@article{SchelsHerdlHausladenetal., author = {Schels, Andreas and Herdl, Florian and Hausladen, Matthias and Wohlfartsst{\"a}tter, Dominik and Edler, Simon and Bachmann, Michael and Pahlke, Andreas and Schreiner, Rupert and Hansch, Walter}, title = {Quantitative Field Emission Imaging for Studying the Doping-Dependent Emission Behavior of Silicon Field Emitter Arrays}, series = {Micromachines}, volume = {14}, journal = {Micromachines}, number = {11}, publisher = {MDPI}, doi = {10.3390/mi14112008}, abstract = {Field emitter arrays (FEAs) are a promising component for novel vacuum micro- and nanoelectronic devices, such as microwave power amplifiers or fast-switching X-ray sources. However, the interrelated mechanisms responsible for FEA degradation and failure are not fully understood. Therefore, we present a measurement method for quantitative observation of individual emission sites during integral operation using a low-cost, commercially available CMOS imaging sensor. The emission and degradation behavior of three differently doped FEAs is investigated in current-regulated operation. The measurements reveal that the limited current of the p-doped emitters leads to an activation of up to 55\% of the individual tips in the array, while the activation of the n-type FEA stopped at around 30\%. This enhanced activation results in a more continuous and uniform current distribution for the p-type FEA. An analysis of the individual emitter characteristics before and after a constant current measurement provides novel perspectives on degradation behavior. A burn-in process that trims the emitting tips to an integral current-specific ideal field enhancement factor is observed. In this process, blunt tips are sharpened while sharp tips are dulled, resulting in homogenization within the FEA. The methodology is described in detail, making it easily adaptable for other groups to apply in the further development of promising FEAs.}, language = {en} } @inproceedings{SchelsHerdlHausladenetal., author = {Schels, Andreas and Herdl, Florian and Hausladen, Matthias and Wohlfartsst{\"a}tter, Dominik and Bachmann, Michael and Edler, Simon and D{\"u}sberg, Felix and Pahlke, Andreas and Buchner, Philipp and Schreiner, Rupert and Hansch, Walter}, title = {Beta Factor Mapping of Individual Emitting Tips During Integral Operation of Field Emission Arrays}, series = {2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA}, booktitle = {2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA}, publisher = {IEEE}, isbn = {979-8-3503-0143-4}, doi = {10.1109/IVNC57695.2023.10188957}, pages = {224 -- 226}, abstract = {Emission uniformity mappings of field emitter arrays provide important insight into degradation mechanisms, but are often laborious, non-integral, costly, or not quantifiable. Here, a low-cost Raspberry Pi HQ camera is used as an extraction anode to quantify the emission distribution in field emitter arrays. A verification measurement using controlled SEM electron beams proves, that current-voltage characteristics of individual emission sites can be determined by combining the integral electrical data with the image data. The characteristics are used to quantify the field enhancement factors of an 30x30 silicon field emitter array during integral operation. Comparison of the field enhancement factor distributions before and after a one-hour constant current operation at 1 µA shows an increase from 50 actively emitting tips before to 156 after the measurement. It is shown, that the distribution of field enhancement factors shifts towards lower values, due to the increasing degradation for high field enhancement tips, especially above 1500.}, language = {en} } @inproceedings{HerdlKueddelsmannSchelsetal., author = {Herdl, Florian and Kueddelsmann, Maximillian J. and Schels, Andreas and Bachmann, Michael and Edler, Simon and Wohlfartsst{\"a}tter, Dominik and D{\"u}sberg, Felix and Prugger, Alexander and Dillig, Michael and Dams, Florian and Schreiner, Rupert and Coile{\´a}in, Cormac {\´O}. and Zimmermann, Stefan and Pahlke, Andreas and Duesberg, Georg S.