<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>3772</id>
    <completedYear/>
    <publishedYear>2015</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>104</pageFirst>
    <pageLast>105</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Enhanced field emission from p-doped black silicon on pillar structures</title>
    <abstract language="eng">Aligned square arrays of black silicon (b-Si) on top of pillars were fabricated on p-type silicon substrate by a deep-etching step combined with a b-Si process. Two 10×10 arrays with pillar heights of 8 μm and 20 μm and one b-Si reference sample without pillars were investigated. Integral field emission (FE) measurements of the arrays yielded rather low onset-fields between 6.4 V/μm and 13.5 V/μm and field enhancement factors between 430 and 800. The I-V curves showed typical Fowler-Nordheim behavior for low fields, whereas a saturation region was observed at higher fields. The maximum integral current in the saturation region was 8 μA at a field of 20 V/μm. The stability of the emission current was investigated over 3 hours and revealed moderate fluctuations of ± 8% in the saturation region. Voltage scans showed well-aligned FE from nearly all pillars.</abstract>
    <parentTitle language="eng">2015 28th International Vacuum Nanoelectronics Conference (IVNC), 13-17 July 2015, Guangzhou, China</parentTitle>
    <identifier type="doi">10.1109/IVNC.2015.7225547</identifier>
    <enrichment key="opus.import.date">2022-04-28T19:28:04+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Christoph Langer</author>
    <author>Christian Prommesberger</author>
    <author>Robert Damian Ławrowski</author>
    <author>F. Müller</author>
    <author>Rupert Schreiner</author>
    <author>Pavel Serbun</author>
    <author>Günter Müller</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>black silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>CATHODES</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Current measurement</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Etching</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>FABRICATION</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emission</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emitter array</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Iron</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Vacuum technology</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>5298</id>
    <completedYear/>
    <publishedYear>2012</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>2832</pageFirst>
    <pageLast>2837</pageLast>
    <pageNumber/>
    <edition/>
    <issue>10</issue>
    <volume>59</volume>
    <type>article</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Homogeneous Field Emission Cathodes With Precisely Adjustable Geometry Fabricated by Silicon Technology</title>
    <abstract language="eng">Silicon-based cathodes with precisely aligned field emitter arrays of sharp tips applicable for miniaturized electron sources were successfully fabricated and characterized. This was made possible by an improved fabrication process using wet thermal oxidation, wet etching, and reactive-ion etching steps with adjustable anisotropy. As substrate materials, both p-doped silicon and n-doped silicon were used. The cathode chips contain about 3 × 10 5 Si tips/cm 2 in a triangular array with tip heights of 2.5 μm, tip radii of less than 30 nm, and spacing of 20 μm. Well-aligned field emission (FE) and excellent homogeneity from all tips (i.e., 100% efficiency) and maximum stable currents of typically 0.1 μA (0.6 μA) for p (n)-type Si were reproducibly achieved. The current-voltage characteristics of the p-Si tips exhibit the expected saturation at around 10 nA with around ten times better current stability, whereas the n-Si tips show the usual Fowler-Nordheim behavior. Additional coating of the Si tips with 5-nm Cr and 10-nm Au layers resulted in improved stability and at least five times higher average FE current limits (about 3 μA) at about 30% higher operation voltage.</abstract>
    <parentTitle language="eng">IEEE Transactions on Electron Devices</parentTitle>
    <identifier type="doi">10.1109/TED.2012.2206598</identifier>
    <identifier type="issn">0018-9383</identifier>
    <identifier type="issn">1557-9646</identifier>
    <enrichment key="opus.import.date">2022-08-24T10:21:08+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">true</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Florian Dams</author>
    <author>Aliaksandr Navitski</author>
    <author>Christian Prommesberger</author>
    <author>Pavel Serbun</author>
    <author>Christoph Langer</author>
    <author>Günter Müller</author>
