<?xml version="1.0" encoding="utf-8"?>
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  <doc>
    <id>4656</id>
    <completedYear/>
    <publishedYear>2017</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst>131</pageFirst>
    <pageLast>134</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>VDE-Verlag</publisherName>
    <publisherPlace>München</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Leuchtdiodenchips mit dreidimensional epitaktisch gewachsenen kristallinen GaN Säulen</title>
    <abstract language="deu">Um die Eigenschaften von Leuchtdioden zu verbessern und den Herstellungsprozess zu vereinfachen, wurde ein erweitertes Verfahren der metallorganischen Gasphasenepitaxie verwendet, um dichtgepackte dreidimensionale GaN-Säulen mit hohen Aspektverhältnis auf Chipoberflächen zu wachsen. Diese selbstorganisierenden dreidimensionalen Strukturen sollen einerseits die lichtabstrahlende Oberfläche der Leuchtdiode bei gleichbleibender Chipgröße vergrößern und andererseits durch die nichtpolaren Kristallebenen an den Seiten- und Deckflächen der Säulen die Effizienz dieser Bauteile erhöhen. Messungen an ersten Bauteilen, die mit dieser Methode realisiert wurden, zeigen eine homogene blaue Emission bei Wellenlängen von 450 nm und abgestrahlte Lichtleistungen von bereits mehr als 50 mW bei Stromdichten von 120 A/cm². Diese Ergebnisse sind bereits sehr vielversprechend und lassen eine deutliche Performancesteigerung bei Optimierung der Herstellungstechnologie erwarten.</abstract>
    <abstract language="eng">In order to increase the performance and to simplify the production of light emitting diode chips, an advanced metal organic vapor-phase-epitaxy process was used for the growth of densely packed high-aspect-ratio GaN microrods on the chip surface. The purpose of these self-organizing structures is, to increase the effective light emitting surface of the chip as well as to improve the efficiency. Measurements on first structures have shown blue emission at wavelengths of 450 nm and emitted output power of more than 50 mW at current densities of 120 A/cm². These promising results let us expect a significant improvement when optimizing the fabrication process further.</abstract>
    <parentTitle language="deu">7. MikroSystemTechnik Kongress "MEMS, Mikroelektronik, Systeme", 23.-25. Oktober 2017, München</parentTitle>
    <additionalTitle language="eng">Light emitting diodes based on three-dimensional epitaxial grown crystalline GaN rods</additionalTitle>
    <identifier type="isbn">978-3-8007-4491-6</identifier>
    <enrichment key="opus.import.date">2022-07-03T14:30:54+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Robert Damian Ławrowski</author>
    <author>Sonja Deml</author>
    <author>T. Varghese</author>
    <author>T. Schimpke</author>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Aufbauorganisation</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Ausgangsleistung</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>dreidimensionale Struktur</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Fertigungstechnologie</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Herstellungsablauf</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Kristallebene</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Leuchtdiode</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Metalldampf</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>metallorganische Gasphasenepitaxie</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>organischer Dampf</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Produktionsprozess</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Stromdichte</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Wellenlänge</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
  </doc>
  <doc>
    <id>4682</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst>28</pageFirst>
    <pageLast>35</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Cluster Mikrosystemtechnik</publisherName>
    <publisherPlace>Landshut</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Spitzen- und Kantenemitter aus Silizium mit einem hohen Aspektverhältnis für Ionisationsgassensoren</title>
