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<export-example>
  <doc>
    <id>5323</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>6</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>2014</volume>
    <type>article</type>
    <publisherName>Hindawi</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Improvement of Homogeneity and Aspect Ratio of Silicon Tips for Field Emission by Reactive-Ion Etching</title>
    <abstract language="eng">The homogeneity of emitters is very important for the performance of field emission (FE) devices. Reactive-ion etching (RIE) and oxidation have significant influences on the geometry of silicon tips. The RIE influences mainly the anisotropy of the emitters. Pressure has a strong impact on the anisotropic factor. Reducing the pressure results in a higher anisotropy, but the etch rate is also lower. A longer time of etching compensates this effect. Furthermore an improvement of homogeneity was observed. The impact of uprating is quite low for the anisotropic factor, but significant for the homogeneity. At low power the height and undercut of the emitters are more constant over the whole wafer. The oxidation itself is very homogeneous and has no observable effect on further variation of the homogeneity. This modified fabrication process allows solving the problem of inhomogeneity of previous field emission arrays.</abstract>
    <parentTitle language="eng">Advances in Materials Science and Engineering. Special issue: Advances in Smart Materials and Applications</parentTitle>
    <identifier type="doi">10.1155/2014/948708</identifier>
    <identifier type="issn">1687-8442</identifier>
    <identifier type="issn">1687-8434</identifier>
    <enrichment key="opus.import.date">2022-08-24T10:21:08+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <author>Robert Damian Ławrowski</author>
    <author>Christian Prommesberger</author>
    <author>Christoph Langer</author>
    <author>Florian Dams</author>
    <author>Rupert Schreiner</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlm">Schreiner, Rupert (Prof. Dr.), Zeitschriftenaufsätze - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>868</id>
    <completedYear/>
    <publishedYear>2020</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>032801</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>3</issue>
    <volume>38</volume>
    <type>article</type>
    <publisherName>AIP Publishing</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Field emission from nanotubes and flakes of transition metal dichalcogenides</title>
    <abstract language="eng">Transition metal dichalcogenides such as MoS2 and WS2 are low-dimensional semiconductor materials. MoS2 and WS2 nanotubes and flakes were grown by a chemical transport reaction under a temperature gradient. I2 was used as a transport agent for previously synthesized MoS2 and WS2, respectively. These multilayered nanotubes are indirect bandgap semiconductors with a bandgap depending on their diameter. WS2 flakes were prepared by the sulfurization of thin WOx flakes. To increase the field enhancement of such low-dimensional structures by a higher aspect ratio, two approaches were examined: (a) the MoS2 and WS2 nanotubes were attached individually by a focused ion beam with Pt on dry etched n-type Si pillars and (b) the WS2 flakes were grown directly on the surface of the (n-type and p-type) Si pillars. Integral field emission measurements were performed in a diode configuration with a 50 μm mica spacer in a vacuum chamber at pressures of about 10−9 mbar. At a voltage of 900 V (18 MV/m), the integral emission current from the nanotubes is up to 11 μA for the lateral mounted MoS2 and about 1.3 μA (1.0 μA) for the upright mounted WS2 (MoS2). The onset voltage for a current of 1 nA is about 550 V for MoS2 and 500 V for WS2, respectively. The voltage conversion factor is in the range of 6 × 104–8 × 104 cm−1 for the nanotubes. The mounted MoS2 flakes show a field emission current of about 6 μA at 18 MV/m in contrast to the directly grown WS2 flakes, which show a pronounced saturation regime and, therefore, a lower emission current of about 0.5 μA is reached at 1500 V (25 MV/m). The WS2 flakes show a two times higher (1 × 105 cm−1) voltage conversion factor in comparison to the MoS2 flakes (5 × 104 cm−1). The extracted characteristics of the current-limiting part show a difference in the behavior of the extracted current-limiting characteristics between the lateral (linear) and upright mounted (exponential) nanotubes and the MoS2 flakes. In contrast, the WS2 flakes show charge carrier depletion effects.</abstract>
    <parentTitle language="eng">Journal of Vacuum Science and Technology B</parentTitle>
    <identifier type="doi">10.1116/1.5140474</identifier>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Robert Damian Ławrowski</author>
    <author>Luka Pirker</author>
    <author>Keita Kaneko</author>
    <author>Hiroki Kokubo</author>
    <author>Michael Bachmann</author>
    <author>Takashi Ikuno</author>
    <author>Maja Remskar</author>
    <author>Rupert Schreiner</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlm">Schreiner, Rupert (Prof. Dr.), Zeitschriftenaufsätze - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>5825</id>
    <completedYear/>
    <publishedYear>2023</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>8</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>article</type>
    <publisherName>Wiley</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">MoₓWₓ₋₁S₂ Nanotubes for Advanced Field Emission Application</title>
    <abstract language="eng">Transition metal dichalcogenide (TMDC) nanotubes complement the field of low-dimensional materials with their quasi-1D morphology and a wide set of intriguing properties. By introducing different transition metals into the crystal structure, their properties can be tailored for specific purpose and applications. Herein, the characterization and a subsequent preparation of single-nanotube field emission devices of MoxWx-1S2 nanotubes prepared via the chemical vapor transport reaction is presented. Energy-dispersive X-ray spectroscopy, Raman spectroscopy, and X-ray diffraction  indicate that the molybdenum and tungsten atoms are randomly distributed within the crystal structure and that the material is highly crystalline. High resolution transmission electron microscopy  and electron diffraction (ED) patterns further corroborate these findings. A detailed analysis of the ED patterns from an eight-layer nanotube reveal that the nanotubes grow in the 2H structure, with each shell consists of one bilayer. The work function of the nanotubes is comparable to that of pure MoS2 and lower of pure WS2 NTs, making them ideal candidates for field emission applications. Two devices with different geometrical setup are prepared and tested as field emitters, showing promising results for single nanotube field emission applications.</abstract>
    <parentTitle language="eng">Advanced Functional Materials</parentTitle>
    <identifier type="doi">10.1002/adfm.202213869</identifier>
    <identifier type="issn">1616-3028</identifier>
    <note>Early View. Online Version of Record before inclusion in an issue</note>
    <enrichment key="opus.import.date">2023-02-14T16:16:10+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Creative Commons - CC BY - Namensnennung 4.0 International</licence>
    <author>Luka Pirker</author>
    <author>Robert Damian Ławrowski</author>
    <author>Rupert Schreiner</author>
    <author>Maja Remškar</author>
    <author>Bojana Višić</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlm">Schreiner, Rupert (Prof. Dr.), Zeitschriftenaufsätze - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="oaweg" number="">Hybrid Open Access - OA-Veröffentlichung in einer Subskriptionszeitschrift/-medium</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
</export-example>
