<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>4067</id>
    <completedYear/>
    <publishedYear>2006</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>4451</pageFirst>
    <pageLast>4455</pageLast>
    <pageNumber/>
    <edition/>
    <issue>17</issue>
    <volume>17</volume>
    <type>article</type>
    <publisherName>IOP</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Mechanism of the nanoscale localization of Ge quantum dot nucleation on focused ion beam templated Si(001) surfaces</title>
    <abstract language="eng">We investigate the fundamental mechanism by which self-assembled Ge islands can be nucleated at specific sites on Si(001) using ultra-low-dose focused ion beam (FIB) pre-patterning. Island nucleation is controlled by a nanotopography that forms after the implantation of Ga ions during subsequent thermal annealing of the substrate. This nanotopography evolves during the annealing stage, changing from a nanoscale annular depression associated with each focused ion beam spot to a nanoscale pit, and eventually disappearing (planarizing). The correspondence of Ge quantum dot nucleation sites to the focused ion beam features requires a growth surface upon which the nanotopography is preserved. A further key observation is that the Ge wetting layer thickness is reduced in patterned regions, allowing the formation of islands on the templated regions without nucleation elsewhere. These results provide routes to the greatly enhanced design and control of quantum dot distributions and dimensions.</abstract>
    <parentTitle language="eng">Nanotechnology</parentTitle>
    <identifier type="doi">10.1088/0957-4484/17/17/028</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>A. Portavoce</author>
    <author>Martin Kammler</author>
    <author>Robert Hull</author>
    <author>Mark C. Reuter</author>
    <author>Frances M. Ross</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4061</id>
    <completedYear/>
    <publishedYear>2009</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>25</pageFirst>
    <pageLast>30</pageLast>
    <pageNumber/>
    <edition/>
    <issue>1-2</issue>
    <volume>12</volume>
    <type>article</type>
    <publisherName>Elsevier</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Growth of nanostructures by locally modified surface reactivity</title>
    <abstract language="eng">The chemical vapor deposition (CVD) of Si and Ge on Si(0 0 1) substrates covered by 1 monolayer of Ga has been studied. Ga modifies surface reactivity and surface atom mobility. We show that islanding occurs during Ga-mediated CVD even in the absence of strain, allowing for the formation of islands without a wetting layer or with a thinner wetting layer. The morphology of the grown layer is highly dependent on kinetic parameters, i.e. growth temperature and growth pressure, that control Si and Ge deposition and Ga desorption. Si Ga-mediated CVD promotes the formation of self-assembled epitaxial Si islands exhibiting {1 1 3} facets. Ge islands grown by Ga-mediated CVD present reduced lateral sizes and an increased surface density compared to non Ga-mediated CVD. The growth morphology (particularly island size and density) can be understood by considering a qualitative model in which atoms are deposited only on sites whose dangling bonds are not passivated by Ga. We suggest that modification of surface reactivity during surfactant-mediated CVD can thus provide a new degree of freedom for quantum dot fabrication.</abstract>
    <parentTitle language="eng">Materials Science in Semiconductor Processing</parentTitle>
    <identifier type="doi">10.1016/j.mssp.2009.07.001</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>A. Portavoce</author>
    <author>Martin Kammler</author>
    <author>Robert Hull</author>
    <author>Mark C. Reuter</author>
    <author>M. Copel</author>
    <author>Frances M. Ross</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>UHV TEM</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>UHV CVD</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Epitaxial growth</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Si</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Ge</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Surfactant Ga</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4050</id>
    <completedYear/>
    <publishedYear>2013</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>126</pageFirst>
    <pageLast>131</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>127</volume>
    <type>article</type>
    <publisherName>Elsevier</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Microstructural changes in silicon induced by patterning with focused ion beams of Ga, Si and Au</title>
    <abstract language="eng">We use focused beams of Ga(+), Au(+) and Si(++) ions to induce local microstructural changes in single crystal silicon. The ions were delivered as single spot pulses into thin Si membranes that could subsequently be imaged and annealed in situ in a transmission electron microscope. For each ion, the focused ion beam implantation created an array of amorphous regions in the crystalline membrane. Annealing causes solid phase epitaxial regrowth to take place, but we show that the resulting microstructure depends on the ion species. For Ga(+) and Au(+), precipitates remain after recrystallization, while for Si(++), dislocation loops form around the periphery of each implanted spot. We attribute these loops to defects formed during solid phase epitaxial regrowth, with controlled placement of the loops possible.</abstract>
    <parentTitle language="eng">Ultramicroscopy</parentTitle>
    <identifier type="doi">10.1016/j.ultramic.2012.07.004</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>See Wee Chee</author>
    <author>Martin Kammler</author>
    <author>Prabhu Balasubramanian</author>
    <author>Mark C. Reuter</author>
    <author>Robert Hull</author>
    <author>Frances M. Ross</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>dislocation engineering</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>focused ion beam</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>In situ electron microscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>solid phase epitaxial regrowth</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4080</id>
    <completedYear/>
    <publishedYear>2003</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1093</pageFirst>
    <pageLast>1095</pageLast>
    <pageNumber/>
    <edition/>
    <issue>7</issue>