    <abstract language="deu">Durch die Optimierung von reaktivem Ionenätzen mit induktiv gekoppeltem Plasma ist die Herstellung von verschiedenen Siliziumkathoden mit hoher Anisotropie und hohem Aspektverhältnis für Feldemissionsanwendungen möglich. Simulationen mit COMSOL Multiphysics untermauern das Potential von solchen Spitzen- und Kantenfeldemittern. Die Ergebnisse der Simulation zeigen einen zwei- bis sechsfach höheren Feldüberhöhungsfaktor der tiefgeätzten Strukturen im Vergleich zu identischen Emittern ohne zusätzliche Tiefenätzung. Feldemissionsmessungen bestätigen die Simulationsergebnisse. Der modifizierte Herstellungsprozess der Feldemitter ermöglicht somit einen zuverlässigen Betrieb von Feldemissionselektronenquellen bei kleineren makroskopischen Feldstärken. Außerdem weisen die Messungen des Emissionsstroms im Sättigungsbereich eine weitgehende Unabhängigkeit vom elektrischen Feld auf. Lokale Feldemissionsmessungen ergeben dadurch eine deutliche Stromstabilisierung, welche über große Feldstärkenbereiche konstant bleibt. Die Nutzung der HAR-Emitter (high aspect ratio) ist damit eine gute Voraussetzung für einen zuverlässigen Betrieb der Emissionskathoden bei kleinen Feldstärken für die Anwendung in Ionisationsgassensoren.</abstract>
    <parentTitle language="deu">Mikrosystemtechnik als Schlüsseltechnologie der Systemintegration : 4. Landshuter Symposium Mikrosystemtechnik ; Tagungsband zum Symposium ; 12./13. März 2014, Hochschule Landshut</parentTitle>
    <identifier type="isbn">978-3-9812696-5-9</identifier>
    <enrichment key="opus.import.date">2022-07-03T14:30:54+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="OtherSeries">Tagungsbände / Landshuter Symposium Mikrosystemtechnik ; 4</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Robert Damian Ławrowski</author>
    <author>Christoph Langer</author>
    <author>Christian Prommesberger</author>
    <author>Florian Dams</author>
    <author>Pavel Serbun</author>
    <author>Günter Müller</author>
    <author>Rupert Schreiner</author>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Emitter</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Feldelektronenemission</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Gassensor</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Herstellung</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Ionenemission</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>uncontrolled</type>
      <value>Silicium</value>
    </subject>
    <collection role="ddc" number="621">Angewandte Physik</collection>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>5323</id>
    <completedYear/>
    <publishedYear>2014</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>6</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>2014</volume>
    <type>article</type>
    <publisherName>Hindawi</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Improvement of Homogeneity and Aspect Ratio of Silicon Tips for Field Emission by Reactive-Ion Etching</title>
    <abstract language="eng">The homogeneity of emitters is very important for the performance of field emission (FE) devices. Reactive-ion etching (RIE) and oxidation have significant influences on the geometry of silicon tips. The RIE influences mainly the anisotropy of the emitters. Pressure has a strong impact on the anisotropic factor. Reducing the pressure results in a higher anisotropy, but the etch rate is also lower. A longer time of etching compensates this effect. Furthermore an improvement of homogeneity was observed. The impact of uprating is quite low for the anisotropic factor, but significant for the homogeneity. At low power the height and undercut of the emitters are more constant over the whole wafer. The oxidation itself is very homogeneous and has no observable effect on further variation of the homogeneity. This modified fabrication process allows solving the problem of inhomogeneity of previous field emission arrays.</abstract>
    <parentTitle language="eng">Advances in Materials Science and Engineering. Special issue: Advances in Smart Materials and Applications</parentTitle>
    <identifier type="doi">10.1155/2014/948708</identifier>
    <identifier type="issn">1687-8442</identifier>
    <identifier type="issn">1687-8434</identifier>
    <enrichment key="opus.import.date">2022-08-24T10:21:08+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <author>Robert Damian Ławrowski</author>
    <author>Christian Prommesberger</author>
    <author>Christoph Langer</author>
    <author>Florian Dams</author>
    <author>Rupert Schreiner</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlm">Schreiner, Rupert (Prof. Dr.), Zeitschriftenaufsätze - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>5394</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>67</pageFirst>
