<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>3700</id>
    <completedYear/>
    <publishedYear>2015</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>178</pageFirst>
    <pageLast>179</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Semiconductor field emission electron sources using a modular system concept for application in sensors and x-ray-sources</title>
    <abstract language="eng">Semiconductor field emitters are suitable candidates for applications, which require a very stable field emission (FE) current and a high emission uniformity over the entire emission area. By using different materials and geometries, we are able to vary the FE characteristics within a wide range. Each specific application requires its own optimized design for the cathode as well as for the other parts of the FE electron source. To meet as many of these requirements as possible while using only a limited number of different prefabricated components, we established a modular system concept for our FE electron source. This allows the implementation of almost every cathode material. For first characterizations, we used gated p-type Si cathodes with 16 tips. We obtained stable FE currents of 0.4 μA for a grid-potential of 400 V and a gate potential of 100 V. Almost 100% of the electrons are emitted towards the grid-electrode. Parasitic leakage paths, as well as the electron emission towards the gate-electrode can be neglected. Approximately 10% of the electrons are transmitted through the grid and reach the external anode. This is in good agreement with the optical transmission through the grid-mesh.</abstract>
    <parentTitle language="eng">2015 28th International Vacuum Nanoelectronics Conference (IVNC), 13-17 July 2015, Guangzhou, China</parentTitle>
    <identifier type="doi">10.1109/IVNC.2015.7225572</identifier>
    <enrichment key="opus.import.date">2022-04-28T18:45:44+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Rupert Schreiner</author>
    <author>Christoph Langer</author>
    <author>Christian Prommesberger</author>
    <author>Robert Damian Ławrowski</author>
    <author>Florian Dams</author>
    <author>Michael Bachmann</author>
    <author>F. Düsberg</author>
    <author>Martin Hofmann</author>
    <author>Andreas Pahlke</author>
    <author>Pavel Serbun</author>
    <author>Stephan Mingels</author>
    <author>Günter Müller</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Anodes</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>CATHODES</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>electron sources</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>GEOMETRY</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Iron</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Logic gates</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>semiconductor field emission</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
  </doc>
  <doc>
    <id>3749</id>
    <completedYear/>
    <publishedYear>2015</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>106</pageFirst>
    <pageLast>107</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Field emission from surface textured GaN with buried double-heterostructures</title>
    <abstract language="eng">In this contribution we report on field emission (FE) cathodes based on thin-film LED-technology and surface texturing. The FE cathode can be used both as an n-GaN cathode with an electrical contact at the top side metallization as well as a pn-GaN diode contacting only the p-GaN layer at the bottom side of the structure. The local and integral FE properties of the textured surface of the LED structure were investigated. For n-GaN an integral emission current up to 1.0 μA at an electric field of 19 V/μm was achieved. The pn-GaN diode measurements showed an integral current saturation behavior with two orders of magnitude lower FE currents. Regulated voltage scans obtained by FE scanning microscopy revealed a well-distributed emission over the whole cathode area. Measurements under pulsed tunable laser illumination and moderate electric fields indicated charge carrier generation in the buried double-heterostructures at photon energies below 3.5 eV besides normal photoemission above 4.1 eV.</abstract>
    <parentTitle language="eng">2015 28th International Vacuum Nanoelectronics Conference (IVNC), 13-17 July 2015, Guangzhou, China</parentTitle>
    <identifier type="doi">10.1109/IVNC.2015.7225548</identifier>
    <enrichment key="opus.import.date">2022-04-28T19:21:54+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Robert Damian Ławrowski</author>
    <author>Christoph Langer</author>
    <author>Christian Prommesberger</author>
    <author>Rupert Schreiner</author>
    <author>Stephan Mingels</author>
    <author>Vitali Porshyn</author>
    <author>Pavel Serbun</author>
    <author>Günter Müller</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>CATHODES</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Current measurement</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Electric fields</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emission</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Gallium nitride</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>GaN</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Iron</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Light emitting diodes</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>photoemission</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Surface texture</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>3698</id>
    <completedYear/>
    <publishedYear>2016</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>2</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Photo-enhanced field emission properties of p-doped black Si arrays</title>
    <abstract language="eng">We have carried out systematic investigations of p-type black Si field emitter arrays under laser illumination. As expected the current-voltage characteristic revealed a strong saturation providing a high photosensitivity, which had a maximum on-off ratio of 43 at a maximum current of 13 μA. The saturation current was stable in the dark as well as under illumination with fluctuations &lt;;0.7%. Results from time-resolved measurements of the photo-sensitivity showed a rather fast response but a long decay time. Electron spectra in the dark and under laser illumination revealed the origin of the emission.</abstract>
    <parentTitle language="eng">2016 29th International Vacuum Nanoelectronics Conference (IVNC), 11-15 July 2016, Vancouver, BC, Canada</parentTitle>
    <identifier type="doi">10.1109/IVNC.2016.7551447</identifier>
    <enrichment key="opus.import.date">2022-04-28T18:45:44+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Stephan Mingels</author>
    <author>Vitali Porshyn</author>
    <author>Pavel Serbun</author>
    <author>Dirk Lützenkirchen-Hecht</author>
    <author>Günter Müller</author>
    <author>Christian Prommesberger</author>
    <author>Christoph Langer</author>
    <author>Rupert Schreiner</author>
    <author>Dirk Lutzenkirchen-Hecht</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>black Si</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Decision support systems</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>photo-enhanced field emission</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>4764</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Field emission from surface textured extraction facets of GaN light emitting diodes</title>
    <abstract language="eng">We report on the field emission properties of GaN LED surfaces. The textured extraction facet acts both as light scattering layer in order to increase the light extraction efficiency of the LED as well as nanostructured cathode surface for the field emission (FE) of electrons. The LED emits blue light with a peak wavelength of around 450 nm. The FE properties were investigated by a scanning microscope. Integral measurements as well as regulated voltage scans for 1 nA FE current over an area of 400 * 400 µm2were used to investigate both overall and local FE properties. A high number of well-distributed emitters with an average field enhancement factor ß of 85 and stable integral emission currents up to 100 µA at an electric field of   80 V/µm (Øanode= 880 µm) were found. Photo-field-emission spectroscopy (PFES) using a tunable pulsed laser revealed an enhanced photo absorption of the InGaN/GaN quantum well structures near the emission wavelength of the LED (&lt;3.5 eV), whereas at high photon energies (&gt;4.1 eV) photoemission from the GaN surface was observed.</abstract>
    <parentTitle language="eng">26th International Vacuum Nanoelectronics Conference (IVNC), 8-12 July 2013, Roanoke, VA, USA</parentTitle>
    <identifier type="doi">10.1109/ivnc.2013.6624721</identifier>
    <enrichment key="opus.import.date">2022-07-06T16:27:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Rupert Schreiner</author>
    <author>Christoph Langer</author>
    <author>Christian Prommesberger</author>
    <author>Stephan Mingels</author>
    <author>Pavel Serbun</author>
    <author>Günter Müller</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Gallium nitride</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Iron</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Light emitting diodes</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Cathodes</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Surface texture</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Surface waves</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Photonics</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
</export-example>
