@article{PeterHolsteynsDalmeretal., author = {Peter, Daniel and Holsteyns, Frank and Dalmer, Michael and Kruwinus, Hans and Lechner, Alfred and Bensch, Wolfgang}, title = {A Study on the Structure Collapse Mechanisms for High Aspect Ratio Structures with Application to Clean Processing}, series = {ECS Meeting Abstracts}, volume = {MA2009-02}, journal = {ECS Meeting Abstracts}, number = {24}, publisher = {IOP Science}, doi = {10.1149/MA2009-02/24/2084}, language = {en} } @article{LiebherrHuttererMickertetal., author = {Liebherr, Raphaela B. and Hutterer, Albert and Mickert, Matthias J. and Vogl, Franziska C. and Beutner, Andrea and Lechner, Alfred and Hummel, Helmut and Gorris, Hans H.}, title = {Three-in-one enzyme assay based on single molecule detection in femtoliter arrays}, series = {Analytical and bioanalytical chemistry}, volume = {407}, journal = {Analytical and bioanalytical chemistry}, number = {24}, publisher = {Springer}, doi = {10.1007/s00216-015-8910-0}, pages = {7443 -- 7452}, abstract = {Large arrays of femtoliter-sized chambers are important tools for single molecule research as well as bioanalytical applications. We have optimized the design and fabrication of two array types consisting of 250 × 250 (62 500) femtoliter chambers either by surface etching of fused silica slides or by polydimethylsiloxane (PDMS) molding. Highly diluted solutions of β-galactosidase were enclosed in such arrays to monitor the fluorogenic reactions of hundreds of individual enzyme molecules in parallel by wide-field fluorescence microscopy. An efficient mechanical sealing procedure was developed to prevent diffusion of the fluorescent reaction product out of the chambers. Different approaches for minimizing non-specific surface adsorption were explored. The signal acquisition was optimized to grant both a large field of view and an efficient signal acquisition from each femtoliter chamber. The optimized femtoliter array has enabled a three-in-one enzyme assay system: First, the concentration of active enzyme can be determined in a digital way by counting fluorescent chambers in the array. Second, the activity of the enzyme bulk solution is given by averaging many individual substrate turnover rates without the need for knowing the exact enzyme concentration. Third-unlike conventional enzyme assays-the distribution of individual substrate turnover rates yields insight into the conformational heterogeneity in an enzyme population. The substrate turnover rates of single β-galactosidase molecules were found to be broadly distributed and independent of the type of femtoliter array. In general, both types of femtoliter arrays are highly sensitive platforms for enzyme analysis at the single molecule level and yield consistent results.}, language = {en} } @incollection{BlahnikovaMuellerWaasetal., author = {Blahn{\´i}kov{\´a}, Barbora and M{\"u}ller, D. and Waas, M. and Lechner, Alfred}, title = {Multilyzer - Mikrofluidisches Echtzeitmesssystem f{\"u}r die Analyse umweltrelevanter Substanzen}, series = {7. MikroSystemTechnik Kongress "MEMS, Mikroelektronik, Systeme", 23.-25. Oktober 2017, M{\"u}nchen}, booktitle = {7. MikroSystemTechnik Kongress "MEMS, Mikroelektronik, Systeme", 23.-25. Oktober 2017, M{\"u}nchen}, publisher = {VDE-Verlag}, address = {M{\"u}nchen}, isbn = {978-3-8007-4491-6}, pages = {382 -- 385}, abstract = {Die {\"u}berm{\"a}ßige Verwendung von stickstoffbasierten D{\"u}ngemitteln in der Landwirtschaft stellt eine Gef{\"a}hrdung f{\"u}r die Umwelt und Lebewesen dar. So ist die Analyse von Boden- und Grundwasser zu einem wesentlichen Bestandteil der Nachhaltigkeit und der {\"o}kologischen Erhaltung geworden. Daf{\"u}r bietet der Multilyzer eine passende L{\"o}sung. Der Multilyzer ist ein mikrofluidisches Analysesystem zur Bestimmung niedrigster Konzentrationen von Nitrat, Nitrit und Ammonium, die alle wesentliche Bestandteile des Stickstoffkreislaufs sind. Welche bei {\"U}berm{\"a}ßiger Aufnahme im K{\"o}rper krebserregend wirken und den Sauerstofftransport im Blutkreislauf st{\"o}ren. Der Aufbau ist eine Kombination aus Absorptions- und Fluoreszenzspektroskopie. Der Betrieb mit einer 12 Volt Batterie erm{\"o}glicht die Verwendung des Multilyzer-Systems zur Online-Messung im Feld. Somit k{\"o}nnen sehr kurze Analysezeiten realisiert und der Einfluss von Umwandlungs- bzw. Abbauprozessen vermieden werden. Das gesamte Messsystem wird im Kompetenzzentrum Nanochem an der OTH Regensburg entwickelt, inklusive Fertigungstechnologien, Software- und Hardwaresteuerung.}, language = {de} } @article{HuttererBauhuberHummeletal., author = {Hutterer, Albert and Bauhuber, Michael and Hummel, Helmut and Lechner, Alfred}, title = {Real-time analyses of metal contaminations in the ppb-range}, series = {Solid State Phenomena}, volume = {195}, journal = {Solid State Phenomena}, publisher = {Trans Tech Publications}, doi = {10.4028/www.scientific.net/SSP.195}, pages = {269 -- 273}, abstract = {In high-tech processing even smallest concentrations of metal ions in process media are of the utmost significance because they cause expensive production failures. Currently, cost-intensive equipment, special trained staff and time consuming analyses are necessary to detect these contaminations in order to avoid failures. The Centers of Excellence Nanochem and Sensorics at the University of Applied Sciences Regensburg (owner of patent PCT/EP2010/064833) and their industrial partner Micro-Epsilon GmbH are developing a new miniaturized measurement device which allows cost-effective real-time analysis of fluidic media for the first time. The system is fully automated and can be directly connected to wet-etch benches. Hence it allows continuous real-time surveillance of metal contaminations in the ppb-range through absorption spectroscopy in process media. For this purpose a very small sample amount of the process medium and a specific complexing agent are mixed together. This leads to an increase in the molar extinction coefficients and though even smallest contaminations become visible. The main parts of our development are the simulation of the different system components, their production and chemical analyses with the evaluation model.}, language = {en} } @article{BauhuberMikrievskijLechner, author = {Bauhuber, Michael and Mikrievskij, Andreas and Lechner, Alfred}, title = {Isotropic wet chemical etching of deep channels with optical surface quality in silicon with HNA based etching solutions}, series = {Materials Science in Semiconductor Processing}, volume = {16}, journal = {Materials Science in Semiconductor Processing}, number = {6}, publisher = {Elsevier}, doi = {10.1016/j.mssp.2013.05.017}, pages = {1428 -- 1433}, abstract = {Online trace analysis based on UV/Vis spectroscopy requires long detection paths. Therefore an isotropic wet etch process in silicon is developed to fabricate a 300 µm deep channel with low channel wall roughness for desired light guidance application. Four etchant compositions were compared in terms of etching rate, surface roughness and selectivity in a beaker process. The best fitting mixture was selected. To further increase the surface quality (bubble issue) a spin etcher tool is used for producing the channels. The dependence of homogeneity and defect density on media flux, and rotation velocity was investigated. Results show that high rotation velocity and high media flux lead to great defects in the channel wall. Through rotation of the wafer during etching, the etching rate of silicon rises compared to the beaker process due to the rapid removal of etch products and simultaneous supply of fresh etchant. After 38 min of etching, 300 µm deep semi-circular channels with high optical quality (Rq=10 nm±2 nm) over 3 m were produced.}, language = {de} } @inproceedings{PeterDalmerLotnyketal., author = {Peter, Daniel and Dalmer, Michael and Lotnyk, Andriy and Kienle, Lorenz and Lechner, Alfred and Bensch, Wolfgang}, title = {Solid bridging during pattern collapse (stiction) studied on silicon nanoparticles}, series = {MRS Online Proceedings Library}, volume = {1299}, booktitle = {MRS Online Proceedings Library}, publisher = {Springer Nature}, doi = {10.1557/opl.2011.397}, pages = {191 -- 196}, abstract = {The high surface to volume ratio of nanoparticles allows a detailed experimental study of the surface phenomena associated with solid bridging. Besides bulk analyses, the local view on the structure and composition via HRTEM is particularly essential. 50 nm core shell particles consisting of a silicon (Si) core and a SiO2 shell were used as model system to understand surface phenomena appearing for Si-based nanostructures. Evaporative drying from de-ionized water shows the most significant bridging effect based on SiO2. There is only a localized deposition of oxides between the particles during the drying process and no overall oxidation. For the deposition material, silicates are the most likely candidates.}, language = {en} } @article{PeterDalmerLechneretal., author = {Peter, Daniel and Dalmer, Michael and Lechner, Alfred and Gigler, Alexander M. and Stark, Robert W. and Bensch, Wolfgang}, title = {Measurement of the mechanical stability of semiconductor line structures in drying liquids with application to pattern collapse}, series = {Journal of Micromechanics and Microengineering}, volume = {21}, journal = {Journal of Micromechanics and Microengineering}, number = {2}, publisher = {IOP Science}, doi = {10.1088/0960-1317/21/2/025001}, abstract = {Enhanced particle removal processes in wet cleaning as well as drying processes of semiconductor wafers can cause significant lateral forces on surface structures. These forces, however, must not exceed the mechanical stability of structures on the wafer. Thus, a mechanical fracture test was used to assess the lateral mechanical stability of polysilicon line structures in relevant process liquids. The mechanical test was based on nanomanipulation with an atomic force microscope. Compared to fracture tests in air, data acquired in liquid isopropanol revealed a stabilizing effect. The differences in fracture forces can be attributed to a stress corrosion process on the surface. The size of the generated damage was influenced by the viscosity of the surrounding media.