@inproceedings{KnodlHankeSaravananetal., author = {Knodl, Thomas and Hanke, Christian and Saravanan, Brem Kumar and Peschke, Martin and Schreiner, Rupert and Stegmuller, Bernhard}, title = {Integrated 1.3-μm InGaAlAs-InP laser-modulator with double-stack MQW layer structure}, series = {Proceedings Volume 5451, Integrated Optics and Photonic Integrated Circuits}, booktitle = {Proceedings Volume 5451, Integrated Optics and Photonic Integrated Circuits}, editor = {Righini, Giancarlo C. and Honkanen, Seppo}, publisher = {SPIE}, doi = {10.1117/12.544610}, pages = {1}, abstract = {We present first experimental results of the successful transfer of our monolithic integrated double-stack multi quantum well laser-modulator approach from the traditional InGaAsP/InP to the more promising InGaAlAs/InP material system. In continuous wave operation at room temperature, the devices achieved threshold currents of <21 mA, fiber coupled optical power levels up to 570 μW and static extinction ratios in the range of 15 dB/V. The measured small-signal modulation bandwidth of about 10 GHz is capacitance limited due to a conservative device layout.}, language = {en} }