}, title = {Characterization and Operation of Graphene-Oxide-Semiconductor Emitters at Atmospheric Pressure Levels}, series = {2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA}, booktitle = {2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA}, publisher = {IEEE}, isbn = {979-8-3503-0143-4}, doi = {10.1109/IVNC57695.2023.10188974}, pages = {14 -- 16}, abstract = {In recent years Graphene-Oxide-Semiconductor (GOS) electron emitters have attracted a lot of interest due to their outstanding durability in modest vacuum conditions. However, the performance at ambient pressure remains largely unexplored. In this study GOS-emitters are characterized in nitrogen and air at atmospheric pressure, and compared with their vacuum characteristics. For this purpose, lifetime and IV-characteristics measurements are shown. Furthermore, the GOS-emitter was operated as an ionization source for ion mobility spectrometry (IMS) at ambient conditions.}, language = {en} } @inproceedings{HausladenBuchnerSchelsetal., author = {Hausladen, Matthias and Buchner, Philipp and Schels, Andreas and Edler, Simon and Bachmann, Michael and Schreiner, Rupert}, title = {An Integrated Field Emission Electron Source on a Chip Fabricated by Laser-Micromachining and Mems Technology}, series = {2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA}, booktitle = {2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA}, publisher = {IEEE}, isbn = {979-8-3503-0143-4}, doi = {10.1109/IVNC57695.2023.10189001}, pages = {115 -- 116}, abstract = {A silicon field emission electron source consisting of a cathode and a grid electrode has been fabricated by laser micromachining. The cathode features 21×21 tips on an area of 4×4 mm 2 , With a self-aligning MEMS technology for the aperture grid, a high electron transmission (99 \%) was achieved. Onset voltages of 50…70 V were observed for an emission current of 1 nA. A stable emission current of 1 mA ± 1.3 \% at an extraction voltage of 250 V was observed during a 30-min operation.}, language = {en} } @inproceedings{BuchnerHausladenSchelsetal., author = {Buchner, Philipp and Hausladen, Matthias and Schels, Andreas and Herdl, Florian and Edler, Simon and Bachmann, Michael and Schreiner, Rupert}, title = {An Integrated Silicon Nanowire Field Emission Electron Source on a Chip with High Electron Transmission}, series = {2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA}, booktitle = {2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA}, publisher = {IEEE}, isbn = {979-8-3503-0143-4}, doi = {10.1109/IVNC57695.2023.10188878}, pages = {6 -- 8}, abstract = {Silicon nanowire field emission arrays (50 × 50 pillars) were fabricated on a silicon glass hybrid wafer. The glass acts both as the support for the whole structure and insulator between cathode and extraction grid. The extraction grid matches the emitter structures and is optically aligned and adhered to the emitter chip by a vacuum compatible epoxide adhesive. These chips exhibit an emission current of about 600 μA at an extraction voltage of 300 V. The electron transmission through the grid is above 80 \%. 58-hour longtime measurements were conducted showing low degradation of the emission current and high stability of electron transmission.}, language = {en} } @inproceedings{HausladenSchelsBuchneretal., author = {Hausladen, Matthias and Schels, Andreas and Buchner, Philipp and Bartl, Mathias and Asgharzade, Ali and Edler, Simon and Wohlfartsst{\"a}tter, Dominik and Bachmann, Michael and Schreiner, Rupert}, title = {Improved Method for Determining the Distribution of FEA Currents by Optical CMOS Sensors}, series = {37th International Vacuum Nanoelectronics Conference (IVNC), 15-19 July 2024, Brno, Czech Republic}, booktitle = {37th International Vacuum Nanoelectronics Conference (IVNC), 15-19 July 2024, Brno, Czech Republic}, publisher = {IEEE}, doi = {10.1109/IVNC63480.2024.10652543}, pages = {1 -- 2}, abstract = {CMOS image sensors are utilized to determine the time- and spatially-resolved distribution of the electron emission of silicon field emission arrays. During initial experiments, rather low field emission currents already visibly damaged the sensor surface, altering the system accuracy over the measurement time. Therefore, we coated the sensor surface with copper for protection. In contrast to the original insulating surface, the Cu coating provides a conductive surface for incident electrons and improves heat dissipation in addition. This prevents localized surface charges and surface damages which stabilize the system accuracy.