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  <doc>
    <id>2981</id>
    <completedYear/>
    <publishedYear>2020</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>2</issue>
    <volume>38</volume>
    <type>article</type>
    <publisherName>AIP Publishing</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Vacuum-sealed field emission electron gun</title>
    <abstract language="eng">A compact vacuum-sealed field emission electron gun with an operation voltage below 5 kV is presented. With a 150 nm thick pyrolytic carbon membrane, a transmission of 40% at 5 kV is obtained. For more than 2500 h of continuous operation at an emission current of 100 nA, no significant increase (&lt;50V ) and almost no degradation were found. From this measurement, a lifetime of more than 10 000 h at continuous operation with approximately a linear increase of the extraction voltage from about 545 V to about 730 V is predicted. This electron source enables application of field emitter arrays in poor vacuum or even ambient pressure.&#13;
ACKNOWLEDGMENT&#13;
This work was supported by the German Federal Ministry for Economic Affairs and Energy under Project No. ZF4081502GM8. C.P., R.L., M.H., and R.S. were supported by Grant No. ZF4562901GM8.</abstract>
    <parentTitle language="eng">Journal of Vacuum Science &amp; Technology B</parentTitle>
    <identifier type="doi">10.1116/1.5139316</identifier>
    <enrichment key="opus.import.date">2022-02-18T18:44:39+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
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    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Michael Bachmann</author>
    <author>Felix Düsberg</author>
    <author>Christoph Langer</author>
    <author>Florian Herdl</author>
    <author>Lukas Bergbreiter</author>
    <author>Florian Dams</author>
    <author>Natuski Miyakawa</author>
    <author>Tobias Eggert</author>
    <author>Andreas Pahlke</author>
    <author>Simon Edler</author>
    <author>Christian Prommesberger</author>
    <author>Robert Damian Ławrowski</author>
    <author>Matthias Hausladen</author>
    <author>Rupert Schreiner</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlm">Schreiner, Rupert (Prof. Dr.), Zeitschriftenaufsätze - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>6453</id>
    <completedYear/>
    <publishedYear>2023</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>14</pageFirst>
    <pageLast>16</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Characterization and Operation of Graphene-Oxide-Semiconductor Emitters at Atmospheric Pressure Levels</title>
    <abstract language="eng">In recent years Graphene-Oxide-Semiconductor (GOS) electron emitters have attracted a lot of interest due to their outstanding durability in modest vacuum conditions. However, the performance at ambient pressure remains largely unexplored. In this study GOS-emitters are characterized in nitrogen and air at atmospheric pressure, and compared with their vacuum characteristics. For this purpose, lifetime and IV-characteristics measurements are shown. Furthermore, the GOS-emitter was operated as an ionization source for ion mobility spectrometry (IMS) at ambient conditions.</abstract>
    <parentTitle language="eng">2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA</parentTitle>
    <identifier type="isbn">979-8-3503-0143-4</identifier>
    <identifier type="doi">10.1109/IVNC57695.2023.10188974</identifier>
    <enrichment key="opus.import.date">2023-08-21T08:29:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">true</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Florian Herdl</author>
    <author>Maximillian J. Kueddelsmann</author>
    <author>Andreas Schels</author>
    <author>Michael Bachmann</author>
    <author>Simon Edler</author>
    <author>Dominik Wohlfartsstätter</author>
    <author>Felix Düsberg</author>
    <author>Alexander Prugger</author>
    <author>Michael Dillig</author>
    <author>Florian Dams</author>
    <author>Rupert Schreiner</author>
    <author>Cormac Ó. Coileáin</author>
    <author>Stefan Zimmermann</author>
    <author>Andreas Pahlke</author>
    <author>Georg S. Duesberg</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>durability</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>graphene compounds</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ion mobility</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>semiconductor-insulator boundaries</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>2599</id>
    <completedYear/>
    <publishedYear>2022</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>1</issue>
    <volume>40</volume>
    <type>article</type>
    <publisherName>AIP Publishing</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">In situ quantitative field emission imaging using a low-cost CMOS imaging sensor</title>
