited Bismuth. A periodic modulation of the diffraction efficiency reveals initially coherent lattice distortions with atomic displacements of nearly 10% of the nearest- neighbor-distance.</abstract>
    <parentTitle language="eng">Conference on Lasers and Electro-Optics, 1–6 June 2003, Baltimore, Maryland</parentTitle>
    <identifier type="url">https://opg.optica.org/abstract.cfm?uri=cleo-2003-CMZ6</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Klaus Sokolowski-Tinten</author>
    <author>Christian Blome</author>
    <author>Juris Blums</author>
    <author>Clemens Dietrich</author>
    <author>Alexander Tarsevitch</author>
    <author>Michael Horn-von Hoegen</author>
    <author>Dietrich von der Linde</author>
    <author>Andrea Cavalleri</author>
    <author>Martin Kammler</author>
    <author>Ingo Uschmann</author>
    <author>Eckhart Foerster</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4060</id>
    <completedYear/>
    <publishedYear>2009</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>1230</volume>
    <type>article</type>
    <publisherName>Springer</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Extreme Phonon Softening in Laser-excited Bismuth - Towards an Inverse Peierls-transition</title>
    <abstract language="eng">Large amplitude coherent optical phonons have been investigated in laser-excited Bismuth by means of femtosecond time-resolved X-ray diffraction. For absorbed laser fluences above 2 mJ/cm2, the experimental data reveal an extreme softening of the excited A1g-mode down to frequencies of about 1 THz, only 1/3 of the unperturbed A1g-frequency. At even stronger excitation the measured diffraction signals no longer exhibit an oscillatory behavior presenting strong indication that upon intense laser-excitation the Peierls-distortion, which defines the equilibrium structure of Bismuth, can be transiently reversed.</abstract>
    <parentTitle language="eng">MRS Online Proceedings Library</parentTitle>
    <identifier type="doi">10.1557/PROC-1230-MM03-05</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Wei Lu</author>
    <author>Matthieu Nicoul</author>
    <author>Uladzimir Shymanovich</author>
    <author>Alexander Tarsevitch</author>
    <author>Martin Kammler</author>
    <author>Michael Horn-von Hoegen</author>
    <author>Dietrich von der Linde</author>
    <author>Klaus Sokolowski-Tinten</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4085</id>
    <completedYear/>
    <publishedYear>2002</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>297</pageFirst>
    <pageLast>298</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Femtosecond X-ray diffraction of short-pulse irradiated semiconductors</title>
    <abstract language="eng">Summary form only given, as follow. Ultrafast optical-pump, X-ray diffraction probe experiments are providing new ways to study transient processes including the direct observation of the atomic motion by which many solid-state processes and chemical and biochemical reactions take place. Current table-top-terawatt femtosecond laser systems provide an attractive source of few-hundred femtosecond duration bursts of angstrom-scale X-ray radiation with fluxes comparable to standard rotating anode sources. Their compact size enables time resolved structural dynamics to be studied in the small laboratory with temporal resolution better than typical molecular vibrational periods. Ultrafast structural dynamics in crystalline samples are readily studied with such systems and experiments to be discussed in this talk include ultrafast non-thermal solid-to-liquid transition in thin single-crystal Ge-111 films grown on Si-111 substrates; ultrafast non-thermal solid-to-solid transitions in bulk vanadium dioxide from a low temperature insulating phase to a high temperature metallic phase; and harmonic and anharmonic coherent acoustic dynamics in layered Ge-111/Si-111 and bulk GaAs-111 samples. Future improvements in high-average power short-pulse lasers will enable the study of a wider class of materials such as amorphous solids or liquid-phase dynamics of simple molecules, while proposed 4th generation light sources based upon single-pass X-ray free-electron lasers will permit singleshot structural determination of complex biomolecules.</abstract>
    <parentTitle language="deu">Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges, 24-24 May 2002, Long Beach, CA, USA</parentTitle>
    <identifier type="doi">10.1109/CLEO.2002.1033997</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>C. W. Siders</author>
    <author>Andrea Cavalleri</author>
    <author>Csaba Tóth</author>
    <author>K. R. Wilson</author>
    <author>Jeff A. Squier</author>
    <author>C. P. J. Barty</author>
    <author>Martin Kammler</author>
    <author>Klaus Sokolowski-Tinten</author>
    <author>Michael Horn-von Hoegen</author>
    <author>D. von der Linde</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>high-speed techniques</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>X-ray diffraction</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>laser beam effects</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>semiconductor materials</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>solid-liquid transformations</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>solid-state phase transformations</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>metal-insulator transition</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4076</id>
    <completedYear/>
    <publishedYear>2003</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>287</pageFirst>
    <pageLast>289</pageLast>
    <pageNumber/>
    <edition/>
    <issue>6929</issue>
    <volume>422</volume>
    <type>article</type>
    <publisherName>Springer</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Femtosecond X-ray measurement of coherent lattice vibrations near the Lindemann stability limit</title>
    <abstract language="eng">The study of phase-transition dynamics in solids beyond a time-averaged kinetic description requires direct measurement of the changes in the atomic configuration along the physical pathways leading to the new phase. The timescale of interest is in the range 10(-14) to 10(-12) s. Until recently, only optical techniques were capable of providing adequate time resolution, albeit with indirect sensitivity to structural arrangement. Ultrafast laser-induced changes of long-range order have recently been directly established for some materials using time-resolved X-ray diffraction. However, the measurement of the atomic displacements within the unit cell, as well as their relationship with the stability limit of a structural phase, has to date remained obscure. Here we report time-resolved X-ray diffraction measurements of the coherent atomic displacement of the lattice atoms in photoexcited bismuth close to a phase transition. Excitation of large-amplitude coherent optical phonons gives rise to a periodic modulation of the X-ray diffraction efficiency. Stronger excitation corresponding to atomic displacements exceeding 10 per cent of the nearest-neighbour distance-near the Lindemann limit-leads to a subsequent loss of long-range order, which is most probably due to melting of the material.</abstract>
    <parentTitle language="eng">Nature</parentTitle>
    <identifier type="doi">10.1038/nature01490</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Klaus Sokolowski-Tinten</author>
    <author>Christian Blome</author>
    <author>Juris Blums</author>
    <author>Andrea Cavalleri</author>
    <author>Clemens Dietrich</author>
    <author>Alexander Tarasevitch</author>
    <author>Ingo Uschmann</author>
    <author>Eckhard Förster</author>
    <author>Martin Kammler</author>
    <author>Michael Horn-von Hoegen</author>
    <author>Dietrich von der Linde</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4092</id>
    <completedYear/>
    <publishedYear>2001</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>473</pageFirst>
