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  <doc>
    <id>4097</id>
    <completedYear/>
    <publishedYear>1999</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1340</pageFirst>
    <pageLast>1342</pageLast>
    <pageNumber/>
    <edition/>
    <issue>5443</issue>
    <volume>286</volume>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Detection of nonthermal melting by ultrafast X-ray diffraction</title>
    <abstract language="eng">Using ultrafast, time-resolved, 1.54 angstrom x-ray diffraction, thermal and ultrafast nonthermal melting of germanium, involving passage through nonequilibrium extreme states of matter, was observed. Such ultrafast, optical-pump, x-ray diffraction probe measurements provide a way to study many other transient processes in physics, chemistry, and biology, including direct observation of the atomic motion by which many solid-state processes and chemical and biochemical reactions take place.</abstract>
    <parentTitle language="eng">Science</parentTitle>
    <identifier type="doi">10.1126/science.286.5443.1340</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>C. W. Siders</author>
    <author>Andrea Cavalleri</author>
    <author>Klaus Sokolowski-Tinten</author>
    <author>Csaba Tóth</author>
    <author>T. Guo</author>
    <author>Martin Kammler</author>
    <author>Michael Horn-von Hoegen</author>
    <author>K. R. Wilson</author>
    <author>D. von der Linde</author>
    <author>C. P. J. Barty</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4094</id>
    <completedYear/>
    <publishedYear>2000</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>276</pageFirst>
    <pageLast>280</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>66</volume>
    <type>article</type>
    <publisherName>Springer</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Direct Observation of Ultrafast Non-thermal Melting by Ultrafast X-ray Diffraction</title>
    <abstract language="eng">Ultrafast nonthermal melting of femtosecond laser-irradiated germanium was observed directly for the first time using sub-picosecond, 1.54-angstrom x-ray diffraction. Such measurements allow the study of transient atomic motion fundamental to many processes in physics, chemistry, and biology.</abstract>
    <parentTitle language="deu">Ultrafast Phenomena XII</parentTitle>
    <identifier type="doi">10.1007/978-3-642-56546-5_80</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>C. W. Siders</author>
    <author>Andrea Cavalleri</author>
    <author>Klaus Sokolowski-Tinten</author>
    <author>Csaba Tóth</author>
    <author>T. Guo</author>
    <author>Martin Kammler</author>
    <author>Michael Horn-von Hoegen</author>
    <author>K. R. Wilson</author>
    <author>D. von der Linde</author>
    <author>C. P. J. Barty</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4099</id>
    <completedYear/>
    <publishedYear>1999</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>bookpart</type>
    <publisherName>Optica</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Lattice dynamics of femtosecond laser-excited semiconductors probed by ultrafast x-ray diffraction</title>
    <abstract language="eng">The present knowledge of the atomic structure of matter is to a large extent due to x-ray spectroscopies.</abstract>
    <parentTitle language="deu">Applications of High Field and Short Wavelength Sources VIII</parentTitle>
    <identifier type="doi">10.1364/HFSW.1999.PD3</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Klaus Sokolowski-Tinten</author>
    <author>D. von der Linde</author>
    <author>C. W. Siders</author>
    <author>Andrea Cavalleri</author>
    <author>Csaba Tóth</author>
    <author>T. Guo</author>
    <author>K. R. Wilson</author>
    <author>C. P. J. Barty</author>
    <author>Martin Kammler</author>
    <author>Michael Horn-von Hoegen</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4048</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>3</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>104</volume>
    <type>article</type>
    <publisherName>American Institute of Physics</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Comparing ultrafast surface and bulk heating using time-resolved electron diffraction</title>
    <abstract language="eng">From measurements of the transient Debye-Waller effect in Bismuth, we determine the buildup time of the random atomic motion resulting from the electronic relaxation after short pulse laser excitation. The surface sensitive reflection high energy electron diffraction and transmission electron diffraction yield a time constant of about 12 ps and 3 ps, respectively. The different energy transfer rates indicate relatively weak coupling between bulk and surface vibrational modes. (C) 2014 AIP Publishing LLC.</abstract>
    <parentTitle language="eng">Applied Physics Letters</parentTitle>
    <identifier type="doi">10.1063/1.4872055</identifier>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>C. Streubühr</author>
    <author>Annika Kalus</author>
    <author>Ping Zhou</author>
    <author>Manuel Ligges</author>
    <author>Anja Hanisch-Blicharski</author>
    <author>Martin Kammler</author>
    <author>U. Bovensiepen</author>
    <author>Michael Horn-von Hoegen</author>
    <author>D. von der Linde</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4058</id>
    <completedYear/>
    <publishedYear>2010</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>558</pageFirst>
    <pageLast>566</pageLast>
    <pageNumber/>
    <edition/>
    <issue>1</issue>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>AIP</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Coherent acoustic and optical phonons in laser-excited solids studied by ultrafast time-resolved X-ray diffraction</title>
