@inproceedings{SchubertBloedelConradietal., author = {Schubert, Martin J. W. and Bl{\"o}del, J. and Conradi, P. and Lafosse, P. and Nebel, W. and Neusser, S. and Ryba, M. and Schr{\"o}der, D.}, title = {Extending EDIF for Technology Data}, series = {EDIF World Conference, 1989, San Jose, CA, USA, 11.-14. September}, booktitle = {EDIF World Conference, 1989, San Jose, CA, USA, 11.-14. September}, language = {en} } @article{SchubertHoefflingerSchroederetal., author = {Schubert, Martin J. W. and H{\"o}fflinger, Bernd and Schr{\"o}der, D. and Zingg, Ren{\´e} P.}, title = {1D Modeling of SOI MOSFETs Using Distinct Quasi-Fermi Potentials}, series = {Microelectronic Engineering}, volume = {15}, journal = {Microelectronic Engineering}, number = {1-4}, doi = {10.1016/0167-9317(91)90221-X}, pages = {237 -- 240}, abstract = {Distinct electron and hole quasi-Fermi potentials, {\o}f,n and {\o}f,p, are included into a one-dimensional SOI MOSFET model that accounts for finite inversion and depletion layer thicknesses. The inclusion of {\o}f,n, {\o}f,p in the nonlinear analytical model is demonstrated to describe phenomena like kink effect and the multistable-charge-controlled-memory effect (MCCM) in SOI MOSFETs. The calculation of {\o}f,p(t) depends on the device history and generation/recombination rates.}, language = {en} }