    <pageLast>477</pageLast>
    <pageNumber/>
    <edition/>
    <issue>Pr2</issue>
    <volume>11</volume>
    <type>article</type>
    <publisherName>EDP</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Transient lattice dynamics in fs-laser-excited semiconductors probed by ultrafast X-ray diffraction</title>
    <abstract language="eng">A study of lattice dynamics in fs-laser-excited crystalline bulk Ge and Ge/Si-heterostructures, using time-resolved x-ray diffraction, was presented. Fast energy transport deep into the bulk of the material, coherent acoustic phonon dynamics, lattice anharmonicity, and vibrational transport across a buried interfaces were observed. Graphs showing time-dependent shifts of the centroid of the measured rocking curves in the Ge-overlayer and in the Si-substrate for different fluences, were presented.</abstract>
    <parentTitle language="eng">Journal de Physique IV</parentTitle>
    <identifier type="doi">10.1051/jp4:2001290</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Klaus Sokolowski-Tinten</author>
    <author>Michael Horn-von Hoegen</author>
    <author>D. von der Linde</author>
    <author>Andrea Cavalleri</author>
    <author>C. W. Siders</author>
    <author>F. L. H. Brown</author>
    <author>D. M. Leitner</author>
    <author>Csaba Tóth</author>
    <author>Jeff A. Squier</author>
    <author>C. P. J. Barty</author>
    <author>K. R. Wilson</author>
    <author>Martin Kammler</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4091</id>
    <completedYear/>
    <publishedYear>2001</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>281</pageFirst>
    <pageLast>283</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>66</volume>
    <type>article</type>
    <publisherName>Springer</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Time-resolved x-ray diffraction study of ultrafast acoustic phonon dynamics in Ge/Si-heterostructures</title>
    <abstract language="eng">Using time-resolved x-ray diffraction the ultafast strain dynamics in fs-laserexcited Ge/Si-heterostructures has been studied. A fluence dependent, anharmonic damping of the impulsively generated acoustic phonons and vibrational transport across the buried Ge/Si-interface are observed.</abstract>
    <parentTitle language="eng">Chemical Physics</parentTitle>
    <identifier type="doi">10.1007/978-3-642-56546-5_81</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Klaus Sokolowski-Tinten</author>
    <author>Andrea Cavalleri</author>
    <author>C. W. Siders</author>
    <author>F. L. H. Brown</author>
    <author>D. M. Leitner</author>
    <author>Csaba Tóth</author>
    <author>Martin Kammler</author>
    <author>Michael Horn-von Hoegen</author>
    <author>D. von der Linde</author>
    <author>Jeff A. Squier</author>
    <author>C. P. J. Barty</author>
    <author>K. R. Wilson</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4088</id>
    <completedYear/>
    <publishedYear>2002</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>115</pageFirst>
    <pageLast>116</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Structural dynamics in laser-excited solids investigated with femtosecond x-ray diffraction</title>
    <abstract language="eng">Summary form only given. Ultrashort x-ray pulses offer a unique combination of atomic-scale spatial and temporal resolution, which permits direct measurements of structural transients on an ultrafast time scale. Using time-resolved X-ray diffraction with femtosecond, multi-keV X-ray pulses we have studied transient lattice dynamics in optically excited semiconductors.</abstract>
    <parentTitle language="eng">2002 Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, 19-24 May 2002, Long Beach, CA, USA</parentTitle>
    <identifier type="doi">10.1109/QELS.2002.1031182</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Klaus Sokolowski-Tinten</author>
    <author>Christian Blome</author>
    <author>Clemens Dietrich</author>
    <author>Juris Blums</author>
    <author>Michael Horn-von Hoegen</author>
    <author>D. von der Linde</author>
    <author>Andrea Cavalleri</author>
    <author>Jeff A. Squier</author>
    <author>Martin Kammler</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4089</id>
    <completedYear/>
    <publishedYear>2001</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>87</volume>
    <type>article</type>
    <publisherName>APS</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Femtosecond x-ray measurement of ultrafast melting and large acoustic transients</title>
    <abstract language="eng">Time-resolved x-ray diffraction with ultrashort ( approximately 300 fs), multi-keV x-ray pulses has been used to study the femtosecond laser-induced solid-to-liquid phase transition in a thin crystalline layer of germanium. Nonthermal melting is observed to take place within 300-500 fs. Following ultrafast melting we observe strong acoustic perturbations evolving on a picosecond time scale.</abstract>
    <parentTitle language="eng">Physical review letters</parentTitle>
    <identifier type="doi">10.1103/PhysRevLett.87.225701</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Klaus Sokolowski-Tinten</author>
    <author>Christian Blome</author>
    <author>Clemens Dietrich</author>
    <author>A. Tarasevitch</author>
    <author>Michael Horn-von Hoegen</author>
    <author>D. von der Linde</author>
    <author>Andrea Cavalleri</author>
    <author>Jeff A. Squier</author>
    <author>Martin Kammler</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4084</id>
    <completedYear/>
    <publishedYear>2002</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>36</pageFirst>
    <pageLast>38</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>71</volume>
    <type>article</type>
    <publisherName>Optica Publishing Grou</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Femtosecond time-resolved X-ray diffraction study of ultrafast structural dynamics in laser-excited solids</title>
    <abstract language="eng">Time-resolved x-ray diffraction with sub-300 fs, multi-keV x-ray pulses was used to study ultrafast lattice dynamics in laser-irradiated germanium and bismuth. In bismuth strong excitation of optical phonons is observed prior to disordering of the material.</abstract>
    <parentTitle language="deu">International Conference on Ultrafast Phenomena, 12 May 2002, Vancouver Canada</parentTitle>
    <identifier type="doi">10.1007/978-3-642-59319-2_10</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Klaus Sokolowski-Tinten</author>
    <author>Christian Blome</author>
    <author>Clemens Dietrich</author>
    <author>A. Tarasevitch</author>
    <author>Michael Horn-von Hoegen</author>
    <author>D. von der Linde</author>
    <author>Andrea Cavalleri</author>
    <author>Jeff A. Squier</author>
    <author>Martin Kammler</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4093</id>
    <completedYear/>
    <publishedYear>2000</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>586</pageFirst>
    <pageLast>589</pageLast>
    <pageNumber/>
    <edition/>
    <issue>3</issue>
    <volume>85</volume>
    <type>article</type>
    <publisherName>APS</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Anharmonic lattice dynamics in germanium measured with ultrafast x-ray diffraction</title>
    <abstract language="eng">Damping of impulsively generated coherent acoustic oscillations in a femtosecond laser-heated thin germanium film is measured as a function of fluence by means of ultrafast x-ray diffraction. By simultaneously measuring picosecond strain dynamics in the film and in the unexcited silicon substrate, we separate anharmonic damping from acoustic transmission through the buried interface. The measured damping rate and its dependence on the calculated temperature of the thermal bath is consistent with estimated four-body, elastic dephasing times (T2) for 7-GHz longitudinal acoustic phonons in germanium.</abstract>