    <author>Rupert Schreiner</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>cathodes</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>electron field emission</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>elemental semiconductors</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Field emission (FE) cathodes</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emitter array (FEA)</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>miniaturized electron sources</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>oxidation</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon tips</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>sputter etching</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlm">Schreiner, Rupert (Prof. Dr.), Zeitschriftenaufsätze - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>1038</id>
    <completedYear/>
    <publishedYear>2016</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>2</issue>
    <volume>34</volume>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Field emission properties of p-type black silicon on pillar structures</title>
    <abstract language="eng">Arrays of black silicon field emission pillar structures were fabricated on p-type silicon substrates. Two types of samples with the same number of pillars (arrays of 10 × 10) but different pillar heights (8 and 20 μm) were prepared as well as a black silicon reference sample without pillars. The field emission properties of these cathodes were investigated both by means of integral current-voltage measurements and by field emission scanning microscopy. Samples with a pillar height of 20 μm revealed onset fields as low as 6.4 V/μm, field enhancement factors up to 800, and emission currents up to 8 μA at an applied field of 20 V/μm. Due to the p-type material, a saturation of the emission current for fields above 11 V/μm was observed. This saturation leads to a stable operation with a current fluctuation of less than ±8%. It was found that samples with a pillar height of 20 μm showed improved emission characteristics compared to samples with a pillar height of 8 μm or without pillars. The voltage maps revealed an increased emission homogeneity after a “burn-in” sequence of the sample. The current map showed that a few of the pillars dominate the emission. Integral current stability measurements were performed under different vacuum pressures, in order to investigate altered emission behavior and a potential degradation of the emitters. At pressures above 10−6 mbar, the sample starts to degrade irreversibly. Nevertheless, even after a harsh treatment over 30 min at 5 × 10−5 mbar and at an applied field of 23 V/μm, the cathode was still operating, and did not fail during further operation over 20 h at 5 × 10−8 mbar and at an applied field of 28 V/μm.</abstract>
    <parentTitle language="eng">Journal of Vacuum Science &amp; Technology B</parentTitle>
    <identifier type="doi">10.1116/1.4943919</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <author>Christoph Langer</author>
    <author>Christian Prommesberger</author>
    <author>Robert Damian Ławrowski</author>
    <author>Rupert Schreiner</author>
    <author>Pavel Serbun</author>
    <author>Günter Müller</author>
    <author>Felix Düsberg</author>
    <author>Martin Hofmann</author>
    <author>Michael Bachmann</author>
    <author>Andreas Pahlke</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlm">Schreiner, Rupert (Prof. Dr.), Zeitschriftenaufsätze - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>1035</id>
    <completedYear/>
    <publishedYear>2017</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>2</issue>
    <volume>35</volume>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-03</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Extraction of the characteristics of current-limiting elements from field emission measurement data</title>
    <abstract language="eng">In this contribution, the authors will present an algorithm to extract the characteristics of nonideal field emission circuit elements from saturation-limited field emission measurement data. The method for calculating the voltage drop on current-limiting circuit elements is based on circuit theory as well as Newton's method. Since the only assumption the authors make on the current-limiting circuit is a connection in series, this method is applicable to most field emission data showing saturation. To be able to determine the significance of any parameter output, the uncertainties of data and extracted parameters as well as the parameter correlations are fully taken into account throughout the algorithm. N-type silicon samples with varying external serial resistors are analyzed. All results show a good agreement to the nominal resistor values. Additionally, several p-type samples are analyzed, showing a diodelike behavior. The extracted current-limiting characteristics of the p-type samples are in good agreement with a pn-junction model. The stability of the emission current of the p-type samples is measured by constant voltage measurements and compared to the extracted current-limiting characteristics. The application of the algorithm to measurement data shows that the given algorithm is a valuable tool to analyze field emission measurement data influenced by nonemissive processes.</abstract>