    <pageLast>69</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>Shaker</publisherName>
    <publisherPlace>Aachen</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation>Organizer: Hochschule Amberg-Weiden</contributingCorporation>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Influence of reactive ion etching parameters on the geometry of silicon tip cathodes for field emission</title>
    <parentTitle language="eng">Applied Research Conference 2013, ARC 2013 : 17th and 18th October 2013, Deggendorf</parentTitle>
    <identifier type="isbn">978-3-8440-2274-2</identifier>
    <enrichment key="opus.import.date">2022-08-24T10:21:08+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="OtherSeries">Konferenz im Forschungsmaster - Master of Applied Research, MAPRby</enrichment>
    <enrichment key="opus.doi.autoCreate">false</enrichment>
    <enrichment key="opus.urn.autoCreate">true</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Robert Damian Ławrowski</author>
    <author>Christian Prommesberger</author>
    <author>Christoph Langer</author>
    <author>Florian Dams</author>
    <author>Rupert Schreiner</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>5322</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst>47</pageFirst>
    <pageLast>48</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>bookpart</type>
    <publisherName/>
    <publisherPlace>Regensburg</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Feldemissionselektronenquellen basierend auf Siliziumemittern mit hohen Aspektverhältnis</title>
    <parentTitle language="deu">Forschungsbericht der OTH Regensburg 2013</parentTitle>
    <identifier type="url">https://doi.org/10.35096/othr/pub-799</identifier>
    <enrichment key="opus.import.date">2022-08-24T10:21:08+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Robert Damian Ławrowski</author>
    <author>Christian Prommesberger</author>
    <author>Christoph Langer</author>
    <author>Florian Dams</author>
    <author>Rupert Schreiner</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlm">Schreiner, Rupert (Prof. Dr.), Zeitschriftenaufsätze - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>1383</id>
    <completedYear/>
    <publishedYear>2017</publishedYear>
    <thesisYearAccepted/>
    <language>deu</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>periodicalpart</type>
    <publisherName/>
    <publisherPlace>Regensburg</publisherPlace>
    <creatingCorporation>Ostbayerische Technische Hochschule Regensburg</creatingCorporation>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="deu">Forschungsbericht 2017</title>
    <identifier type="isbn">978-3-9818209-3-5</identifier>
    <identifier type="urn">urn:nbn:de:bvb:898-opus4-13835</identifier>
    <identifier type="doi">10.35096/othr/pub-1383</identifier>
    <author>Karsten Weber</author>
    <author>Sebastian Dendorfer</author>
    <author>Franz Süß</author>
    <author>Simone Kubowitsch</author>
    <author>Thomas Schratzenstaller</author>
    <author>Sonja Haug</author>
    <author>Christa Mohr</author>
    <author>Hans Kiesl</author>
    <author>Jörg Drechsler</author>
    <author>Markus Westner</author>
    <author>Jörn Kobus</author>
    <author>Martin J. W. Schubert</author>
    <author>Stefan Zenger</author>
    <author>Alexander Pietsch</author>
    <author>Josef Weiß</author>
    <author>Sebastian Hinterseer</author>
    <author>Roland Schieck</author>
    <author>Stefanie Scherzinger</author>
    <author>Meike Klettke</author>
    <author>Andreas Ringlstetter</author>
    <author>Uta Störl</author>
    <author>Tegawendé F. Bissyandé</author>
    <author>Achim Seeburger</author>
    <author>Timo Schindler</author>
    <author>Ralf Ramsauer</author>
    <author>Jan Kiszka</author>
    <author>Andreas Kölbl</author>
    <author>Daniel Lohmann</author>
    <author>Wolfgang Mauerer</author>
    <author>Johannes Maier</author>
    <author>Ulrike Scorna</author>
    <author>Christoph Palm</author>
    <author>Alexander Soska</author>
    <author>Jürgen Mottok</author>
    <author>Andreas Ellermeier</author>
    <author>Daniel Vögele</author>
    <author>Stefan Hierl</author>
    <author>Ulrich Briem</author>
    <author>Knut Buschmann</author>
    <author>Ingo Ehrlich</author>
    <author>Christian Pongratz</author>
    <author>Benjamin Pielmeier</author>
    <author>Quirin Tyroller</author>
    <author>Gareth J. Monkman</author>
    <author>Franz Gut</author>
    <author>Carina Roth</author>
    <author>Peter Hausler</author>
    <author>Rudolf Bierl</author>
