@article{HuttererBauhuberHummeletal., author = {Hutterer, Albert and Bauhuber, Michael and Hummel, Helmut and Lechner, Alfred}, title = {Real-time analyses of metal contaminations in the ppb-range}, series = {Solid State Phenomena}, volume = {195}, journal = {Solid State Phenomena}, publisher = {Trans Tech Publications}, doi = {10.4028/www.scientific.net/SSP.195}, pages = {269 -- 273}, abstract = {In high-tech processing even smallest concentrations of metal ions in process media are of the utmost significance because they cause expensive production failures. Currently, cost-intensive equipment, special trained staff and time consuming analyses are necessary to detect these contaminations in order to avoid failures. The Centers of Excellence Nanochem and Sensorics at the University of Applied Sciences Regensburg (owner of patent PCT/EP2010/064833) and their industrial partner Micro-Epsilon GmbH are developing a new miniaturized measurement device which allows cost-effective real-time analysis of fluidic media for the first time. The system is fully automated and can be directly connected to wet-etch benches. Hence it allows continuous real-time surveillance of metal contaminations in the ppb-range through absorption spectroscopy in process media. For this purpose a very small sample amount of the process medium and a specific complexing agent are mixed together. This leads to an increase in the molar extinction coefficients and though even smallest contaminations become visible. The main parts of our development are the simulation of the different system components, their production and chemical analyses with the evaluation model.}, language = {en} } @article{PeterDalmerLechneretal., author = {Peter, Daniel and Dalmer, Michael and Lechner, Alfred and Gigler, Alexander M. and Stark, Robert W. and Bensch, Wolfgang}, title = {Measurement of the mechanical stability of semiconductor line structures in drying liquids with application to pattern collapse}, series = {Journal of Micromechanics and Microengineering}, volume = {21}, journal = {Journal of Micromechanics and Microengineering}, number = {2}, publisher = {IOP Science}, doi = {10.1088/0960-1317/21/2/025001}, abstract = {Enhanced particle removal processes in wet cleaning as well as drying processes of semiconductor wafers can cause significant lateral forces on surface structures. These forces, however, must not exceed the mechanical stability of structures on the wafer. Thus, a mechanical fracture test was used to assess the lateral mechanical stability of polysilicon line structures in relevant process liquids. The mechanical test was based on nanomanipulation with an atomic force microscope. Compared to fracture tests in air, data acquired in liquid isopropanol revealed a stabilizing effect. The differences in fracture forces can be attributed to a stress corrosion process on the surface. The size of the generated damage was influenced by the viscosity of the surrounding media.}, language = {en} } @inproceedings{PeterDalmerLotnyketal., author = {Peter, Daniel and Dalmer, Michael and Lotnyk, Andriy and Kienle, Lorenz and Lechner, Alfred and Bensch, Wolfgang}, title = {Solid bridging during pattern collapse (stiction) studied on silicon nanoparticles}, series = {MRS Online Proceedings Library}, volume = {1299}, booktitle = {MRS Online Proceedings Library}, publisher = {Springer Nature}, doi = {10.1557/opl.2011.397}, pages = {191 -- 196}, abstract = {The high surface to volume ratio of nanoparticles allows a detailed experimental study of the surface phenomena associated with solid bridging. Besides bulk analyses, the local view on the structure and composition via HRTEM is particularly essential. 50 nm core shell particles consisting of a silicon (Si) core and a SiO2 shell were used as model system to understand surface phenomena appearing for Si-based nanostructures. Evaporative drying from de-ionized water shows the most significant bridging effect based on SiO2. There is only a localized deposition of oxides between the particles during the drying process and no overall oxidation. For the deposition material, silicates are the most likely candidates.