@inproceedings{Schubert, author = {Schubert, Martin J. W.}, title = {VHDL Based Simulation of a Sigma-Delta A/D Converter}, series = {EEE/ACM International Workshop on Behavioral Modeling and Simulation (BMAS2000), October 19-20 2000, Orlando, Florida, USA, prodeedings}, booktitle = {EEE/ACM International Workshop on Behavioral Modeling and Simulation (BMAS2000), October 19-20 2000, Orlando, Florida, USA, prodeedings}, doi = {10.1109/BMAS.2000.888367}, abstract = {The VHDL based mixed-signal event-driven (MixED) simulation method is employed to simulate a sigma-delta modulator for A/D conversion. Results are verified by experimental data and comparison to PSpice-AD simulations.}, language = {en} } @inproceedings{LeeSchubertHo, author = {Lee, Wai-Kong and Schubert, Martin J. W. and Ho, Stanley Jian-Qin}, title = {Multi-source energy harvesting and storage for floating wireless-sensor-network nodes}, series = {2016 IEEE Industrial Electronics and Applications Conference (IEACon 2016), 20.-22. Nov. 2016, Kota Kinabalu, Malaysia}, booktitle = {2016 IEEE Industrial Electronics and Applications Conference (IEACon 2016), 20.-22. Nov. 2016, Kota Kinabalu, Malaysia}, isbn = {9781509009268}, language = {en} } @misc{SchubertSeign, author = {Schubert, Martin J. W. and Seign, Stefan}, title = {Arrangement for Measuring Capacitance}, language = {en} } @article{SchubertHoefflingerSchroederetal., author = {Schubert, Martin J. W. and H{\"o}fflinger, Bernd and Schr{\"o}der, D. and Zingg, Ren{\´e} P.}, title = {1D Modeling of SOI MOSFETs Using Distinct Quasi-Fermi Potentials}, series = {Microelectronic Engineering}, volume = {15}, journal = {Microelectronic Engineering}, number = {1-4}, doi = {10.1016/0167-9317(91)90221-X}, pages = {237 -- 240}, abstract = {Distinct electron and hole quasi-Fermi potentials, {\o}f,n and {\o}f,p, are included into a one-dimensional SOI MOSFET model that accounts for finite inversion and depletion layer thicknesses. The inclusion of {\o}f,n, {\o}f,p in the nonlinear analytical model is demonstrated to describe phenomena like kink effect and the multistable-charge-controlled-memory effect (MCCM) in SOI MOSFETs. The calculation of {\o}f,p(t) depends on the device history and generation/recombination rates.}, language = {en} } @inproceedings{SchubertLeeOoi, author = {Schubert, Martin J. W. and Lee, Wai-Kong and Ooi, Boon Yaik}, title = {Quantization and Sampling Effects in Fast Digitally Controlled Switch-Mode DC/DC Buck Converters}, series = {2021 IEEE Industrial Electronics and Applications Conference (IEACon): 22.11.2021 - 23.11.2021, Penang, Malaysia}, booktitle = {2021 IEEE Industrial Electronics and Applications Conference (IEACon): 22.11.2021 - 23.11.2021, Penang, Malaysia}, publisher = {IEEE}, isbn = {978-1-7281-9253-6}, doi = {10.1109/IEACon51066.2021.9654272}, pages = {56 -- 61}, abstract = {Software-defined control of DC/DC switch mode power converters features unequaled flexibility compared to analog control. For fast switching converters as recently used for low power applications, digital control may cause steady-state oscillations known as limit cycles. This effect based on a quantized duty cycle is compared to other aberrations such as output ripple voltage, which is inherent to any pulse-width modulator. A distinction is made between DC and AC errors. The latter are divided into synchronous and asynchronous output voltage disturbances. Synchronous AC errors are composed of the switching frequency and its harmonics.}, language = {en} }