    <author>Christian Prommesberger</author>
    <author>Robert Damian Ławrowski</author>
    <author>Christoph Langer</author>
    <author>Rupert Schreiner</author>
    <author>Yifeng Huang</author>
    <author>Juncong She</author>
    <author>Andreas Ottl</author>
    <author>Walter Rieger</author>
    <author>Agnes Kraml</author>
    <author>Thomas Poxleitner</author>
    <author>Simon Hofer</author>
    <author>Benjamin Heisterkamp</author>
    <author>Maximilian Lerch</author>
    <author>Nike Sammer</author>
    <author>Olivia Golde</author>
    <author>Felix Wellnitz</author>
    <author>Sandra Schmid</author>
    <author>Claudia Muntschick</author>
    <author>Wolfgang Kusterle</author>
    <author>Ivan Paric</author>
    <author>Oliver Brückl</author>
    <author>Matthias Haslbeck</author>
    <author>Ottfried Schmidt</author>
    <author>Peter Schwanzer</author>
    <author>Hans-Peter Rabl</author>
    <author>Michael Sterner</author>
    <author>Franz Bauer</author>
    <author>Sven Steinmann</author>
    <author>Fabian Eckert</author>
    <author>Andreas Hofrichter</author>
    <series>
      <title>Forschungsberichte der OTH Regensburg</title>
      <number>2017</number>
    </series>
    <subject>
      <language>deu</language>
      <type>swd</type>
      <value>Forschung</value>
    </subject>
    <subject>
      <language>deu</language>
      <type>swd</type>
      <value>Forschungsbericht</value>
    </subject>
    <collection role="institutes" number="HL">Hochschulleitung/Hochschulverwaltung</collection>
    <collection role="othpublikationsherkunft" number="">Von der OTH Regensburg herausgegeben</collection>
    <collection role="persons" number="weberlate">Weber, Karsten (Prof. Dr.) - Labor für Technikfolgenabschätzung und Angewandte Ethik</collection>
    <collection role="institutes" number="IAFW">Zentrum für Forschung und Transfer (ZFT ab 2024; vorher: IAFW)</collection>
    <collection role="persons" number="sternerfenes">Sterner, Michael (Prof. Dr.) - FENES / Forschungsgruppe Energiespeicher</collection>
    <collection role="persons" number="bruecklfenes">Brückl, Oliver (Prof. Dr.) - FENES / Forschungsgruppe Energienetze</collection>
    <collection role="persons" number="hauglasofo">Haug, Sonja (Prof. Dr.) - Labor Empirische Sozialforschung</collection>
    <thesisPublisher>Ostbayerische Technische Hochschule Regensburg</thesisPublisher>
    <file>https://opus4.kobv.de/opus4-oth-regensburg/files/1383/Forschungsbericht_OTHR_2017.pdf</file>
  </doc>
  <doc>
    <id>3755</id>
    <completedYear/>
    <publishedYear>2015</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>204</pageFirst>
    <pageLast>205</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Stability investigation of high aspect ratio n-type silicon field emitter arrays</title>
    <abstract language="eng">Electron sources based on silicon field emitter arrays, produced in processes based on semiconductor technology, are good candidates for a miniaturized X-ray source. A key parameter for this application is the stability of the X-ray photon flux and, thus, the emission current. In the present work we have investigated the influence of the residual gas pressure and a resistor in series on the emission stability of a high aspect ratio n-type silicon emitter array with hybrid extraction electrode. An increase of current fluctuations was found for pressures above 10-6 mbar. High resistances in series to the emitter array alter the emission characteristics, but greatly suppress spikes in the emission current and improve its stability. This, however, strongly depends on the bias point. The field enhancement factor is not affected by the resistance. In a long term measurement the emission current was found to be constant after an initial phase of degradation.</abstract>
    <parentTitle language="eng">2015 28th International Vacuum Nanoelectronics Conference (IVNC), 13-17 July 2015, Guangzhou, China</parentTitle>
    <identifier type="doi">10.1109/IVNC.2015.7225584</identifier>
    <enrichment key="opus.import.date">2022-04-28T19:21:54+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Michael Bachmann</author>
    <author>Florian Dams</author>
    <author>F. Düsberg</author>
    <author>Martin Hofmann</author>
    <author>Andreas Pahlke</author>
    <author>Christoph Langer</author>
    <author>Robert Damian Ławrowski</author>
    <author>Christian Prommesberger</author>