    <abstract language="eng">Spatially resolved field emission measurements represent an important factor in further development of existing field emitter concepts. In this work, we present a novel approach that allows quantitative analysis of individual emission spots from integral current-voltage measurements using a low-cost and commercially available CMOS camera. By combining different exposure times to extrapolate oversaturated and underexposed pixels, a near congruence of integral current and image brightness is shown. The extrapolation also allows parallel investigation of all individual tips participating in the total current with currents ranging from a few nanoampere to one microampere per tip. The sensitivity, which is determined by the integral brightness-to-current ratio, remains unchanged within the measurement accuracy even after ten full measurement cycles. Using a point detection algorithm, the proportional current load of each individual tip of the field emitter array is analyzed and compared at different times during the initial measurement cycle. Together with the extracted I-V curves of single emission spots from the integral measurement, the results indicate the effect of premature burnout of particularly sharp tips during conditioning of the emitter.</abstract>
    <parentTitle language="eng">Journal of Vacuum Science &amp; Technology B</parentTitle>
    <identifier type="doi">10.1116/6.0001551</identifier>
    <enrichment key="opus.import.date">2022-01-27T15:33:58+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Andreas Schels</author>
    <author>Simon Edler</author>
    <author>Florian Herdl</author>
    <author>Walter Hansch</author>
    <author>Michael Bachmann</author>
    <author>Daniela Ritter</author>
    <author>Markus Dudeck</author>
    <author>Felix Duesberg</author>
    <author>Manuel Meyer</author>
    <author>Andreas Pahlke</author>
    <author>Matthias Hausladen</author>
    <author>Philipp Buchner</author>
    <author>Rupert Schreiner</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ARRAYS</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ELECTRON-EMISSION</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>EMITTERS</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>FakANK</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlm">Schreiner, Rupert (Prof. Dr.), Zeitschriftenaufsätze - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>2550</id>
    <completedYear/>
    <publishedYear>2022</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>1</issue>
    <volume>40</volume>
    <type>article</type>
    <publisherName>AIP Publishing</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Origin of the current saturation level of p-doped silicon field emitters</title>
    <abstract language="eng">Using p-type semiconductors for field emitters is one simple way to realize an integrated current limiter to improve the lifetime of the cathode. In this work, the origin of the current saturation of p-type silicon emitters is investigated in detail. Single emitters are electrically characterized and compared to simulation results. With a simulation model considering a high surface generation rate and elevated tip temperature, a good agreement to the measured data is found. This observation is supported further by alteration of the surface experimentally. Electrical measurements after different treatments in hydrofluoric acid as well as heated and subsequent operation at room temperature are well explained by the influence of surface generation. Furthermore, it is shown that the field penetration leads to a small voltage drop and a strong geometry-dependent reduction of the field enhancement factor.</abstract>
    <parentTitle language="eng">Journal of Vacuum Science &amp; Technology B</parentTitle>
    <identifier type="doi">10.1116/6.0001554</identifier>
    <enrichment key="opus.import.date">2022-01-27T15:10:05+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Simon Edler</author>
    <author>Andreas Schels</author>
    <author>Florian Herdl</author>
    <author>Walter Hansch</author>
    <author>Michael Bachmann</author>
    <author>Markus Dudeck</author>
    <author>Felix Duesberg</author>
    <author>Andreas Pahlke</author>
    <author>Matthias Hausladen</author>
    <author> Buchner Philipp</author>
    <author>Rupert Schreiner</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>EMISSION</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>GROWTH</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>NATIVE-OXIDE</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlm">Schreiner, Rupert (Prof. Dr.), Zeitschriftenaufsätze - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>2660</id>
    <completedYear/>
    <publishedYear>2022</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>1</issue>
    <volume>40</volume>
    <type>article</type>
    <publisherName>AIP Publishing</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">High current silicon nanowire field emitter arrays</title>
    <abstract language="eng">Arrays of n-doped silicon nanowire field emitters with a high aspect ratio are realized by a novel dry etching technique. Compared to the high current silicon emitters in the literature, the manufacturing process is much simpler and requires only a single photolithography step and two dry etching steps. The cathodes realized with this method exhibit a total current of 20 mA from an active area of 4×4 mm2, which is significantly higher than that for most known structures made from silicon and also represents good performance in comparison with other emitter types, e.g., carbon nanotubes. In addition to characterization in ultrahigh vacuum, measurements at 10−5 mbar are performed and compared with our recent silicon emitters. Compared to these cathodes, the structures with the nanowires exhibit at least two orders of magnitude higher current-carrying capability.</abstract>