}, language = {en} } @article{PeterHolsteynsDalmeretal., author = {Peter, Daniel and Holsteyns, Frank and Dalmer, Michael and Kruwinus, Hans and Lechner, Alfred and Bensch, Wolfgang}, title = {A Study on the Structure Collapse Mechanisms for High Aspect Ratio Structures with Application to Clean Processing}, series = {ECS Meeting Abstracts}, volume = {MA2009-02}, journal = {ECS Meeting Abstracts}, number = {24}, publisher = {IOP Science}, doi = {10.1149/MA2009-02/24/2084}, language = {en} } @unpublished{SchwarzPastoetterTranetal., author = {Schwarz, Tobias and Past{\"o}tter, Angelina and Tran, Trung and Schlosser, Marc and Kaulen, Corinna and Lechner, Alfred and Kammler, Martin and Slabon, Adam}, title = {Effect of Temperature on the Growth of Cu(I)O Nanocubes: The Impact of the Copper Precursor Species}, series = {SSRN}, journal = {SSRN}, publisher = {Elsevier}, doi = {10.2139/ssrn.4909639}, abstract = {Cuprous oxide (Cu2O) nanoparticles were synthesized using a wet chemical surfactant free method at different synthesis temperatures from 25 ◦C to 60 ◦C. Morphology, size, and chemical composition of the prepared Cu2O nanoparticles were analyzed by SEM, PXRD, and ATR-IR. We discovered that the chemical composition of the Cu2O nanoparticles remained unaffected by the synthesis temperature. However, morphology and size of the nanoparticles showed a strong temperature dependency. This could be attributed to the temperature induced formation of cupric oxide (CuO) species from the copper hydroxide (Cu(OH)2 ) precursor which also functions as copper precursor for the Cu2O nanoparticle growth. The cupric oxide species was determined to be the main cause for the formation of micrometer sized particles, whereas with the Cu(OH)2 precursor species for the Cu2O nanoparticles nanocubes with smaller edge lengths as well as octahedrons were obtained.}, language = {en} } @article{PeterDalmerLechneretal., author = {Peter, Daniel and Dalmer, Michael and Lechner, Alfred and Gigler, Alexander M. and Stark, Robert W. and Bensch, Wolfgang}, title = {The influence of liquid media on the fracture strength of polysilicon nanostructures}, series = {Solid State Phenomena}, volume = {187}, journal = {Solid State Phenomena}, publisher = {Trans Tech Publications}, doi = {10.4028/www.scientific.net/SSP.187.127}, pages = {127 -- 130}, abstract = {The mechanical stability of nanostructures depends on the surrounding medium. Their stability was probed by lateral force microscopy in liquid media. Previously reported data on water and isopropanol showed an increase in the fracture strength for the latter. Further tests with other alcohols (ethanol, 1-butanol) also showed an increasing strength. The interface between the liquid and the surface is the decisive factor for the influence of the media. When altering the interface with a cationic surfactant or a self-assembled monolayer, an increase of the fracture force by 100 \% compared to de-ionized water could be measured.}, language = {en} } @article{SokolowskiTintenBlomeBlumsetal., author = {Sokolowski-Tinten, Klaus and Blome, Christian and Blums, Juris and Dietrich, Clemens and Tarsevitch, Alexander and Horn-von Hoegen, Michael and von der Linde, Dietrich and Cavalleri, Andrea and Kammler, Martin and Uschmann, Ingo and Foerster, Eckhart}, title = {Femtosecond X-ray Diffraction Study of Large Amplitude Coherent Optical Phonons in Laser-Excited Bismuth}, series = {Conference on Lasers and Electro-Optics, 1-6 June 2003, Baltimore, Maryland}, journal = {Conference on Lasers and Electro-Optics, 1-6 June 2003, Baltimore, Maryland}, publisher = {Optical Society of America}, abstract = {Femtosecond time-resolved X-ray diffraction was used to directly study optical phonons in laser-excited Bismuth. A periodic modulation of the diffraction efficiency reveals initially coherent lattice distortions with atomic displacements of nearly 10\% of the nearest- neighbor-distance.