@article{PeterDalmerLechneretal., author = {Peter, Daniel and Dalmer, Michael and Lechner, Alfred and Gigler, Alexander M. and Stark, Robert W. and Bensch, Wolfgang}, title = {The influence of liquid media on the fracture strength of polysilicon nanostructures}, series = {Solid State Phenomena}, volume = {187}, journal = {Solid State Phenomena}, publisher = {Trans Tech Publications}, doi = {10.4028/www.scientific.net/SSP.187.127}, pages = {127 -- 130}, abstract = {The mechanical stability of nanostructures depends on the surrounding medium. Their stability was probed by lateral force microscopy in liquid media. Previously reported data on water and isopropanol showed an increase in the fracture strength for the latter. Further tests with other alcohols (ethanol, 1-butanol) also showed an increasing strength. The interface between the liquid and the surface is the decisive factor for the influence of the media. When altering the interface with a cationic surfactant or a self-assembled monolayer, an increase of the fracture force by 100 \% compared to de-ionized water could be measured.}, language = {en} } @article{WallKrenzerWippermannetal., author = {Wall, Simone and Krenzer, Boris and Wippermann, Stefan and Sanna, Simone and Klasing, Friedrich and Hanisch-Blicharski, Anja and Kammler, Martin and Schmidt, Wolf Gero and Horn-von Hoegen, Michael}, title = {Atomistic picture of charge density wave formation at surfaces}, series = {Physical review letters}, volume = {109}, journal = {Physical review letters}, number = {18}, publisher = {APS}, doi = {10.1103/PhysRevLett.109.186101}, abstract = {We used ultrafast electron diffraction and density-functional theory calculations to gain insight into the charge density wave (CDW) formation on In/Si(111). Weak excitation by a femtosecond-laser pulse results in the melting of the CDW. The immediate freezing is hindered by a barrier for the motion of atoms during the phase transition: The melted CDW constitutes a long-lived, supercooled phase and is strong evidence for a first-order transition. The freezing into the CDW is triggered by preexisting adsorbates. Starting at these condensation nuclei, the CDW expands one dimensionally on the In/Si(111) surface, with a constant velocity of more than 80 m/s.}, language = {en} } @article{FriggeKalusKlasingetal., author = {Frigge, Tim and Kalus, Annika and Klasing, Friedrich and Kammler, Martin and Hanisch-Blicharski, Anja and Horn-von Hoegen, Michael}, title = {Nanoscale Heat Transport in Self-Organized Ge Clusters on Si(001)}, series = {MRS Online Proceedings Library}, journal = {MRS Online Proceedings Library}, publisher = {Springer}, doi = {10.1557/opl.2013.148}, pages = {45 -- 50}, abstract = {Ultrafast time resolved transmission electron diffraction (TED) in a reflection geometry was used to study the cooling behavior of self-organized, well defined nanoscale germanium hut and dome clusters on Si(001). The clusters were heated in a pump-probe scheme by fs-laser pulses. The resulting transient temperature rise was then determined from the drop in diffraction intensity caused by the Debye-Waller effect. From a cooling time of τ=177 ps we estimated a strongly reduced heat transfer compared with homogeneous films of equivalent thickness.}, language = {en} } @article{PayerKleinAcetetal., author = {Payer, Thomas and Klein, C. and Acet, M. and Ney, V. and Kammler, Martin and Meyer zu Heringdorf, Frank-Joachim and Horn-von Hoegen, Michael}, title = {High-quality epitaxial Bi(111) films on Si(111) by isochronal annealing}, series = {Thin Solid Films}, volume = {520}, journal = {Thin Solid Films}, number = {23}, publisher = {Elsevier}, doi = {10.1016/j.tsf.2012.06.004}, pages = {6905 -- 6908}, abstract = {Bi(111) films grown on Si(111) at room temperature show a significantly higher roughness compared to Bi films grown on Si(100) utilizing a kinetic pathway based on a low-temperature process. Isochronal annealing steps of 3 min duration each with temperatures up to 200 °C cause a relaxation of the Bi films' lattice parameter toward the Bi bulk value and yield an atomically flat Bi surface. Driving force for the relaxation and surface reordering is the magic mismatch of 11 Bi atoms to 13 Si atoms that emerges at annealing temperatures above 150 °C and reduces the remaining strain to less than 0.2\%.}, language = {en} }