}, language = {en} } @article{BachmannDuesbergPahlkeetal., author = {Bachmann, Michael and D{\"u}sberg, Felix and Pahlke, Andreas and Edler, Simon and Schels, Andreas and Herdl, Florian and Hausladen, Matthias and Buchner, Philipp and Schreiner, Rupert}, title = {The "LED-version" of the electron gun: An electron source for operation in ambient pressure environments based on silicon field emitter arrays}, series = {Vakuum in Forschung und Praxis}, volume = {35}, journal = {Vakuum in Forschung und Praxis}, number = {3}, publisher = {Wiley}, doi = {10.1002/vipr.202300801}, pages = {32 -- 37}, abstract = {We report on our progress to develop and optimize electron sources for practical applications. A simple fabrication process is introduced based on a wafer dicing saw and a wet chemical etch step without the need for a clean room. Due to the formation of crystal facets the samples show a homogeneous geometry throughout the array. Characterization techniques are developed to systematically compare various arrays. A very defined measurement procedure based on current controlled IV-sweeps as well as lifetime measurements at various currents is proposed. To investigate the current distribution in the array a commercial CMOS detector is used and shows the potential for in depth analysis of the arrays. Finally, a compact hermetically sealed housing is presented enabling electron generation in atmospheric pressure environments.}, language = {en} } @article{HausladenSchelsBuchneretal., author = {Hausladen, Matthias and Schels, Andreas and Buchner, Philipp and Bartl, Mathias and Asgharzade, Ali and Edler, Simon and Wohlfartsst{\"a}tter, Dominik and Bachmann, Michael and Schreiner, Rupert}, title = {Measurement of field emission array current distributions by metal-coated CMOS image sensors}, series = {Journal of Vacuum Science \& Technology B}, volume = {42}, journal = {Journal of Vacuum Science \& Technology B}, number = {6}, publisher = {AIP Publishing}, doi = {10.1116/6.0004074}, abstract = {A CMOS image sensor is utilized to determine the time- and spatially resolved distribution of the total electron emission current of a silicon field emission array. The sensor measures electron emission without the need for phosphorus screens or scintillators as converters. However, in initial experiments, rather low field emission currents of several hundreds of nanoamperes per emitter already damaged the sensor surface, which altered the systems' signal response over the measurement time. In consequence, we coated the CMOS sensor surface with a Cu layer for surface protection. In contrast to the original insulating surface, Cu is an excellent current- and heat-conductor, which avoids lens charging by providing a conductive path for incident electrons and has an improved heat dissipation capability. Measurements using a segmented field emission cathode with four individually addressable tips demonstrate a consistent correlation between the emission current and the sensor signal of the metal-coated image sensor. Furthermore, the characterization of a field emission array showed that single tip emission currents of up to 12 μA per tip are measurable without discernible damage effects of the sensor's surface.}, language = {en} } @article{SchreinerWiedmannCoenningetal., author = {Schreiner, Rupert and Wiedmann, J. and Coenning, W. and Porsche, J. and Gentner, Jean-Louis and Berroth, Manfred and Scholz, Ferdinand and Schweizer, H.}, title = {Fabrication approach for antiphase narrow linewidth complex coupled 1.55 μm DFB lasers}, series = {Electronics Letters}, volume = {35}, journal = {Electronics Letters}, number = {2}, publisher = {The Institution of Engineering and Technology IET}, issn = {0013-5194}, doi = {10.1049/el:19990132}, pages = {146 -- 148}, abstract = {A new method for fabricating narrow linewidth antiphase complex coupled MQW DFB lasers by periodically etching the active layer and quartemary InGaAsP overgrowth is reported. The minimum linewidth for a 375 µm long ridge waveguide laser is only 250 kHz at an optical output power of 4 mW.