    <abstract language="eng">We apply ultrafast time‐resolved X‐ray diffraction to directly study coherent acoustic and optical phonons in laser‐excited materials. In Au the ps acoustic response has been investigated with the particular goal to clarify the interplay of electronic and thermal pressure contributions. In Bi the extreme softening of the coherently excited A 1 g optical phonon presents strong indication that upon intense laser‐excitation the Peierls‐transition which determines the equilibrium structure of Bi can be reversed. In FeRh we studied the lattice response after a fast laser‐induced anti‐ferromagnetic to ferromagnetic phase transition.</abstract>
    <parentTitle language="eng">AIP Conference Proceedings</parentTitle>
    <identifier type="doi">10.1063/1.3507146</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Uladzimir Shymanovich</author>
    <author>Matthieu Nicoul</author>
    <author>Wei Lu</author>
    <author>A. Tarasevitch</author>
    <author>Martin Kammler</author>
    <author>Michael Horn-von Hoegen</author>
    <author>D. von der Linde</author>
    <author>Klaus Sokolowski-Tinten</author>
    <author>Claude Phipps</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4052</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>41</volume>
    <type>conferenceobject</type>
    <publisherName>EPJ</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Ultrafast time resolved reflection high energy electron diffraction with tilted pump pulse fronts</title>
    <abstract language="eng">We present time-resolved RHEED from a laser excited Pb(111) surface using a pulse front tilter for the compensation of the velocity mismatch of electrons and light. The laser pulses with tilted fronts were characterized by a spatially resolving cross correlator. The response of the surface upon excitation was observed to be less than 2 ps.</abstract>
    <parentTitle language="eng">EPJ Web of Conferences - XVIIIth International Conference on Ultrafast Phenomena</parentTitle>
    <identifier type="doi">10.1051/epjconf/20134110016</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <author>Ping Zhou</author>
    <author>C. Streubühr</author>
    <author>Annika Kalus</author>
    <author>Tim Frigge</author>
    <author>S. Wall</author>
    <author>Anja Hanisch-Blicharski</author>
    <author>Martin Kammler</author>
    <author>Manuel Ligges</author>
    <author>U. Bovensiepen</author>
    <author>D. von der Linde</author>
    <author>Michael Horn-von Hoegen</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="oaweg" number="">Gold Open Access- Erstveröffentlichung in einem/als Open-Access-Medium</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4059</id>
    <completedYear/>
    <publishedYear>2010</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>ME41</issue>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Optica Publishing Group</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Transient reversal of a Peierls-transition: Extreme phonon softening in laser-excited Bismuth</title>
    <abstract language="eng">Laser-excited coherent optical phonons in Bismuth were investigated using time-resolved X-ray diffraction. The observed extreme softening of the excited A1g-mode presents strong indication that the Peierls-distortion defining the equilibrium structure of Bismuth is transiently reversed.</abstract>
    <parentTitle language="eng">International Conference on Ultrafast Phenomena, Snowmass</parentTitle>
    <identifier type="doi">10.1364/UP.2010.ME41</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="OtherSeries">OSA Technical Digest (CD)</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Wei Lu</author>
    <author>Matthieu Nicoul</author>
    <author>Uladzimir Shymanovich</author>
    <author>A. Tarasevitch</author>
    <author>Martin Kammler</author>
    <author>Michael Horn-von Hoegen</author>
    <author>D. von der Linde</author>
    <author>Klaus Sokolowski-Tinten</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4072</id>
    <completedYear/>
    <publishedYear>2005</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>170</pageFirst>
    <pageLast>174</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>79</volume>
    <type>article</type>
    <publisherName>Springer</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Ultrafast X-ray diffraction</title>
    <abstract language="eng">In the last few years the generation of femtosecond pulses in the X-ray regime has become possible. These ultrashort X-ray pulses have enabled femtosecond time- resolution to be extended to X-rays.</abstract>
    <parentTitle language="deu">Ultrafast Phenomena XIV</parentTitle>
    <identifier type="doi">10.1007/3-540-27213-5_53</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="OtherSeries">Springer Series in Chemical Physics , 79</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Klaus Sokolowski-Tinten</author>
    <author>Christian Blome</author>
    <author>Juris Blums</author>
    <author>Uladzimir Shymanovich</author>
    <author>Matthieu Nicoul</author>
    <author>Andrea Cavalleri</author>
    <author>A. Tarasevitch</author>
    <author>Michael Horn-von Hoegen</author>
    <author>Martin Kammler</author>
    <author>D. von der Linde</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4065</id>
    <completedYear/>
    <publishedYear>2007</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>633</pageFirst>
    <pageLast>636</pageLast>
    <pageNumber/>
    <edition/>
    <issue>5812</issue>
    <volume>315</volume>
    <type>article</type>