    <parentTitle language="eng">Journal of Vacuum Science &amp; Technology B</parentTitle>
    <identifier type="doi">10.1116/6.0001639</identifier>
    <enrichment key="opus.import.date">2022-01-28T13:58:12+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Michael Bachmann</author>
    <author>Felix Düsberg</author>
    <author>Andreas Pahlke</author>
    <author>Simon Edler</author>
    <author>Andreas Schels</author>
    <author>Florian Herdl</author>
    <author>Robert Damian Ławrowski</author>
    <author>Rupert Schreiner</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlm">Schreiner, Rupert (Prof. Dr.), Zeitschriftenaufsätze - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>2667</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>2</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">A novel current dependent field emission performance test</title>
    <abstract language="eng">A current dependent performance test for comparison of different field emitter arrays is introduced. Statistical analysis is enabled due to a short measurement time and as a main feature the electric field shift, comparable to the degradation of the emitter is examined. Significance of the test method is shown by a comparison of field emitter arrays with different doping levels.</abstract>
    <parentTitle language="eng">2021 34th International Vacuum Nanoelectronics Conference (IVNC): 5-9 July 2021, Lyon, France</parentTitle>
    <identifier type="doi">10.1109/IVNC52431.2021.9600695</identifier>
    <enrichment key="opus.import.date">2022-02-04T08:58:18+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Florian Herdl</author>
    <author>Michael Bachmann</author>
    <author>Dominik Wohlfartsstätter</author>
    <author>Felix Düsberg</author>
    <author>Markus Dudeck</author>
    <author>Magdalena Eder</author>
    <author>Manuel Meyer</author>
    <author>Andreas Pahlke</author>
    <author>Simon Edler</author>
    <author>Andreas Schels</author>
    <author>Walter Hansch</author>
    <author>Rupert Schreiner</author>
    <author>Dominik Wohlfartsstatter</author>
    <author>Felix Dusberg</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Current measurement</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Field emitter arrays</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Statistical analysis</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Systematics</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Time measurement</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Tools</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Vacuum systems</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>3402</id>
    <completedYear/>
    <publishedYear>2021</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>2</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace>Piscataway, NJ</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Current dependent performance test used on different types of silicon field emitter arrays</title>
    <abstract language="eng">A current dependent performance test is used to investigate the influence of doping and emitter geometry on the lifetime of silicon field emitter arrays. The measurements reveal an improved performance for lower n-type dopant concentrations. Furthermore, two new types of field emitters are introduced by slightly varying the original fabrication process [1]. The comparison shows superiority of tip like emitters over blade like structures.</abstract>
    <parentTitle language="eng">2021 34th International Vacuum Nanoelectronics Conference (IVNC): 5-9 July 2021, Lyon, France</parentTitle>
    <identifier type="isbn">978-1-6654-2589-6</identifier>
    <identifier type="doi">10.1109/IVNC52431.2021.9600787</identifier>
    <enrichment key="opus.import.date">2022-04-08T17:03:27+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Andreas Schels</author>
    <author>Simon Edler</author>
    <author>Walter Hansch</author>
    <author>Michael Bachmann</author>
    <author>Florian Herdl</author>
    <author>F. Dusberg</author>
    <author>Magdalena Eder</author>
    <author>Manuel Meyer</author>
    <author>M. Dudek</author>
    <author>Andreas Pahlke</author>
    <author>Rupert Schreiner</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>6706</id>
    <completedYear/>
    <publishedYear>2023</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>11</issue>
    <volume>14</volume>
    <type>article</type>
    <publisherName>MDPI</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Quantitative Field Emission Imaging for Studying the Doping-Dependent Emission Behavior of Silicon Field Emitter Arrays</title>