    <author>Rupert Schreiner</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Current measurement</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>emission current stability</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emitter array</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Field emitter arrays</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RESISTANCE</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Resistors</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>semiconductor field emission</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon tips</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Stability analysis</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Thermal stability</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>XRF spectroscopy</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>868</id>
    <completedYear/>
    <publishedYear>2020</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>032801</pageFirst>
    <pageLast/>
    <pageNumber/>
    <edition/>
    <issue>3</issue>
    <volume>38</volume>
    <type>article</type>
    <publisherName>AIP Publishing</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Field emission from nanotubes and flakes of transition metal dichalcogenides</title>
    <abstract language="eng">Transition metal dichalcogenides such as MoS2 and WS2 are low-dimensional semiconductor materials. MoS2 and WS2 nanotubes and flakes were grown by a chemical transport reaction under a temperature gradient. I2 was used as a transport agent for previously synthesized MoS2 and WS2, respectively. These multilayered nanotubes are indirect bandgap semiconductors with a bandgap depending on their diameter. WS2 flakes were prepared by the sulfurization of thin WOx flakes. To increase the field enhancement of such low-dimensional structures by a higher aspect ratio, two approaches were examined: (a) the MoS2 and WS2 nanotubes were attached individually by a focused ion beam with Pt on dry etched n-type Si pillars and (b) the WS2 flakes were grown directly on the surface of the (n-type and p-type) Si pillars. Integral field emission measurements were performed in a diode configuration with a 50 μm mica spacer in a vacuum chamber at pressures of about 10−9 mbar. At a voltage of 900 V (18 MV/m), the integral emission current from the nanotubes is up to 11 μA for the lateral mounted MoS2 and about 1.3 μA (1.0 μA) for the upright mounted WS2 (MoS2). The onset voltage for a current of 1 nA is about 550 V for MoS2 and 500 V for WS2, respectively. The voltage conversion factor is in the range of 6 × 104–8 × 104 cm−1 for the nanotubes. The mounted MoS2 flakes show a field emission current of about 6 μA at 18 MV/m in contrast to the directly grown WS2 flakes, which show a pronounced saturation regime and, therefore, a lower emission current of about 0.5 μA is reached at 1500 V (25 MV/m). The WS2 flakes show a two times higher (1 × 105 cm−1) voltage conversion factor in comparison to the MoS2 flakes (5 × 104 cm−1). The extracted characteristics of the current-limiting part show a difference in the behavior of the extracted current-limiting characteristics between the lateral (linear) and upright mounted (exponential) nanotubes and the MoS2 flakes. In contrast, the WS2 flakes show charge carrier depletion effects.</abstract>
    <parentTitle language="eng">Journal of Vacuum Science and Technology B</parentTitle>
    <identifier type="doi">10.1116/1.5140474</identifier>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Robert Damian Ławrowski</author>
    <author>Luka Pirker</author>
    <author>Keita Kaneko</author>
    <author>Hiroki Kokubo</author>
    <author>Michael Bachmann</author>
    <author>Takashi Ikuno</author>
    <author>Maja Remskar</author>
    <author>Rupert Schreiner</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlm">Schreiner, Rupert (Prof. Dr.), Zeitschriftenaufsätze - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>1071</id>
    <completedYear/>
    <publishedYear>2018</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst/>
    <pageLast/>
    <pageNumber>1-2</pageNumber>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>2021-02-04</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Field emission behavior of single n- and p-type black Si pillar structures</title>