}, language = {en} } @article{PeterDalmerLechneretal., author = {Peter, Daniel and Dalmer, Michael and Lechner, Alfred and Gigler, M. Alexander and Stark, Robert W. and Bensch, Wolfgang}, title = {The influence of liquid media on the fracture strength of polysilicon nanostructures}, series = {Solid State Phenomena}, volume = {187}, journal = {Solid State Phenomena}, publisher = {Trans Tech Publications}, doi = {10.4028/www.scientific.net/SSP.187.127}, pages = {127 -- 130}, abstract = {The mechanical stability of nanostructures depends on the surrounding medium. Their stability was probed by lateral force microscopy in liquid media. Previously reported data on water and isopropanol showed an increase in the fracture strength for the latter. Further tests with other alcohols (ethanol, 1-butanol) also showed an increasing strength. The interface between the liquid and the surface is the decisive factor for the influence of the media. When altering the interface with a cationic surfactant or a self-assembled monolayer, an increase of the fracture force by 100 \% compared to de-ionized water could be measured.}, language = {en} } @article{MelekhovPennWeidaueretal., author = {Melekhov, Evgeny and Penn, Tatjana and Weidauer, Tobias and Abb, Valerius and Kammler, Martin and Lechner, Alfred}, title = {Tunable nanopillar array on a quartz-fiber tip for surface enhanced Raman scattering (SERS) detection}, series = {tm - Technisches Messen}, volume = {89}, journal = {tm - Technisches Messen}, number = {1}, publisher = {de Gruyter}, doi = {10.1515/teme-2021-0093}, pages = {70 -- 81}, abstract = {In this work, a simple two-step method to create tunable self-assembled three-dimensional nanostructure array-like nanoantennas directly on the tip of an optical quartz glass fiber is described. The structures are prepared by using dry etching of the fiber tip. For the etching process, gold nanoparticles fabricated by thermal dewetting technique were used as template. The structures are applied as sensors for label-free analysis of organic substances in ppb range, such as drug residues in liquid solutions. The measurements are carried out by a portable Raman device with an exchangeable sensor head utilizing the SERS-effect. This method allows in situ applications. In order to characterize the SERS cells, para-thiocresol and diclofenac sodium are used as model substances. For optimization of the substrate performance, different thicknesses of the dewetting-layer (6, 9, 12 nm), different etching times for formation of the pillars (6, 8, 10 and 12 min), and different thicknesses of SERS-metallization (25, 50, 75 nm) of gold and silver are compared. In order to show the applicability of the structure on the tip of a fiber, measurements from the upper side and from the underside of the substrate on quartz plates are compared. Reproducible SERS enhancement factors up to 10 7 {10^{7}} were achieved.}, language = {en} } @misc{MelekhovAbbWeidaueretal., author = {Melekhov, Evgeny and Abb, Valerius and Weidauer, Tobias and Kammler, Martin and Lechner, Alfred}, title = {Tunable Nanopillars as Surface Enhanced Raman Scattering (SERS) Active Structure for Optical Quartz Glass Fiber}, series = {SMSI 2021 - Sensors and Instrumentation}, journal = {SMSI 2021 - Sensors and Instrumentation}, publisher = {AMA Association for Sensors and Measurement}, isbn = {978-3-9819376-4-0}, doi = {10.5162/SMSI2021/B8.2}, pages = {153 -- 154}, abstract = {In this work, a simple cost effective method to create tunable self-assembled three-dimensional nanostructure array-like nanoantennas on a tip of an optical quartz glass fiber is described. The structures are prepared using lithography-less dry etching. Gold nanoparticles are used as an etching mask using a thin metal-film thermal dewetting technique. The structures are applied as sensor for label-free analysis of organic substances in ppb range, such as drug residues in groundwater. The measurements are carried out by means of a Surface-enhanced Raman scattering (SERS) effect, an exchangeable sensor head, and a portable Raman device. This method allows in situ applications. Parathiocresol is used as a model substance to characterize the SERS cells. For metallization, gold and silver are compared. Reproducible SERS enhancement factors up to 10 7 are evaluated.}, language = {en} } @inproceedings{SidersCavalleriTothetal., author = {Siders, C. W. and Cavalleri, Andrea and T{\´o}th, Csaba and Wilson, K. R. and Squier, Jeff A. and Barty, C. P. J. and Kammler, Martin and Sokolowski-Tinten, Klaus and Horn-von Hoegen, Michael and von der Linde, D.}, title = {Femtosecond X-ray diffraction of short-pulse irradiated semiconductors}, series = {Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges, 24-24 May 2002, Long Beach, CA, USA}, booktitle = {Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges, 24-24 May 2002, Long Beach, CA, USA}, publisher = {IEEE}, doi = {10.1109/CLEO.2002.1033997}, pages = {297 -- 298}, abstract = {Summary form only given, as follow. Ultrafast optical-pump, X-ray diffraction probe experiments are providing new ways to study transient processes including the direct observation of the atomic motion by which many solid-state processes and chemical and biochemical reactions take place. Current table-top-terawatt femtosecond laser systems provide an attractive source of few-hundred femtosecond duration bursts of angstrom-scale X-ray radiation with fluxes comparable to standard rotating anode sources. Their compact size enables time resolved structural dynamics to be studied in the small laboratory with temporal resolution better than typical molecular vibrational periods. Ultrafast structural dynamics in crystalline samples are readily studied with such systems and experiments to be discussed in this talk include ultrafast non-thermal solid-to-liquid transition in thin single-crystal Ge-111 films grown on Si-111 substrates; ultrafast non-thermal solid-to-solid transitions in bulk vanadium dioxide from a low temperature insulating phase to a high temperature metallic phase; and harmonic and anharmonic coherent acoustic dynamics in layered Ge-111/Si-111 and bulk GaAs-111 samples. Future improvements in high-average power short-pulse lasers will enable the study of a wider class of materials such as amorphous solids or liquid-phase dynamics of simple molecules, while proposed 4th generation light sources based upon single-pass X-ray free-electron lasers will permit singleshot structural determination of complex biomolecules.}, language = {en} } @article{SokolowskiTintenHornvonHoegenvonderLindeetal., author = {Sokolowski-Tinten, Klaus and Horn-von Hoegen, Michael and von der Linde, D. and Cavalleri, Andrea and Siders, C. W. and Brown, F. L. H. and Leitner, D. M. and T{\´o}th, Csaba and Squier, Jeff A. and Barty, C. P. J. and Wilson, K. R. and Kammler, Martin}, title = {Transient lattice dynamics in fs-laser-excited semiconductors probed by ultrafast X-ray diffraction}, series = {Journal de Physique IV}, volume = {11}, journal = {Journal de Physique IV}, number = {Pr2}, publisher = {EDP}, doi = {10.1051/jp4:2001290}, pages = {473 -- 477}, abstract = {A study of lattice dynamics in fs-laser-excited crystalline bulk Ge and Ge/Si-heterostructures, using time-resolved x-ray diffraction, was presented. Fast energy transport deep into the bulk of the material, coherent acoustic phonon dynamics, lattice anharmonicity, and vibrational transport across a buried interfaces were observed. Graphs showing time-dependent shifts of the centroid of the measured rocking curves in the Ge-overlayer and in the Si-substrate for different fluences, were presented.}, language = {en} } @article{CavalleriSidersBrownetal., author = {Cavalleri, Andrea and Siders, C. W. and Brown, F. L. H. and Leitner, D. M. and T{\´o}th, Csaba and Squier, Jeff A. and Barty, C. P. J. and Wilson, K. R. and Sokolowski-Tinten, Klaus and Horn-von Hoegen, Michael and von der Linde, D. and Kammler, Martin}, title = {Anharmonic lattice dynamics in germanium measured with ultrafast x-ray diffraction}, series = {Physical review letters}, volume = {85}, journal = {Physical review letters}, number = {3}, publisher = {APS}, doi = {10.1103/PhysRevLett.85.586}, pages = {586 -- 589}, abstract = {Damping of impulsively generated coherent acoustic oscillations in a femtosecond laser-heated thin germanium film is measured as a function of fluence by means of ultrafast x-ray diffraction. By simultaneously measuring picosecond strain dynamics in the film and in the unexcited silicon substrate, we separate anharmonic damping from acoustic transmission through the buried interface. The measured damping rate and its dependence on the calculated temperature of the thermal bath is consistent with estimated four-body, elastic dephasing times (T2) for 7-GHz longitudinal acoustic phonons in germanium.}, language = {en} } @article{SokolowskiTintenCavalleriSidersetal., author = {Sokolowski-Tinten, Klaus and Cavalleri, Andrea and Siders, C. W. and Brown, F. L. H. and Leitner, D. M. and T{\´o}th, Csaba and Kammler, Martin and Horn-von Hoegen, Michael and von der Linde, D. and Squier, Jeff A. and Barty, C. P. J. and Wilson, K. R.}, title = {Time-resolved x-ray diffraction study of ultrafast acoustic phonon dynamics in Ge/Si-heterostructures}, series = {Chemical Physics}, volume = {66}, journal = {Chemical Physics}, publisher = {Springer}, doi = {10.1007/978-3-642-56546-5_81}, pages = {281 -- 283}, abstract = {Using time-resolved x-ray diffraction the ultafast strain dynamics in fs-laserexcited Ge/Si-heterostructures has been studied. A fluence dependent, anharmonic damping of the impulsively generated acoustic phonons and vibrational transport across the buried Ge/Si-interface are observed.}, language = {en} } @article{SidersCavalleriSokolowskiTintenetal., author = {Siders, C. W. and Cavalleri, Andrea and Sokolowski-Tinten, Klaus and T{\´o}th, Csaba and Guo, T. and Kammler, Martin and Horn-von Hoegen, Michael and Wilson, K. R. and von der Linde, D. and Barty, C. P. J.}, title = {Direct Observation of Ultrafast Non-thermal Melting by Ultrafast X-ray Diffraction}, series = {Ultrafast Phenomena XII}, volume = {66}, journal = {Ultrafast Phenomena XII}, publisher = {Springer}, doi = {10.1007/978-3-642-56546-5_80}, pages = {276 -- 280}, abstract = {Ultrafast nonthermal melting of femtosecond laser-irradiated germanium was observed directly for the first time using sub-picosecond, 1.54-angstrom x-ray diffraction. Such measurements allow the study of transient atomic motion fundamental to many processes in physics, chemistry, and biology.