}, language = {en} } @article{WallKrenzerWippermannetal., author = {Wall, Simone and Krenzer, Boris and Wippermann, Stefan and Sanna, Simone and Klasing, Friedrich and Hanisch-Blicharski, Anja and Kammler, Martin and Schmidt, Wolf Gero and Horn-von Hoegen, Michael}, title = {Atomistic picture of charge density wave formation at surfaces}, series = {Physical review letters}, volume = {109}, journal = {Physical review letters}, number = {18}, publisher = {APS}, doi = {10.1103/PhysRevLett.109.186101}, abstract = {We used ultrafast electron diffraction and density-functional theory calculations to gain insight into the charge density wave (CDW) formation on In/Si(111). Weak excitation by a femtosecond-laser pulse results in the melting of the CDW. The immediate freezing is hindered by a barrier for the motion of atoms during the phase transition: The melted CDW constitutes a long-lived, supercooled phase and is strong evidence for a first-order transition. The freezing into the CDW is triggered by preexisting adsorbates. Starting at these condensation nuclei, the CDW expands one dimensionally on the In/Si(111) surface, with a constant velocity of more than 80 m/s.}, language = {en} } @article{FriggeKalusKlasingetal., author = {Frigge, Tim and Kalus, Annika and Klasing, Friedrich and Kammler, Martin and Hanisch-Blicharski, Anja and Horn-von Hoegen, Michael}, title = {Nanoscale Heat Transport in Self-Organized Ge Clusters on Si(001)}, series = {MRS Online Proceedings Library}, journal = {MRS Online Proceedings Library}, publisher = {Springer}, doi = {10.1557/opl.2013.148}, pages = {45 -- 50}, abstract = {Ultrafast time resolved transmission electron diffraction (TED) in a reflection geometry was used to study the cooling behavior of self-organized, well defined nanoscale germanium hut and dome clusters on Si(001). The clusters were heated in a pump-probe scheme by fs-laser pulses. The resulting transient temperature rise was then determined from the drop in diffraction intensity caused by the Debye-Waller effect. From a cooling time of τ=177 ps we estimated a strongly reduced heat transfer compared with homogeneous films of equivalent thickness.}, language = {en} } @article{MoellenbeckHanischBlicharskiSchneideretal., author = {M{\"o}llenbeck, Simone and Hanisch-Blicharski, Anja and Schneider, Paul and Ligges, Manuel and Zhou, Ping and Kammler, Martin and Krenzer, Boris and Horn-von Hoegen, Michael}, title = {Ultra-fast Time-Resolved Electron Diffraction of Strongly Driven Phase Transitions on Silicon Surfaces}, series = {MRS Online Proceedings Library}, journal = {MRS Online Proceedings Library}, publisher = {Springer}, doi = {10.1557/PROC-1230-MM03-09}, abstract = {The dynamics of strongly driven phase transitions at surfaces are studied by ultra-fast time-resolved reflection high energy electron diffraction. The surfaces are excited by an intense fs-laser pulse (pump) and probed by an ultra-short electron pulse with variable time delay. The order-disorder phase transition from a c(4 {\~A}— 2) to a(2 {\~A}— 1) of the bare Si(001) surface shows a transient decrease of the intensity of the c(4 {\~A}— 2) spots which recovers on a time scale of a few hundred picoseconds indicating the excitation of the phase transition. On Si(111) a monolayer of Indium induces a (4 {\~A}— 1) reconstruction which undergoes a Peierls like phase transition to a (8 {\~A}— "2") reconstruction below 100 K. Upon laser excitation with a fluence of 3.4 mJ/cm 2 at a temperature of 72 K the phase transition was strongly driven. The (8 {\~A}— "2")-diffraction spots instantaneously disappears, while the intensity of the (4 {\~A}— 1)-spots increases. This increase of the (4 {\~A}— 1) spot intensity excludes an explanation by the Debye-Waller-Effect and is evidence for a true structural phase transition at a surface. {\^A}© 2010 Materials Research Society.