<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>5401</id>
    <completedYear/>
    <publishedYear>2012</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>1</pageFirst>
    <pageLast>2</pageLast>
    <pageNumber/>
    <edition/>
    <issue/>
    <volume/>
    <type>conferenceobject</type>
    <publisherName>IEEE</publisherName>
    <publisherPlace>Piscataway, NJ.</publisherPlace>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Highly uniform and stable electron field emission from B-doped Si-tip arrays for applications in integrated vacuum microelectronic devices</title>
    <abstract language="eng">In order to improve the uniformity and field emission stability of p-type silicon tip arrays for pulsed sensor applications, we have systematically studied the influence of the fabrication parameters on the tip shape and the specific operating conditions. Based on detailed design calculations of the field enhancement, we have fabricated a series of hexagonal arrays of B-doped Si-tips in a triangular arrangement, each containing a different number of tips (91, 575 and 1300) of 1 μm height, 20 nm apex radius, and 20 μm pitch. The field emission properties of both individual tips and complete arrays were investigated with by field emission scanning microscopy. The current plateaus of these tips typically occur at about 10 nA and 60 V/μm field level. In this carrier depletion range, single tips provide the highest current stability (&lt;; 4%) and optical current switching ratios of ~2.5. Rather homogeneous emission of the tip arrays leads to an almost linear scaling of the saturation current (2 nA/tip) and to a much improved current stability (&lt;; 1%) measured over 1 hour.</abstract>
    <parentTitle language="eng">25th International Vacuum Nanoelectronics Conference (IVNC) - Jeju, Korea (South), 09.07. - 13.07.2012</parentTitle>
    <identifier type="isbn">978-1-4673-1984-3</identifier>
    <identifier type="doi">10.1109/IVNC.2012.6316857</identifier>
    <identifier type="isbn">978-1-4673-1983-6</identifier>
    <identifier type="isbn">978-1-4673-1982-9</identifier>
    <identifier type="issn">2380-6311</identifier>
    <identifier type="issn">2164-2370</identifier>
    <enrichment key="opus.import.date">2022-08-24T10:21:08+00:00</enrichment>
    <enrichment key="opus.source">sword</enrichment>
    <enrichment key="opus.import.user">importuser</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <licence>Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG</licence>
    <author>Rupert Schreiner</author>
    <author>Christian Prommesberger</author>
    <author>Christoph Langer</author>
    <author>Florian Dams</author>
    <author>Pavel Serbun</author>
    <author>Benjamin Bornmann</author>
    <author>Aliaksandr Navitski</author>
    <author>Günter Müller</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>boron</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>circuit stability</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>elemental semiconductors</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emission ion microscopy</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>field emitter arrays</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>integrated optoelectronics</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>microfabrication</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>microsensors</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>optical switches</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>silicon tips</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="persons" number="schreinerlmconf">Schreiner, Rupert (Prof. Dr.), Konferenzbeiträge - Labor für Mikrosensorik</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Mikrosensorik</collection>
  </doc>
</export-example>