}, language = {en} } @article{SokolowskiTintenBlomeBlumsetal., author = {Sokolowski-Tinten, Klaus and Blome, Christian and Blums, Juris and Shymanovich, Uladzimir and Nicoul, M. and Cavalleri, Andrea and Tarasevitch, A. and Horn-von Hoegen, Michael and Kammler, Martin and von der Linde, D.}, title = {Ultrafast X-ray diffraction}, series = {Ultrafast Phenomena XIV}, volume = {79}, journal = {Ultrafast Phenomena XIV}, publisher = {Springer}, doi = {10.1007/3-540-27213-5_53}, pages = {170 -- 174}, abstract = {In the last few years the generation of femtosecond pulses in the X-ray regime has become possible. These ultrashort X-ray pulses have enabled femtosecond time- resolution to be extended to X-rays.}, language = {en} } @article{SidersCavalleriSokolowskiTintenetal., author = {Siders, C. W. and Cavalleri, Andrea and Sokolowski-Tinten, Klaus and T{\´o}th, Csaba and Guo, T. and Kammler, Martin and Horn-von Hoegen, Michael and Wilson, K. R. and von der Linde, D. and Barty, C. P. J.}, title = {Detection of nonthermal melting by ultrafast X-ray diffraction}, series = {Science}, volume = {286}, journal = {Science}, number = {5443}, doi = {10.1126/science.286.5443.1340}, pages = {1340 -- 1342}, abstract = {Using ultrafast, time-resolved, 1.54 angstrom x-ray diffraction, thermal and ultrafast nonthermal melting of germanium, involving passage through nonequilibrium extreme states of matter, was observed. Such ultrafast, optical-pump, x-ray diffraction probe measurements provide a way to study many other transient processes in physics, chemistry, and biology, including direct observation of the atomic motion by which many solid-state processes and chemical and biochemical reactions take place.}, language = {en} } @inproceedings{SokolowskiTintenBlomeBlumsetal., author = {Sokolowski-Tinten, Klaus and Blome, Christian and Blums, Juris and Shymanovich, Uladzimir and Nicoul, M. and Cavalleri, Andrea and Tarasevitch, A. and Horn-von Hoegen, Michael and Kammler, Martin and von der Linde, Dietrich}, title = {Ultrafast X-ray diffraction}, series = {Ultrafast Phenomena XIV}, volume = {79}, booktitle = {Ultrafast Phenomena XIV}, editor = {Kobayashi, Tetsuro}, publisher = {Springer}, address = {Berlin, Heidelberg}, isbn = {978-3-540-27213-7}, doi = {10.1007/3-540-27213-5_53}, pages = {170 -- 174}, abstract = {In the last few years the generation of femtosecond pulses in the X-ray regime has become possible. These ultrashort X-ray pulses have enabled femtosecond time- resolution to be extended to X-rays.}, language = {en} } @incollection{SokolowskiTintenvonderLindeSidersetal., author = {Sokolowski-Tinten, Klaus and von der Linde, D. and Siders, C. W. and Cavalleri, Andrea and T{\´o}th, Csaba and Guo, T. and Wilson, K. R. and Barty, C. P. J. and Kammler, Martin and Horn-von Hoegen, Michael}, title = {Lattice dynamics of femtosecond laser-excited semiconductors probed by ultrafast x-ray diffraction}, series = {Applications of High Field and Short Wavelength Sources VIII}, booktitle = {Applications of High Field and Short Wavelength Sources VIII}, publisher = {Optica}, doi = {10.1364/HFSW.1999.PD3}, abstract = {The present knowledge of the atomic structure of matter is to a large extent due to x-ray spectroscopies.}, language = {en} } @article{SokolowskiTintenBlomeDietrichetal., author = {Sokolowski-Tinten, Klaus and Blome, Christian and Dietrich, Clemens and Tarasevitch, A. and Horn-von Hoegen, Michael and von der Linde, D. and Cavalleri, Andrea and Squier, Jeff A. and Kammler, Martin}, title = {Femtosecond x-ray measurement of ultrafast melting and large acoustic transients}, series = {Physical review letters}, volume = {87}, journal = {Physical review letters}, publisher = {APS}, doi = {10.1103/PhysRevLett.87.225701}, abstract = {Time-resolved x-ray diffraction with ultrashort ( approximately 300 fs), multi-keV x-ray pulses has been used to study the femtosecond laser-induced solid-to-liquid phase transition in a thin crystalline layer of germanium. Nonthermal melting is observed to take place within 300-500 fs. Following ultrafast melting we observe strong acoustic perturbations evolving on a picosecond time scale.}, language = {en} } @article{SokolowskiTintenBlomeDietrichetal., author = {Sokolowski-Tinten, Klaus and Blome, Christian and Dietrich, Clemens and Tarasevitch, A. and Horn-von Hoegen, Michael and von der Linde, D. and Cavalleri, Andrea and Squier, Jeff A. and Kammler, Martin}, title = {Femtosecond time-resolved X-ray diffraction study of ultrafast structural dynamics in laser-excited solids}, series = {International Conference on Ultrafast Phenomena, 12 May 2002, Vancouver Canada}, volume = {71}, journal = {International Conference on Ultrafast Phenomena, 12 May 2002, Vancouver Canada}, publisher = {Optica Publishing Grou}, doi = {10.1007/978-3-642-59319-2_10}, pages = {36 -- 38}, abstract = {Time-resolved x-ray diffraction with sub-300 fs, multi-keV x-ray pulses was used to study ultrafast lattice dynamics in laser-irradiated germanium and bismuth. In bismuth strong excitation of optical phonons is observed prior to disordering of the material.}, language = {en} } @inproceedings{SokolowskiTintenBlomeDietrichetal., author = {Sokolowski-Tinten, Klaus and Blome, Christian and Dietrich, Clemens and Blums, Juris and Horn-von Hoegen, Michael and von der Linde, D. and Cavalleri, Andrea and Squier, Jeff A. and Kammler, Martin}, title = {Structural dynamics in laser-excited solids investigated with femtosecond x-ray diffraction}, series = {2002 Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, 19-24 May 2002, Long Beach, CA, USA}, booktitle = {2002 Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, 19-24 May 2002, Long Beach, CA, USA}, publisher = {IEEE}, doi = {10.1109/QELS.2002.1031182}, pages = {115 -- 116}, abstract = {Summary form only given. Ultrashort x-ray pulses offer a unique combination of atomic-scale spatial and temporal resolution, which permits direct measurements of structural transients on an ultrafast time scale. Using time-resolved X-ray diffraction with femtosecond, multi-keV X-ray pulses we have studied transient lattice dynamics in optically excited semiconductors.}, language = {en} } @incollection{BetzLechner, author = {Betz, Michael A. and Lechner, Alfred}, title = {Sprayganik - Spraytool f{\"u}r organische Halbleiter}, series = {7. MikroSystemTechnik Kongress "MEMS, Mikroelektronik, Systeme", 23.-25. Oktober 2017, M{\"u}nchen}, booktitle = {7. MikroSystemTechnik Kongress "MEMS, Mikroelektronik, Systeme", 23.-25. Oktober 2017, M{\"u}nchen}, publisher = {VDE-Verlag}, address = {M{\"u}nchen}, isbn = {978-3-8007-4491-6}, pages = {747 -- 750}, abstract = {Spr{\"u}hbeschichtung stellt einen kosteng{\"u}nstigen und materialeffizienten aber komplexen Prozess dar. Um diese Vorteile f{\"u}r die Abscheidung teurer organischer Halbleiter zu nutzen, wurde ein Spr{\"u}hbeschichter entwickelt, der neueste Anforderungen an den Prozess erf{\"u}llt. Zudem konnten selbstansaugende Mikrospr{\"u}hd{\"u}sen mikrotechnologisch in Silizium realisiert werden, welche bereits eine bis zu vierfache Materialeffizienz im Vergleich zu herk{\"o}mmlichen airbrush-D{\"u}sen nachweisen konnten. Die neueste D{\"u}sengeneration zeigt nun eine weiter verbesserte Zerst{\"a}ubung, was bei gespr{\"u}hten OPDs zu einer reduzierten Dunkelstromdichte von 9,1×10-6 mA·cm-2 (-5 V) und erh{\"o}hten externen Quanteneffizienz von 78,5\% (530 nm, -5 V) f{\"u}hrt.}, language = {de} } @article{HanischBlicharskiJanzenKrenzeretal., author = {Hanisch-Blicharski, Anja and Janzen, A. and Krenzer, B. and Wall, S. and Klasing, F. and Kalus, A. and Frigge, Tim and Kammler, Martin and Horn-von Hoegen, Michael}, title = {Ultra-fast electron diffraction at surfaces: from nanoscale heat transport to driven phase transitions}, series = {Ultramicroscopy}, volume = {127}, journal = {Ultramicroscopy}, publisher = {Elsevier}, doi = {10.1016/j.ultramic.2012.07.017}, pages = {2 -- 8}, abstract = {Many fundamental processes of structural changes at surfaces occur on a pico- or femtosecond time scale. In order to study such ultra-fast processes, we have combined modern surface science techniques with fs-laser pulses in a pump-probe scheme. Reflection high energy electron diffraction (RHEED) with grazing incident electrons ensures surface sensitivity for the probing electron pulses. Utilizing the Debye-Waller effect, we studied the cooling of vibrational excitations in monolayer adsorbate systems or the nanoscale heat transport from an ultra-thin film through a hetero-interface on the lower ps-time scale. The relaxation dynamics of a driven phase transition far away from thermal equilibrium is demonstrated with the In-induced (8×2) reconstruction on Si(111). This surface exhibits a Peierls-like phase transition at 100K from a (8×2) ground state to (4×1) excited state. Upon excitation by a fs-laser pulse, this structural phase transition is driven into an excited (4×1) state at a sample temperature of 20K. Relaxation into the (8×2) ground state occurs after more than 150 ps.}, language = {en} } @article{CheeKammlerGrahametal., author = {Chee, See Wee and Kammler, Martin and Graham, Jeremy and Gignac, Lynne and Reuter, Mark C. and Hull, Robert and Ross, Frances M.}, title = {Directed Self-Assembly of Ge Quantum Dots Using Focused Si2+ Ion Beam Patterning}, series = {scientific reports}, volume = {8}, journal = {scientific reports}, publisher = {Nature}, doi = {10.1038/s41598-018-27512-z}, pages = {1 -- 10}, abstract = {We show that templating a Si surface with a focused beam of Si2+ or Si+ ions can create suitable nucleation sites for the subsequent growth of self-assembled Ge quantum dots by chemical vapor deposition. To determine the mechanism of patterning we use atomic force microscopy to show that, similar to Ga+ patterning, the formation of a surface pit is required to enable control over Ge quantum dot locations. We find that relatively high implantation doses are required to achieve patterning, and these doses lead to amorphization of the substrate. We assess the degree to which the substrate crystallinity can be recovered by subsequent processing. Using in situ transmission electron microscopy heating experiments we find that recrystallization is possible at the growth temperature of the Ge quantum dots, but defects remain that follow the pattern of the initial implantation. We discuss the formation mechanism of the defects and the benefits of using Si ions for patterning both defects and quantum dots on Si substrates.