@inproceedings{WickLindnerZimmeretal., author = {Wick, Michael and Lindner, Gerhard and Zimmer, Katja and Schreiner, Rupert and Fuhrmann, Thomas and Seebauer, Gudrun and Xu, Boqing and Zheng, Jihong and Wang, Ning}, title = {German-Chinese cooperative Bachelor in engineering physics/optoelectronics}, series = {14th Conference on Education and Training in Optics and Photonics: ETOP 2017; Hangzhou, China 29.05.2017 - 31.05.2017}, booktitle = {14th Conference on Education and Training in Optics and Photonics: ETOP 2017; Hangzhou, China 29.05.2017 - 31.05.2017}, editor = {Liu, Xu and Zhang, Xi-Cheng}, publisher = {SPIE}, isbn = {9781510613812}, doi = {10.1117/12.2269943}, abstract = {The University of Shanghai for Science and Technology (USST), the Coburg University of Applied Sciences and Arts (CUASA) and the OTH Regensburg, University of Applied Sciences (OTHR) established an English taught international cooperative bachelor program in the area of Engineering Physics/Optoelectronics. Students from China study their first four semesters at USST. They continue their studies in Germany for the last three semesters, including an internship and a bachelor thesis, graduating with a Chinese and a German bachelor degree. Students from Germany study their third and fourth semester at USST to gain international experience. While the first cohort of Chinese students is currently in Germany, the second cohort of German students is in Shanghai. Up to now the feedback regarding this study program is completely positive, thus it is planned to develop it further.}, language = {en} } @inproceedings{KnappLangerPrommesbergeretal., author = {Knapp, Wolfram and Langer, Christoph and Prommesberger, Christian and Lindner, Matthias and Schreiner, Rupert}, title = {Investigations of the transition from field electron emission to stable plasma discharge in a micro electron source at vacuum pressure}, series = {2017 30th International Vacuum Nanoelectronics Conference (IVNC), 10-14 July 2017, Regensburg, Germany}, booktitle = {2017 30th International Vacuum Nanoelectronics Conference (IVNC), 10-14 July 2017, Regensburg, Germany}, publisher = {IEEE}, doi = {10.1109/IVNC.2017.8051594}, pages = {166 -- 167}, abstract = {We report on the transition from field electron emission to plasma discharges. During an experiment with a miniaturized field emission electron source a plasma discharge accompanied by a luminous effect was observed. A novel graphical evaluation method was used to interpret and to compare the observed phenomenon.}, language = {en} } @article{SchreinerSchweizer, author = {Schreiner, Rupert and Schweizer, Heinz C.}, title = {High-frequency operation of 1.57-μm laterally coupled distributed feedback lasers with self-aligned ohmic contacts and nickel surface gratings}, series = {IEEE Journal of Selected Topics in Quantum Electronics}, volume = {9}, journal = {IEEE Journal of Selected Topics in Quantum Electronics}, number = {5}, publisher = {IEEE}, doi = {10.1109/JSTQE.2003.819469}, pages = {1179 -- 1182}, abstract = {Laterally coupled distributed feedback lasers with self-aligned ohmic contacts show the advantage of a considerably simplified fabrication process. These lasers exhibit superior spectral properties with full benefit from the gain coupling mechanism. Side-mode suppression ratios up to 55- and 3-dB bandwidths beyond 15 GHz were obtained for these devices.}, language = {en} } @article{DamsSchreiner, author = {Dams, Florian and Schreiner, Rupert}, title = {Influencing factors on the sensitivity of MEMS-based thermal conductivity vacuum gauges}, series = {Journal of vacuum science \& technology A}, volume = {32}, journal = {Journal of vacuum science \& technology A}, number = {3}, publisher = {AVS}, doi = {10.1116/1.4867486}, abstract = {The measurement range of thermal conductivity vacuum gauges is mainly influenced by the sensitivity of the sensing element to variations in pressure. An enhanced definition of sensitivity shows its theoretical dependence on the geometric measures of the sensor element at the whole pressure range. This value gives the possibility of direct comparison between different types of sensor structures without the influence of the operating conditions. To study the influencing factors, sensor chips with heated surfaces in the order of some tens of mm 2 were realized by microelectromechanical systems-based fabrication techniques. By a silicon-glass hybrid process two cold planes were formed in a distance of 150 mu m above and below the heated element. The thermal conductance of devices with different geometric measures was determined in constant temperature operating mode by usage of embedded measurement equipment. In this configuration the sensor signals were sensitive to pressure in a region from 10(-5) mbar. The sensitivity was extracted by a fit of the theoretical model to the measurement data and showed the predicted dependencies on the geometric measures. (C) 2014 American Vacuum Society.