    <parentTitle language="eng">Journal of Vacuum Science &amp; Technology B</parentTitle>
    <identifier type="doi">10.1116/1.4971768</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Michael Bachmann</author>
    <author>Florian Dams</author>
    <author>Felix Düsberg</author>
    <author>Martin Hofmann</author>
    <author>Andreas Pahlke</author>
    <author>Christoph Langer</author>
    <author>Robert Damian Ławrowski</author>
    <author>Christian Prommesberger</author>
    <author>Rupert Schreiner</author>
    <author>Pavel Serbun</author>
    <author>Dirk Lützenkirchen-Hecht</author>
    <author>Günter Müller</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlm">Schreiner, Rupert (Prof. Dr.), Zeitschriftenaufsätze - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>3699</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>222</pageFirst>
    <pageLast>223</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">High aspect ratio silicon tip cathodes for application in field emission electron sources</title>
    <abstract language="eng">Precisely aligned arrays of sharp tip structures on top of elongated pillars were realized by using an improved fabrication process including an additional inductively-coupled-plasma reactive-ion etching step. Arrays of n-type and p-type silicon with 271 tips have been fabricated and investigated. Those structures have a total height of 5–6 µm and apex radii less than 20nm. Integral field emission measurements of the arrays yielded low onset-fields in the range of 8–12V=µm and field enhancement factors between 300 and 700. The I-E curves of n-type structures showed the usual Fowler-Nordheim behaviour, whereas p-type structures revealed a significant saturation region due to the limited number of electrons in the conduction band and a further carrier depletion effect caused by the pillar. The maximum integral current in the saturation region was 150 nA at fields above 30V=µm. An excellent stability of the emission current of less than ± 2% fluctuation was observed in the saturation region. For n-type Si a maximum integral current of 10 µA at 24V=µm and an average current stability with a fluctuation of ± 50% were measured.</abstract>
    <parentTitle language="eng">2014 27th International Vacuum Nanoelectronics Conference (IVNC), 6-10 July 2014, Engelberg, Switzerland</parentTitle>
    <identifier type="doi">10.1109/IVNC.2014.6894824</identifier>
    <enrichment key="opus.import.date">2022-04-28T18:45:44+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Christoph Langer</author>
    <author>Robert Damian Ławrowski</author>
    <author>Christian Prommesberger</author>
    <author>Florian Dams</author>
    <author>Pavel Serbun</author>
    <author>Michael Bachmann</author>
    <author>Günter Müller</author>
    <author>Rupert Schreiner</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Current measurement</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Etching</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>FABRICATION</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emission</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emitter array</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>GEOMETRY</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Iron</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Sensor arrays</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon tip</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>4682</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst>28</pageFirst>
    <pageLast>35</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Cluster Mikrosystemtechnik</publisherName>
    <publisherPlace>Landshut</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Spitzen- und Kantenemitter aus Silizium mit einem hohen Aspektverhältnis für Ionisationsgassensoren</title>
    <abstract language="deu">Durch die Optimierung von reaktivem Ionenätzen mit induktiv gekoppeltem Plasma ist die Herstellung von verschiedenen Siliziumkathoden mit hoher Anisotropie und hohem Aspektverhältnis für Feldemissionsanwendungen möglich. Simulationen mit COMSOL Multiphysics untermauern das Potential von solchen Spitzen- und Kantenfeldemittern. Die Ergebnisse der Simulation zeigen einen zwei- bis sechsfach höheren Feldüberhöhungsfaktor der tiefgeätzten Strukturen im Vergleich zu identischen Emittern ohne zusätzliche Tiefenätzung. Feldemissionsmessungen bestätigen die Simulationsergebnisse. Der modifizierte Herstellungsprozess der Feldemitter ermöglicht somit einen zuverlässigen Betrieb von Feldemissionselektronenquellen bei kleineren makroskopischen Feldstärken. Außerdem weisen die Messungen des Emissionsstroms im Sättigungsbereich eine weitgehende Unabhängigkeit vom elektrischen Feld auf. Lokale Feldemissionsmessungen ergeben dadurch eine deutliche Stromstabilisierung, welche über große Feldstärkenbereiche konstant bleibt. Die Nutzung der HAR-Emitter (high aspect ratio) ist damit eine gute Voraussetzung für einen zuverlässigen Betrieb der Emissionskathoden bei kleinen Feldstärken für die Anwendung in Ionisationsgassensoren.</abstract>