    <publisherName>AAAS</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Ultrafast bond softening in bismuth: mapping a solid's interatomic potential with X-rays</title>
    <abstract language="eng">Intense femtosecond laser excitation can produce transient states of matter that would otherwise be inaccessible to laboratory investigation. At high excitation densities, the interatomic forces that bind solids and determine many of their properties can be substantially altered. Here, we present the detailed mapping of the carrier density-dependent interatomic potential of bismuth approaching a solid-solid phase transition. Our experiments combine stroboscopic techniques that use a high-brightness linear electron accelerator-based x-ray source with pulse-by-pulse timing reconstruction for femtosecond resolution, allowing quantitative characterization of the interatomic potential energy surface of the highly excited solid.</abstract>
    <parentTitle language="eng">Science</parentTitle>
    <identifier type="doi">10.1126/science.1135009</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>D. M. Fritz</author>
    <author>D. A. Reis</author>
    <author>B. Adams</author>
    <author>R. A. Akre</author>
    <author>J. Arthur</author>
    <author>Christian Blome</author>
    <author>P. H. Bucksbaum</author>
    <author>A. L. Cavalieri</author>
    <author>S. Engemann</author>
    <author>S. Fahy</author>
    <author>R. W. Falcone</author>
    <author>P. H. Fuoss</author>
    <author>K. J. Gaffney</author>
    <author>M. J. George</author>
    <author>J. Hajdu</author>
    <author>M. P. Hertlein</author>
    <author>P. B. Hillyard</author>
    <author>Michael Horn-von Hoegen</author>
    <author>Martin Kammler</author>
    <author>J. Kaspar</author>
    <author>R. Kienberger</author>
    <author>P. Krejcik</author>
    <author>S. H. Lee</author>
    <author>A. M. Lindenberg</author>
    <author>B. McFarland</author>
    <author>D. Meyer</author>
    <author>T. Montagne</author>
    <author>E. D. Murray</author>
    <author>A. J. Nelson</author>
    <author>Matthieu Nicoul</author>
    <author>R. Pahl</author>
    <author>J. Rudati</author>
    <author>H. Schlarb</author>
    <author>D. P. Siddons</author>
    <author>Klaus Sokolowski-Tinten</author>
    <author>Th Tschentscher</author>
    <author>D. von der Linde</author>
    <author>J. B. Hastings</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4105</id>
    <completedYear/>
    <publishedYear>2004</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>170</pageFirst>
    <pageLast>174</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>79</volume>
    <type>conferenceobject</type>
    <publisherName>Springer</publisherName>
    <publisherPlace>Berlin, Heidelberg</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Ultrafast X-ray diffraction</title>
    <abstract language="eng">In the last few years the generation of femtosecond pulses in the X-ray regime has become possible. These ultrashort X-ray pulses have enabled femtosecond time- resolution to be extended to X-rays.</abstract>
    <parentTitle language="eng">Ultrafast Phenomena XIV</parentTitle>
    <identifier type="isbn">978-3-540-27213-7</identifier>
    <identifier type="doi">10.1007/3-540-27213-5_53</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="OtherSeries">Springer Series in Chemical Physics ; 79</enrichment>
    <enrichment key="ConferenceStatement">Proceedings of the 14th International Conference, Niigata, Japan, July 25--30, 2004</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Klaus Sokolowski-Tinten</author>
    <author>Christian Blome</author>
    <author>Juris Blums</author>
    <author>Uladzimir Shymanovich</author>
    <author>Matthieu Nicoul</author>
    <author>Andrea Cavalleri</author>
    <author>A. Tarasevitch</author>
    <author>Michael Horn-von Hoegen</author>
    <author>Martin Kammler</author>
    <author>Dietrich von der Linde</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4100</id>
    <completedYear>2002</completedYear>
    <publishedYear/>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>preprint</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Dynamics of atomic steps on Si(001) studied by temporal LEED spectroscopy [Poster]</title>
    <abstract language="eng">While surface kinetics measurements for single atom diffusion have proliferated, little work exists attempting to measure surface dynamics under equilibrium conditions. We will present our recent work on developing Temporal LEED Spectroscopy (TLS) as a dynamic probe of surfaces capable of kinetics measurements at both high temperatures and surface coverages. By tuning the diffraction to specific structural entities such as steps, islands, etc., and monitoring the diffracted signal as a function of time, dynamics information about these structures can be obtained. As an example we will present TLS results for the dynamics of step fluctuations on Si(001) [1]. We have measured activation energies and identified step-edge diffusion as the rate limiting process for 950K &lt; T &lt; 1130K. Although this result is in apparent disagreement with earlier work, a careful analysis, considering crossover temperatures between different microscopic processes, can reconcile the differences. 1. M. Kammler, et al., Phys. Rev. B (in press).</abstract>
    <identifier type="url">https://www.researchgate.net/publication/252546721_Dynamics_of_atomic_steps_on_Si001_studied_by_temporal_LEED_spectroscopy_poster</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Michael C. Tringides</author>
    <author>E. H. Conrad</author>
    <author>Andreas Menzel</author>
    <author>Neil R. Voss</author>
    <author>Martin Kammler</author>
    <author>Michael Horn-von Hoegen</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4074</id>