}, language = {en} } @article{HausladenSchelsAsgharzadeetal., author = {Hausladen, Matthias and Schels, Andreas and Asgharzade, Ali and Buchner, Philipp and Bartl, Mathias and Wohlfartsst{\"a}tter, Dominik and Edler, Simon and Bachmann, Michael and Schreiner, Rupert}, title = {Investigation of Influencing Factors on the Measurement Signal of a CMOS Image Sensor for Measuring Field Emission Currents}, series = {Sensors}, volume = {25}, journal = {Sensors}, number = {5}, publisher = {MDPI}, doi = {10.3390/s25051529}, pages = {17}, language = {en} } @misc{EilerWeberGerlesbergeretal., author = {Eiler, Julian and Weber, Stefan and Gerlesberger, Peter and Pl{\"o}chinger, Heinz and Schreiner, Rupert}, title = {Miniaturized Pirani vacuum sensor with active heat-loss compensation}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft e.V. (DPG), Regensburg, 16. - 21. M{\"a}rz 2025}, journal = {Verhandlungen der Deutschen Physikalischen Gesellschaft e.V. (DPG), Regensburg, 16. - 21. M{\"a}rz 2025}, publisher = {Deutsche Physikalische Gesellschaft e.V.}, issn = {2751-0522}, abstract = {Pirani sensors measure the thermal conductivity of the residual gas in a vacuum by creating a thermal gradient between a heated sensor element and a heat sink. The heat flux from the sensor element to the heat sink over the residual gas is a measure of the vacuum and can be determined by the electrical power applied. In addition to the heat flux over the gas, there are further energy losses from the heating structure due to radiation and parasitic heat fluxes via the suspensions of the sensor element. These losses reduce the sensitivity of the sensor. For this reason, a Micro-Pirani sensor in the shape of a microhotplate was developed that actively compensates the heat flux via the suspensions. This was achieved by placing additional heating structures on the suspensions, which interrupt the heat flow from the sensor element via the suspensions during operation. This active compensation improves the sensitivity at low pressures, enabling vacuum measurements from atmospheric pressure down to 10e-6 mbar.}, language = {en} } @phdthesis{Lindner, author = {Lindner, Matthias}, title = {Miniaturisierte dielektrische Barrierenentladungen und ihre Anwendung f{\"u}r das Anti- bzw. De-Icing von aerodynamischen Oberfl{\"a}chen}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:384-opus4-1118933}, pages = {XI, 155}, abstract = {Das grundlegende physikalische Verst{\"a}ndnis und die kontinuierliche Weiterentwicklung von dielektrischen Oberfl{\"a}chenbarrierenentladungen (SDBDs) sowie der damit erbundenen elektrischen Diagnostik, sind f{\"u}r eine Vielzahl von Niedertemperaturplasmaanwendungen von entscheidender Bedeutung. In Bezug auf die Anwendung dieser Plasmatechnologie in der Luftfahrt liegt neben der bereits umfassend erforschten aktiven Str{\"o}mungskontrolle zunehmend der Schwerpunkt auf der Vermeidung von Eisablagerungen auf aerodynamischen Komponenten. Die Bildung von Eis auf Oberfl{\"a}chen wie zum Beispiel den Tragfl{\"a}chen kann unter extremen Wetterbedingungen erhebliche Leistungsdefizite hervorrufen und zu ernsthaften Sicherheitsrisiken f{\"u}hren. In Anbetracht der signifikanten Vorteile gegen{\"u}ber traditionellen Enteisungsmethoden steht die Erforschung von SDBDs im Mittelpunkt des anwendungsorientierten Abschnitts dieser Arbeit. Vorliegende Arbeit untergliedert sich in einen grundlegenden und einen anwendungsbezogenen Teil. Darin werden sowohl die physikalischen Eigenschaften und Prozesse von SDBDs analysiert als auch ihre potenziellen Anwendungen in Bezug auf Flugsicherheit und Effizienz untersucht. Die wissenschaftliche Forschung hat in der Vergangenheit erhebliche Anstrengungen unternommen, um ein umfassendes Verst{\"a}ndnis der physikalischen Vorg{\"a}nge, die im Zusammenhang mit SDBDs stehen, zu erarbeiten. Insbesondere die pr{\"a}zise Bestimmung der r{\"a}umlichen Ausdehnung der Entladung entlang der dielektrischen Oberfl{\"a}che - die {\"u}blicherweise in direkter Proportionalit{\"a}t zur Amplitude der angelegten Spannung steht - ist hierbei eine herausfordernde Aufgabe. Diese umfangreichen Studien sind essenziell, um die Entladungseigenschaften und die grundlegenden physikalischen