    <parentTitle language="deu">Mikrosystemtechnik als Schlüsseltechnologie der Systemintegration : 4. Landshuter Symposium Mikrosystemtechnik ; Tagungsband zum Symposium ; 12./13. März 2014, Hochschule Landshut</parentTitle>
    <identifier type="isbn">978-3-9812696-5-9</identifier>
    <enrichment key="opus.import.date">2022-07-03T14:30:54+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="OtherSeries">Tagungsbände / Landshuter Symposium Mikrosystemtechnik ; 4</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Robert Damian Ławrowski</author>
    <author>Christoph Langer</author>
    <author>Christian Prommesberger</author>
    <author>Florian Dams</author>
    <author>Pavel Serbun</author>
    <author>Günter Müller</author>
    <author>Rupert Schreiner</author>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Emitter</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Feldelektronenemission</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Gassensor</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Herstellung</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Ionenemission</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Silicium</value>
    </subject>
    <collection role="ddc" number="621">Angewandte Physik</collection>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>5396</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>339</pageFirst>
    <pageLast>343</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Curran</publisherName>
    <publisherPlace>Red Hook, NY</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Electric Field Dependence of Photoemission from n- and p-type Si Crystals</title>
    <abstract language="eng">The performance of free electron lasers depends on the brilliance of the electron source. Nowadays photo-cathodes (e.g. Cs2Te) are used despite of their high emittance. To develop robust and more brilliant cathodes we have built up an UHV system which enables systematic photoemission (PE) measurements with a tunable pulsed laser (hv) at high electric fields (E). First results on Au and Ag crystals revealed only low quantum efficiency (QE) due to fast electron relaxation. Hence, we have started QE(hv,E) investigations on n- and p-Si wafers. Resonant PE was observed above as well as below the work function O, which can be assigned to optical transitions in the electronic band structure or explained by thermally excited states at the bottom of the conduction band. As expected, only low QE values were achieved even for n-Si probably due to surface oxide. Moreover, a significant rise of the QE peaks above O were obtained for n-Si at E &gt;8 MV/m but limited by the occurrence of parasitic field emission from dust particles.</abstract>
    <parentTitle language="eng">Proceedings, 35th International Free Electron Laser Conference (FEL 2013) : New York, NY, USA, August 26-19, 2013</parentTitle>
    <identifier type="isbn">9783954501267</identifier>
    <identifier type="url">https://accelconf.web.cern.ch/FEL2013/papers/tupso49.pdf#search=%20domain%3Daccelconf%2Eweb%2Ecern%2Ech%20%20%2Bauthor%3A%22schreiner%22%20%20url%3Aaccelconf%2FFEL2013%20FileExtension%3Dpdf%20%2Durl%3Aabstract%20%2Durl%3Aaccelconf%2Fjacow</identifier>
    <enrichment key="opus.import.date">2022-08-24T10:21:08+00:00</enrichment>
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    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Stephan Mingels</author>
    <author>Benjamin Bornmann</author>
    <author>Dirk Lützenkirchen-Hecht</author>
    <author>Günter Müller</author>
    <author>Christoph Langer</author>
    <author>Christian Prommesberger</author>
    <author>Rupert Schreiner</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>5401</id>
    <completedYear/>
    <publishedYear>2012</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>2</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace>Piscataway, NJ.</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Highly uniform and stable electron field emission from B-doped Si-tip arrays for applications in integrated vacuum microelectronic devices</title>
    <abstract language="eng">In order to improve the uniformity and field emission stability of p-type silicon tip arrays for pulsed sensor applications, we have systematically studied the influence of the fabrication parameters on the tip shape and the specific operating conditions. Based on detailed design calculations of the field enhancement, we have fabricated a series of hexagonal arrays of B-doped Si-tips in a triangular arrangement, each containing a different number of tips (91, 575 and 1300) of 1 μm height, 20 nm apex radius, and 20 μm pitch. The field emission properties of both individual tips and complete arrays were investigated with by field emission scanning microscopy. The current plateaus of these tips typically occur at about 10 nA and 60 V/μm field level. In this carrier depletion range, single tips provide the highest current stability (&lt;; 4%) and optical current switching ratios of ~2.5. Rather homogeneous emission of the tip arrays leads to an almost linear scaling of the saturation current (2 nA/tip) and to a much improved current stability (&lt;; 1%) measured over 1 hour.</abstract>