    <parentTitle language="eng">Physical review letters</parentTitle>
    <identifier type="doi">10.1103/PhysRevLett.85.586</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Andrea Cavalleri</author>
    <author>C. W. Siders</author>
    <author>F. L. H. Brown</author>
    <author>D. M. Leitner</author>
    <author>Csaba Tóth</author>
    <author>Jeff A. Squier</author>
    <author>C. P. J. Barty</author>
    <author>K. R. Wilson</author>
    <author>Klaus Sokolowski-Tinten</author>
    <author>Michael Horn-von Hoegen</author>
    <author>D. von der Linde</author>
    <author>Martin Kammler</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4095</id>
    <completedYear/>
    <publishedYear>2000</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName>Optica</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Time-resolved x-ray diffraction study of ultrafast acoustic phonon dynamics in Ge/Si-heterostructures</title>
    <abstract language="eng">Using time-resolved x-ray diffraction the ultafast strain dynamics in fs-laserexcited Ge/Si-heterostructures has been studied. A fluence dependent, anharmonic damping of the impulsively generated acoustic phonons and vibrational transport across the buried Ge/Si-interface are observed.</abstract>
    <parentTitle language="eng">International Conference on Ultrafast Phenomena , 9 July 2000, Charleston</parentTitle>
    <identifier type="url">https://opg.optica.org/abstract.cfm?uri=UP-2000-MF43</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Klaus Sokolowski-Tinten</author>
    <author>Michael Horn-von Hoegen</author>
    <author>D. von der Linde</author>
    <author>Andrea Cavalleri</author>
    <author>C. W. Siders</author>
    <author>F. L. H. Brown</author>
    <author>Csaba Tóth</author>
    <author>Jeff A. Squier</author>
    <author>C. P. J. Barty</author>
    <author>K. R. Wilson</author>
    <author>Martin Kammler</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Acoustic Phonon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Acoustic Transmission</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Carrier Diffusion</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Homogenous Expansion</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Lattice Anharmonicity</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4097</id>
    <completedYear/>
    <publishedYear>1999</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1340</pageFirst>
    <pageLast>1342</pageLast>
    <pageNumber/>
    <edition/>
    <issue>5443</issue>
    <volume>286</volume>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Detection of nonthermal melting by ultrafast X-ray diffraction</title>
    <abstract language="eng">Using ultrafast, time-resolved, 1.54 angstrom x-ray diffraction, thermal and ultrafast nonthermal melting of germanium, involving passage through nonequilibrium extreme states of matter, was observed. Such ultrafast, optical-pump, x-ray diffraction probe measurements provide a way to study many other transient processes in physics, chemistry, and biology, including direct observation of the atomic motion by which many solid-state processes and chemical and biochemical reactions take place.</abstract>
    <parentTitle language="eng">Science</parentTitle>
    <identifier type="doi">10.1126/science.286.5443.1340</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>C. W. Siders</author>
    <author>Andrea Cavalleri</author>
    <author>Klaus Sokolowski-Tinten</author>
    <author>Csaba Tóth</author>
    <author>T. Guo</author>
    <author>Martin Kammler</author>
    <author>Michael Horn-von Hoegen</author>
    <author>K. R. Wilson</author>
    <author>D. von der Linde</author>
    <author>C. P. J. Barty</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4094</id>
    <completedYear/>
    <publishedYear>2000</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>276</pageFirst>
    <pageLast>280</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>66</volume>
    <type>article</type>
    <publisherName>Springer</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Direct Observation of Ultrafast Non-thermal Melting by Ultrafast X-ray Diffraction</title>
    <abstract language="eng">Ultrafast nonthermal melting of femtosecond laser-irradiated germanium was observed directly for the first time using sub-picosecond, 1.54-angstrom x-ray diffraction. Such measurements allow the study of transient atomic motion fundamental to many processes in physics, chemistry, and biology.</abstract>
    <parentTitle language="deu">Ultrafast Phenomena XII</parentTitle>
    <identifier type="doi">10.1007/978-3-642-56546-5_80</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>C. W. Siders</author>
    <author>Andrea Cavalleri</author>
    <author>Klaus Sokolowski-Tinten</author>
    <author>Csaba Tóth</author>
    <author>T. Guo</author>
    <author>Martin Kammler</author>
    <author>Michael Horn-von Hoegen</author>
    <author>K. R. Wilson</author>
    <author>D. von der Linde</author>
    <author>C. P. J. Barty</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4099</id>
    <completedYear/>
    <publishedYear>1999</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>bookpart</type>
    <publisherName>Optica</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Lattice dynamics of femtosecond laser-excited semiconductors probed by ultrafast x-ray diffraction</title>
    <abstract language="eng">The present knowledge of the atomic structure of matter is to a large extent due to x-ray spectroscopies.</abstract>
    <parentTitle language="deu">Applications of High Field and Short Wavelength Sources VIII</parentTitle>
    <identifier type="doi">10.1364/HFSW.1999.PD3</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Klaus Sokolowski-Tinten</author>
    <author>D. von der Linde</author>
    <author>C. W. Siders</author>
    <author>Andrea Cavalleri</author>
    <author>Csaba Tóth</author>
    <author>T. Guo</author>
    <author>K. R. Wilson</author>
    <author>C. P. J. Barty</author>
    <author>Martin Kammler</author>
    <author>Michael Horn-von Hoegen</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4048</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>3</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>104</volume>
    <type>article</type>
    <publisherName>American Institute of Physics</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Comparing ultrafast surface and bulk heating using time-resolved electron diffraction</title>
    <abstract language="eng">From measurements of the transient Debye-Waller effect in Bismuth, we determine the buildup time of the random atomic motion resulting from the electronic relaxation after short pulse laser excitation. The surface sensitive reflection high energy electron diffraction and transmission electron diffraction yield a time constant of about 12 ps and 3 ps, respectively. The different energy transfer rates indicate relatively weak coupling between bulk and surface vibrational modes. (C) 2014 AIP Publishing LLC.</abstract>
    <parentTitle language="eng">Applied Physics Letters</parentTitle>
    <identifier type="doi">10.1063/1.4872055</identifier>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>C. Streubühr</author>
    <author>Annika Kalus</author>
    <author>Ping Zhou</author>
    <author>Manuel Ligges</author>
    <author>Anja Hanisch-Blicharski</author>
    <author>Martin Kammler</author>
    <author>U. Bovensiepen</author>
    <author>Michael Horn-von Hoegen</author>
    <author>D. von der Linde</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4058</id>
    <completedYear/>
    <publishedYear>2010</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>558</pageFirst>
    <pageLast>566</pageLast>
    <pageNumber/>
    <edition/>
    <issue>1</issue>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>AIP</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Coherent acoustic and optical phonons in laser-excited solids studied by ultrafast time-resolved X-ray diffraction</title>