}, language = {en} } @article{LuNicoulShymanovichetal., author = {Lu, Wei and Nicoul, Matthieu and Shymanovich, Uladzimir and Tarsevitch, Alexander and Kammler, Martin and Horn-von Hoegen, Michael and von der Linde, Dietrich and Sokolowski-Tinten, Klaus}, title = {Extreme Phonon Softening in Laser-excited Bismuth - Towards an Inverse Peierls-transition}, series = {MRS Online Proceedings Library}, volume = {1230}, journal = {MRS Online Proceedings Library}, publisher = {Springer}, doi = {10.1557/PROC-1230-MM03-05}, abstract = {Large amplitude coherent optical phonons have been investigated in laser-excited Bismuth by means of femtosecond time-resolved X-ray diffraction. For absorbed laser fluences above 2 mJ/cm2, the experimental data reveal an extreme softening of the excited A1g-mode down to frequencies of about 1 THz, only 1/3 of the unperturbed A1g-frequency. At even stronger excitation the measured diffraction signals no longer exhibit an oscillatory behavior presenting strong indication that upon intense laser-excitation the Peierls-distortion, which defines the equilibrium structure of Bismuth, can be transiently reversed.}, language = {en} } @article{HanischBlicharskiKrenzerMoellenbecketal., author = {Hanisch-Blicharski, Anja and Krenzer, Boris and M{\"o}llenbeck, Simone and Ligges, Manuel and Zhou, Ping and Kammler, Martin and Horn-von Hoegen, Michael}, title = {Transient Cooling of Ultrathin Epitaxial Bi(111)-Films on Si(111) Upon Femtosecond Laser Excitation Studied by Ultrafast Reflection High Energy Electron Diffraction}, series = {MRS Online Proceedings Library}, journal = {MRS Online Proceedings Library}, publisher = {Springer}, doi = {10.1557/PROC-1172-T04-08}, pages = {1 -- 6}, abstract = {With time resolved ultrafast electron diffraction the cooling process across the interface between a thin film and the underlying substrate was studied after excitation with short laser pulses. From the exponential decay of the surface temperature evolution a thermal boundary conductance of 1430 W/(cm2K) is determined for a 9.7 nm thin Bi(111) film on Si(111). A linear dependence between laser fluence and initial temperature rise was measured for film-thicknesses between 2.5 nm and 34.5 nm. The ratio of initial temperature rise and laser fluence for different film-thicknesses is compared to a model taking multilayer optics into account. The data agree well with this model.}, language = {en} } @article{AlFalouKammlerHornvonHoegen, author = {Al-Falou, A. A. and Kammler, Martin and Horn-von Hoegen, Michael}, title = {Strain state analysis of hetero-epitaxial systems}, series = {Europhysics Letters}, volume = {69}, journal = {Europhysics Letters}, number = {4}, publisher = {IOP}, doi = {10.1209/epl/i2004-10399-6}, pages = {570 -- 576}, abstract = {We present a new method to analyze the strain state of epitaxial hetero structures by high-resolution spot profile analysis low-energy electron diffraction. From the variation of the spot profiles with the vertical scattering vector we determine the hetero film roughness, the change of interlayer spacing due to tetragonal distortion, and the variation of the interlayer distance due to partial relaxation of the strained rough film. The practical implementation of this method is simple and can be used to determine the onset of strain-relieving defects during the growth process.}, language = {en} } @article{KammlerHornvonHoegen, author = {Kammler, Martin and Horn-von Hoegen, Michael}, title = {Low energy electron diffraction of epitaxial growth of bismuth on Si(111)}, series = {Surface Science}, volume = {576}, journal = {Surface Science}, number = {1-3}, publisher = {Elsevier}, doi = {10.1016/j.susc.2004.11.033}, pages = {56 -- 60}, abstract = {The epitaxial growth of Bi on Si(1 1 1) studied by spot profile analyzing low energy electron diffraction shows for low coverage rotationally disordered Bi cluster with preferred orientations following the threefold symmetry of the Si substrate. With further deposition the Bi cluster coalesces and the surface orientation changes from the pseudo cubic Bi(1 1 0) surface orientation of the Bi cluster into the hexagonal Bi(1 1 1) surface of the resulting Bi film.}, language = {en} } @inproceedings{SidersCavalleriTothetal., author = {Siders, C. W. and Cavalleri, Andrea and T{\´o}th, Csaba and Wilson, K. R. and Squier, Jeff A. and Barty, C. P. J. and Kammler, Martin and Sokolowski-Tinten, Klaus and Horn-von Hoegen, Michael and von der Linde, D.