    <abstract language="eng">Field emitter arrays (FEAs) are a promising component for novel vacuum micro- and nanoelectronic devices, such as microwave power amplifiers or fast-switching X-ray sources. However, the interrelated mechanisms responsible for FEA degradation and failure are not fully understood. Therefore, we present a measurement method for quantitative observation of individual emission sites during integral operation using a low-cost, commercially available CMOS imaging sensor. The emission and degradation behavior of three differently doped FEAs is investigated in current-regulated operation. The measurements reveal that the limited current of the p-doped emitters leads to an activation of up to 55% of the individual tips in the array, while the activation of the n-type FEA stopped at around 30%. This enhanced activation results in a more continuous and uniform current distribution for the p-type FEA. An analysis of the individual emitter characteristics before and after a constant current measurement provides novel perspectives on degradation behavior. A burn-in process that trims the emitting tips to an integral current-specific ideal field enhancement factor is observed. In this process, blunt tips are sharpened while sharp tips are dulled, resulting in homogenization within the FEA. The methodology is described in detail, making it easily adaptable for other groups to apply in the further development of promising FEAs.</abstract>
    <parentTitle language="eng">Micromachines</parentTitle>
    <identifier type="doi">10.3390/mi14112008</identifier>
    <enrichment key="opus.import.date">2023-11-01T11:16:37+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">false</enrichment>
    <licence>Creative Commons - CC BY - Namensnennung 4.0 International</licence>
    <author>Andreas Schels</author>
    <author>Florian Herdl</author>
    <author>Matthias Hausladen</author>
    <author>Dominik Wohlfartsstätter</author>
    <author>Simon Edler</author>
    <author>Michael Bachmann</author>
    <author>Andreas Pahlke</author>
    <author>Rupert Schreiner</author>
    <author>Walter Hansch</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="oaweg" number="">Gold Open Access- Erstveröffentlichung in einem/als Open-Access-Medium</collection>
    <collection role="persons" number="schreinerlm">Schreiner, Rupert (Prof. Dr.), Zeitschriftenaufsätze - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>6452</id>
    <completedYear/>
    <publishedYear>2023</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>224</pageFirst>
    <pageLast>226</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
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    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
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    <title language="eng">Beta Factor Mapping of Individual Emitting Tips During Integral Operation of Field Emission Arrays</title>
    <abstract language="eng">Emission uniformity mappings of field emitter arrays provide important insight into degradation mechanisms, but are often laborious, non-integral, costly, or not quantifiable. Here, a low-cost Raspberry Pi HQ camera is used as an extraction anode to quantify the emission distribution in field emitter arrays. A verification measurement using controlled SEM electron beams proves, that current-voltage characteristics of individual emission sites can be determined by combining the integral electrical data with the image data. The characteristics are used to quantify the field enhancement factors of an 30x30 silicon field emitter array during integral operation. Comparison of the field enhancement factor distributions before and after a one-hour constant current operation at 1 µA shows an increase from 50 actively emitting tips before to 156 after the measurement. It is shown, that the distribution of field enhancement factors shifts towards lower values, due to the increasing degradation for high field enhancement tips, especially above 1500.</abstract>
    <parentTitle language="eng">2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA</parentTitle>
    <identifier type="isbn">979-8-3503-0143-4</identifier>
    <identifier type="doi">10.1109/IVNC57695.2023.10188957</identifier>
    <enrichment key="opus.import.date">2023-08-21T08:29:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
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    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
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    <enrichment key="opus.urn.autoCreate">true</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Andreas Schels</author>
    <author>Florian Herdl</author>
    <author>Matthias Hausladen</author>
    <author>Dominik Wohlfartsstätter</author>
    <author>Michael Bachmann</author>
    <author>Simon Edler</author>
    <author>Felix Düsberg</author>
    <author>Andreas Pahlke</author>
    <author>Philipp Buchner</author>
    <author>Rupert Schreiner</author>
    <author>Walter Hansch</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emission</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emission imaging</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emission distribution</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field enhancement factor</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>CMOS imaging</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>beta factor</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>6450</id>