    <parentTitle language="eng">25th International Vacuum Nanoelectronics Conference (IVNC) - Jeju, Korea (South), 09.07. - 13.07.2012</parentTitle>
    <identifier type="isbn">978-1-4673-1984-3</identifier>
    <identifier type="doi">10.1109/IVNC.2012.6316857</identifier>
    <identifier type="isbn">978-1-4673-1983-6</identifier>
    <identifier type="isbn">978-1-4673-1982-9</identifier>
    <identifier type="issn">2380-6311</identifier>
    <identifier type="issn">2164-2370</identifier>
    <enrichment key="opus.import.date">2022-08-24T10:21:08+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Rupert Schreiner</author>
    <author>Christian Prommesberger</author>
    <author>Christoph Langer</author>
    <author>Florian Dams</author>
    <author>Pavel Serbun</author>
    <author>Benjamin Bornmann</author>
    <author>Aliaksandr Navitski</author>
    <author>Günter Müller</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>boron</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>circuit stability</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>elemental semiconductors</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emission ion microscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emitter arrays</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>integrated optoelectronics</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>microfabrication</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>microsensors</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>optical switches</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon tips</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>5371</id>
    <completedYear/>
    <publishedYear>2012</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>2</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Photosensitivity of electron field emission from B-doped Si-tip arrays</title>
    <abstract language="eng">The electron current from field-emitting B-doped Si-tip arrays under illumination was studied. An improved cathode design with a patch of 271 tips yielded a reproducible cathode current between 0.2-2000 nA in the electric field range of 3.8-6.6 V/μm. The plateau in the Fowler-Nordheim plot shows the actual carrier depletion and leads to a very stable emission at ~1 μA with a current noise of less than 3.3 %. Color-filtered halogen lamp illumination was used to investigate the photo-sensitivity of the saturation current. The intensity-normalized current switching ratio increases nonlinearly with the photon energy. This hints either for secondary generation in the conduction band or deeper valence band excitation. The first is supported by a rough estimation of the quantum efficiency. Further experiments with a tunable laser and electron spectroscopy are planned.</abstract>
    <parentTitle language="eng">25th International Vacuum Nanoelectronics Conference (IVNC) ; Jeju, Korea (South), 09.07.2012 - 13.07.2012</parentTitle>
    <identifier type="isbn">978-1-4673-1984-3</identifier>
    <identifier type="doi">10.1109/IVNC.2012.6316980</identifier>
    <identifier type="isbn">978-1-4673-1983-6</identifier>
    <identifier type="isbn">978-1-4673-1982-9</identifier>
    <identifier type="issn">2380-6311</identifier>
    <identifier type="issn">2164-2370</identifier>
    <enrichment key="opus.import.date">2022-08-24T10:21:08+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">true</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Benjamin Bornmann</author>
    <author>Stephan Mingels</author>
    <author>Pavel Serbun</author>
    <author>Dirk Lützenkirchen-Hecht</author>
    <author>Günter Müller</author>
    <author>Christian Prommesberger</author>
    <author>Christoph Langer</author>
    <author>Florian Dams</author>
    <author>Rupert Schreiner</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>boron</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>electron field emission</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>electron spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>elemental semiconductors</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emitter arrays</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>halogens</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>lamps</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>lighting</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>p-doped Si tips</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>photosensitivity</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>valence bands</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>5321</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Deutsche Physikalische Gesellschaft e.V.</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Si-Feldemissionskathoden für Anwendungen in miniaturisierten Ionisationsvakuumsensoren</title>