    <abstract language="eng">We apply ultrafast time‐resolved X‐ray diffraction to directly study coherent acoustic and optical phonons in laser‐excited materials. In Au the ps acoustic response has been investigated with the particular goal to clarify the interplay of electronic and thermal pressure contributions. In Bi the extreme softening of the coherently excited A 1 g optical phonon presents strong indication that upon intense laser‐excitation the Peierls‐transition which determines the equilibrium structure of Bi can be reversed. In FeRh we studied the lattice response after a fast laser‐induced anti‐ferromagnetic to ferromagnetic phase transition.</abstract>
    <parentTitle language="eng">AIP Conference Proceedings</parentTitle>
    <identifier type="doi">10.1063/1.3507146</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Uladzimir Shymanovich</author>
    <author>Matthieu Nicoul</author>
    <author>Wei Lu</author>
    <author>A. Tarasevitch</author>
    <author>Martin Kammler</author>
    <author>Michael Horn-von Hoegen</author>
    <author>D. von der Linde</author>
    <author>Klaus Sokolowski-Tinten</author>
    <author>Claude Phipps</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4052</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>41</volume>
    <type>conferenceobject</type>
    <publisherName>EPJ</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Ultrafast time resolved reflection high energy electron diffraction with tilted pump pulse fronts</title>
    <abstract language="eng">We present time-resolved RHEED from a laser excited Pb(111) surface using a pulse front tilter for the compensation of the velocity mismatch of electrons and light. The laser pulses with tilted fronts were characterized by a spatially resolving cross correlator. The response of the surface upon excitation was observed to be less than 2 ps.</abstract>
    <parentTitle language="eng">EPJ Web of Conferences - XVIIIth International Conference on Ultrafast Phenomena</parentTitle>
    <identifier type="doi">10.1051/epjconf/20134110016</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <author>Ping Zhou</author>
    <author>C. Streubühr</author>
    <author>Annika Kalus</author>
    <author>Tim Frigge</author>
    <author>S. Wall</author>
    <author>Anja Hanisch-Blicharski</author>
    <author>Martin Kammler</author>
    <author>Manuel Ligges</author>
    <author>U. Bovensiepen</author>
    <author>D. von der Linde</author>
    <author>Michael Horn-von Hoegen</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="oaweg" number="">Gold Open Access- Erstveröffentlichung in einem/als Open-Access-Medium</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4059</id>
    <completedYear/>
    <publishedYear>2010</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>ME41</issue>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Optica Publishing Group</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Transient reversal of a Peierls-transition: Extreme phonon softening in laser-excited Bismuth</title>
    <abstract language="eng">Laser-excited coherent optical phonons in Bismuth were investigated using time-resolved X-ray diffraction. The observed extreme softening of the excited A1g-mode presents strong indication that the Peierls-distortion defining the equilibrium structure of Bismuth is transiently reversed.</abstract>
    <parentTitle language="eng">International Conference on Ultrafast Phenomena, Snowmass</parentTitle>
    <identifier type="doi">10.1364/UP.2010.ME41</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="OtherSeries">OSA Technical Digest (CD)</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Wei Lu</author>
    <author>Matthieu Nicoul</author>
    <author>Uladzimir Shymanovich</author>
    <author>A. Tarasevitch</author>
    <author>Martin Kammler</author>
    <author>Michael Horn-von Hoegen</author>
    <author>D. von der Linde</author>
    <author>Klaus Sokolowski-Tinten</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4072</id>
    <completedYear/>
    <publishedYear>2005</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>170</pageFirst>
    <pageLast>174</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>79</volume>
    <type>article</type>
    <publisherName>Springer</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Ultrafast X-ray diffraction</title>
    <abstract language="eng">In the last few years the generation of femtosecond pulses in the X-ray regime has become possible. These ultrashort X-ray pulses have enabled femtosecond time- resolution to be extended to X-rays.</abstract>
    <parentTitle language="deu">Ultrafast Phenomena XIV</parentTitle>
    <identifier type="doi">10.1007/3-540-27213-5_53</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="OtherSeries">Springer Series in Chemical Physics , 79</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Klaus Sokolowski-Tinten</author>
    <author>Christian Blome</author>
    <author>Juris Blums</author>
    <author>Uladzimir Shymanovich</author>
    <author>Matthieu Nicoul</author>
    <author>Andrea Cavalleri</author>
    <author>A. Tarasevitch</author>
    <author>Michael Horn-von Hoegen</author>
    <author>Martin Kammler</author>
    <author>D. von der Linde</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4065</id>
    <completedYear/>
    <publishedYear>2007</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>633</pageFirst>
    <pageLast>636</pageLast>
    <pageNumber/>
    <edition/>
    <issue>5812</issue>
    <volume>315</volume>
    <type>article</type>
    <publisherName>AAAS</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Ultrafast bond softening in bismuth: mapping a solid's interatomic potential with X-rays</title>
    <abstract language="eng">Intense femtosecond laser excitation can produce transient states of matter that would otherwise be inaccessible to laboratory investigation. At high excitation densities, the interatomic forces that bind solids and determine many of their properties can be substantially altered. Here, we present the detailed mapping of the carrier density-dependent interatomic potential of bismuth approaching a solid-solid phase transition. Our experiments combine stroboscopic techniques that use a high-brightness linear electron accelerator-based x-ray source with pulse-by-pulse timing reconstruction for femtosecond resolution, allowing quantitative characterization of the interatomic potential energy surface of the highly excited solid.</abstract>
    <parentTitle language="eng">Science</parentTitle>
    <identifier type="doi">10.1126/science.1135009</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>D. M. Fritz</author>
    <author>D. A. Reis</author>
    <author>B. Adams</author>
    <author>R. A. Akre</author>
    <author>J. Arthur</author>
    <author>Christian Blome</author>
    <author>P. H. Bucksbaum</author>
    <author>A. L. Cavalieri</author>
    <author>S. Engemann</author>
    <author>S. Fahy</author>
    <author>R. W. Falcone</author>
    <author>P. H. Fuoss</author>
    <author>K. J. Gaffney</author>
    <author>M. J. George</author>
    <author>J. Hajdu</author>
    <author>M. P. Hertlein</author>
    <author>P. B. Hillyard</author>
    <author>Michael Horn-von Hoegen</author>
    <author>Martin Kammler</author>
    <author>J. Kaspar</author>
    <author>R. Kienberger</author>
    <author>P. Krejcik</author>
    <author>S. H. Lee</author>
    <author>A. M. Lindenberg</author>
    <author>B. McFarland</author>
    <author>D. Meyer</author>
    <author>T. Montagne</author>
    <author>E. D. Murray</author>
    <author>A. J. Nelson</author>
    <author>Matthieu Nicoul</author>
    <author>R. Pahl</author>
    <author>J. Rudati</author>
    <author>H. Schlarb</author>
    <author>D. P. Siddons</author>
    <author>Klaus Sokolowski-Tinten</author>
    <author>Th Tschentscher</author>
    <author>D. von der Linde</author>