}, title = {Femtosecond X-ray diffraction of short-pulse irradiated semiconductors}, series = {Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges, 24-24 May 2002, Long Beach, CA, USA}, booktitle = {Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges, 24-24 May 2002, Long Beach, CA, USA}, publisher = {IEEE}, doi = {10.1109/CLEO.2002.1033997}, pages = {297 -- 298}, abstract = {Summary form only given, as follow. Ultrafast optical-pump, X-ray diffraction probe experiments are providing new ways to study transient processes including the direct observation of the atomic motion by which many solid-state processes and chemical and biochemical reactions take place. Current table-top-terawatt femtosecond laser systems provide an attractive source of few-hundred femtosecond duration bursts of angstrom-scale X-ray radiation with fluxes comparable to standard rotating anode sources. Their compact size enables time resolved structural dynamics to be studied in the small laboratory with temporal resolution better than typical molecular vibrational periods. Ultrafast structural dynamics in crystalline samples are readily studied with such systems and experiments to be discussed in this talk include ultrafast non-thermal solid-to-liquid transition in thin single-crystal Ge-111 films grown on Si-111 substrates; ultrafast non-thermal solid-to-solid transitions in bulk vanadium dioxide from a low temperature insulating phase to a high temperature metallic phase; and harmonic and anharmonic coherent acoustic dynamics in layered Ge-111/Si-111 and bulk GaAs-111 samples. Future improvements in high-average power short-pulse lasers will enable the study of a wider class of materials such as amorphous solids or liquid-phase dynamics of simple molecules, while proposed 4th generation light sources based upon single-pass X-ray free-electron lasers will permit singleshot structural determination of complex biomolecules.}, language = {en} } @article{SokolowskiTintenBlomeBlumsetal., author = {Sokolowski-Tinten, Klaus and Blome, Christian and Blums, Juris and Cavalleri, Andrea and Dietrich, Clemens and Tarasevitch, Alexander and Uschmann, Ingo and F{\"o}rster, Eckhard and Kammler, Martin and Horn-von Hoegen, Michael and von der Linde, Dietrich}, title = {Femtosecond X-ray measurement of coherent lattice vibrations near the Lindemann stability limit}, series = {Nature}, volume = {422}, journal = {Nature}, number = {6929}, publisher = {Springer}, doi = {10.1038/nature01490}, pages = {287 -- 289}, abstract = {The study of phase-transition dynamics in solids beyond a time-averaged kinetic description requires direct measurement of the changes in the atomic configuration along the physical pathways leading to the new phase. The timescale of interest is in the range 10(-14) to 10(-12) s. Until recently, only optical techniques were capable of providing adequate time resolution, albeit with indirect sensitivity to structural arrangement. Ultrafast laser-induced changes of long-range order have recently been directly established for some materials using time-resolved X-ray diffraction. However, the measurement of the atomic displacements within the unit cell, as well as their relationship with the stability limit of a structural phase, has to date remained obscure. Here we report time-resolved X-ray diffraction measurements of the coherent atomic displacement of the lattice atoms in photoexcited bismuth close to a phase transition. Excitation of large-amplitude coherent optical phonons gives rise to a periodic modulation of the X-ray diffraction efficiency. Stronger excitation corresponding to atomic displacements exceeding 10 per cent of the nearest-neighbour distance-near the Lindemann limit-leads to a subsequent loss of long-range order, which is most probably due to melting of the material.