}, language = {en} } @article{CheeKammlerBalasubramanianetal., author = {Chee, See Wee and Kammler, Martin and Balasubramanian, Prabhu and Reuter, Mark C. and Hull, Robert and Ross, Frances M.}, title = {Microstructural changes in silicon induced by patterning with focused ion beams of Ga, Si and Au}, series = {Ultramicroscopy}, volume = {127}, journal = {Ultramicroscopy}, publisher = {Elsevier}, doi = {10.1016/j.ultramic.2012.07.004}, pages = {126 -- 131}, abstract = {We use focused beams of Ga(+), Au(+) and Si(++) ions to induce local microstructural changes in single crystal silicon. The ions were delivered as single spot pulses into thin Si membranes that could subsequently be imaged and annealed in situ in a transmission electron microscope. For each ion, the focused ion beam implantation created an array of amorphous regions in the crystalline membrane. Annealing causes solid phase epitaxial regrowth to take place, but we show that the resulting microstructure depends on the ion species. For Ga(+) and Au(+), precipitates remain after recrystallization, while for Si(++), dislocation loops form around the periphery of each implanted spot. We attribute these loops to defects formed during solid phase epitaxial regrowth, with controlled placement of the loops possible.}, language = {en} } @article{WallKrenzerWippermannetal., author = {Wall, Simone and Krenzer, Boris and Wippermann, Stefan and Sanna, Simone and Klasing, Friedrich and Hanisch-Blicharski, Anja and Kammler, Martin and Schmidt, Wolf Gero and Horn-von Hoegen, Michael}, title = {Atomistic picture of charge density wave formation at surfaces}, series = {Physical review letters}, volume = {109}, journal = {Physical review letters}, number = {18}, publisher = {APS}, doi = {10.1103/PhysRevLett.109.186101}, abstract = {We used ultrafast electron diffraction and density-functional theory calculations to gain insight into the charge density wave (CDW) formation on In/Si(111). Weak excitation by a femtosecond-laser pulse results in the melting of the CDW. The immediate freezing is hindered by a barrier for the motion of atoms during the phase transition: The melted CDW constitutes a long-lived, supercooled phase and is strong evidence for a first-order transition. The freezing into the CDW is triggered by preexisting adsorbates. Starting at these condensation nuclei, the CDW expands one dimensionally on the In/Si(111) surface, with a constant velocity of more than 80 m/s.}, language = {en} } @article{StreubuehrKalusZhouetal., author = {Streub{\"u}hr, C. and Kalus, A. and Zhou, P. and Ligges, M. and Hanisch-Blicharski, Anja and Kammler, Martin and Bovensiepen, U. and Horn-von Hoegen, Michael and von der Linde, D.}, title = {Comparing ultrafast surface and bulk heating using time-resolved electron diffraction}, series = {Applied Physics Letters}, volume = {104}, journal = {Applied Physics Letters}, publisher = {American Institute of Physics}, doi = {10.1063/1.4872055}, pages = {1 -- 3}, abstract = {From measurements of the transient Debye-Waller effect in Bismuth, we determine the buildup time of the random atomic motion resulting from the electronic relaxation after short pulse laser excitation. The surface sensitive reflection high energy electron diffraction and transmission electron diffraction yield a time constant of about 12 ps and 3 ps, respectively. The different energy transfer rates indicate relatively weak coupling between bulk and surface vibrational modes. (C) 2014 AIP Publishing LLC.}, language = {en} } @inproceedings{ZhouStreubuehrKalusetal., author = {Zhou, P. and Streub{\"u}hr, C. and Kalus, A. and Frigge, Tim and Wall, S. and Hanisch-Blicharski, Anja and Kammler, Martin and Ligges, M. and Bovensiepen, U. and von der Linde, D. and Horn-von Hoegen, Michael}, title = {Ultrafast time resolved reflection high energy electron diffraction with tilted pump pulse fronts}, series = {EPJ Web of Conferences - XVIIIth International Conference on Ultrafast Phenomena}, volume = {41}, booktitle = {EPJ Web of Conferences - XVIIIth International Conference on Ultrafast Phenomena}, publisher = {EPJ}, doi = {10.1051/epjconf/20134110016}, abstract = {We present time-resolved RHEED from a laser excited Pb(111) surface using a pulse front tilter for the compensation of the velocity mismatch of electrons and light. The laser pulses with tilted fronts were characterized by a spatially resolving cross correlator. The response of the surface upon excitation was observed to be less than 2 ps.}, language = {en} } @article{FriggeWallKrenzeretal., author = {Frigge, Tim and Wall, S. and Krenzer, B. and Wippermann, St. and Sanna, S. and Klasing, F. and Hanisch-Blicharski, Anja and Kammler, Martin and Schmidt, W. G. and Horn-von Hoegen, Michael}, title = {Abstract - A Reply to the Comment by H. Shim et al.}, series = {Physical review letters}, volume = {111}, journal = {Physical review letters}, number = {14}, publisher = {American Physical Society}, doi = {10.1103/PhysRevLett.111.149602}, language = {en} } @article{PortavoceKammlerHulletal., author = {Portavoce, A. and Kammler, Martin and Hull, R. and Reuter, M. C. and Copel, M. and Ross, Frances M.}, title = {Growth of nanostructures by locally modified surface reactivity}, series = {Materials Science in Semiconductor Processing}, volume = {12}, journal = {Materials Science in Semiconductor Processing}, number = {1-2}, publisher = {Elsevier}, doi = {10.1016/j.mssp.2009.07.001}, pages = {25 -- 30}, abstract = {The chemical vapor deposition (CVD) of Si and Ge on Si(0 0 1) substrates covered by 1 monolayer of Ga has been studied. Ga modifies surface reactivity and surface atom mobility. We show that islanding occurs during Ga-mediated CVD even in the absence of strain, allowing for the formation of islands without a wetting layer or with a thinner wetting layer. The morphology of the grown layer is highly dependent on kinetic parameters, i.e. growth temperature and growth pressure, that control Si and Ge deposition and Ga desorption. Si Ga-mediated CVD promotes the formation of self-assembled epitaxial Si islands exhibiting {1 1 3} facets. Ge islands grown by Ga-mediated CVD present reduced lateral sizes and an increased surface density compared to non Ga-mediated CVD. The growth morphology (particularly island size and density) can be understood by considering a qualitative model in which atoms are deposited only on sites whose dangling bonds are not passivated by Ga. We suggest that modification of surface reactivity during surfactant-mediated CVD can thus provide a new degree of freedom for quantum dot fabrication.}, language = {en} } @article{LuNicoulShymanovichetal., author = {Lu, Wei and Nicoul, Matthieu and Shymanovich, Uladzimir and Tarsevitch, Alexander and Kammler, Martin and Horn-von Hoegen, Michael and von der Linde, Dietrich and Sokolowski-Tinten, Klaus}, title = {Extreme Phonon Softening in Laser-excited Bismuth - Towards an Inverse Peierls-transition}, series = {MRS Online Proceedings Library}, volume = {1230}, journal = {MRS Online Proceedings Library}, publisher = {Springer}, doi = {10.1557/PROC-1230-MM03-05}, abstract = {Large amplitude coherent optical phonons have been investigated in laser-excited Bismuth by means of femtosecond time-resolved X-ray diffraction. For absorbed laser fluences above 2 mJ/cm2, the experimental data reveal an extreme softening of the excited A1g-mode down to frequencies of about 1 THz, only 1/3 of the unperturbed A1g-frequency. At even stronger excitation the measured diffraction signals no longer exhibit an oscillatory behavior presenting strong indication that upon intense laser-excitation the Peierls-distortion, which defines the equilibrium structure of Bismuth, can be transiently reversed.}, language = {en} } @inproceedings{ShymanovichNicoulLuetal., author = {Shymanovich, Uladzimir and Nicoul, M. and Lu, W. and Tarasevitch, A. and Kammler, Martin and Horn-von Hoegen, Michael and von der Linde, D. and Sokolowski-Tinten, Klaus and Phipps, Claude}, title = {Coherent acoustic and optical phonons in laser-excited solids studied by ultrafast time-resolved X-ray diffraction}, series = {AIP Conference Proceedings}, booktitle = {AIP Conference Proceedings}, number = {1}, publisher = {AIP}, doi = {10.1063/1.3507146}, pages = {558 -- 566}, abstract = {We apply ultrafast time-resolved X-ray diffraction to directly study coherent acoustic and optical phonons in laser-excited materials. In Au the ps acoustic response has been investigated with the particular goal to clarify the interplay of electronic and thermal pressure contributions. In Bi the extreme softening of the coherently excited A 1 g optical phonon presents strong indication that upon intense laser-excitation the Peierls-transition which determines the equilibrium structure of Bi can be reversed. In FeRh we studied the lattice response after a fast laser-induced anti-ferromagnetic to ferromagnetic phase transition.}, language = {en} } @article{KleinNabbefeldHattabetal., author = {Klein, C. and Nabbefeld, T. and Hattab, H. and Meyer, D. and Jnawali, G. and Kammler, Martin and Meyer zu Heringdorf, Frank-Joachim and Golla-Franz, A. and M{\"u}ller, B. H. and Schmidt, Th and Henzler, M. and Horn-von Hoegen, Michael}, title = {Lost in reciprocal space? Determination of the scattering condition in spot profile analysis low-energy electron diffraction}, series = {Review of scientific instruments}, volume = {82}, journal = {Review of scientific instruments}, number = {3}, publisher = {American Institute of Physics}, doi = {10.1063/1.3554305}, abstract = {The precise knowledge of the diffraction condition, i.e., the angle of incidence and electron energy, is crucial for the study of surface morphology through spot profile analysis low-energy electron diffraction (LEED). We demonstrate four different procedures to determine the diffraction condition: employing the distortion of the LEED pattern under large angles of incidence, the layer-by-layer growth oscillations during homoepitaxial growth, a G(S) analysis of a rough surface, and the intersection of facet rods with 3D Bragg conditions.