    <author>J. B. Hastings</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4105</id>
    <completedYear/>
    <publishedYear>2004</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>170</pageFirst>
    <pageLast>174</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>79</volume>
    <type>conferenceobject</type>
    <publisherName>Springer</publisherName>
    <publisherPlace>Berlin, Heidelberg</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Ultrafast X-ray diffraction</title>
    <abstract language="eng">In the last few years the generation of femtosecond pulses in the X-ray regime has become possible. These ultrashort X-ray pulses have enabled femtosecond time- resolution to be extended to X-rays.</abstract>
    <parentTitle language="eng">Ultrafast Phenomena XIV</parentTitle>
    <identifier type="isbn">978-3-540-27213-7</identifier>
    <identifier type="doi">10.1007/3-540-27213-5_53</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="OtherSeries">Springer Series in Chemical Physics ; 79</enrichment>
    <enrichment key="ConferenceStatement">Proceedings of the 14th International Conference, Niigata, Japan, July 25--30, 2004</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Klaus Sokolowski-Tinten</author>
    <author>Christian Blome</author>
    <author>Juris Blums</author>
    <author>Uladzimir Shymanovich</author>
    <author>Matthieu Nicoul</author>
    <author>Andrea Cavalleri</author>
    <author>A. Tarasevitch</author>
    <author>Michael Horn-von Hoegen</author>
    <author>Martin Kammler</author>
    <author>Dietrich von der Linde</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4100</id>
    <completedYear>2002</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>preprint</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Dynamics of atomic steps on Si(001) studied by temporal LEED spectroscopy [Poster]</title>
    <abstract language="eng">While surface kinetics measurements for single atom diffusion have proliferated, little work exists attempting to measure surface dynamics under equilibrium conditions. We will present our recent work on developing Temporal LEED Spectroscopy (TLS) as a dynamic probe of surfaces capable of kinetics measurements at both high temperatures and surface coverages. By tuning the diffraction to specific structural entities such as steps, islands, etc., and monitoring the diffracted signal as a function of time, dynamics information about these structures can be obtained. As an example we will present TLS results for the dynamics of step fluctuations on Si(001) [1]. We have measured activation energies and identified step-edge diffusion as the rate limiting process for 950K &lt; T &lt; 1130K. Although this result is in apparent disagreement with earlier work, a careful analysis, considering crossover temperatures between different microscopic processes, can reconcile the differences. 1. M. Kammler, et al., Phys. Rev. B (in press).</abstract>
    <identifier type="url">https://www.researchgate.net/publication/252546721_Dynamics_of_atomic_steps_on_Si001_studied_by_temporal_LEED_spectroscopy_poster</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Michael C. Tringides</author>
    <author>E. H. Conrad</author>
    <author>Andreas Menzel</author>
    <author>Neil R. Voss</author>
    <author>Martin Kammler</author>
    <author>Michael Horn-von Hoegen</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4074</id>
    <completedYear/>
    <publishedYear>2004</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>3056</pageFirst>
    <pageLast>3058</pageLast>
    <pageNumber>3</pageNumber>
    <edition/>
    <issue>15</issue>
    <volume>85</volume>
    <type>article</type>
    <publisherName>American Institute of Physics</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Transition in growth mode by competing strain relaxation mechanisms</title>
    <abstract language="eng">Surfactant mediated epitaxy of Si(1−x)Gex alloys on Si(111) can, besides technological importance, clarify the influence of the lattice mismatch during surfactant mediated heteroepitaxial growth. For low Ge concentration we find an immediate layer-by-layer growth, whereas at high Ge concentration a roughening transition followed by relaxation of the lattice mismatch in a periodic dislocation network is preferred. This behavior can be explained by comparing the dislocation nucleation rate on a smooth surface with the island nucleation rate on a pseudomorphic film.</abstract>
    <parentTitle language="eng">Applied Physics Letters</parentTitle>
    <subTitle language="eng">surfactant mediated epitaxy of SiGe alloys on Si</subTitle>
    <identifier type="doi">10.1063/1.1803914</identifier>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Martin Kammler</author>
    <author>Michael Horn-von Hoegen</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4053</id>
    <completedYear/>
    <publishedYear>2012</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>18</issue>
    <volume>109</volume>
    <type>article</type>
    <publisherName>APS</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Atomistic picture of charge density wave formation at surfaces</title>
    <abstract language="eng">We used ultrafast electron diffraction and density-functional theory calculations to gain insight into the charge density wave (CDW) formation on In/Si(111). Weak excitation by a femtosecond-laser pulse results in the melting of the CDW. The immediate freezing is hindered by a barrier for the motion of atoms during the phase transition: The melted CDW constitutes a long-lived, supercooled phase and is strong evidence for a first-order transition. The freezing into the CDW is triggered by preexisting adsorbates. Starting at these condensation nuclei, the CDW expands one dimensionally on the In/Si(111) surface, with a constant velocity of more than 80 m/s.</abstract>
    <parentTitle language="eng">Physical review letters</parentTitle>
    <identifier type="doi">10.1103/PhysRevLett.109.186101</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Simone Wall</author>
    <author>Boris Krenzer</author>
    <author>Stefan Wippermann</author>
    <author>Simone Sanna</author>
    <author>Friedrich Klasing</author>
    <author>Anja Hanisch-Blicharski</author>
    <author>Martin Kammler</author>
    <author>Wolf Gero Schmidt</author>
    <author>Michael Horn-von Hoegen</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4055</id>
    <completedYear/>
    <publishedYear>2012</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>45</pageFirst>
    <pageLast>50</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName>Springer</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Nanoscale Heat Transport in Self-Organized Ge Clusters on Si(001)</title>
    <abstract language="eng">Ultrafast time resolved transmission electron diffraction (TED) in a reflection geometry was used to study the cooling behavior of self-organized, well defined nanoscale germanium hut and dome clusters on Si(001). The clusters were heated in a pump-probe scheme by fs-laser pulses. The resulting transient temperature rise was then determined from the drop in diffraction intensity caused by the Debye-Waller effect. From a cooling time of τ=177 ps we estimated a strongly reduced heat transfer compared with homogeneous films of equivalent thickness.</abstract>
    <parentTitle language="eng">MRS Online Proceedings Library</parentTitle>
    <identifier type="doi">10.1557/opl.2013.148</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Tim Frigge</author>
    <author>Annika Kalus</author>
    <author>Friedrich Klasing</author>
    <author>Martin Kammler</author>
    <author>Anja Hanisch-Blicharski</author>
    <author>Michael Horn-von Hoegen</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4064</id>
    <completedYear/>
    <publishedYear>2009</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName>Springer</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Ultra-fast Time-Resolved Electron Diffraction of Strongly Driven Phase Transitions on Silicon Surfaces</title>
