@inproceedings{SchubertHoefflingerZingg, author = {Schubert, Martin J. W. and H{\"o}fflinger, Bernd and Zingg, Ren{\´e} P.}, title = {A New Analytical Charge Model for the Dual-Gate-Controlled Thin-Film SOI MOSFET}, series = {Superlattices and Microstructures}, volume = {7}, booktitle = {Superlattices and Microstructures}, number = {4}, publisher = {Elsevier}, doi = {10.1016/0749-6036(90)90218-V}, pages = {323 -- 326}, abstract = {An analytical model for dual-gate-controlled SOI MOSFETs is presented, assuming uniformly doped p-silicon films. It is restricted to electron inversion layers and depletion regions, neglecting hole densities. It allows to account for the spatial description of electronic quantities in the silicon film. Due to the non-linearities of the semiconductor equations the model parameters must be extracted iteratively. Some applications are presented to demonstrate the usefulness of the model.}, language = {en} } @article{SchubertHoefflingerSchroederetal., author = {Schubert, Martin J. W. and H{\"o}fflinger, Bernd and Schr{\"o}der, D. and Zingg, Ren{\´e} P.}, title = {1D Modeling of SOI MOSFETs Using Distinct Quasi-Fermi Potentials}, series = {Microelectronic Engineering}, volume = {15}, journal = {Microelectronic Engineering}, number = {1-4}, doi = {10.1016/0167-9317(91)90221-X}, pages = {237 -- 240}, abstract = {Distinct electron and hole quasi-Fermi potentials, {\o}f,n and {\o}f,p, are included into a one-dimensional SOI MOSFET model that accounts for finite inversion and depletion layer thicknesses. The inclusion of {\o}f,n, {\o}f,p in the nonlinear analytical model is demonstrated to describe phenomena like kink effect and the multistable-charge-controlled-memory effect (MCCM) in SOI MOSFETs. The calculation of {\o}f,p(t) depends on the device history and generation/recombination rates.}, language = {en} } @article{SchubertHoefflingerZingg, author = {Schubert, Martin J. W. and H{\"o}fflinger, Bernd and Zingg, Ren{\´e} P.}, title = {An Analytical Model for Strongly Inverted and Accumulated Silicon Films}, series = {Solid-State Electronics}, volume = {33}, journal = {Solid-State Electronics}, number = {12}, publisher = {Elsevier}, doi = {10.1016/0038-1101(90)90136-3}, pages = {1553 -- 1567}, abstract = {An analytical model for the spatial distribution of potential, electric field and carrier densities is presented, assuming uniform doping density and constant quasi-Fermi potentials in the direction of modeling. Starting from the current relations a differential equation respecting two-dimensional effects is developed and solved approximately by decomposition in three regions with different preconditions: (a) flatband region, (b) constant spacecharge density and (c) strong inversion or accumulation. Inaccuracies arise mainly from violated preconditions at the interfaces between the different regions. Two-dimensional effects are respected in the analytical model of (b) only but they influence region (c) by means of boundary conditions at the interface of (b) and (c). The investigations of this paper are focused to region (c). This part of our model is identical to the model of Hauser and Littlejohn[1]. They integrated a simplified form of the semiconductor-Poisson equation twice but were restricted to one-dimensional applications and thermal equilibrium. Our derivation allows for large electric fields and current densities perpendicular to the direction of modeling. From analytical considerations confirmed by numerical experiments we suggest preference to the gradual channel condition, with x and y defined according to Fig. 1. This definition allows the potentials to vary significantly with respect to y. We found that this holds for the quasi-Fermi potentials also. Furthermore an empirical model for the maximum width of strong-inversion layers in uniformly doped silicon films is presented in eqn (46).}, language = {en} } @article{SchubertHoefflingerZingg, author = {Schubert, Martin J. W. and H{\"o}fflinger, Bernd and Zingg, Ren{\´e} P.}, title = {A One-Dimensional Analytical Model for the Dual-Gate-Controlled Thin-Film SOI MOSFET}, series = {IEEE Electron Device Letters}, volume = {12}, journal = {IEEE Electron Device Letters}, number = {9}, doi = {10.1109/55.116927}, pages = {489 -- 491}, abstract = {A one-dimensional analytical model for dual-gate-controlled SOI MOSFETs is presented and applied to a stacked p-channel MOSFET fabricated by epitaxial lateral overgrowth (ELO). The authors found and modeled a nonlinear dependence of front-gate threshold voltage on back-gate voltage if threshold is defined by a constant current instead of a constant silicon-surface potential. It is demonstrated by comparison of subthreshold slopes that surface potentials are not pinned to the onset of strong inversion or accumulation. Accurate one-dimensional modeling is a necessity for device characterization and a precondition for general SOI models for circuit simulation.< >}, language = {en} }