}, language = {en} } @article{PayerKleinAcetetal., author = {Payer, T. and Klein, C. and Acet, M. and Ney, V. and Kammler, Martin and Meyer zu Heringdorf, Frank-Joachim and Horn-von Hoegen, Michael}, title = {High-quality epitaxial Bi(111) films on Si(111) by isochronal annealing}, series = {Thin Solid Films}, volume = {520}, journal = {Thin Solid Films}, number = {23}, publisher = {Elsevier}, doi = {10.1016/j.tsf.2012.06.004}, pages = {6905 -- 6908}, abstract = {Bi(111) films grown on Si(111) at room temperature show a significantly higher roughness compared to Bi films grown on Si(100) utilizing a kinetic pathway based on a low-temperature process. Isochronal annealing steps of 3 min duration each with temperatures up to 200 °C cause a relaxation of the Bi films' lattice parameter toward the Bi bulk value and yield an atomically flat Bi surface. Driving force for the relaxation and surface reordering is the magic mismatch of 11 Bi atoms to 13 Si atoms that emerges at annealing temperatures above 150 °C and reduces the remaining strain to less than 0.2\%.}, language = {en} } @article{FriggeKalusKlasingetal., author = {Frigge, Tim and Kalus, Annika and Klasing, Friedrich and Kammler, Martin and Hanisch-Blicharski, Anja and Horn-von Hoegen, Michael}, title = {Nanoscale Heat Transport in Self-Organized Ge Clusters on Si(001)}, series = {MRS Online Proceedings Library}, journal = {MRS Online Proceedings Library}, publisher = {Springer}, doi = {10.1557/opl.2013.148}, pages = {45 -- 50}, abstract = {Ultrafast time resolved transmission electron diffraction (TED) in a reflection geometry was used to study the cooling behavior of self-organized, well defined nanoscale germanium hut and dome clusters on Si(001). The clusters were heated in a pump-probe scheme by fs-laser pulses. The resulting transient temperature rise was then determined from the drop in diffraction intensity caused by the Debye-Waller effect. From a cooling time of τ=177 ps we estimated a strongly reduced heat transfer compared with homogeneous films of equivalent thickness.}, language = {en} } @inproceedings{LuNicoulShymanovichetal., author = {Lu, W. and Nicoul, M. and Shymanovich, Uladzimir and Tarasevitch, A. and Kammler, Martin and Horn-von Hoegen, Michael and von der Linde, D. and Sokolowski-Tinten, Klaus}, title = {Transient reversal of a Peierls-transition: Extreme phonon softening in laser-excited Bismuth}, series = {International Conference on Ultrafast Phenomena, Snowmass}, booktitle = {International Conference on Ultrafast Phenomena, Snowmass}, number = {ME41}, publisher = {Optica Publishing Group}, doi = {10.1364/UP.2010.ME41}, abstract = {Laser-excited coherent optical phonons in Bismuth were investigated using time-resolved X-ray diffraction. The observed extreme softening of the excited A1g-mode presents strong indication that the Peierls-distortion defining the equilibrium structure of Bismuth is transiently reversed.}, language = {en} } @article{FritzReisAdamsetal., author = {Fritz, D. M. and Reis, D. A. and Adams, B. and Akre, R. A. and Arthur, J. and Blome, Christian and Bucksbaum, P. H. and Cavalieri, A. L. and Engemann, S. and Fahy, S. and Falcone, R. W. and Fuoss, P. H. and Gaffney, K. J. and George, M. J. and Hajdu, J. and Hertlein, M. P. and Hillyard, P. B. and Horn-von Hoegen, Michael and Kammler, Martin and Kaspar, J. and Kienberger, R. and Krejcik, P. and Lee, S. H. and Lindenberg, A. M. and McFarland, B. and Meyer, D. and Montagne, T. and Murray, E. D. and Nelson, A. J. and Nicoul, M. and Pahl, R. and Rudati, J. and Schlarb, H. and Siddons, D. P. and Sokolowski-Tinten, Klaus and Tschentscher, Th and von der Linde, D. and Hastings, J. B.}, title = {Ultrafast bond softening in bismuth: mapping a solid's interatomic potential with X-rays}, series = {Science}, volume = {315}, journal = {Science}, number = {5812}, publisher = {AAAS}, doi = {10.1126/science.1135009}, pages = {633 -- 636}, abstract = {Intense femtosecond laser excitation can produce transient states of matter that would otherwise be inaccessible to laboratory investigation. At high excitation densities, the interatomic forces that bind solids and determine many of their properties can be substantially altered. Here, we present the detailed mapping of the carrier density-dependent interatomic potential of bismuth approaching a solid-solid phase transition. Our experiments combine stroboscopic techniques that use a high-brightness linear electron accelerator-based x-ray source with pulse-by-pulse timing reconstruction for femtosecond resolution, allowing quantitative characterization of the interatomic potential energy surface of the highly excited solid.}, language = {en} } @article{MoellenbeckHanischBlicharskiSchneideretal., author = {M{\"o}llenbeck, Simone and Hanisch-Blicharski, Anja and Schneider, Paul and Ligges, Manuel and Zhou, Ping and Kammler, Martin and Krenzer, Boris and Horn-von Hoegen, Michael}, title = {Ultra-fast Time-Resolved Electron Diffraction of Strongly Driven Phase Transitions on Silicon Surfaces}, series = {MRS Online Proceedings Library}, journal = {MRS Online Proceedings Library}, publisher = {Springer}, doi = {10.1557/PROC-1230-MM03-09}, abstract = {The dynamics of strongly driven phase transitions at surfaces are studied by ultra-fast time-resolved reflection high energy electron diffraction. The surfaces are excited by an intense fs-laser pulse (pump) and probed by an ultra-short electron pulse with variable time delay. The order-disorder phase transition from a c(4 {\~A}— 2) to a(2 {\~A}— 1) of the bare Si(001) surface shows a transient decrease of the intensity of the c(4 {\~A}— 2) spots which recovers on a time scale of a few hundred picoseconds indicating the excitation of the phase transition. On Si(111) a monolayer of Indium induces a (4 {\~A}— 1) reconstruction which undergoes a Peierls like phase transition to a (8 {\~A}— "2") reconstruction below 100 K. Upon laser excitation with a fluence of 3.4 mJ/cm 2 at a temperature of 72 K the phase transition was strongly driven. The (8 {\~A}— "2")-diffraction spots instantaneously disappears, while the intensity of the (4 {\~A}— 1)-spots increases. This increase of the (4 {\~A}— 1) spot intensity excludes an explanation by the Debye-Waller-Effect and is evidence for a true structural phase transition at a surface. {\^A}© 2010 Materials Research Society.}, language = {en} } @article{KrenzerHanischBlicharskiSchneideretal., author = {Krenzer, B. and Hanisch-Blicharski, Anja and Schneider, P. and Payer, Th. and M{\"o}llenbeck, S. and Osmani, O. and Kammler, Martin and Meyer, R. and Horn-von Hoegen, Michael}, title = {Phonon confinement effects in ultrathin epitaxial bismuth films on silicon studied by time-resolved electron diffraction}, series = {Physical Review B}, volume = {80}, journal = {Physical Review B}, number = {2}, publisher = {APS}, doi = {10.1103/PhysRevB.80.024307}, abstract = {The transient temperature evolution of ultrathin bismuth films, epitaxially grown on a silicon single crystal, upon femtosecond laser excitation is studied by time-resolved electron diffraction. The exponential decay of the film temperature is explained by phonon reflection at the interface, which results in a strongly reduced thermal conduction in the cross plane of the layered system. The thermal boundary conductance is found to be as low as 1273 W/(K cm2). Model calculations, including phonon confinement effects, explain the linear relationship between the observed film-temperature decay constant and the film thickness. Even for 2.5 nm thin films the phonon transmission probability across the interface is given by bulk properties. Our simulations show that phonon confinement effects are negligible for bismuth-film thicknesses larger than 1 nm.}, language = {en} } @article{PortavoceKammlerHulletal., author = {Portavoce, A. and Kammler, Martin and Hull, R. and Reuter, M. C. and Ross, Frances M.}, title = {Mechanism of the nanoscale localization of Ge quantum dot nucleation on focused ion beam templated Si(001) surfaces}, series = {Nanotechnology}, volume = {17}, journal = {Nanotechnology}, number = {17}, publisher = {IOP}, doi = {10.1088/0957-4484/17/17/028}, pages = {4451 -- 4455}, abstract = {We investigate the fundamental mechanism by which self-assembled Ge islands can be nucleated at specific sites on Si(001) using ultra-low-dose focused ion beam (FIB) pre-patterning. Island nucleation is controlled by a nanotopography that forms after the implantation of Ga ions during subsequent thermal annealing of the substrate. This nanotopography evolves during the annealing stage, changing from a nanoscale annular depression associated with each focused ion beam spot to a nanoscale pit, and eventually disappearing (planarizing). The correspondence of Ge quantum dot nucleation sites to the focused ion beam features requires a growth surface upon which the nanotopography is preserved. A further key observation is that the Ge wetting layer thickness is reduced in patterned regions, allowing the formation of islands on the templated regions without nucleation elsewhere. These results provide routes to the greatly enhanced design and control of quantum dot distributions and dimensions.}, language = {en} } @article{HanischBlicharskiKrenzerMoellenbecketal., author = {Hanisch-Blicharski, Anja and Krenzer, Boris and M{\"o}llenbeck, Simone and Ligges, Manuel and Zhou, Ping and Kammler, Martin and Horn-von Hoegen, Michael}, title = {Transient Cooling of Ultrathin Epitaxial Bi(111)-Films on Si(111) Upon Femtosecond Laser Excitation Studied by Ultrafast Reflection High Energy Electron Diffraction}, series = {MRS Online Proceedings Library}, journal = {MRS Online Proceedings Library}, publisher = {Springer}, doi = {10.1557/PROC-1172-T04-08}, pages = {1 -- 6}, abstract = {With time resolved ultrafast electron diffraction the cooling process across the interface between a thin film and the underlying substrate was studied after excitation with short laser pulses. From the exponential decay of the surface temperature evolution a thermal boundary conductance of 1430 W/(cm2K) is determined for a 9.7 nm thin Bi(111) film on Si(111). A linear dependence between laser fluence and initial temperature rise was measured for film-thicknesses between 2.5 nm and 34.5 nm. The ratio of initial temperature rise and laser fluence for different film-thicknesses is compared to a model taking multilayer optics into account. The data agree well with this model.