}, language = {en} } @article{HildSeifertKammleretal., author = {Hild, R. and Seifert, C. and Kammler, Martin and Meyer zu Heringdorf, Frank-Joachim and Horn-von Hoegen, Michael and Zhachuk, R.A and Olshanetsky, B.Z}, title = {Kinetics of Au induced faceting of vicinal Si(111)}, series = {Surface Science}, volume = {512}, journal = {Surface Science}, number = {1-2}, publisher = {Elsevier}, doi = {10.1016/S0039-6028(02)01666-7}, pages = {117 -- 127}, abstract = {Au induced faceting of vicinal Si(1 1 1) has been studied during adsorption at elevated temperature by spot profile analyzing of low energy electron diffraction and after quenching to room temperature by scanning tunneling microscopy. On the surfaces inclined towards five different types of facets form with increasing Au coverage at adsorption temperatures Tads below 800 °C. They are (4 4 3), (7 7 5), (5 5 3), a stepped (2 2 1), and the (3 3 1) facets. Atomic models for the (5 5 3) and (7 7 5) facet planes are proposed on the basis of high resolution STM images. At C we found the formation of an ordered step train which covers the entire surface. With further increasing Au coverage the stepped surface decomposes again into (1 1 1) terraces and step bunches. Driving force is the formation of the Si(1 1 1)-(5×2)-Au reconstruction.}, language = {en} } @article{SokolowskiTintenHornvonHoegenvonderLindeetal., author = {Sokolowski-Tinten, Klaus and Horn-von Hoegen, Michael and von der Linde, D. and Cavalleri, Andrea and Siders, C. W. and Brown, F. L. H. and Leitner, D. M. and T{\´o}th, Csaba and Squier, Jeff A. and Barty, C. P. J. and Wilson, K. R. and Kammler, Martin}, title = {Transient lattice dynamics in fs-laser-excited semiconductors probed by ultrafast X-ray diffraction}, series = {Journal de Physique IV}, volume = {11}, journal = {Journal de Physique IV}, number = {Pr2}, publisher = {EDP}, doi = {10.1051/jp4:2001290}, pages = {473 -- 477}, abstract = {A study of lattice dynamics in fs-laser-excited crystalline bulk Ge and Ge/Si-heterostructures, using time-resolved x-ray diffraction, was presented. Fast energy transport deep into the bulk of the material, coherent acoustic phonon dynamics, lattice anharmonicity, and vibrational transport across a buried interfaces were observed. Graphs showing time-dependent shifts of the centroid of the measured rocking curves in the Ge-overlayer and in the Si-substrate for different fluences, were presented.}, language = {en} } @article{SokolowskiTintenCavalleriSidersetal., author = {Sokolowski-Tinten, Klaus and Cavalleri, Andrea and Siders, C. W. and Brown, F. L. H. and Leitner, D. M. and T{\´o}th, Csaba and Kammler, Martin and Horn-von Hoegen, Michael and von der Linde, D. and Squier, Jeff A. and Barty, C. P. J. and Wilson, K. R.}, title = {Time-resolved x-ray diffraction study of ultrafast acoustic phonon dynamics in Ge/Si-heterostructures}, series = {Chemical Physics}, volume = {66}, journal = {Chemical Physics}, publisher = {Springer}, doi = {10.1007/978-3-642-56546-5_81}, pages = {281 -- 283}, abstract = {Using time-resolved x-ray diffraction the ultafast strain dynamics in fs-laserexcited Ge/Si-heterostructures has been studied. A fluence dependent, anharmonic damping of the impulsively generated acoustic phonons and vibrational transport across the buried Ge/Si-interface are observed.}, language = {en} } @inproceedings{SokolowskiTintenBlomeDietrichetal., author = {Sokolowski-Tinten, Klaus and Blome, Christian and Dietrich, Clemens and Blums, Juris and Horn-von Hoegen, Michael and von der Linde, D. and Cavalleri, Andrea and Squier, Jeff A. and Kammler, Martin}, title = {Structural dynamics in laser-excited solids investigated with femtosecond x-ray diffraction}, series = {2002 Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, 19-24 May 2002, Long Beach, CA, USA}, booktitle = {2002 Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, 19-24 May 2002, Long Beach, CA, USA}, publisher = {IEEE}, doi = {10.1109/QELS.2002.1031182}, pages = {115 -- 116}, abstract = {Summary form only given. Ultrashort x-ray pulses offer a unique combination of atomic-scale spatial and temporal resolution, which permits direct measurements of structural transients on an ultrafast time scale. Using time-resolved X-ray diffraction with femtosecond, multi-keV X-ray pulses we have studied transient lattice dynamics in optically excited semiconductors.}, language = {en} }