    <abstract language="deu">Feldemissionselektronenquellen sind aufgrund ihrer prinzipiellen Vorteile gegenüber Glühkathoden bereits seit längerer Zeit Gegenstand der Forschung und werden bisher nur in einigen Spezialanwendungen erfolgreich eingesetzt. Hierbei werden Einzelspitzen mit Spannungen im kV-Bereich und Strömen im nA-Bereich betrieben. Dagegen werden für miniaturisierte Sensorsysteme eher Spannungen von ca. 100 V und Ströme von ca. 1 mA benötigt. Dazu wurden bisher meist Feldemissionskathoden mit CNTs vorgeschlagen, welche für Anwendungen in der Halbleiterindustrie aufgrund des Kohlenstoffanteils nicht erwünscht sind. Ziel unserer Arbeit ist es, Si-basierte Elektronenquellen zu realisieren, die mit anderen miniaturisierten Vakuumsensoren auf einem Chip integrierbar sind. Mithilfe eines optimierten Herstellungsprozesses konnten wir p-Si-Spitzenarrays mit Spitzenradien von wenigen nm realisieren [1]. Messungen an diesen Strukturen zeigen ein sehr homogenes Emissionsverhalten, das vor allem im Sättigungsbereich bei Emissionsströmen von ca. 10 nA pro Spitze zeitlich stabil (Schwankungen &lt; 5 %) und optisch schaltbar (Faktor &gt; 2.5) ist [2].</abstract>
    <parentTitle language="deu">Verhandlungen der Deutschen Physikalischen Gesellschaft e.V. (DPG), Regensburg, 10. - 15. März 2013</parentTitle>
    <identifier type="url">https://www.researchgate.net/publication/281373011_Si-Feldemissionskathoden_fur_Anwendungen_in_miniaturisierten_Ionisationsvakuumsensoren</identifier>
    <enrichment key="opus.import.date">2022-08-24T10:21:08+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Christoph Langer</author>
    <author>Christian Prommesberger</author>
    <author>Florian Dams</author>
    <author>Pavel Serbun</author>
    <author>Benjamin Bornmann</author>
    <author>Stephan Mingels</author>
    <author>Günter Müller</author>
    <author>Rupert Schreiner</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>5297</id>
    <completedYear/>
    <publishedYear>2012</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>1</issue>
    <volume>83</volume>
    <type>article</type>
    <publisherName>American Institute of Physics</publisherName>
    <publisherPlace>Melville, NY</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Electron spectrometer in adjustable triode configuration for photo-induced field emission measurements</title>
    <abstract language="eng">We have constructed a new ultrahigh vacuum apparatus with a triode configuration for the systematic investigation of photo-induced field emission (PFE) from metallic or semiconducting cathodes. These are exposed to electric fields up to 400 MV∕m and laser irradiation by means of hole or mesh gates. Cathodes and gates are in situ exchangeable and adjustable with high precision to ensure a homogeneous extraction of electrons which are partially transmitted to the fixed electron spectrometer. Its hemispherical sector analyzer provides an energy resolution limit of 8 meV. The commissioning of the measurement system has been performed with a tungsten needle. Its temperature showed up in the high-energy tail of the electron spectrum, while its work function was derived from the spectral low-energy part combined with the integral current-voltage curve. First PFE measurements on B-doped Si-tip arrays yielded a small field emission current increase under green laser illumination. A shift and splitting of the energy spectra was observed which revealed different emission regimes as well as the photosensitivity of the cathode due to carrier excitation into the conduction band. For the full exploitation of the PFE system, a tunable laser over a wide eV-range is required.</abstract>
    <parentTitle language="eng">The Review of scientific instruments</parentTitle>
    <identifier type="doi">10.1063/1.3673475</identifier>
    <identifier type="pmid">22299940</identifier>
    <enrichment key="opus.import.date">2022-08-24T10:21:08+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Benjamin Bornmann</author>
    <author>Stephan Mingels</author>
    <author>Florian Dams</author>
    <author>Christian Prommesberger</author>
    <author>Rupert Schreiner</author>
    <author>Dirk Lützenkirchen-Hecht</author>
    <author>Günter Müller</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlm">Schreiner, Rupert (Prof. Dr.), Zeitschriftenaufsätze - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>5370</id>
    <completedYear/>
    <publishedYear>2011</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>101</pageFirst>