}, language = {en} } @article{SchmidtKroegerFlegeetal., author = {Schmidt, Thomas and Kr{\"o}ger, Roland and Flege, Jan Ingo and Horn-von Hoegen, Michael and Clausen, T. and Falta, J. and Janzen, Aandreas and Zahl, P. and Kury, P. and Kammler, Martin}, title = {Less strain energy despite fewer misfit dislocations: the impact of ordering}, series = {Physical review letters}, volume = {96}, journal = {Physical review letters}, number = {6}, publisher = {APS}, doi = {10.1103/PhysRevLett.96.066101}, abstract = {The average strain state of Ge films grown on Si(111) by surfactant mediated epitaxy has been compared to the ordering of the interfacial misfit dislocation network. Surprisingly, a smaller degree of average lattice relaxation was found in films grown at higher temperature. On the other hand, these films exhibit a better ordered dislocation network. This effect energetically compensates the higher strain at higher growth temperature, leading to the conclusion that, apart from the formation of misfit dislocations, their ordering represents an important channel for lattice-strain energy relaxation.}, language = {en} } @article{KammlerChidambarraoSchwarzetal., author = {Kammler, Martin and Chidambarrao, D. and Schwarz, K. W. and Black, C. T. and Ross, Frances M.}, title = {Controlled nucleation of dislocations by a spatially localized stress field}, series = {Applied Physics Letters}, volume = {87}, journal = {Applied Physics Letters}, number = {13}, publisher = {AIP}, doi = {10.1063/1.2061862}, abstract = {We analyze the nucleation of dislocations in silicon at spatially localized stress fields generated by silicon nitride pads having a high intrinsic stress. The nucleation and final configuration of the dislocations were studied using hot-stage transmission electron microscopy and were compared with dislocation simulations based on calculations of the stress fields around the pads. We find that the simulated configurations match well with the experimental data, and we show that the dislocation configuration can be controlled by the pad size.}, language = {en} } @article{KammlerHornvonHoegen, author = {Kammler, Martin and Horn-von Hoegen, Michael}, title = {Low energy electron diffraction of epitaxial growth of bismuth on Si(111)}, series = {Surface Science}, volume = {576}, journal = {Surface Science}, number = {1-3}, publisher = {Elsevier}, doi = {10.1016/j.susc.2004.11.033}, pages = {56 -- 60}, abstract = {The epitaxial growth of Bi on Si(1 1 1) studied by spot profile analyzing low energy electron diffraction shows for low coverage rotationally disordered Bi cluster with preferred orientations following the threefold symmetry of the Si substrate. With further deposition the Bi cluster coalesces and the surface orientation changes from the pseudo cubic Bi(1 1 0) surface orientation of the Bi cluster into the hexagonal Bi(1 1 1) surface of the resulting Bi film.}, language = {en} } @article{SokolowskiTintenBlomeBlumsetal., author = {Sokolowski-Tinten, Klaus and Blome, Christian and Blums, Juris and Cavalleri, Andrea and Dietrich, Clemens and Tarasevitch, Alexander and Uschmann, Ingo and F{\"o}rster, Eckhard and Kammler, Martin and Horn-von Hoegen, Michael and von der Linde, Dietrich}, title = {Femtosecond X-ray measurement of coherent lattice vibrations near the Lindemann stability limit}, series = {Nature}, volume = {422}, journal = {Nature}, number = {6929}, publisher = {Springer}, doi = {10.1038/nature01490}, pages = {287 -- 289}, abstract = {The study of phase-transition dynamics in solids beyond a time-averaged kinetic description requires direct measurement of the changes in the atomic configuration along the physical pathways leading to the new phase. The timescale of interest is in the range 10(-14) to 10(-12) s. Until recently, only optical techniques were capable of providing adequate time resolution, albeit with indirect sensitivity to structural arrangement. Ultrafast laser-induced changes of long-range order have recently been directly established for some materials using time-resolved X-ray diffraction. However, the measurement of the atomic displacements within the unit cell, as well as their relationship with the stability limit of a structural phase, has to date remained obscure. Here we report time-resolved X-ray diffraction measurements of the coherent atomic displacement of the lattice atoms in photoexcited bismuth close to a phase transition. Excitation of large-amplitude coherent optical phonons gives rise to a periodic modulation of the X-ray diffraction efficiency. Stronger excitation corresponding to atomic displacements exceeding 10 per cent of the nearest-neighbour distance-near the Lindemann limit-leads to a subsequent loss of long-range order, which is most probably due to melting of the material.}, language = {en} } @article{SchmidtKroegerClausenetal., author = {Schmidt, Th. and Kr{\"o}ger, R. and Clausen, T. and Falta, J. and Janzen, A. and Kammler, Martin and Kury, P. and Zahl, P. and Horn-von Hoegen, Michael}, title = {Surfactant-mediated epitaxy of Ge on Si(111): Beyond the surface}, series = {Applied Physics Letters}, volume = {86}, journal = {Applied Physics Letters}, number = {11}, publisher = {AIP}, doi = {10.1063/1.1882760}, abstract = {For a characterization of interface and "bulk" properties of Ge films grown on Si(111) by Sb surfactant-mediated epitaxy, grazing incidence x-ray diffraction and transmission electron microscopy have been used. The interface roughness, defect structure, and strain state have been investigated in dependence of film thickness and growth temperature. For all growth parameters, atomically smooth interfaces are observed. For thin Ge layers, about 75\% of the strain induced by the lattice mismatch is relaxed by misfit dislocations at the Ge/Si interface. Only a slight increase of the degree of relaxation is found for thicker films. At growth temperatures below about 600 °C, the formation of twins is observed, which can be avoided at higher temperatures.}, language = {en} } @article{RossKammlerReuteretal., author = {Ross, Frances M. and Kammler, Martin and Reuter, M. C. and Hull, R.}, title = {In-situ observations of self-assembled island nucleation on patterned substrates}, series = {Philosophical Magazine}, volume = {84}, journal = {Philosophical Magazine}, number = {25-26}, publisher = {Taylor \& Francis}, doi = {10.1080/14786430410001671430}, pages = {2687 -- 2702}, abstract = {We compare in-situ electron microscopy observations of Ge island growth on Si surfaces modulated by different techniques. Si(001) substrates were patterned either using a focused Ga ion beam or lithographically to produce similar feature sizes. In the case of the focused-ion-beam patterned substrates, chemical or strain effects caused by low Ga doses control the positions at which islands nucleate. Nucleation on topographically modulated substrates, with the pattern produced either by high-dose sputtering or lithographically, is controlled by the nature of the side walls of topographic features. The two patterning approaches have different benefits in creating arrays of islands for device applications.}, language = {en} } @article{SokolowskiTintenBlomeBlumsetal., author = {Sokolowski-Tinten, Klaus and Blome, Christian and Blums, Juris and Dietrich, Clemens and Tarsevitch, Alexander and Horn-von Hoegen, Michael and von der Linde, Dietrich and Cavalleri, Andrea and Kammler, Martin and Uschmann, Ingo and Foerster, Eckhart}, title = {Femtosecond X-ray Diffraction Study of Large Amplitude Coherent Optical Phonons in Laser-Excited Bismuth}, series = {Conference on Lasers and Electro-Optics, 1-6 June 2003, Baltimore, Maryland}, journal = {Conference on Lasers and Electro-Optics, 1-6 June 2003, Baltimore, Maryland}, publisher = {Optical Society of America}, abstract = {Femtosecond time-resolved X-ray diffraction was used to directly study optical phonons in laser-excited Bismuth. A periodic modulation of the diffraction efficiency reveals initially coherent lattice distortions with atomic displacements of nearly 10\% of the nearest- neighbor-distance.}, language = {en} } @article{AlFalouKammlerHornvonHoegen, author = {Al-Falou, A. A. and Kammler, Martin and Horn-von Hoegen, Michael}, title = {Strain state analysis of hetero-epitaxial systems}, series = {Europhysics Letters}, volume = {69}, journal = {Europhysics Letters}, number = {4}, publisher = {IOP}, doi = {10.1209/epl/i2004-10399-6}, pages = {570 -- 576}, abstract = {We present a new method to analyze the strain state of epitaxial hetero structures by high-resolution spot profile analysis low-energy electron diffraction. From the variation of the spot profiles with the vertical scattering vector we determine the hetero film roughness, the change of interlayer spacing due to tetragonal distortion, and the variation of the interlayer distance due to partial relaxation of the strained rough film. The practical implementation of this method is simple and can be used to determine the onset of strain-relieving defects during the growth process.}, language = {en} } @article{MenzelConradTringidesetal., author = {Menzel, A. and Conrad, E. H. and Tringides, Michael C. and Kammler, Martin and Horn- von Hoegen, Michael}, title = {Finite collection time effects in autocovariance function measurements}, series = {Journal of Applied Physics}, volume = {93}, journal = {Journal of Applied Physics}, number = {4}, publisher = {AIP Publishing}, doi = {10.1063/1.1537466}, pages = {2229 -- 2235}, abstract = {In this paper we discuss how finite data sets influence experimental measurements of the autocovariance function. Autocovariance estimators are biased, meaning that the expectation value for any measured autocovariance function is not identical to the actual autocovariance function. In this work we show that the measured autocovariance function for a finite length time series must become negative for some lag times. We derive analytic corrections to these finite time errors for different types of correlated random sequences. Our results explain the apparent anticorrelated noise observed in experimental observations.}, language = {en} } @article{KammlerHornvonHoegen, author = {Kammler, Martin and Horn-von Hoegen, Michael}, title = {Transition in growth mode by competing strain relaxation mechanisms}, series = {Applied Physics Letters}, volume = {85}, journal = {Applied Physics Letters}, number = {15}, publisher = {American Institute of Physics}, doi = {10.1063/1.1803914}, pages = {3056 -- 3058}, abstract = {Surfactant mediated epitaxy of Si(1-x)Gex alloys on Si(111) can, besides technological importance, clarify the influence of the lattice mismatch during surfactant mediated heteroepitaxial growth. For low Ge concentration we find an immediate layer-by-layer growth, whereas at high Ge concentration a roughening transition followed by relaxation of the lattice mismatch in a periodic dislocation network is preferred. This behavior can be explained by comparing the dislocation nucleation rate on a smooth surface with the island nucleation rate on a pseudomorphic film.