    <completedYear/>
    <publishedYear>2004</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>3056</pageFirst>
    <pageLast>3058</pageLast>
    <pageNumber>3</pageNumber>
    <edition/>
    <issue>15</issue>
    <volume>85</volume>
    <type>article</type>
    <publisherName>American Institute of Physics</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Transition in growth mode by competing strain relaxation mechanisms</title>
    <abstract language="eng">Surfactant mediated epitaxy of Si(1−x)Gex alloys on Si(111) can, besides technological importance, clarify the influence of the lattice mismatch during surfactant mediated heteroepitaxial growth. For low Ge concentration we find an immediate layer-by-layer growth, whereas at high Ge concentration a roughening transition followed by relaxation of the lattice mismatch in a periodic dislocation network is preferred. This behavior can be explained by comparing the dislocation nucleation rate on a smooth surface with the island nucleation rate on a pseudomorphic film.</abstract>
    <parentTitle language="eng">Applied Physics Letters</parentTitle>
    <subTitle language="eng">surfactant mediated epitaxy of SiGe alloys on Si</subTitle>
    <identifier type="doi">10.1063/1.1803914</identifier>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Martin Kammler</author>
    <author>Michael Horn-von Hoegen</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4053</id>
    <completedYear/>
    <publishedYear>2012</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>18</issue>
    <volume>109</volume>
    <type>article</type>
    <publisherName>APS</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Atomistic picture of charge density wave formation at surfaces</title>
    <abstract language="eng">We used ultrafast electron diffraction and density-functional theory calculations to gain insight into the charge density wave (CDW) formation on In/Si(111). Weak excitation by a femtosecond-laser pulse results in the melting of the CDW. The immediate freezing is hindered by a barrier for the motion of atoms during the phase transition: The melted CDW constitutes a long-lived, supercooled phase and is strong evidence for a first-order transition. The freezing into the CDW is triggered by preexisting adsorbates. Starting at these condensation nuclei, the CDW expands one dimensionally on the In/Si(111) surface, with a constant velocity of more than 80 m/s.</abstract>
    <parentTitle language="eng">Physical review letters</parentTitle>
    <identifier type="doi">10.1103/PhysRevLett.109.186101</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Simone Wall</author>
    <author>Boris Krenzer</author>
    <author>Stefan Wippermann</author>
    <author>Simone Sanna</author>
    <author>Friedrich Klasing</author>
    <author>Anja Hanisch-Blicharski</author>
    <author>Martin Kammler</author>
    <author>Wolf Gero Schmidt</author>
    <author>Michael Horn-von Hoegen</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4055</id>
    <completedYear/>
    <publishedYear>2012</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>45</pageFirst>
    <pageLast>50</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName>Springer</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Nanoscale Heat Transport in Self-Organized Ge Clusters on Si(001)</title>
    <abstract language="eng">Ultrafast time resolved transmission electron diffraction (TED) in a reflection geometry was used to study the cooling behavior of self-organized, well defined nanoscale germanium hut and dome clusters on Si(001). The clusters were heated in a pump-probe scheme by fs-laser pulses. The resulting transient temperature rise was then determined from the drop in diffraction intensity caused by the Debye-Waller effect. From a cooling time of τ=177 ps we estimated a strongly reduced heat transfer compared with homogeneous films of equivalent thickness.</abstract>
    <parentTitle language="eng">MRS Online Proceedings Library</parentTitle>
    <identifier type="doi">10.1557/opl.2013.148</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Tim Frigge</author>
    <author>Annika Kalus</author>
    <author>Friedrich Klasing</author>
    <author>Martin Kammler</author>
    <author>Anja Hanisch-Blicharski</author>
    <author>Michael Horn-von Hoegen</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4064</id>
    <completedYear/>
    <publishedYear>2009</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName>Springer</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Ultra-fast Time-Resolved Electron Diffraction of Strongly Driven Phase Transitions on Silicon Surfaces</title>
    <abstract language="eng">The dynamics of strongly driven phase transitions at surfaces are studied by ultra-fast time-resolved reflection high energy electron diffraction. The surfaces are excited by an intense fs-laser pulse (pump) and probed by an ultra-short electron pulse with variable time delay. The order-disorder phase transition from a c(4 Ã— 2) to a(2 Ã— 1) of the bare Si(001) surface shows a transient decrease of the intensity of the c(4 Ã— 2) spots which recovers on a time scale of a few hundred picoseconds indicating the excitation of the phase transition. On Si(111) a monolayer of Indium induces a (4 Ã— 1) reconstruction which undergoes a Peierls like phase transition to a (8 Ã— "2") reconstruction below 100 K. Upon laser excitation with a fluence of 3.4 mJ/cm 2 at a temperature of 72 K the phase transition was strongly driven. The (8 Ã— "2")-diffraction spots instantaneously disappears, while the intensity of the (4 Ã— 1)-spots increases. This increase of the (4 Ã— 1) spot intensity excludes an explanation by the Debye-Waller-Effect and is evidence for a true structural phase transition at a surface. Â© 2010 Materials Research Society.</abstract>
