@article{SchreinerKoerblGraebeldingeretal., author = {Schreiner, Rupert and K{\"o}rbl, M. and Gr{\"a}beldinger, H. and Gentner, Jean-Louis and Schweizer, H.}, title = {Laterally gain-coupled 1.57 [micro sign]m DFB lasers with chromium surface grating and self-aligned Ti/Pt/Au ohmic contact}, series = {Electronics Letters}, volume = {36}, journal = {Electronics Letters}, number = {7}, publisher = {The Institution of Engineering and Technology, IET}, issn = {0013-5194}, doi = {10.1049/el:20000500}, pages = {636 -- 637}, abstract = {A simple method for fabricating gain coupled DFB lasers with lateral surface chromium Bragg gratings and self-aligned low capacitance ohmic contacts is reported. These InGaAsP/InP lasers show monomode emission with a sidemode suppression ratio of 40 dB. For 243 µm long devices a continuous wave threshold current of 17 mA was measured at room temperature.}, language = {en} } @inproceedings{SchreinerGrabeldingerWiedmannetal., author = {Schreiner, Rupert and Grabeldinger, H. and Wiedmann, J. and Wunstel, K. and Porsche, J. and Scholz, Ferdinand and Schweizer, H.}, title = {Complex coupled 1.55 mu m tunable super-grating DFB lasers and photonic filters}, series = {Compound semiconductors 1999 : proceedings of the Twenty-Sixth International Symposium on Compound Semiconductors held in Berlin, Germany, 22 - 26 August 1999}, booktitle = {Compound semiconductors 1999 : proceedings of the Twenty-Sixth International Symposium on Compound Semiconductors held in Berlin, Germany, 22 - 26 August 1999}, publisher = {Inst. of Physics Publ.}, address = {Bristol [u.a.]}, isbn = {0-7503-0704-8}, abstract = {We report on the investigation and realization of photonic filters based on the combination of fractional compositions of a few basic grating periods. Using a minimum set of two basic periods Lambda(1) and Lambda(2) we demonstrate comb-like few mode photonic band gap structures with arbitrary numbers of bands and frequency spacing between the bands. Optically integrated filters of different comb periods result in switchable wavelength filters for channel selection in WDM applications.}, language = {en} } @inproceedings{SchreinerMulotGauggeletal., author = {Schreiner, Rupert and Mulot, M. and Gauggel, H. P. and Schweizer, H. and Laue, C. K. and Wallenstein, R.}, title = {Dynamic and spectral properties of red DFB lasers}, series = {Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Technical Digest (IEEE Cat. No.01CH37170) ; Baltimore, May 6 - 11, 2001 (Trends in optics and photonics series ; 56)}, booktitle = {Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Technical Digest (IEEE Cat. No.01CH37170) ; Baltimore, May 6 - 11, 2001 (Trends in optics and photonics series ; 56)}, publisher = {IEEE}, isbn = {1-55752-662-1}, doi = {10.1109/CLEO.2001.947498}, pages = {81 -- 82}, abstract = {Summary form only given. Narrow linewidth GaInP/AlGaInP DFB lasers are promising light sources for spectroscopy, for optical data storage systems and for plastic optical fiber WDM applications. However, little is known about the dynamic behavior of red DFB lasers. In this paper, we report on the dynamic and spectral properties of those devices. The lasers were first characterized under cw operation at 25/spl deg/C. Threshold currents are /spl sim/14 mA (475 /spl mu/m length) and /spl sim/18 mA (900 /spl mu/m length). The lasers show stable single mode emission at 680 nm with a SMSR better than -25 dB. The spectral linewidth of the 900 /spl mu/m long devices was measured by using a scanning-Fabry-Perot interferometer.}, language = {en} } @article{SchmidtDenkerDashielletal., author = {Schmidt, Oliver G. and Denker, Ullrich and Dashiell, Michael W. and Jin-Phillipp, Neng Yun and Eberl, Karl and Schreiner, Rupert and Gr{\"a}beldinger, Hedwig and Schweizer, Heinz C. and Christiansen, Silke H. and Ernst, Frank}, title = {Laterally aligned Ge/Si islands: a new concept for faster field-effect transistors}, series = {Materials Science and Engineering B}, volume = {89}, journal = {Materials Science and Engineering B}, number = {1-3}, publisher = {Elsevier}, address = {New York, NY}, issn = {1873-4944}, doi = {10.1016/S0921-5107(01)00810-8}, pages = {101 -- 105}, abstract = {Self-assembled and coherently strained Ge dots were grown on a Si/SiGe superlattice, which was deposited on a flat Si(001) substrate surface patterned with a regular array of straight trenches. The superlattice translates the surface modulation of the substrate into a strain-field modulation, which causes the Ge dots on its surface to form along straight lines above the buried trenches. This approach provides self-assembled Ge dots with excellent lateral periodicity, which might be useful for fabricating dot-based field-effect-transistors (DotFETs). Here, we propose the concept of a modulation-doped p-channel DotFET (p-MOD-DotFET). The p-MOD-DotFET relies on embedded Ge-rich nanostructures, which provide p-channels through the Ge-rich dots. A high Ge concentration in the dots is desirable in order to exploit the high hole mobility of Ge-rich material. We show that the commonly observed Si-Ge intermixing during Si capping of Ge dots can be suppressed by overgrowing the islands at low temperature.}, language = {en} } @article{SchreinerWiedmannCoenningetal., author = {Schreiner, Rupert and Wiedmann, J. and Coenning, W. and Porsche, J. and Gentner, Jean-Louis and Berroth, Manfred and Scholz, Ferdinand and Schweizer, H.}, title = {Fabrication approach for antiphase narrow linewidth complex coupled 1.55 μm DFB lasers}, series = {Electronics Letters}, volume = {35}, journal = {Electronics Letters}, number = {2}, publisher = {The Institution of Engineering and Technology IET}, issn = {0013-5194}, doi = {10.1049/el:19990132}, pages = {146 -- 148}, abstract = {A new method for fabricating narrow linewidth antiphase complex coupled MQW DFB lasers by periodically etching the active layer and quartemary InGaAsP overgrowth is reported. The minimum linewidth for a 375 µm long ridge waveguide laser is only 250 kHz at an optical output power of 4 mW.}, language = {en} }