    <abstract language="eng">The dynamics of strongly driven phase transitions at surfaces are studied by ultra-fast time-resolved reflection high energy electron diffraction. The surfaces are excited by an intense fs-laser pulse (pump) and probed by an ultra-short electron pulse with variable time delay. The order-disorder phase transition from a c(4 Ã— 2) to a(2 Ã— 1) of the bare Si(001) surface shows a transient decrease of the intensity of the c(4 Ã— 2) spots which recovers on a time scale of a few hundred picoseconds indicating the excitation of the phase transition. On Si(111) a monolayer of Indium induces a (4 Ã— 1) reconstruction which undergoes a Peierls like phase transition to a (8 Ã— "2") reconstruction below 100 K. Upon laser excitation with a fluence of 3.4 mJ/cm 2 at a temperature of 72 K the phase transition was strongly driven. The (8 Ã— "2")-diffraction spots instantaneously disappears, while the intensity of the (4 Ã— 1)-spots increases. This increase of the (4 Ã— 1) spot intensity excludes an explanation by the Debye-Waller-Effect and is evidence for a true structural phase transition at a surface. Â© 2010 Materials Research Society.</abstract>
    <parentTitle language="eng">MRS Online Proceedings Library</parentTitle>
    <identifier type="doi">10.1557/PROC-1230-MM03-09</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Simone Möllenbeck</author>
    <author>Anja Hanisch-Blicharski</author>
    <author>Paul Schneider</author>
    <author>Manuel Ligges</author>
    <author>Ping Zhou</author>
    <author>Martin Kammler</author>
    <author>Boris Krenzer</author>
    <author>Michael Horn-von Hoegen</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4063</id>
    <completedYear/>
    <publishedYear>2009</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>6</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName>Springer</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Transient Cooling of Ultrathin Epitaxial Bi(111)-Films on Si(111) Upon Femtosecond Laser Excitation Studied by Ultrafast Reflection High Energy Electron Diffraction</title>
    <abstract language="eng">With time resolved ultrafast electron diffraction the cooling process across the interface between a thin film and the underlying substrate was studied after excitation with short laser pulses. From the exponential decay of the surface temperature evolution a thermal boundary conductance of 1430 W/(cm2K) is determined for a 9.7 nm thin Bi(111) film on Si(111). A linear dependence between laser fluence and initial temperature rise was measured for film-thicknesses between 2.5 nm and 34.5 nm. The ratio of initial temperature rise and laser fluence for different film-thicknesses is compared to a model taking multilayer optics into account. The data agree well with this model.</abstract>
    <parentTitle language="eng">MRS Online Proceedings Library</parentTitle>
    <identifier type="doi">10.1557/PROC-1172-T04-08</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Anja Hanisch-Blicharski</author>
    <author>Boris Krenzer</author>
    <author>Simone Möllenbeck</author>
    <author>Manuel Ligges</author>
    <author>Ping Zhou</author>
    <author>Martin Kammler</author>
    <author>Michael Horn-von Hoegen</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4070</id>
    <completedYear/>
    <publishedYear>2005</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>570</pageFirst>
    <pageLast>576</pageLast>
    <pageNumber/>
    <edition/>
    <issue>4</issue>
    <volume>69</volume>
    <type>article</type>
    <publisherName>IOP</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Strain state analysis of hetero-epitaxial systems</title>
    <abstract language="eng">We present a new method to analyze the strain state of epitaxial hetero structures by high-resolution spot profile analysis low-energy electron diffraction. From the variation of the spot profiles with the vertical scattering vector we determine the hetero film roughness, the change of interlayer spacing due to tetragonal distortion, and the variation of the interlayer distance due to partial relaxation of the strained rough film. The practical implementation of this method is simple and can be used to determine the onset of strain-relieving defects during the growth process.</abstract>
    <parentTitle language="eng">Europhysics Letters</parentTitle>
    <identifier type="doi">10.1209/epl/i2004-10399-6</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>A. A. Al-Falou</author>
    <author>Martin Kammler</author>
    <author>Michael Horn-von Hoegen</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4069</id>
    <completedYear/>
    <publishedYear>2005</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>56</pageFirst>
    <pageLast>60</pageLast>
    <pageNumber/>
    <edition/>
    <issue>1-3</issue>
    <volume>576</volume>
    <type>article</type>
    <publisherName>Elsevier</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Low energy electron diffraction of epitaxial growth of bismuth on Si(111)</title>
    <abstract language="eng">The epitaxial growth of Bi on Si(1 1 1) studied by spot profile analyzing low energy electron diffraction shows for low coverage rotationally disordered Bi cluster with preferred orientations following the threefold symmetry of the Si substrate. With further deposition the Bi cluster coalesces and the surface orientation changes from the pseudo cubic Bi(1 1 0) surface orientation of the Bi cluster into the hexagonal Bi(1 1 1) surface of the resulting Bi film.</abstract>
    <parentTitle language="eng">Surface Science</parentTitle>
    <identifier type="doi">10.1016/j.susc.2004.11.033</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Martin Kammler</author>
    <author>Michael Horn-von Hoegen</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Bismuth</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Epitaxial growth</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>LEED</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>low energy electron diffraction</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Structural transition</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4086</id>
    <completedYear/>
    <publishedYear>2002</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>117</pageFirst>
    <pageLast>127</pageLast>
    <pageNumber/>
    <edition/>
    <issue>1-2</issue>
    <volume>512</volume>
    <type>article</type>
    <publisherName>Elsevier</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Kinetics of Au induced faceting of vicinal Si(111)</title>
    <abstract language="eng">Au induced faceting of vicinal Si(1 1 1) has been studied during adsorption at elevated temperature by spot profile analyzing of low energy electron diffraction and after quenching to room temperature by scanning tunneling microscopy. On the surfaces inclined towards five different types of facets form with increasing Au coverage at adsorption temperatures Tads below 800 °C. They are (4 4 3), (7 7 5), (5 5 3), a stepped (2 2 1), and the (3 3 1) facets. Atomic models for the (5 5 3) and (7 7 5) facet planes are proposed on the basis of high resolution STM images. At C we found the formation of an ordered step train which covers the entire surface. With further increasing Au coverage the stepped surface decomposes again into (1 1 1) terraces and step bunches. Driving force is the formation of the Si(1 1 1)-(5×2)–Au reconstruction.</abstract>
    <parentTitle language="eng">Surface Science</parentTitle>
    <identifier type="doi">10.1016/S0039-6028(02)01666-7</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>R. Hild</author>
    <author>C. Seifert</author>
    <author>Martin Kammler</author>
    <author>Frank-Joachim Meyer zu Heringdorf</author>
    <author>Michael Horn-von Hoegen</author>
    <author>R.A Zhachuk</author>