    <parentTitle language="eng">MRS Online Proceedings Library</parentTitle>
    <identifier type="doi">10.1557/PROC-1230-MM03-09</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Simone Möllenbeck</author>
    <author>Anja Hanisch-Blicharski</author>
    <author>Paul Schneider</author>
    <author>Manuel Ligges</author>
    <author>Ping Zhou</author>
    <author>Martin Kammler</author>
    <author>Boris Krenzer</author>
    <author>Michael Horn-von Hoegen</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4063</id>
    <completedYear/>
    <publishedYear>2009</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>6</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName>Springer</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Transient Cooling of Ultrathin Epitaxial Bi(111)-Films on Si(111) Upon Femtosecond Laser Excitation Studied by Ultrafast Reflection High Energy Electron Diffraction</title>
    <abstract language="eng">With time resolved ultrafast electron diffraction the cooling process across the interface between a thin film and the underlying substrate was studied after excitation with short laser pulses. From the exponential decay of the surface temperature evolution a thermal boundary conductance of 1430 W/(cm2K) is determined for a 9.7 nm thin Bi(111) film on Si(111). A linear dependence between laser fluence and initial temperature rise was measured for film-thicknesses between 2.5 nm and 34.5 nm. The ratio of initial temperature rise and laser fluence for different film-thicknesses is compared to a model taking multilayer optics into account. The data agree well with this model.</abstract>
    <parentTitle language="eng">MRS Online Proceedings Library</parentTitle>
    <identifier type="doi">10.1557/PROC-1172-T04-08</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Anja Hanisch-Blicharski</author>
    <author>Boris Krenzer</author>
    <author>Simone Möllenbeck</author>
    <author>Manuel Ligges</author>
    <author>Ping Zhou</author>
    <author>Martin Kammler</author>
    <author>Michael Horn-von Hoegen</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4070</id>
    <completedYear/>
    <publishedYear>2005</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>570</pageFirst>
    <pageLast>576</pageLast>
    <pageNumber/>
    <edition/>
    <issue>4</issue>
    <volume>69</volume>
    <type>article</type>
    <publisherName>IOP</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Strain state analysis of hetero-epitaxial systems</title>
    <abstract language="eng">We present a new method to analyze the strain state of epitaxial hetero structures by high-resolution spot profile analysis low-energy electron diffraction. From the variation of the spot profiles with the vertical scattering vector we determine the hetero film roughness, the change of interlayer spacing due to tetragonal distortion, and the variation of the interlayer distance due to partial relaxation of the strained rough film. The practical implementation of this method is simple and can be used to determine the onset of strain-relieving defects during the growth process.</abstract>
    <parentTitle language="eng">Europhysics Letters</parentTitle>
    <identifier type="doi">10.1209/epl/i2004-10399-6</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>A. A. Al-Falou</author>
    <author>Martin Kammler</author>
    <author>Michael Horn-von Hoegen</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4069</id>
    <completedYear/>
    <publishedYear>2005</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>56</pageFirst>
    <pageLast>60</pageLast>
    <pageNumber/>
    <edition/>
    <issue>1-3</issue>
    <volume>576</volume>
    <type>article</type>
    <publisherName>Elsevier</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Low energy electron diffraction of epitaxial growth of bismuth on Si(111)</title>
    <abstract language="eng">The epitaxial growth of Bi on Si(1 1 1) studied by spot profile analyzing low energy electron diffraction shows for low coverage rotationally disordered Bi cluster with preferred orientations following the threefold symmetry of the Si substrate. With further deposition the Bi cluster coalesces and the surface orientation changes from the pseudo cubic Bi(1 1 0) surface orientation of the Bi cluster into the hexagonal Bi(1 1 1) surface of the resulting Bi film.</abstract>
    <parentTitle language="eng">Surface Science</parentTitle>
    <identifier type="doi">10.1016/j.susc.2004.11.033</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Martin Kammler</author>
    <author>Michael Horn-von Hoegen</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Bismuth</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Epitaxial growth</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>LEED</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>low energy electron diffraction</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Structural transition</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4086</id>
    <completedYear/>
    <publishedYear>2002</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>117</pageFirst>
    <pageLast>127</pageLast>
    <pageNumber/>
    <edition/>
    <issue>1-2</issue>
    <volume>512</volume>
    <type>article</type>
    <publisherName>Elsevier</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Kinetics of Au induced faceting of vicinal Si(111)</title>