    <volume>82</volume>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Lateral control of self-assembled island nucleation by focused-ion-beam micropatterning</title>
    <abstract language="eng">We demonstrate that the nucleation sites of nanoscale, self-assembled Ge islands on Si(001) can be controlled by patterning the Si surface in situ with a focused ion beam. At low doses of 6000 Ga+ ions per &lt;100 nm spot, the selective growth is achieved without modifying the initial surface topography. At larger doses, topographic effects produced by sputtering and redeposition control the selective nucleation sites. Islands grown on irradiated spots are smaller with higher aspect ratio than islands grown on clean Si(001), suggesting a strong surfactant effect of Ga.</abstract>
    <parentTitle language="eng">Applied Physics Letters</parentTitle>
    <identifier type="doi">10.1063/1.1542680</identifier>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Martin Kammler</author>
    <author>Robert Hull</author>
    <author>Mark C. Reuter</author>
    <author>Frances M. Ross</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4078</id>
    <completedYear/>
    <publishedYear>2003</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>132</pageFirst>
    <pageLast>134</pageLast>
    <pageNumber/>
    <edition/>
    <issue>S02</issue>
    <volume>9</volume>
    <type>article</type>
    <publisherName>Microscopy Society of America</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">In-Situ Focused Ion Beam Micropatterning of Ge Islands</title>
    <parentTitle language="eng">Microscopy and Microanalysis</parentTitle>
    <identifier type="doi">10.1017/S1431927603441214</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Martin Kammler</author>
    <author>Robert Hull</author>
    <author>A. Portavoce</author>
    <author>Mark C. Reuter</author>
    <author>Frances M. Ross</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>4073</id>
    <completedYear/>
    <publishedYear>2004</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>2687</pageFirst>
    <pageLast>2702</pageLast>
    <pageNumber/>
    <edition/>
    <issue>25-26</issue>
    <volume>84</volume>
    <type>article</type>
    <publisherName>Taylor &amp; Francis</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">In-situ observations of self-assembled island nucleation on patterned substrates</title>
    <abstract language="eng">We compare in-situ electron microscopy observations of Ge island growth on Si surfaces modulated by different techniques. Si(001) substrates were patterned either using a focused Ga ion beam or lithographically to produce similar feature sizes. In the case of the focused-ion-beam patterned substrates, chemical or strain effects caused by low Ga doses control the positions at which islands nucleate. Nucleation on topographically modulated substrates, with the pattern produced either by high-dose sputtering or lithographically, is controlled by the nature of the side walls of topographic features. The two patterning approaches have different benefits in creating arrays of islands for device applications.</abstract>
    <parentTitle language="eng">Philosophical Magazine</parentTitle>
    <identifier type="doi">10.1080/14786430410001671430</identifier>
    <enrichment key="opus.import.date">2022-06-07T14:31:45+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="ConferenceStatement">Special Issue: International Symposium on In-situ Electron Microscopy, Nagoya, Japan, 20-22 January 2003</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Frances M. Ross</author>
    <author>Martin Kammler</author>
    <author>Mark C. Reuter</author>
    <author>Robert Hull</author>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
  <doc>
    <id>3113</id>
    <completedYear/>
    <publishedYear>2018</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>10</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume>8</volume>
    <type>article</type>
    <publisherName>Nature</publisherName>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Directed Self-Assembly of Ge Quantum Dots Using Focused Si2+ Ion Beam Patterning</title>
    <abstract language="eng">We show that templating a Si surface with a focused beam of Si2+ or Si+ ions can create suitable nucleation sites for the subsequent growth of self-assembled Ge quantum dots by chemical vapor deposition. To determine the mechanism of patterning we use atomic force microscopy to show that, similar to Ga+ patterning, the formation of a surface pit is required to enable control over Ge quantum dot locations. We find that relatively high implantation doses are required to achieve patterning, and these doses lead to amorphization of the substrate. We assess the degree to which the substrate crystallinity can be recovered by subsequent processing. Using in situ transmission electron microscopy heating experiments we find that recrystallization is possible at the growth temperature of the Ge quantum dots, but defects remain that follow the pattern of the initial implantation. We discuss the formation mechanism of the defects and the benefits of using Si ions for patterning both defects and quantum dots on Si substrates.</abstract>
    <parentTitle language="eng">scientific reports</parentTitle>
    <identifier type="doi">10.1038/s41598-018-27512-z</identifier>
    <enrichment key="opus.import.date">2022-03-17T06:05:16+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Creative Commons - CC BY - Namensnennung 4.0 International</licence>
    <author>See Wee Chee</author>
    <author>Martin Kammler</author>
    <author>Jeremy Graham</author>
    <author>Lynne Gignac</author>
    <author>Mark C. Reuter</author>
    <author>Robert Hull</author>
    <author>Frances M. Ross</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>ARRAYS</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>AU</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>DAMAGE</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>GROWTH</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>IMPLANTATION</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>NUCLEATION</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>RECOVERY</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>TECHNOLOGY</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="oaweg" number="">Gold Open Access- Erstveröffentlichung in einem/als Open-Access-Medium</collection>
    <collection role="othforschungsschwerpunkt" number="16314">Lebenswissenschaften und Ethik</collection>
    <collection role="institutes" number="">Labor Nanoanalytik und Halbleiterchemie (Nanochem)</collection>
  </doc>
</export-example>