}, language = {en} } @article{HullGrayKammleretal., author = {Hull, R. and Gray, J. L. and Kammler, Martin and Vandervelde, T. and Kobayashi, T. and Kumar, P. and Pernell, T. and Bean, J. C. and Floro, J. A. and Ross, Frances M.}, title = {Precision placement of heteroepitaxial semiconductor quantum dots}, series = {Materials Science and Engineering: B}, volume = {101}, journal = {Materials Science and Engineering: B}, number = {1-3}, publisher = {Elsevier}, doi = {10.1016/S0921-5107(02)00680-3}, pages = {1 -- 8}, abstract = {We describe two new approaches to the patterning of Si(1 0 0) surfaces for controlled nucleation of heteroepitaxial Ge semiconductor clusters. In the first method, a Ga ' -focused ion beam in situ to the growth chamber is used to create local regions of enhanced Ga ' concentration and surface topography. It is shown that at low ion doses ({\^A}/10 14 cm (2), implanted Ga causes local nucleation of Ge clusters upon the implanted region. At higher doses (]/10 15 cm (2), a complex surface topography localizes nucleation of Ge clusters. This approach can be used to seed complex patterns of Ge clusters with diameters of tens of nanometers and positional accuracy of sub-100 nm. The second method employs self-assembly of complex strain-stabilized ''quantum quadruplet'' and ''quantum fortress'' structures, whereby cooperative island nucleation around shallow strain-relieving pits is identified during Ge x Si 1(x /Si(1 0 0) heteroepitaxy. These configurations are kinetically limited structures that exist over a range of compositions, growth temperatures, and growth rates, but which are destabilized by strain relaxation (e.g. by the introduction of misfit dislocations) and by growth conditions which provide high adatom surface mobilities. Both methods have broad potential application to nanoelectronic device architectures. 2003 Elsevier Science B.V. All rights reserved.}, language = {en} } @article{HildSeifertKammleretal., author = {Hild, R. and Seifert, C. and Kammler, Martin and Meyer zu Heringdorf, Frank-Joachim and Horn-von Hoegen, Michael and Zhachuk, R.A and Olshanetsky, B.Z}, title = {Kinetics of Au induced faceting of vicinal Si(111)}, series = {Surface Science}, volume = {512}, journal = {Surface Science}, number = {1-2}, publisher = {Elsevier}, doi = {10.1016/S0039-6028(02)01666-7}, pages = {117 -- 127}, abstract = {Au induced faceting of vicinal Si(1 1 1) has been studied during adsorption at elevated temperature by spot profile analyzing of low energy electron diffraction and after quenching to room temperature by scanning tunneling microscopy. On the surfaces inclined towards five different types of facets form with increasing Au coverage at adsorption temperatures Tads below 800 °C. They are (4 4 3), (7 7 5), (5 5 3), a stepped (2 2 1), and the (3 3 1) facets. Atomic models for the (5 5 3) and (7 7 5) facet planes are proposed on the basis of high resolution STM images. At C we found the formation of an ordered step train which covers the entire surface. With further increasing Au coverage the stepped surface decomposes again into (1 1 1) terraces and step bunches. Driving force is the formation of the Si(1 1 1)-(5×2)-Au reconstruction.}, language = {en} } @article{MenzelKammlerConradetal., author = {Menzel, A. and Kammler, Martin and Conrad, E. H. and Yeh, V. and Hupalo, M. and Tringides, Michael C.}, title = {Kinetics measurements of Pb island growth on Si(111)}, series = {Physical Review B}, volume = {67}, journal = {Physical Review B}, number = {16}, publisher = {American Physical Society}, doi = {10.1103/PhysRevB.67.165314}, abstract = {We present the results of kinetics experiments on quantum-size-effects (QSE) Pb islands formed on Si(111). We have looked at the evolution of seven-layer Pb islands from five-layer Pb islands due to the transport of Pb atoms from the interisland region, overcoming a barrier at the island edges, and moving to the island tops. By analyzing low-energy electron-diffraction and scanning-tunneling microscopy data, we have estimated the barrier for layer formation in this system to be ∼0.32eV. This energy is much larger than that expected from QSE electronic contributions alone.}, language = {en} } @article{KammlerHornvonHoegenVossetal., author = {Kammler, Martin and Horn- von Hoegen, Michael and Voss, N. and Tringides, Michael C. and Menzel, A. and Conrad, E. H.}, title = {Si(001) step dynamics: A temporal low-energy electron diffraction study}, series = {Physical Review B}, volume = {65}, journal = {Physical Review B}, number = {7}, publisher = {APS}, doi = {10.1103/PhysRevB.65.075312}, abstract = {We present equilibrium measurements of the dynamics of steps on Si(001) using temporal electron-diffraction spectroscopy. Activation energies and the rate limiting kinetics are identified for 950K<~T<~1130K. Unlike previous studies at higher temperatures, we can exclude evaporation and condensation of atoms or dimers from the step edges as the rate limiting process in this temperature regime. The possible reason for this difference is discussed in terms of a crossover from different rate-limiting kinetics.}, language = {en} } @article{KammlerHullReuteretal., author = {Kammler, Martin and Hull, R. and Reuter, M. C. and Ross, Frances M.}, title = {Lateral control of self-assembled island nucleation by focused-ion-beam micropatterning}, series = {Applied Physics Letters}, volume = {82}, journal = {Applied Physics Letters}, number = {7}, doi = {10.1063/1.1542680}, pages = {1093 -- 1095}, abstract = {We demonstrate that the nucleation sites of nanoscale, self-assembled Ge islands on Si(001) can be controlled by patterning the Si surface in situ with a focused ion beam. At low doses of 6000 Ga+ ions per <100 nm spot, the selective growth is achieved without modifying the initial surface topography. At larger doses, topographic effects produced by sputtering and redeposition control the selective nucleation sites. Islands grown on irradiated spots are smaller with higher aspect ratio than islands grown on clean Si(001), suggesting a strong surfactant effect of Ga.}, language = {en} } @article{KammlerHullPortavoceetal., author = {Kammler, Martin and Hull, R. and Portavoce, A. and Reuter, M. C. and Ross, Frances M.}, title = {In-Situ Focused Ion Beam Micropatterning of Ge Islands}, series = {Microscopy and Microanalysis}, volume = {9}, journal = {Microscopy and Microanalysis}, number = {S02}, publisher = {Microscopy Society of America}, doi = {10.1017/S1431927603441214}, pages = {132 -- 134}, language = {en} } @article{SokolowskiTintenHornvonHoegenvonderLindeetal., author = {Sokolowski-Tinten, Klaus and Horn-von Hoegen, Michael and von der Linde, D. and Cavalleri, Andrea and Siders, C. W. and Brown, F. L. H. and T{\´o}th, Csaba and Squier, Jeff A. and Barty, C. P. J. and Wilson, K. R. and Kammler, Martin}, title = {Time-resolved x-ray diffraction study of ultrafast acoustic phonon dynamics in Ge/Si-heterostructures}, series = {International Conference on Ultrafast Phenomena , 9 July 2000, Charleston}, journal = {International Conference on Ultrafast Phenomena , 9 July 2000, Charleston}, publisher = {Optica}, abstract = {Using time-resolved x-ray diffraction the ultafast strain dynamics in fs-laserexcited Ge/Si-heterostructures has been studied. A fluence dependent, anharmonic damping of the impulsively generated acoustic phonons and vibrational transport across the buried Ge/Si-interface are observed.}, language = {en} } @inproceedings{KammlerHornvonHoegenVossetal., author = {Kammler, Martin and Horn- von Hoegen, Michael and Voss, N. and Tringides, Michael C. and Menzel, A. and Conrad, E. H.}, title = {Surface Dynamics of Stepped Si(001) Studied by Temporal Leed Spectroscopy}, series = {Collective Diffusion on Surfaces: Correlation Effects and Adatom Interactions (NATO Science Series II: Mathematics, Physics and Chemistry}, volume = {29}, booktitle = {Collective Diffusion on Surfaces: Correlation Effects and Adatom Interactions (NATO Science Series II: Mathematics, Physics and Chemistry}, publisher = {Springer}, doi = {10.1007/978-94-010-0816-7_3}, pages = {23 -- 32}, abstract = {We present the first demonstration of Temporal LEED Spectroscopy's ability to measure surface dynamics as shown by a study of step dynamics on vicinal Si(001). While we measure activation energies consistent with other work, the observed microscopic mechanism driving the fluctuations is inconsistent with previous claims. We exclude evaporation/condensation of atoms from the steps as the rate limiting kinetics in the temperature range of this experiment. Possible reasons for these differences are discussed.}, language = {en} } @unpublished{SidersCavalleriTothetal., author = {Siders, Craig and Cavalleri, Andrea and Toth, Csaba and Squier Jeff A., and Barty, C. P. J. and Wilson, K. R. and Sokolowski-Tinten, Klaus and von der Linde, Dietrich and Kammler, Martin and Horn- von Hoegen, Michael}, title = {Ultrafast Nonthermal Melting of Femtosecond-laser-irradiated Germanium Measured by Ultrafast X-ray Diffraction}, abstract = {Many fundamental processes in nature, such as chemical reactions and phase transitions involve rearrangement of the constituent atoms. Such changes cannot be directly measured with visible light and occur transiently on time-scales comparable with the natural oscillation periods of atoms (femtoseconds to picoseconds). We present experiments on Ge-111 films irradiated with 100-fs 800-nm light pulses and probed by a time-delayed sub-ps x-ray pulse at 8 keV. After excitation of a dense electron-hole plasma within the 160-nm film, the ultrafast pathway of lattice disordering is measured as a function laser fluence. For close-to-threshold irradiation, inhomogeneous thermal melting, occurring via surface nucleation of the liquid phase and growth into the bulk determines the dynamics of the solid-to-liquid phase transition. For excitation at about twice the melting threshold, a nonthermal pathway, starting from a highly excited cold solid and relaxing into a hot liquid causes ultrafast melting. At long time delays, nearly perfect recrystallization of a (111) crystal is observed.