    <abstract language="eng">Au induced faceting of vicinal Si(1 1 1) has been studied during adsorption at elevated temperature by spot profile analyzing of low energy electron diffraction and after quenching to room temperature by scanning tunneling microscopy. On the surfaces inclined towards five different types of facets form with increasing Au coverage at adsorption temperatures Tads below 800 °C. They are (4 4 3), (7 7 5), (5 5 3), a stepped (2 2 1), and the (3 3 1) facets. Atomic models for the (5 5 3) and (7 7 5) facet planes are proposed on the basis of high resolution STM images. At C we found the formation of an ordered step train which covers the entire surface. With further increasing Au coverage the stepped surface decomposes again into (1 1 1) terraces and step bunches. Driving force is the formation of the Si(1 1 1)-(5×2)–Au reconstruction.</abstract>
    <parentTitle language="eng">Surface Science</parentTitle>
    <identifier type="doi">10.1016/S0039-6028(02)01666-7</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>R. Hild</author>
    <author>C. Seifert</author>
    <author>Martin Kammler</author>
    <author>Frank-Joachim Meyer zu Heringdorf</author>
    <author>Michael Horn-von Hoegen</author>
    <author>R.A Zhachuk</author>
    <author>B.Z Olshanetsky</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Low energy electron diffraction (LEED)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Scanning tunneling microscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Gold</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Faceting</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Adsorption kinetics</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Step formation and bunching</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4096</id>
    <completedYear/>
    <publishedYear>1999</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>579</pageFirst>
    <pageLast>582</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>343-344</volume>
    <type>article</type>
    <publisherName>Elsevier</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Bi surfactant mediated epitaxy of Ge on Si(111)</title>
    <abstract language="eng">We have tested Bi for the surfactant mediated epitaxy of Ge on Si(111). Islanding of Ge is prevented and a 2D layer growth of smooth and continuous Ge films is observed. The lattice mismatch is accommodated by a periodic array of dislocations confined to the Si/Ge interface. The large covalent radius of Bi reduces the binding energy, allowing Very efficient segregation and low doping levels even at low growth temperatures. Unfortunately, this results also in a high Bi desorption flux limiting the possible growth temperatures below 600 degrees C. Consequently the Ge films show a high defect density in the order of 10(8) cm(-2) for stacking faults and 10(9) cm(-2) for dislocations which limit electron Hall mobility to values below 700 cm(2)/V s at room temperature.</abstract>
    <parentTitle language="eng">Thin Solid Films</parentTitle>
    <identifier type="doi">10.1016/S0040-6090(98)01659-9</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Michael Horn-von Hoegen</author>
    <author>Frank-Joachim Meyer zu Heringdorf</author>
    <author>Martin Kammler</author>
    <author>C. Schaeffer</author>
    <author>D. Reinking</author>
    <author>K. R. Hofmann</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Hall mobility</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Heteroepitaxial growth</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Surfactants</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Doping</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Molecular beam epitaxy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Germanium</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Bismuth</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Low energy electron diffraction</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Scanning electron microscopy</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4098</id>
    <completedYear/>
    <publishedYear>1999</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>503</pageFirst>
    <pageLast>504</pageLast>
    <pageNumber/>
    <edition/>
    <issue>6</issue>
    <volume>35</volume>
    <type>article</type>
    <publisherName>IET</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Fabrication of high-mobility Ge p-channel MOSFETs on Si substrates</title>
    <abstract language="eng">The first fabrication of Ge p-channel MOSFETs (p-MOSFETs) on Si substrates is reported. A CMOS compatible process based on relaxed Ge layers grown on Si(111) substrates by surfactant mediated epitaxy (SME) was used. The non-optimised low temperature process yielded normally-off Ge p-MOSFETs with record channel drift mobilities of 430 cm&lt;sup&gt;2&lt;/sup&gt;/Vs</abstract>
    <parentTitle language="eng">Electronics Letters</parentTitle>
    <identifier type="doi">10.1049/el:19990349</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>D. Reinking</author>
    <author>Martin Kammler</author>
    <author>N. Hoffmann</author>
    <author>Michael Horn-von Hoegen</author>
    <author>K. R. Hofmann</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>CMOS integrated circuits</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>germanium</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>carrier mobility</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>epitaxial growth</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>integrated circuit technology</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>elemental semiconductors</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>semiconductor growth</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>MOSFET</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Insulated gate field effect transistors</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Thin film growth and epitaxy</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4066</id>
