<?xml version="1.0" encoding="utf-8"?>
<export-example>
  <doc>
    <id>2048</id>
    <completedYear/>
    <publishedYear>2005</publishedYear>
    <thesisYearAccepted/>
    <language>eng</language>
    <pageFirst>630</pageFirst>
    <pageLast>636</pageLast>
    <pageNumber/>
    <edition/>
    <issue>4</issue>
    <volume>28</volume>
    <type>article</type>
    <publisherName/>
    <publisherPlace/>
    <creatingCorporation/>
    <contributingCorporation/>
    <belongsToBibliography>0</belongsToBibliography>
    <completedDate>--</completedDate>
    <publishedDate>--</publishedDate>
    <thesisDateAccepted>--</thesisDateAccepted>
    <title language="eng">Transient junction-to-case thermal resistance measurement methodology of high accuracy and high repeatability</title>
    <abstract language="eng">High-power packages show a characteristic three-dimensional heat flow resulting in large lateral changes in chip and case surface temperature. This paper proposes an unambiguous definition for the R/sub thJC/ junction-to-case thermal resistance as a key parameter of such packages based on a transient measurement technique ensuring high repeatability even at very low R/sub th/ values. The technique is illustrated on thermal transient measurements of high-power MOSFET devices. It is also presented how the same measurement results can be used for die attach quality analysis. Finally, a comparative method is shown for measuring the differences of R/sub th/ values among samples with many times higher resolution compared with a direct R/sub thJC/ measurement.</abstract>
    <parentTitle language="eng">IEEE Transactions on Components and Packaging Technologies</parentTitle>
    <identifier type="doi">10.1109/TCAPT.2005.859768</identifier>
    <identifier type="issn">1521-3331</identifier>
    <enrichment key="ConferenceStatement">Therminic 2004 Conference, Sophia Antipolis, France, 2004</enrichment>
    <enrichment key="BegutachtungStatus">peer-reviewed</enrichment>
    <author>Peter Szabó</author>
    <author>Oliver Steffens</author>
    <author>Michael Lenz</author>
    <author>Gábor Farkas</author>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Thermal resistance</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Electrical resistance measurement</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Temperature</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Packaging</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Cold plates</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>MOSFET circuits</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Semiconductor device measurement</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Surface resistance</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Microassembly</value>
    </subject>
    <subject>
      <language>eng</language>
      <type>uncontrolled</type>
      <value>Thermal conductivity</value>
    </subject>
    <collection role="institutes" number="FakANK">Fakultät Angewandte Natur- und Kulturwissenschaften</collection>
    <collection role="othpublikationsherkunft" number="">Externe Publikationen</collection>
    <collection role="othforschungsschwerpunkt" number="16316">Produktion und Systeme</collection>
    <collection role="institutes" number="">Labor Bauphysik</collection>
  </doc>
</export-example>