}, language = {en} } @unpublished{CavalleriSidersTothetal., author = {Cavalleri, Andrea and Siders, Craig and Toth, Csaba and Squier, Jeff A. and Barty, C. P. J. and Wilson, K. R. and Sokolowski-Tinten, Klaus and von der Linde, Dietrich and Kammler, Martin and Horn- von Hoegen, Michael}, title = {Measurement of harmonic and anharmonic semi-conductor-lattice dynamics with ultrafast x-ray diffraction}, abstract = {Many fundamental processes in solids, such as heat transport and phase transitions involve atomic movement on ultrafast time-scales, but cannot be directly measured with visible light. Using ultrafast x-ray diffraction, atomic motion can be measured on its natural time-scale. Photo-excitation of bulk and layered semiconductors was achieved with 800-nm wavelength femtosecond laser pulses. Optical excitation triggers a chain of relaxation processes, causing rapid lattice heating, generation and propagation of stress/strain waves into the bulk and eventual anharmonic decay of coherent acoustic phonons into the thermal bath of the solid. While the first steps of carrier relaxation, excitation and decay of Raman-active optical phonons have been in the past characterized optically at surfaces, the bulk acoustic dynamics at longer times has not. We measure length scales of lattice excitation, thereby detecting ultrafast heat diffusion via fast electrons, coherent acoustic pulse propagation into the bulk or across buried interfaces and anharmonic damping of non-equilibrium acoustic phonons. The measurement is performed with sensitivity on lattice spacing of 10 femtometers (i.e., 3 nuclear diameters).}, language = {en} } @unpublished{MenzelYehKammleretal., author = {Menzel, Andreas and Yeh, Wang-Chi Vincent and Kammler, Martin and Hupalo, Myron and Conrad, E. H. and Tringides, Michael C.}, title = {Measurements of the kinetic barriers controlling the formation of the uniform height islands in Pb/Si(111)}, abstract = {As demonstrated with SPA-LEED and STM uniform height islands of preferred thickness form during the growth of Pb on Si(111). The islands form at temperatures T<250K and for fluxes F 1/60ML/sec which requires fast kinetics and balance between several atomic processes: diffusion towards the islands , diffusion to higher layers and preference for the atoms to remain on top of the preferred height islands. We have carried out SPA-LEED experiments to measure the barriers of the processes: we prepare an initial predominantly 5-step island height distribution and we deposit an additional 0.5ML Pb at different growth temperatures Tg to determine the transition to the next preferred height of 7-step islands (i.e. 2-step islands on top of the 5-step islands) with Spot Profile Analysis(SPA-LEED). We observe that 7-step island formation is possible above a minimum temperature Tg*=175K which indicates that the transfer of atoms from the surrounding region to the top of the islands is the main controlling process.}, language = {en} } @unpublished{TringidesConradMenzeletal.2002, author = {Tringides, Michael C. and Conrad, E. H. and Menzel, Andreas and Voss, Neil R. and Kammler, Martin and Horn-von Hoegen, Michael}, title = {Dynamics of atomic steps on Si(001) studied by temporal LEED spectroscopy [Poster]}, year = {2002}, abstract = {While surface kinetics measurements for single atom diffusion have proliferated, little work exists attempting to measure surface dynamics under equilibrium conditions. We will present our recent work on developing Temporal LEED Spectroscopy (TLS) as a dynamic probe of surfaces capable of kinetics measurements at both high temperatures and surface coverages. By tuning the diffraction to specific structural entities such as steps, islands, etc., and monitoring the diffracted signal as a function of time, dynamics information about these structures can be obtained. As an example we will present TLS results for the dynamics of step fluctuations on Si(001) [1]. We have measured activation energies and identified step-edge diffusion as the rate limiting process for 950K < T < 1130K. Although this result is in apparent disagreement with earlier work, a careful analysis, considering crossover temperatures between different microscopic processes, can reconcile the differences. 1. M. Kammler, et al., Phys. Rev. B (in press).}, language = {en} } @article{HornvonHoegenMeyerzuHeringdorfKammleretal., author = {Horn-von Hoegen, Michael and Meyer zu Heringdorf, Frank-Joachim and Kammler, Martin and Schaeffer, C. and Reinking, D. and Hofmann, K. R.}, title = {Bi surfactant mediated epitaxy of Ge on Si(111)}, series = {Thin Solid Films}, volume = {343-344}, journal = {Thin Solid Films}, publisher = {Elsevier}, doi = {10.1016/S0040-6090(98)01659-9}, pages = {579 -- 582}, abstract = {We have tested Bi for the surfactant mediated epitaxy of Ge on Si(111). Islanding of Ge is prevented and a 2D layer growth of smooth and continuous Ge films is observed. The lattice mismatch is accommodated by a periodic array of dislocations confined to the Si/Ge interface. The large covalent radius of Bi reduces the binding energy, allowing Very efficient segregation and low doping levels even at low growth temperatures. Unfortunately, this results also in a high Bi desorption flux limiting the possible growth temperatures below 600 degrees C. Consequently the Ge films show a high defect density in the order of 10(8) cm(-2) for stacking faults and 10(9) cm(-2) for dislocations which limit electron Hall mobility to values below 700 cm(2)/V s at room temperature.}, language = {en} } @article{ReinkingKammlerHoffmannetal., author = {Reinking, D. and Kammler, Martin and Hoffmann, N. and Horn-von Hoegen, Michael and Hofmann, K. R.}, title = {Fabrication of high-mobility Ge p-channel MOSFETs on Si substrates}, series = {Electronics Letters}, volume = {35}, journal = {Electronics Letters}, number = {6}, publisher = {IET}, doi = {10.1049/el:19990349}, pages = {503 -- 504}, abstract = {The first fabrication of Ge p-channel MOSFETs (p-MOSFETs) on Si substrates is reported. A CMOS compatible process based on relaxed Ge layers grown on Si(111) substrates by surfactant mediated epitaxy (SME) was used. The non-optimised low temperature process yielded normally-off Ge p-MOSFETs with record channel drift mobilities of 430 cm2/Vs}, language = {en} } @article{CheeKammlerGrahametal., author = {Chee, See Wee and Kammler, Martin and Graham, Jeremy and Ross, F. and Hull, R.}, title = {Direct Imaging of Microstructural Changes in Si Induced by FIB-Patterning with Si ++ and Ga + Ions}, series = {Microscopy and Microanalysis}, volume = {17}, journal = {Microscopy and Microanalysis}, number = {S2}, publisher = {Cambridge University Press}, doi = {10.1017/S1431927611004156}, pages = {656 -- 657}, language = {en} } @inproceedings{BlahnikovaMuellerWaasetal., author = {Blahn{\´i}kov{\´a}, Barbora and M{\"u}ller, D. and Waas, M. and Lechner, Alfred}, title = {Multilyzer - microfluidic online measuring system for the analysis of environmentally relevant substances}, series = {AMA Conferences 2017 : Proceedings : SENSOR 2017 / N{\"u}rnberg 2017-05-30 - 2017-06-01}, booktitle = {AMA Conferences 2017 : Proceedings : SENSOR 2017 / N{\"u}rnberg 2017-05-30 - 2017-06-01}, publisher = {AMA Service GmbH}, address = {Wunstorf}, isbn = {978-3-9816876-4-4}, doi = {10.5162/sensor2017/P5.2}, pages = {696 -- 699}, language = {en} } @inproceedings{MelekhovAbbLechneretal., author = {Melekhov, Evgeny and Abb, Valerius and Lechner, Alfred and Kammler, Martin}, title = {Development of a glass-fiber-based spectrometer for the determination of drug residues in groundwater}, series = {Tagungsband 2. Symposium Elektronik und Systemintegration ESI 2020 "Intelligente Systeme und ihre Komponenten: Forschung und industrielle Anwendung"}, booktitle = {Tagungsband 2. Symposium Elektronik und Systemintegration ESI 2020 "Intelligente Systeme und ihre Komponenten: Forschung und industrielle Anwendung"}, editor = {Ivanov, Artem and Bicker, Marc and Patzelt, Peter}, isbn = {978-3-9818439-4-1}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:860-opus4-2174}, pages = {101 -- 109}, abstract = {Within the scope of this project, a portable measuring device has been developed which enables a cost-effective analysis of organic substances from ppm to sub-ppm range, such as drug residues in groundwater. The measurement is carried out by means of a surface-enhanced Raman scattering effect (SERS effect) and an exchangeable sensor head. The sensor head used is a nanostructured optical glass fiber glued into a fiber cannula. The tip of the fiber has been processed to act as a SERS cell. The fiber cannula is connected to a freely movable patch cable by using an adapter. Para-thiocresol is used to characterize the SERS cells.}, language = {en} } @article{BetzBuecheleBruennleretal., author = {Betz, Michael A. and B{\"u}chele, Patric and Br{\"u}nnler, Manfred and Deml, Sonja and Lechner, Alfred}, title = {Silicon micro venturi nozzles for cost-efficient spray coating of thin organic P3HT/PCBM layers}, series = {Journal of micromechanics and microengineering}, volume = {27}, journal = {Journal of micromechanics and microengineering}, number = {1}, publisher = {IOP Publishing}, doi = {10.1088/0960-1317/27/1/015019}, abstract = {Improvements on spray coating are of particular interest to different fields of technology as it is a scalable deposition method and processing from solutions offer various application possibilities outside of typical facilities. When it comes to the deposition of expensive and film-forming media such as organic semiconductors, consumption and nozzle cleaning issues are of particular importance. We demonstrate the simple steps to design and fabricate micro venturi nozzles for economical spray coating with a consumption as low as 30-50 mu l.min(-1). For spray coating an active area of 25 cm(2) a 2.45-4.01 fold coating efficiency is observed compared to a conventional airbrush nozzle set. The electrical characterization of first diodes sprayed with an active layer thickness of similar to 750 nm using a single micronozzle at a coating speed of 1.7 cm(2).min(-1) reveals a good external quantum efficiency of 72.9\% at 532 nm and a dark current of similar to 7.4.10(-5) mA.cm(-2), both measured at -2 V. Furthermore, the high resistance of the micronozzles against solvents and most acids is provided through realization in a silicon wafer with silicon dioxide encapsulation, therefore allowing easy and effective cleaning.}, language = {en} }