Prozesse zu verstehen, was erhebliche Anwendungspotenziale er{\"o}ffnet. Parallel zu diesen grundlegenden Studien hat sich auch der praktische Einsatz von SDBDs zur Verhinderung der Eisbildung auf aerodynamischen Bauteilen bedeutend weiterentwickelt. Untersuchungen legen nahe, dass L{\"o}sungen auf Basis von SDBDs im Vergleich zu konventionellen Enteisungsmethoden, wie beispielsweise chemischen Enteisungsmitteln oder thermischen Systemen, ein h{\"o}heres Effizienz- und Wirkungspotential besitzen k{\"o}nnten. Allerdings wurden bisherige Entwicklungen von SDBDs haupts{\"a}chlich auf Basis der Leiterplattentechnologie realisiert, was bestimmte Begrenzungen in Bezug auf ihre Anwendbarkeit f{\"u}r Anti-Icing- Technologie mit sich bringt. Im ersten Teil dieser Arbeit wurde die sequentielle Ausbreitung der SDBD-Entladung entlang der dielektrischen Al2O3-Oberfl{\"a}che systematisch analysiert. Die durchgef{\"u}hrten experimentellen Untersuchungen zeigten, dass die Entladungen unmittelbar nach dem Erreichen der Z{\"u}ndspannung einen fest definierten Bereich belegen, der bis zum Erreichen einer kritischen Spannungsamplitude VL stabil bleibt. Anzumerken ist auch, dass das Ausbleiben der Plasmaausbreitung innerhalb dieses Spannungsbereichs zu einer linearen Korrelation zwischen der Entladungsleistung und der angelegten Spannungsamplitude f{\"u}hrt. Diese tiefergehenden Einblicke in die Dynamik der Entladung k{\"o}nnen dazu beitragen, den Einsatz von SDBDs in diversen Anwendungsbereichen effizienter zu gestalten. Im zweiten Teil der Arbeit steht die Entwicklung und Implementierung eines innovativen Ansatzes zur Realisierung von SDBDs im Vordergrund, der auf der Nutzung von D{\"u}nnschichtsubstra-Vten und mikroelektromechanischen Systemen (MEMS) basiert. Die Verwendung dieser Technologie erlaubt einen pr{\"a}ziseren Design- und Fertigungsprozess von Elektrodenstrukturen, was sich positiv auf die Effizienz der Enteisung auswirken kann. Zur Beurteilung des Anti-Icing-Potenzials der entwickelten MEMS-SDBDs wurde ein direkter Vergleich mit konventionellen PCB-SDBDs durchgef{\"u}hrt. Die Ergebnisse legen nahe, dass die 35 μm dicken Elektroden der PCB-SDBDs eine Oberfl{\"a}chenvereisung f{\"o}rdern, die vorrangig durch die Elektrodenkanten induziert wird. Im Gegensatz dazu wurde dieser Effekt bei den deutlich d{\"u}nneren, lediglich 0.3 μm dicken, mittels MEMS gefertigten Elektroden nicht festgestellt. Diese Beobachtungen deuten darauf hin, dass SDBDs, die mit MEMS-Technologien gefertigt wurden, einen signifikanten Vorteil in Anti-Icing-Anwendungen aufweisen k{\"o}nnten und stellen somit einen wesentlichen Fortschritt in der Forschung und Anwendung von SDBDs dar. Die in dieser Arbeit vorgelegten Forschungsergebnisse und innovativen Methoden liefern zahlreiche neue Erkenntnisse, die das Potential besitzen, sowohl das Verst{\"a}ndnis als auch die Anwendung von SDBDs wesentlich zu erweitern. So best{\"a}tigen die Langzeitbelichtungsaufnahmen das neu entdeckte Ph{\"a}nomen einer sequenziellen Ausbreitung des Entladungsplasmas, das bei SDBDs mit dickeren Dielektrika st{\"a}rker ausgepr{\"a}gt ist. Eine neu entwickelte Methodik erm{\"o}glicht die Anwendung der Ladungs-Spannungs-Charakteristik von SDBDs, um essenzielle Parameter f{\"u}r ein vereinfachtes Ersatzschaltbild abzuleiten. Dar{\"u}ber hinaus wurde eine bemerkenswerte numerische {\"U}bereinstimmung zwischen der Ladungs-Spannungs-Charakteristik f{\"u}r den positiven Halbzyklus der Entladung und der aus den optischen Aufnahmen abgeleiteten spannungsabh{\"a}ngigen Reaktorkapazit{\"a}t festgestellt. Diese Erkenntnisse {\"o}ffnen neueWege f{\"u}r die Optimierung und Anwendung von SDBDs in verschiedenen technischen Bereichen. Weiterhin identifizierte die durchgef{\"u}hrte Erosionsstudie Titan als optimal geeignetes Material f{\"u}r MEMS-Elektroden aufgrund seiner hohen Korrosionsbest{\"a}ndigkeit und ausgezeichneten elektrischen Leitf{\"a}higkeit. Es wurden auch Potentiale zur Optimierung von MEMS-SDBDs durch die Auswahl geeigneter dielektrischer Materialien und geeigneter SDBD-Geometrien aufgezeigt. Eine solche Optimierung k{\"o}nnte die Enteisungseffizienz weiter verbessern, indem beispielsweise die dielektrischen Eigenschaften an die spezifischen