    <completedYear/>
    <publishedYear>2023</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>6</pageFirst>
    <pageLast>8</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
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    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
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    <title language="eng">An Integrated Silicon Nanowire Field Emission Electron Source on a Chip with High Electron Transmission</title>
    <abstract language="eng">Silicon nanowire field emission arrays (50 × 50 pillars) were fabricated on a silicon glass hybrid wafer. The glass acts both as the support for the whole structure and insulator between cathode and extraction grid. The extraction grid matches the emitter structures and is optically aligned and adhered to the emitter chip by a vacuum compatible epoxide adhesive. These chips exhibit an emission current of about 600 μA at an extraction voltage of 300 V. The electron transmission through the grid is above 80 %. 58-hour longtime measurements were conducted showing low degradation of the emission current and high stability of electron transmission.</abstract>
    <parentTitle language="eng">2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA</parentTitle>
    <identifier type="isbn">979-8-3503-0143-4</identifier>
    <identifier type="doi">10.1109/IVNC57695.2023.10188878</identifier>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">true</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Philipp Buchner</author>
    <author>Matthias Hausladen</author>
    <author>Andreas Schels</author>
    <author>Florian Herdl</author>
    <author>Simon Edler</author>
    <author>Michael Bachmann</author>
    <author>Rupert Schreiner</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Semiconductor device measurement</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Stimulated emission</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Optical device fabrication</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Glass</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Power system stability</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Insulators</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Electron optics</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>6113</id>
    <completedYear/>
    <publishedYear>2023</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>32</pageFirst>
    <pageLast>37</pageLast>
    <pageNumber/>
    <edition/>
    <issue>3</issue>
    <volume>35</volume>
    <type>article</type>
    <publisherName>Wiley</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">The “LED‐version” of the electron gun: An electron source for operation in ambient pressure environments based on silicon field emitter arrays</title>
    <abstract language="eng">We report on our progress to develop and optimize electron sources for practical applications. A simple fabrication process is introduced based on a wafer dicing saw and a wet chemical etch step without the need for a clean room. Due to the formation of crystal facets the samples show a homogeneous geometry throughout the array. Characterization techniques are developed to systematically compare various arrays. A very defined measurement procedure based on current controlled IV-sweeps as well as lifetime measurements at various currents is proposed. To investigate the current distribution in the array a commercial CMOS detector is used and shows the potential for in depth analysis of the arrays. Finally, a compact hermetically sealed housing is presented enabling electron generation in atmospheric pressure environments.</abstract>
    <parentTitle language="deu">Vakuum in Forschung und Praxis</parentTitle>
    <identifier type="doi">10.1002/vipr.202300801</identifier>
    <enrichment key="opus.import.data">@articlearticle, author = Bachmann, Michael and Düsberg, Felix and Pahlke, Andreas and Edler, Simon and Schels, Andreas and Herdl, Florian and Hausladen, M. and Buchner, Philipp and Schreiner, Rupert, year = 2023, month = 06, pages = 32-37, title = The “LED‐version” of the electron gun: An electron source for operation in ambient pressure environments based on silicon field emitter arrays, volume = 35, journal = Vakuum in Forschung und Praxis, doi = 10.1002/vipr.202300801</enrichment>
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    <author>Michael Bachmann</author>
    <author>Felix Düsberg</author>
    <author>Andreas Pahlke</author>
    <author>Simon Edler</author>
    <author>Andreas Schels</author>
    <author>Florian Herdl</author>
    <author>Matthias Hausladen</author>
    <author>Philipp Buchner</author>
    <author>Rupert Schreiner</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlm">Schreiner, Rupert (Prof. Dr.), Zeitschriftenaufsätze - Labor für Mikrosensorik</collection>
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    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
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