}, language = {en} } @article{DamsNavitskiPrommesbergeretal., author = {Dams, Florian and Navitski, Aliaksandr and Prommesberger, Christian and Serbun, Pavel and Langer, Christoph and M{\"u}ller, G{\"u}nter and Schreiner, Rupert}, title = {Homogeneous Field Emission Cathodes With Precisely Adjustable Geometry Fabricated by Silicon Technology}, series = {IEEE Transactions on Electron Devices}, volume = {59}, journal = {IEEE Transactions on Electron Devices}, number = {10}, publisher = {IEEE}, issn = {0018-9383}, doi = {10.1109/TED.2012.2206598}, pages = {2832 -- 2837}, abstract = {Silicon-based cathodes with precisely aligned field emitter arrays of sharp tips applicable for miniaturized electron sources were successfully fabricated and characterized. This was made possible by an improved fabrication process using wet thermal oxidation, wet etching, and reactive-ion etching steps with adjustable anisotropy. As substrate materials, both p-doped silicon and n-doped silicon were used. The cathode chips contain about 3 × 10 5 Si tips/cm 2 in a triangular array with tip heights of 2.5 μm, tip radii of less than 30 nm, and spacing of 20 μm. Well-aligned field emission (FE) and excellent homogeneity from all tips (i.e., 100\% efficiency) and maximum stable currents of typically 0.1 μA (0.6 μA) for p (n)-type Si were reproducibly achieved. The current-voltage characteristics of the p-Si tips exhibit the expected saturation at around 10 nA with around ten times better current stability, whereas the n-Si tips show the usual Fowler-Nordheim behavior. Additional coating of the Si tips with 5-nm Cr and 10-nm Au layers resulted in improved stability and at least five times higher average FE current limits (about 3 μA) at about 30\% higher operation voltage.}, language = {en} } @article{TanYeapChowetal., author = {Tan, Pi Lin and Yeap, Guan Yeow and Chow, Wen Shyang and Schreiner, Rupert and Cheong, Kuan Yew}, title = {Effect of Thickness of Porphyrin on Electrical Properties of Organic Devices}, series = {Advanced Materials Research (AMR)}, volume = {1024}, journal = {Advanced Materials Research (AMR)}, publisher = {Trans Tech Publications Ltd.}, address = {Baech}, issn = {1662-8985}, doi = {10.4028/www.scientific.net/AMR.1024.381}, pages = {381 -- 384}, abstract = {The study on electrical properties for both 2,3,7,8,12,13,17,18-octaethyl-21,23H-porphine Cu (II) (Cu-porphyrin) and 2,3,7,8,12,13,17,18-octaethyl-21,23H-porphine (porphyrin) thin film, which were fabricated using spin coating method was conducted. Porphyrins were diluted with chloroform of various concentrations (0.05 mg/ml, 0.1 mg/ml, 0.5 mg/ml, 2.0 mg/ml and 3.0 mg/ml). The solution was spin coated on top of glass substrates. A layer of aluminum was evaporated on top of the organic thin film through thermal evaporation and shadow mask was placed on top of the organic thin film where two electrodes with a gap of 50 μm were formed. Surface morphology of the organic thin film was observed by scanning electron microscope (SEM) and profilometer. Different concentrations of organic solutions greatly affected the molecular packing and arrangement order of the organic thin film and thickness of the organic layer and eventually affected electrical properties of the devices.}, language = {en} } @article{LangerBerndtSchreiner, author = {Langer, Christoph and Berndt, Dominik and Schreiner, Rupert}, title = {Sensitivity of thermal conductivity vacuum gauges for constant current and constant temperature operation}, series = {Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics}, volume = {40}, journal = {Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics}, number = {5}, publisher = {AIP Publishing}, doi = {10.1116/6.0001964}, abstract = {To optimize the measurement range of thermal conductivity vacuum gauges, an expression for the sensitivity is required that takes into account all geometrical, material-specific, and operating parameters. Therefore, equations of the sensor output signal as a function of the pressure for the constant current and the constant temperature mode have been developed analytically. Based on these equations, the sensitivity of the vacuum gauge and its influencing parameters was investigated and discussed. For comparable conditions, the constant temperature operation shows a significantly higher sensitivity for high pressures, while the constant current operation shows higher sensitivity at low pressures. The sensitivity in both the constant current and the constant temperature mode depends on the ratio of the filament surface area and the parasitic thermal conductance. In addition, for the constant current operation, the sensitivity also depends on the current value and the temperature coefficient of the filament resistor. For the constant temperature operation, the sensitivity additionally depends on the distance of the filament and the reference plane. However, to extend the measurement range of a thermal conductivity vacuum gauge toward low pressures, a reduction of the parasitic thermal conductance is mandatory for both the constant current and the constant temperature mode.