Anwendungsanforderungen angepasst werden. Innovative Designkonzepte, wie eine gezielte Anordnung der Elektroden oder die Integration von Sensoren zur {\"U}berwachung des Enteisungsprozesses, k{\"o}nnten ebenfalls zur Leistungsf{\"a}higkeit und Zuverl{\"a}ssigkeit von MEMS-SDBDs beitragen. Ein weiterer bedeutender Aspekt ist die Anwendung von Piezotransformatoren zur Generierung der ben{\"o}tigten Hochspannung f{\"u}r SDBD-Systeme. Dieser innovative Ansatz k{\"o}nnte die Effizienz des auf SDBD-Technologie basierenden Enteisungsverfahrens optimieren und somit zur Verbesserung der Leistungsf{\"a}higkeit und Sicherheit von Flugzeugen unter extremen Wetterbedingungen beitragen. Das Forschungsfeld bietet viel Raum f{\"u}r zuk{\"u}nftige Studien, was die Bedeutung und Zukunftsrelevanz der in dieser Arbeit gewonnenen Ergebnisse hervorhebt.}, subject = {Kaltes Plasma}, language = {de} } @phdthesis{Jonker2023, author = {Jonker, Dirk}, title = {Advanced nanofabrication techniques for electron emission devices}, isbn = {978-90-365-5632-3}, doi = {10.3990/1.9789036556323}, pages = {362}, year = {2023}, abstract = {The goal of this thesis is to develop an electron injection source based on a cold field emission cathode that ultimately functions as an alternative electron source used during the Birch reduction process. The experimental configuration to conduct an alternative Birch reduction involves the combination of various physical domains, including solid-state physics, physics of interfaces, electrochemistry, and fluid dynamics. The body of this thesis discusses the fabrication and characterization of a silicon nanocone array. It also presents a self-aligned method to incorporate an electronic gate structure that may function as an extractor grid. The emission behavior and transport properties of the silicon nanocones are assessed by scanning tunneling microscopy by performing measurements on flat silicon and silicon nanocone surfaces containing different dopant types and doping concentrations. Furthermore, additional experimental work is conducted to replace a thermally grown silicon dioxide layer with platinum silicide and characterize the electrical properties by means of scanning tunneling microscopy. Lastly, the thesis discusses the fabrication of two plasmonic structures and evaluates the plasmonic modes, surface enhancement, and Raman activity.}, language = {en} } @article{BuchnerHausladenBartletal., author = {Buchner, Philipp and Hausladen, Matthias and Bartl, Mathias and Bachmann, Michael and Schreiner, Rupert}, title = {High current field emission from Si nanowires on pillar structures}, series = {Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics}, volume = {42}, journal = {Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics}, number = {2}, publisher = {AIP}, issn = {2166-2754}, doi = {10.1116/6.0003384}, abstract = {We investigate the influence of the geometry and doping level on the performance of n-type silicon nanowire field emitters on silicon pillar structures. Therefore, multiple cathodes with 50 by 50 pillar arrays (diameter: 5 μm, height: 30 μm, spacing: 50 μm) were fabricated and measured in diode configuration. In the first experiment, we compared two geometry types using the same material. Geometry 1 is black silicon, which is a highly dense surface covering a forest of tightly spaced silicon needles resulting from self-masking during a plasma etching process of single crystal silicon. Geometry 2 are silicon nanowires, which are individual spaced-out nanowires in a crownlike shape resulting from a plasma etching process of single crystal silicon. In the second experiment, we compared two different silicon doping levels [n-type (P), 1-10 and <0.005 Ω cm] for the same geometry. The best performance was achieved with lower doped silicon nanowire samples, emitting 2 mA at an extraction voltage of 1 kV. The geometry/material combination with the best performance was used to assemble an integrated electron source. These electron sources were measured in a triode configuration and reached onset voltages of about 125 V and emission currents of 2.5 mA at extraction voltages of 400 V, while achieving electron transmission rates as high as 85.0\%.}, language = {en} }