    <author>B.Z Olshanetsky</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Low energy electron diffraction (LEED)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Scanning tunneling microscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Gold</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Faceting</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Adsorption kinetics</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Step formation and bunching</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4096</id>
    <completedYear/>
    <publishedYear>1999</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>579</pageFirst>
    <pageLast>582</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>343-344</volume>
    <type>article</type>
    <publisherName>Elsevier</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Bi surfactant mediated epitaxy of Ge on Si(111)</title>
    <abstract language="eng">We have tested Bi for the surfactant mediated epitaxy of Ge on Si(111). Islanding of Ge is prevented and a 2D layer growth of smooth and continuous Ge films is observed. The lattice mismatch is accommodated by a periodic array of dislocations confined to the Si/Ge interface. The large covalent radius of Bi reduces the binding energy, allowing Very efficient segregation and low doping levels even at low growth temperatures. Unfortunately, this results also in a high Bi desorption flux limiting the possible growth temperatures below 600 degrees C. Consequently the Ge films show a high defect density in the order of 10(8) cm(-2) for stacking faults and 10(9) cm(-2) for dislocations which limit electron Hall mobility to values below 700 cm(2)/V s at room temperature.</abstract>
    <parentTitle language="eng">Thin Solid Films</parentTitle>
    <identifier type="doi">10.1016/S0040-6090(98)01659-9</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Michael Horn-von Hoegen</author>
    <author>Frank-Joachim Meyer zu Heringdorf</author>
    <author>Martin Kammler</author>
    <author>C. Schaeffer</author>
    <author>D. Reinking</author>
    <author>K. R. Hofmann</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Hall mobility</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Heteroepitaxial growth</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Surfactants</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Doping</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Molecular beam epitaxy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Germanium</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Bismuth</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Low energy electron diffraction</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Scanning electron microscopy</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4098</id>
    <completedYear/>
    <publishedYear>1999</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>503</pageFirst>
    <pageLast>504</pageLast>
    <pageNumber/>
    <edition/>
    <issue>6</issue>
    <volume>35</volume>
    <type>article</type>
    <publisherName>IET</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Fabrication of high-mobility Ge p-channel MOSFETs on Si substrates</title>
    <abstract language="eng">The first fabrication of Ge p-channel MOSFETs (p-MOSFETs) on Si substrates is reported. A CMOS compatible process based on relaxed Ge layers grown on Si(111) substrates by surfactant mediated epitaxy (SME) was used. The non-optimised low temperature process yielded normally-off Ge p-MOSFETs with record channel drift mobilities of 430 cm&lt;sup&gt;2&lt;/sup&gt;/Vs</abstract>
    <parentTitle language="eng">Electronics Letters</parentTitle>
    <identifier type="doi">10.1049/el:19990349</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>D. Reinking</author>
    <author>Martin Kammler</author>
    <author>N. Hoffmann</author>
    <author>Michael Horn-von Hoegen</author>
    <author>K. R. Hofmann</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>CMOS integrated circuits</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>germanium</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>carrier mobility</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>epitaxial growth</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>integrated circuit technology</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>elemental semiconductors</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>semiconductor growth</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>MOSFET</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Insulated gate field effect transistors</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Thin film growth and epitaxy</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4066</id>
    <completedYear/>
    <publishedYear>2006</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>6</issue>
    <volume>96</volume>
    <type>article</type>
    <publisherName>APS</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Less strain energy despite fewer misfit dislocations: the impact of ordering</title>
    <abstract language="eng">The average strain state of Ge films grown on Si(111) by surfactant mediated epitaxy has been compared to the ordering of the interfacial misfit dislocation network. Surprisingly, a smaller degree of average lattice relaxation was found in films grown at higher temperature. On the other hand, these films exhibit a better ordered dislocation network. This effect energetically compensates the higher strain at higher growth temperature, leading to the conclusion that, apart from the formation of misfit dislocations, their ordering represents an important channel for lattice-strain energy relaxation.</abstract>
    <parentTitle language="eng">Physical review letters</parentTitle>
    <identifier type="doi">10.1103/PhysRevLett.96.066101</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Thomas Schmidt</author>
    <author>Roland Kröger</author>
    <author>Jan Ingo Flege</author>
    <author>Michael Horn-von Hoegen</author>
    <author>T. Clausen</author>
    <author>J. Falta</author>
    <author>Andreas Janzen</author>
    <author>P. Zahl</author>
    <author>P. Kury</author>
    <author>Martin Kammler</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4051</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>2</pageFirst>
    <pageLast>8</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>127</volume>
    <type>article</type>
    <publisherName>Elsevier</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Ultra-fast electron diffraction at surfaces: from nanoscale heat transport to driven phase transitions</title>
    <abstract language="eng">Many fundamental processes of structural changes at surfaces occur on a pico- or femtosecond time scale. In order to study such ultra-fast processes, we have combined modern surface science techniques with fs-laser pulses in a pump-probe scheme. Reflection high energy electron diffraction (RHEED) with grazing incident electrons ensures surface sensitivity for the probing electron pulses. Utilizing the Debye-Waller effect, we studied the cooling of vibrational excitations in monolayer adsorbate systems or the nanoscale heat transport from an ultra-thin film through a hetero-interface on the lower ps-time scale. The relaxation dynamics of a driven phase transition far away from thermal equilibrium is demonstrated with the In-induced (8×2) reconstruction on Si(111). This surface exhibits a Peierls-like phase transition at 100K from a (8×2) ground state to (4×1) excited state. Upon excitation by a fs-laser pulse, this structural phase transition is driven into an excited (4×1) state at a sample temperature of 20K. Relaxation into the (8×2) ground state occurs after more than 150 ps.</abstract>
    <parentTitle language="eng">Ultramicroscopy</parentTitle>
    <identifier type="doi">10.1016/j.ultramic.2012.07.017</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Anja Hanisch-Blicharski</author>
    <author>Andreas Janzen</author>
    <author>Boris Krenzer</author>
    <author>S. Wall</author>