    <abstract language="eng">We have investigated the properties of single n- and p-type black silicon (b-Si) pillars with a height of 20 μ m under strong electric field and halogen lamp or laser illumination. For both type of b-Si pillar structures, I-V measurements revealed strong activation effects, which consisted in sudden current increases during the first up/down voltage sweeps. The maximum reproducible emission current from a single n-type b-Si pillar structure was about 15 μ A. A pronounced saturation region at 240 nA was observed for a single p-type b-Si pillar. The current fluctuation over time showed a standard deviation of 28% and 2.5% for n- and p-type single b-Si pillar structures, respectively. Optical switching under halogen lamp illumination resulted in at least 3 times higher saturation currents and showed a linear dependence of the FE current on the laser power.</abstract>
    <parentTitle language="eng">International Vacuum Nanoelectronics Conference (IVNC), 31st, 2018, Kyoto, Japan</parentTitle>
    <identifier type="doi">10.1109/IVNC.2018.8520292</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Pavel Serbun</author>
    <author>Vitali Porshyn</author>
    <author>Günter Müller</author>
    <author>Dirk Lützenkirchen-Hecht</author>
    <author>Christian Prommesberger</author>
    <author>Christoph Langer</author>
    <author>Robert Damian Ławrowski</author>
    <author>Rupert Schreiner</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emission</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>black silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>photoemission</value>
    </subject>
    <collection role="ddc" number="621">Angewandte Physik</collection>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16317">Sensorik</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
  <doc>
    <id>1140</id>
    <completedYear/>
    <publishedYear>2016</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>181</pageFirst>
    <pageLast>182</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Field emission behavior of Au-tip-coated p-type Si pillar structures</title>
    <abstract language="eng">Precisely aligned high-aspect-ratio (HAR) silicon tip arrays were fabricated using enhanced reactive ion etching with an inductively-coupled-plasma followed by a sharpening oxidation. A gold thin film was then sputtered only on the tips of the HAR structures. Field-emission (FE) properties from Au-coated HAR p-Si tip array cathodes have been systematically investigated by means of field emission scanning microscopy (FESM). A rather high efficiency of the HAR Si structures (71% at 550 V), but limited homogeneous FE with currents of 1-600 nA might be correlated with the varying geometry of the tips and the presence of oxides. I-V measurements of single Au-coated HAR emitters revealed activation effects and the saturation current region at 3 nA. An increase of the saturation current by 4 orders of magnitude was observed during 20 hours of conditioning at constant voltage, which finally resulted in nearly reproducible FN curves with a ß-factor of 473. An excellent stability of the emission current of less than 1 % was obtained during the additional long-time conditioning at constant voltage. Optical switching under halogen lamp illumination resulted in at least 2 times higher saturation currents and showed a linear dependence of the FE current on the light color temperature.</abstract>
    <parentTitle language="eng">29th International Vacuum Nanoelectronics Conference (IVNC), 2016, 11-15 July,  Vancouver, BC, Canada</parentTitle>
    <identifier type="issn">2380-6311</identifier>
    <identifier type="doi">10.1109/IVNC.2016.7551516</identifier>
    <enrichment key="opus.source">publish</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <author>Pavel Serbun</author>
    <author>Vitali Porshyn</author>
    <author>Günter Müller</author>
    <author>Stephan Mingels</author>
    <author>Dirk Lützenkirchen-Hecht</author>
    <author>Michael Bachmann</author>
    <author>Felix Düsberg</author>
    <author>Florian Dams</author>
    <author>Martin Hofmann</author>
    <author>Andreas Pahlke</author>
    <author>Christian Prommesberger</author>
    <author>Christoph Langer</author>
    <author>Robert Damian Ławrowski</author>
    <author>Rupert Schreiner</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emission</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>p-type Si-pillar array</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>surface oxide effects</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>photoemission</value>
    </subject>
    <collection role="ddc" number="621">Angewandte Physik</collection>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
</export-example>