    <pageLast>102</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Field emission spectroscopy studies on photo-sensitive p-doped Si-tip arrays</title>
    <abstract language="eng">The influence of laser illumination on the integral as well as on the energy-resolved electron currents from well-defined p-doped Si-tip arrays was investigated. First results have provided stable cathode currents between 100 nA and 500 μA in a field range of 2-20 V/μm. Green laser illumination resulted in an enhanced cathode current and an increased population of the conduction band which can be seen in the spectra. Charging of the cathode surface, however, leads to a shift and broadening of the spectra which complicate their analysis. Therefore, further experiments with a rotatable cathode and a varying number of tips as well as with a tunable laser are planned.</abstract>
    <parentTitle language="eng">24th International Vacuum Nanoelectronics Conference (IVNC), 2011 : 18 - 22 July 2011, Historische Stadthalle Wuppertal, Germany</parentTitle>
    <identifier type="url">https://ieeexplore.ieee.org/document/6004582?arnumber=6004582</identifier>
    <identifier type="isbn">978-3-00-035081-8</identifier>
    <identifier type="isbn">978-1-4577-1243-2</identifier>
    <identifier type="issn">2380-6311</identifier>
    <identifier type="issn">2164-2370</identifier>
    <enrichment key="opus.import.date">2022-08-24T10:21:08+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">true</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Benjamin Bornmann</author>
    <author>Stephan Mingels</author>
    <author>Dirk Lützenkirchen-Hecht</author>
    <author>Günter Müller</author>
    <author>Florian Dams</author>
    <author>Rupert Schreiner</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>cathodes</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>conduction bands</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>electron field emission</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>elemental semiconductors</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emission spectroscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emitter arrays</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>laser illumination</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>lighting</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>p-doped silicon tips</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>photo sensitivity</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>5326</id>
    <completedYear/>
    <publishedYear>2011</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>144</pageFirst>
    <pageLast>145</pageLast>
    <pageNumber>2</pageNumber>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace>Piscataway, NJ</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Simulation of electron trajectories of a field emission electron source in triode configuration by using finite element methods</title>
    <abstract language="eng">The finite element simulation program COMSOL Multiphysics® was used to simulate the emission efficiency of a silicon tip electron source in triode configuration for different geometries and electrode potentials. The simulation predicts a maximum emission efficiency of 84% for an optimized structure. In a second simulation a gate electrode was concentrically arranged above a single CNT column. Here, the efficiency was simulated as a function of gate hole geometry, electrode potentials and distances between the electrodes. The simulation shows that a conical shape of the gate hole results in an efficiency up to nearly 100%.</abstract>
    <parentTitle language="eng">24th International Vacuum Nanoelectronics Conference (IVNC), 2011 : 18 - 22 July 2011, Historische Stadthalle Wuppertal, Germany</parentTitle>
    <identifier type="url">https://ieeexplore.ieee.org/document/6004589</identifier>
    <identifier type="isbn">978-3-00-035081-8</identifier>
    <identifier type="isbn">978-1-4577-1243-2</identifier>
    <identifier type="issn">2380-6311</identifier>
    <identifier type="issn">2164-2370</identifier>
    <enrichment key="opus.import.date">2022-08-24T10:21:08+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Christian Prommesberger</author>
    <author>Florian Dams</author>
    <author>Christoph Langer</author>
    <author>Rupert Schreiner</author>
    <author>S. Rutkowski</author>
    <author>Benjamin Bornmann</author>
    <author>Günter Müller</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>carbon nanotubes</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>electron field emission</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>electron source simulation</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>finite element analysis</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>simulation of electron trajectories</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>triodes</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
</export-example>