}, language = {en} } @inproceedings{DamsPrommesbergerSchreiner, author = {Dams, Florian and Prommesberger, Christian and Schreiner, Rupert}, title = {Fabrication process of silicon-tip-arrays for field emission applications}, series = {24th International Vacuum Nanoelectronics Conference (IVNC), 2011 : 18 - 22 July 2011, Historische Stadthalle Wuppertal, Germany}, booktitle = {24th International Vacuum Nanoelectronics Conference (IVNC), 2011 : 18 - 22 July 2011, Historische Stadthalle Wuppertal, Germany}, publisher = {IEEE}, isbn = {978-3-00-035081-8}, issn = {2380-6311}, pages = {49 -- 50}, abstract = {A micromachined process to assemble homogeneous and reproducible tip arrays for field emission applications is developed and characterized. As substrate material p- as well as n-doped silicon is used. Lateral position of the tips is defined by structuring silicon dioxide to discs in a photolithographic process. Vertical structure of the tips is defined by a combination of RIE dry etching with controlled anisotropy and thermally oxidization of silicon in order to sharpen the tips. Hence field emitter arrays (FEAs) can be assembled both as bare and coated cathodes. To assemble field emission diodes, this fabrication process allows placing a metal anode in a micrometer order distance to the tips by a self-aligning procedure. The anode is placed in an evaporation process whereupon sharpening oxide is used as isolator between anode and cathode. Electrical characterization of the cathodes showed very good homogeneity, well alignment and stability over time of emission current from all tips (i.e. 100\% efficiency).}, language = {en} } @inproceedings{SchreinerMulotWiedmannetal., author = {Schreiner, Rupert and Mulot, M. and Wiedmann, J{\"o}rg and Coenning, W. and Porsche, J. and Gentner, Jean-Louis and Berroth, Manfred and Scholz, Ferdinand and Schwizer, H.}, title = {Dynamic measurements on narrow linewidth complex coupled 1.55 μm DFB lasers with gain and index grating in antiphase}, series = {Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99), 16-20 May 1999, Davos, Switzerland}, booktitle = {Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99), 16-20 May 1999, Davos, Switzerland}, publisher = {IEEE}, address = {Piscataway}, isbn = {0-7803-5562-8}, doi = {10.1109/ICIPRM.1999.773626}, pages = {25 -- 28}, abstract = {We report on dynamic measurements on antiphase complex coupled 1.55 /spl mu/m DFB lasers. The antiphase complex coupling mechanism is realized by periodically etching the active layer and quarternary InGaAsP overgrowth. This new fabrication approach results in very narrow linewidths measured on devices with rather short resonator lengths. The minimum linewidth for a 375 /spl mu/m long ridge waveguide laser was only 250 kHz at an optical output power of 4 mW. The RC-limited 3dB-bandwidth for those devices was /spl sim/6 GHz. Using circuit model corrections, the intrinsic bandwidth limitation of those lasers was found to be 17.4 GHz.}, language = {en} } @inproceedings{SchreinerNaegeleKoerbletal., author = {Schreiner, Rupert and Naegele, Peter and Koerbl, Michael and Groening, Albert and Gentner, Jean-Louis and Schweizer, Heinz C.}, title = {Monolithically integrated tunable laterally-coupled distributed feedback lasers with self-aligned Ti/Pt/Au ohmic contacts}, series = {Proceedings Volume 4871, Semiconductor Lasers and Optical Amplifiers for Lightwave Communication SystemsSemiconductor Lasers and Optical Amplifiers for Lightwave Communication Systems}, booktitle = {Proceedings Volume 4871, Semiconductor Lasers and Optical Amplifiers for Lightwave Communication SystemsSemiconductor Lasers and Optical Amplifiers for Lightwave Communication Systems}, editor = {Mirin, Richard P. and Menoni, Carmen S.}, publisher = {SPIE}, doi = {10.1117/12.457281}, pages = {160}, abstract = {We present a new method for fabrication of tunable InGaAsP-InP single mode lasers without epitaxial overgrowth. These devices show the advantage of a considerably simplified fabrication process compared to conventional tunable laser types. The lasers comprise an active Bragg reflector integrated with an uncorrugated separately pumped gain region. To overcome the extensive and expensive overgrowth step we realized a surface grating on both sides of the ridge mesa, which provides DFB operation. By adjusting the current through the Bragg reflector, the wavelength can be tuned between 1590.8 nm and 1595.2 nm. A maximum of 11 wavelength channels with an average spacing of ~0.5 nm and a constant optical output power of ~0.5 mW are addressable.}, language = {en} }