    <completedYear/>
    <publishedYear>2006</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>6</issue>
    <volume>96</volume>
    <type>article</type>
    <publisherName>APS</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Less strain energy despite fewer misfit dislocations: the impact of ordering</title>
    <abstract language="eng">The average strain state of Ge films grown on Si(111) by surfactant mediated epitaxy has been compared to the ordering of the interfacial misfit dislocation network. Surprisingly, a smaller degree of average lattice relaxation was found in films grown at higher temperature. On the other hand, these films exhibit a better ordered dislocation network. This effect energetically compensates the higher strain at higher growth temperature, leading to the conclusion that, apart from the formation of misfit dislocations, their ordering represents an important channel for lattice-strain energy relaxation.</abstract>
    <parentTitle language="eng">Physical review letters</parentTitle>
    <identifier type="doi">10.1103/PhysRevLett.96.066101</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Thomas Schmidt</author>
    <author>Roland Kröger</author>
    <author>Jan Ingo Flege</author>
    <author>Michael Horn-von Hoegen</author>
    <author>T. Clausen</author>
    <author>J. Falta</author>
    <author>Andreas Janzen</author>
    <author>P. Zahl</author>
    <author>P. Kury</author>
    <author>Martin Kammler</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4051</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>2</pageFirst>
    <pageLast>8</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>127</volume>
    <type>article</type>
    <publisherName>Elsevier</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Ultra-fast electron diffraction at surfaces: from nanoscale heat transport to driven phase transitions</title>
    <abstract language="eng">Many fundamental processes of structural changes at surfaces occur on a pico- or femtosecond time scale. In order to study such ultra-fast processes, we have combined modern surface science techniques with fs-laser pulses in a pump-probe scheme. Reflection high energy electron diffraction (RHEED) with grazing incident electrons ensures surface sensitivity for the probing electron pulses. Utilizing the Debye-Waller effect, we studied the cooling of vibrational excitations in monolayer adsorbate systems or the nanoscale heat transport from an ultra-thin film through a hetero-interface on the lower ps-time scale. The relaxation dynamics of a driven phase transition far away from thermal equilibrium is demonstrated with the In-induced (8×2) reconstruction on Si(111). This surface exhibits a Peierls-like phase transition at 100K from a (8×2) ground state to (4×1) excited state. Upon excitation by a fs-laser pulse, this structural phase transition is driven into an excited (4×1) state at a sample temperature of 20K. Relaxation into the (8×2) ground state occurs after more than 150 ps.</abstract>
    <parentTitle language="eng">Ultramicroscopy</parentTitle>
    <identifier type="doi">10.1016/j.ultramic.2012.07.017</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Anja Hanisch-Blicharski</author>
    <author>Andreas Janzen</author>
    <author>Boris Krenzer</author>
    <author>S. Wall</author>
    <author>Friedrich Klasing</author>
    <author>Annika Kalus</author>
    <author>Tim Frigge</author>
    <author>Martin Kammler</author>
    <author>Michael Horn-von Hoegen</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4054</id>
    <completedYear/>
    <publishedYear>2012</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>6905</pageFirst>
    <pageLast>6908</pageLast>
    <pageNumber/>
    <edition/>
    <issue>23</issue>
    <volume>520</volume>
    <type>article</type>
    <publisherName>Elsevier</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">High-quality epitaxial Bi(111) films on Si(111) by isochronal annealing</title>
    <abstract language="eng">Bi(111) films grown on Si(111) at room temperature show a significantly higher roughness compared to Bi films grown on Si(100) utilizing a kinetic pathway based on a low-temperature process. Isochronal annealing steps of 3 min duration each with temperatures up to 200 °C cause a relaxation of the Bi films' lattice parameter toward the Bi bulk value and yield an atomically flat Bi surface. Driving force for the relaxation and surface reordering is the magic mismatch of 11 Bi atoms to 13 Si atoms that emerges at annealing temperatures above 150 °C and reduces the remaining strain to less than 0.2%.</abstract>
    <parentTitle language="eng">Thin Solid Films</parentTitle>
    <identifier type="doi">10.1016/j.tsf.2012.06.004</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Thomas Payer</author>
    <author>C. Klein</author>
    <author>M. Acet</author>
    <author>V. Ney</author>
    <author>Martin Kammler</author>
    <author>Frank-Joachim Meyer zu Heringdorf</author>
    <author>Michael Horn-von Hoegen</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Epitaxy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Strain</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Annealing</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Bismuth</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Silicon</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4062</id>
    <completedYear/>
    <publishedYear>2009</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>2</issue>
    <volume>80</volume>
    <type>article</type>