    <author>Friedrich Klasing</author>
    <author>Annika Kalus</author>
    <author>Tim Frigge</author>
    <author>Martin Kammler</author>
    <author>Michael Horn-von Hoegen</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4054</id>
    <completedYear/>
    <publishedYear>2012</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>6905</pageFirst>
    <pageLast>6908</pageLast>
    <pageNumber/>
    <edition/>
    <issue>23</issue>
    <volume>520</volume>
    <type>article</type>
    <publisherName>Elsevier</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">High-quality epitaxial Bi(111) films on Si(111) by isochronal annealing</title>
    <abstract language="eng">Bi(111) films grown on Si(111) at room temperature show a significantly higher roughness compared to Bi films grown on Si(100) utilizing a kinetic pathway based on a low-temperature process. Isochronal annealing steps of 3 min duration each with temperatures up to 200 °C cause a relaxation of the Bi films' lattice parameter toward the Bi bulk value and yield an atomically flat Bi surface. Driving force for the relaxation and surface reordering is the magic mismatch of 11 Bi atoms to 13 Si atoms that emerges at annealing temperatures above 150 °C and reduces the remaining strain to less than 0.2%.</abstract>
    <parentTitle language="eng">Thin Solid Films</parentTitle>
    <identifier type="doi">10.1016/j.tsf.2012.06.004</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Thomas Payer</author>
    <author>C. Klein</author>
    <author>M. Acet</author>
    <author>V. Ney</author>
    <author>Martin Kammler</author>
    <author>Frank-Joachim Meyer zu Heringdorf</author>
    <author>Michael Horn-von Hoegen</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Epitaxy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Strain</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Annealing</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Bismuth</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Silicon</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4062</id>
    <completedYear/>
    <publishedYear>2009</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>2</issue>
    <volume>80</volume>
    <type>article</type>
    <publisherName>APS</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Phonon confinement effects in ultrathin epitaxial bismuth films on silicon studied by time-resolved electron diffraction</title>
    <abstract language="eng">The transient temperature evolution of ultrathin bismuth films, epitaxially grown on a silicon single crystal, upon femtosecond laser excitation is studied by time-resolved electron diffraction. The exponential decay of the film temperature is explained by phonon reflection at the interface, which results in a strongly reduced thermal conduction in the cross plane of the layered system. The thermal boundary conductance is found to be as low as 1273 W/(K cm2). Model calculations, including phonon confinement effects, explain the linear relationship between the observed film-temperature decay constant and the film thickness. Even for 2.5 nm thin films the phonon transmission probability across the interface is given by bulk properties. Our simulations show that phonon confinement effects are negligible for bismuth-film thicknesses larger than 1 nm.</abstract>
    <parentTitle language="eng">Physical Review B</parentTitle>
    <identifier type="doi">10.1103/PhysRevB.80.024307</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Boris Krenzer</author>
    <author>Anja Hanisch-Blicharski</author>
    <author>Paul Schneider</author>
    <author>Thomas Payer</author>
    <author>Simone Möllenbeck</author>
    <author>O. Osmani</author>
    <author>Martin Kammler</author>
    <author>R. Meyer</author>
    <author>Michael Horn-von Hoegen</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4057</id>
    <completedYear/>
    <publishedYear>2011</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>3</issue>
    <volume>82</volume>
    <type>article</type>
    <publisherName>American Institute of Physics</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Lost in reciprocal space? Determination of the scattering condition in spot profile analysis low-energy electron diffraction</title>
    <abstract language="eng">The precise knowledge of the diffraction condition, i.e., the angle of incidence and electron energy, is crucial for the study of surface morphology through spot profile analysis low-energy electron diffraction (LEED). We demonstrate four different procedures to determine the diffraction condition: employing the distortion of the LEED pattern under large angles of incidence, the layer-by-layer growth oscillations during homoepitaxial growth, a G(S) analysis of a rough surface, and the intersection of facet rods with 3D Bragg conditions.</abstract>
    <parentTitle language="eng">Review of scientific instruments</parentTitle>
    <identifier type="doi">10.1063/1.3554305</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>C. Klein</author>
    <author>T. Nabbefeld</author>
    <author>H. Hattab</author>
    <author>D. Meyer</author>
    <author>G. Jnawali</author>
    <author>Martin Kammler</author>
    <author>Frank-Joachim Meyer zu Heringdorf</author>
    <author>A. Golla-Franz</author>
    <author>B. H. Müller</author>
    <author>Thomas Schmidt</author>
    <author>M. Henzler</author>
    <author>Michael Horn-von Hoegen</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4071</id>
    <completedYear/>
    <publishedYear>2005</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>11</issue>
    <volume>86</volume>
    <type>article</type>
    <publisherName>AIP</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Surfactant-mediated epitaxy of Ge on Si(111): Beyond the surface</title>
    <abstract language="eng">For a characterization of interface and “bulk” properties of Ge films grown on Si(111) by Sb surfactant-mediated epitaxy, grazing incidence x-ray diffraction and transmission electron microscopy have been used. The interface roughness, defect structure, and strain state have been investigated in dependence of film thickness and growth temperature. For all growth parameters, atomically smooth interfaces are observed. For thin Ge layers, about 75% of the strain induced by the lattice mismatch is relaxed by misfit dislocations at the Ge/Si interface. Only a slight increase of the degree of relaxation is found for thicker films. At growth temperatures below about 600 °C, the formation of twins is observed, which can be avoided at higher temperatures.</abstract>
    <parentTitle language="eng">Applied Physics Letters</parentTitle>
    <identifier type="doi">10.1063/1.1882760</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Thomas Schmidt</author>
    <author>Roland Kröger</author>
    <author>T. Clausen</author>
    <author>J. Falta</author>
    <author>Andreas Janzen</author>
    <author>Martin Kammler</author>
    <author>P. Kury</author>
    <author>P. Zahl</author>
    <author>Michael Horn-von Hoegen</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4049</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>14</issue>
    <volume>111</volume>
    <type>article</type>
    <publisherName>American Physical Society</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Abstract - A Reply to the Comment by H. Shim et al.</title>
    <parentTitle language="eng">Physical review letters</parentTitle>
    <identifier type="doi">10.1103/PhysRevLett.111.149602</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Tim Frigge</author>
    <author>S. Wall</author>
    <author>Boris Krenzer</author>
    <author>St. Wippermann</author>
    <author>Simone Sanna</author>
    <author>Friedrich Klasing</author>
    <author>Anja Hanisch-Blicharski</author>
    <author>Martin Kammler</author>
    <author>Wolf Gero Schmidt</author>
    <author>Michael Horn-von Hoegen</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
</export-example>