    <publisherName>APS</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Phonon confinement effects in ultrathin epitaxial bismuth films on silicon studied by time-resolved electron diffraction</title>
    <abstract language="eng">The transient temperature evolution of ultrathin bismuth films, epitaxially grown on a silicon single crystal, upon femtosecond laser excitation is studied by time-resolved electron diffraction. The exponential decay of the film temperature is explained by phonon reflection at the interface, which results in a strongly reduced thermal conduction in the cross plane of the layered system. The thermal boundary conductance is found to be as low as 1273 W/(K cm2). Model calculations, including phonon confinement effects, explain the linear relationship between the observed film-temperature decay constant and the film thickness. Even for 2.5 nm thin films the phonon transmission probability across the interface is given by bulk properties. Our simulations show that phonon confinement effects are negligible for bismuth-film thicknesses larger than 1 nm.</abstract>
    <parentTitle language="eng">Physical Review B</parentTitle>
    <identifier type="doi">10.1103/PhysRevB.80.024307</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Boris Krenzer</author>
    <author>Anja Hanisch-Blicharski</author>
    <author>Paul Schneider</author>
    <author>Thomas Payer</author>
    <author>Simone Möllenbeck</author>
    <author>O. Osmani</author>
    <author>Martin Kammler</author>
    <author>R. Meyer</author>
    <author>Michael Horn-von Hoegen</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4057</id>
    <completedYear/>
    <publishedYear>2011</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>3</issue>
    <volume>82</volume>
    <type>article</type>
    <publisherName>American Institute of Physics</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Lost in reciprocal space? Determination of the scattering condition in spot profile analysis low-energy electron diffraction</title>
    <abstract language="eng">The precise knowledge of the diffraction condition, i.e., the angle of incidence and electron energy, is crucial for the study of surface morphology through spot profile analysis low-energy electron diffraction (LEED). We demonstrate four different procedures to determine the diffraction condition: employing the distortion of the LEED pattern under large angles of incidence, the layer-by-layer growth oscillations during homoepitaxial growth, a G(S) analysis of a rough surface, and the intersection of facet rods with 3D Bragg conditions.</abstract>
    <parentTitle language="eng">Review of scientific instruments</parentTitle>
    <identifier type="doi">10.1063/1.3554305</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>C. Klein</author>
    <author>T. Nabbefeld</author>
    <author>H. Hattab</author>
    <author>D. Meyer</author>
    <author>G. Jnawali</author>
    <author>Martin Kammler</author>
    <author>Frank-Joachim Meyer zu Heringdorf</author>
    <author>A. Golla-Franz</author>
    <author>B. H. Müller</author>
    <author>Thomas Schmidt</author>
    <author>M. Henzler</author>
    <author>Michael Horn-von Hoegen</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4071</id>
    <completedYear/>
    <publishedYear>2005</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>11</issue>
    <volume>86</volume>
    <type>article</type>
    <publisherName>AIP</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Surfactant-mediated epitaxy of Ge on Si(111): Beyond the surface</title>
    <abstract language="eng">For a characterization of interface and “bulk” properties of Ge films grown on Si(111) by Sb surfactant-mediated epitaxy, grazing incidence x-ray diffraction and transmission electron microscopy have been used. The interface roughness, defect structure, and strain state have been investigated in dependence of film thickness and growth temperature. For all growth parameters, atomically smooth interfaces are observed. For thin Ge layers, about 75% of the strain induced by the lattice mismatch is relaxed by misfit dislocations at the Ge/Si interface. Only a slight increase of the degree of relaxation is found for thicker films. At growth temperatures below about 600 °C, the formation of twins is observed, which can be avoided at higher temperatures.</abstract>
    <parentTitle language="eng">Applied Physics Letters</parentTitle>
    <identifier type="doi">10.1063/1.1882760</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Thomas Schmidt</author>
    <author>Roland Kröger</author>
    <author>T. Clausen</author>
    <author>J. Falta</author>
    <author>Andreas Janzen</author>
    <author>Martin Kammler</author>
    <author>P. Kury</author>
    <author>P. Zahl</author>
    <author>Michael Horn-von Hoegen</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4049</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>14</issue>
    <volume>111</volume>
    <type>article</type>
    <publisherName>American Physical Society</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Abstract - A Reply to the Comment by H. Shim et al.</title>
    <parentTitle language="eng">Physical review letters</parentTitle>
    <identifier type="doi">10.1103/PhysRevLett.111.149602</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Tim Frigge</author>
    <author>S. Wall</author>
    <author>Boris Krenzer</author>
    <author>St. Wippermann</author>
    <author>Simone Sanna</author>
    <author>Friedrich Klasing</author>
    <author>Anja Hanisch-Blicharski</author>
    <author>Martin Kammler</author>
    <author>Wolf Gero Schmidt</author>
    <author>Michael Horn-von Hoegen</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
</export-example>
